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Inside Cover Surface Passivation and Transfer Doping of Silicon Nanowires (Angew. Chem. Int. Ed. 522009)

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The
large surface-to-volume ratio …
… of nanomaterials could facilitate efficient doping using purely surface passivation and
adsorption. In their Communication on page 9896 ff., R. Q. Zhang, S. T. Lee, and coworkers describe surface passivation and transfer doping in silicon nanowires (SiNWs,
see picture) by surface termination with hydrogen atoms and adsorption of ammonia
molecules. The approach is an alternative to conventional volume doping to modulate
the conductivity of SiNWs or other nanomaterials.
Inside Cover
Chun-Sheng Guo, Lin-Bao Luo, Guo-Dong Yuan, Xiao-Bao Yang, RuiQin Zhang,* Wen-Jun Zhang, and Shuit-Tong Lee*
The large surface-to-volume ratio of nanomaterials could facilitate efficient doping
using purely surface passivation and adsorption. In their Communication on
page 9896 ff., R. Q. Zhang, S. T. Lee, and co-workers describe surface passivation and
transfer doping in silicon nanowires (SiNWs, see picture) by surface termination with
hydrogen atoms and adsorption of ammonia molecules. The approach is an
alternative to conventional volume doping to modulate the conductivity of SiNWs or
other nanomaterials.
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int, cover, angel, chem, 522009, passivation, transfer, nanowire, doping, silicon, surface, insider
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