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Book Review Thin FilmsЦInterdiffusion and Reactions. Edited by J. M. Poate et al

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C N 2:
CN
CN
CN
CN
Linear polymers: S, Se, Te, linear metaphosphates,
polycarboranes, and the currently much discussed
polyphosphazenes and SN polymers.
3:
Chalcogenide glasses such as As2S3 and ultraphosphates.
3 4 : B o r a t e and boron phosphate glasses.
4:
Quartz glass, alkali metal silicates, borosilicate
glasses, glass ceramics, BeF,, phosphorus oxide
nitride, crystalline silicates such as ladder and layer
silicates, three-dimensional networks such as felspars and zeolites, and boron and aluminum phosphate.
>4: Titanium, zirconium and tin phosphate, SiP207.
The main emphasis of the work is on glasses.
Next comes a section on inorganic fibers, e.y. on the basis
of A1203 and Z r 0 2 ; there is no discussion of glass fibers,
but the reactions involved in the setting of cement are mentioned. There is no reference to enamels.
The author's opinions on the need to replace organic
polymers by inorganic ones-for example because of the
increasing shortage of oil--are highly debatable.
For whom is the book intended? It will certainly stimulate
the thinking ofchemists involved in research and development.
To evaluate it critically, however, the author assumes that
the reader has a very good grounding in inorganic, organic,
and polymer chemistry.
Reinhard Schliebs [NB 463 IE]
The Donor-Acceptor Approach to Molecular Interactions.
By V. Gutrnann, Plenum Press, New York 1978, xvi, 279
pp., bound, E 33.00.
Over the last ten years the author has won considerable respect with a series of papers in which he has attempted to extend the donor-acceptor model of coordination chemistry
into a unified concept for the description of all types of
molecular interactions. The present monograph contains a
detailed presentation of this approach.
The approach is described in two relatively short introductory chapters. The essential effects of a donor-acceptor interaction between two subsystems (two molecules, molecule
and solvent, erc.) on the properties of these subsystems in the
complex can be summarized in three rules concerning the
change in bond lengths (the bond-length variation rules).
The ability of the subsystems to form donor-acceptor bonds
is characterized by empirical parameters specific to the molecule (donor number, acceptor number), and these may be determined by calorimetric, kinetic, or NMR measurements.
In the next fifteen chapters this concept is applied to a
wide variety of chemical phenomena, from the formation of
simple coordination compounds between isolated molecules,
such as H,N BF3, via solvent effects to enzyme reactions. In
each case the donor and acceptor numbers of the subsystems
are related to the properties of the complex formed, such as
geometric structure, partial charges, stability, chemical behavior, reaction mechanisms, etc.
The author has succeeded in discussing a wealth of widely
scattered material from all fields of chemistry under one unified viewpoint, and has summarized a large number of different reactions in one concept. Sometimes the approach
seems too simple, and sometimes i t is also not very satisfactory to have a concept constructed purely upon empirical parameters without any attempt being made to understand the
details of a chemical bond and to discuss them. Be that as it
may, we must agree with the author when he states in the
560
foreword that the donor-acceptor model is a useful general
concept that enables a number of phenomena to be explained and predicted.
VoNter Staemrnler [NB 472 IE]
Thin Films-Interdiffusion and Reactions. Edited by J . M .
Poate et al. John Wiley & Sons, London 1978. 1st edit.,
x, 578 pp., bound, ,f 25.00.
The title does not give much indication of the book's great
relevance for current problems in semiconductor technology.
The work contains information on almost every aspect of
interfacial reactions between two solids : interdiffusion, diffusion across the grain boundaries, formation of intermetallic
phases, and-in the case of the silicides-formation of chemical compounds.
The techniques and the scope of analytical methods for
the characterization of films are described, as are the methods
of depth profile analysis, and are illustrated with examples
of successful applications. Contact between metals and semiconductors is discussed for the cases of Schottky barriers
and ohmic contacts. There is also a chapter on electron migration, i . e . on material transport in metal films. The section
on solid phase epitaxy may, at first, seem to be of less immediate
relevance, but this is not the case, because. for example, recrystallization after ion implantation falls within this field. Finally
the effects of ion implantation in metal films on the properties
of the metals are considered.
The editors have shown great skill in their choice of topics
and authors, but have not intervened to coordinate the
contents of the various sections. For example, electron
migration appears in two different places in the book.
The unifying element of this book is the relevance of the
theme for the further development of semiconductor technology. An understanding of the fundamental physical and chemical processes in the interface and in the metal film itself
will result in ideas that may help to solve important problems
in the development of new generations of semiconductor components. The book is not a textbook, nor is it a reference
book. One should read it for its wealth of information.
Konrad Eisele [NB 455 IE]
The Spectrum in Chemistry. By J . E. Crooks. Academic Press,
London 1978. 1st edit., x, 313 pp., bound, f 12.60.
Dozens of monographs, summarizing reports, handbook
articles, etc. appear every year on various individual aspects
of chemical spectroscopy. What is lacking is a monograph
or an introductory textbook that would present the chemist
with an authoritative guide to the whole range of spectroscopy
m chemistry. The present book is directed toward this requirement and meets it well.
The various subfields of spectroscopy with electromagnetic
waves are dealt with in 14 chapters. A short introduction
is followed by sections on the microwave region, NQR, IR,
VIS, UV, Raman, NMR, EPR, fluorescence and phosphorescence, circular dichroism, photoelectron spectroscopy, and
Mossbauer spectroscopy. Relevant literature references are
appended to each chapter. The use of SI units is dealt with
in an appendix. The reader can acquaint himself with the
questions raised by means of worked examples. There is a
good subject index.
The author assumes a certain knowledge of the fundamentals
of physical chemistry, as he makes clear in the introduction.
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