On trap identification in triple-gate FinFETs and Gate-All-Around Nanowire MOSFETs using low frequency noise spectroscopy D. Boudier, B. Cretu E. Simoen, A. Veloso and N. Collaert Normandie Univ, UNICAEN, ENSICAEN, CNRS, GREYC 14000 Caen, France firstname.lastname@example.org imec Kapeldreef 75 B-3001 Leuven, Belgium Abstract—This paper brings a comparison of the traps identified in triple-gate FinFETS and Gate-All-Around (GAA) nanowire (NW) MOSFETs built with the same technological process. Traps have been identified using low frequency noise (LFN) spectroscopy, giving information on which process steps may be improved in order to build better devices. Keywords—SOI; Gate-All-Around; FinFET; nanowire; low frequency noise; noise spectroscopy I. INTRODUCTION In this work triple-gate FinFETs and Gate-All-Around (GAA) nanowire (NW) MOSFETs have been studied using low frequency noise (LFN) measurements. Considering their electrostatic performances these devices are considered as the optimal solutions to answer to the International Technology Roadmap for Semiconductors (ITRS) requirements in term of CMOS technology downscaling . The LFN spectroscopy is used as a non-destructive diagnostic tool and provides information about the traps located in the transistors . It allows to detect the process steps that can be improved in order to improve the MOSFET processing. The devices have been studied in the temperature range from 270 K to 320 K in order to identify the traps that may deteriorate the transistors noise performances while working at ambient temperature. This paper presents the methodology of LFN measurements and compares results on the identified traps of n- and p-channel FinFETs and GAA MOSFETs. II. DEVICES AND EXPERIMENTAL The studied devices are imec (Belgium) triple-gate FinFETs and GAA NW MOSFETs built for the sub 10-nm technological node. They are fabricated on a Silicon On Insulator (SOI) substrate and are made using nearly the same technological steps. In this work, a comparative study of these two types of devices is performed in term of LFN noise performances. Each transistor has 5 fingers or nanowires of about 22.5 nm height. The fingers and nanowires width is 20 nm, which gives a total gate width of WG,Fin = 325 nm and WG,GAA = 425 nm for FinFETs and GAA, respectively. The gate length is LG = 60 nm or LG = 250 nm. The gate dielectric is made of a high-k oxide (HfO2) on top of an interfacial SiO2 layer. Both layers are 1.5 nm thick, giving an equivalent oxide thickness of EOT = 1.9 nm and a surface gate oxide capacitance of Cox = 1.79·10-6 F/cm2. The gate metal is made of EWF (TiN) and W-fill metal depositions. Full devices details are available in . Low Frequency Noise spectroscopies have been performed on the devices described above. Measurements are made at wafer level using a Lakeshore TTP4 probe station and biased in linear operation regime with a drain-source voltage |VDS| = 20 mV. The temperature has been set from 270 K to 320 K with 5 K steps with the help of liquid nitrogen and a Lakeshore 331 Temperature Controller. Output noise voltage Power Spectral Densities (PSDs) Svout have been measured with a HP 3562A Dynamic Signal Analyzer and a home-made instrumentation based on a lownoise transimpedance amplifier. The input-to-output gains have been measured and consequently one can obtain the input referred gate voltage noise PSD Svg by dividing Svout by the squared system gain. Moreover the system bandwidth limitation is cancelled by using this method. The LFN spectra have been studied and compared at constant drain current ID values by adjusting the gate voltage VGS, thus identical Fermi levels are reached for all temperatures. III. LOW FREQUENCY NOISE THEORY AND METHODOLOGY A. Low frequency noise model The low frequency noise measurements are usually inputreferred to the gate noise voltage Svg power spectral density. In the low frequency range it originates mainly from the resistive parts of the transistor, i.e. the source and drain regions and the channel. The LFN is generally due to the contributions of white noise, flicker (or 1/f) noise and generation-recombination (GR) noise. The white noise originates from the thermal noise and the shot noise and is characterized by a constant level Kw in the frequency domain. The flicker noise of level Kf may be due to a carrier number fluctuations (ΔN model) , to a carrier mobility fluctuations (Δµ)  or to a contribution of both phenomena (ΔN+Δµ) . It decreases following Kf / fγ, where γ is a frequency exponent reflecting the uniformity of the gate oxide traps concentration in the gate depth. Finally the generation-recombination noise is the consequence of traps (located in the gate oxide or in the depletion region, which is 978-1-5090-2760-6/17/$31.00 ©2017 IEEE the silicon film for fully depleted devices) that randomly capture and release channel carriers. Each GR phenomenon has a corresponding Lorentzian in the frequency domain, i.e. a plateau of level Ai followed by a 1/f2 decrease from the characteristic frequency f0,i . The total gate voltage noise is the sum of these contributions as seen in (1) As seen in Fig. 1 Svg is often multiplied by f as it eases the parameters extraction. Indeed the bumps top frequency corresponds to f0,i, its extraction precision is easier on f·Svg compared to Svg and then gives a higher precision on Ai estimation. As can be observed from Fig. 2, all devices are subject to GR noise. The total noise seems to be higher in the n-channel GAA with LG = 60 nm, as expected for smaller devices. By comparing same geometry GAA and FinFETs devices, one can observe that the noise level at 1 Hz is almost the same for nchannel devices while for p–channel devices seems to be slightly higher for GAA transistors. The last frequency decade exhibits the white noise contributions in the PSD. B. Identification of silicon film traps using low frequency noise spectroscopy Once the Lorentzian contributions on the total noise have been modelled using (1) one can trace the evolution of the characteristic frequencies f0,i as a function of the gate voltage VGS at a given temperature. The characteristic frequencies of a single trap vary following an exponential law f0,i ∝exp(β·VGT). Lorentzians for which the characteristic frequency is independent on VGS (for β = 0) are located in the depletion region (i.e. Si film) [8, 9]. Lorentzians for which frequency varies with VGS with β in the range of 25-33 V-1 may be attributed to interface traps . However, due to the very thin film thickness some traps located in the Si film may present bias dependence of the Lorentzian characteristic frequency with a lower exponential factor β, in comparison to reported values for oxide traps . Nevertheless characteristics frequencies should vary with the temperature in both cases. In this work only the first case (traps located in the depletion region traps with β = 0) has been taken in account. Figure 3 presents the variation of the Lorentzians characteristic frequency with temperature (at constant ID), which is highlighted by the black arrow. The inset presents the evolution of these Lorentzians characteristic frequency with VGS (at fixed temperature). One can notice that some points seem to increase with the gate voltage (shown with red lines) while others seem to remain constant (green lines). Considering the estimated values of the exponential factor β these Lorentzians may be attributed to oxide traps and silicon film traps, respectively. Fig. 1. The measured gate voltage noise PSD Svg (in black) has been modelled (red curve) using the parameters in (1). Fig. 2. Comparison of f·Svg(f) of different devices at the same temperature and bias point (|VDS| = 20 mV and |ID| = 2µA). Fig. 3. Evolution of the Lorentzians characteristic frequency with the temperature at fixed drain current (ID = 2 µA). Inset: evolution of the Lorentzians characteristic frequency with VGS at T = 310 K. Red lines show VGS-dependant Lorentzians (traps in the gate oxide) while green lines highlight constant Lorentzians (silicon film traps). For Lorentzians that are associated to silicon film traps one can identify the nature of these traps by performing a LFN spectroscopy, i.e. studying the evolution of the characteristic time constant τi = 1 / (2πf0,i) as a function of the temperature for at constant drain current ID. The characteristic time constant of a given trap is a function of the temperature following the expression (2a) (2b) with (2a) applying to n-channel devices while (2b) applies to pchannel devices . EC, EV and ET are the conduction band minimum energy level, the valence band maximum energy level and the trap energy level, respectively. The constant q is the elementary charge, kB is the Boltzmann constant, h is the Planck constant, Mc is the number of conduction band energy minima, me* is the electron effective mass (0.19 x 9.1·10-31 kg) and mh* is the hole effective mass (0.56 x 9.1·10-31 kg). The capture cross sections σn and σp stand for n- and p-channel transistors, respectively. Fig. 4. Arrhenius diagram of an n-channel GAA NW MOSFET using the LFN spectroscopy. Three traps have been identified using (2a), their parameters ΔE and σn are given in the legend. Applying a linear regression on the Arrhenius diagram points should give access to ΔE = EC-ET (or ΔE = ET-EV) and σn (or σp), as seen in Fig. 4. On this graph three traps have been observed and their parameters have been extracted using (2a). The obtained values of ΔE and σ should be compared to data in the literature in order to identify the physical nature of the traps, their parameters having been found using other measurements techniques such as Deep Level Transient Spectroscopy (DLTS). In the case presented in Fig. 4 only the nature of one trap has been clearly identified: T12 may be related to Oxygen-Hydrogen vacancy (VOH). Finally the effective (or surface trap) density Neff can be extracted for each trap by plotting the evolution of its Lorentzians plateau level Ai as a function of the characteristic time constant τi. The expression (3) indicates that the Ai of a single trap must increase proportionally to τi. Having a straight line consequently confirms that all the points belong to the same type of trap. Then Neff can be obtained from the slope of this line, knowing the effective gate width W and length L. The volume trap density NT can also be extracted knowing that NT = Neff·B/Wd (Wd being the depletion width). However the value of the coefficient B, which was usually around 1/3 for large and planar devices, does not apply well for devices such as GAA [9, 11]. Even if the repartition of the traps appears to be a volume phenomenon, only Neff has been extracted in our work as it requires no assumption on the value of B. This is illustrated by Fig. 5 on which the characteristics Ai and τi of identified traps of Fig. 4 have been plotted. The points fit to a linear regression, which confirms all points of the same color Fig. 5. Ai vs τi characteristics of the traps identified in Fig. 4. The good linearity of the points confirms that they belong to the same trap and the slope gives access to the surface trap density Neff. originate from the same trap. From the slope the effective trap densities Neff have been extracted. C. Comparison of identified traps Several devices have been studied using LFN spectroscopy. Some Arrhenius diagrams have been grouped in Fig. 6 using the same scale in order to facilitate the comparison. On all transistors two to five silicon film traps appear in the PSDs. The identified traps are summarized in Table I. For most of the identified traps their nature have not been recognized. Nevertheless the traps denoted T12 and T42 may be attributed to VOH (Oxygen-Hydrogen vacancy) and T43 may be due to V2H (Hydrogen divacancy). The latter can be explained by unstable defects such as Frenkel pairs that recombinate or evolve to a stable state, with Frenkel pairs being produced The plots of Ai vs τi led to the estimation of the effective trap density in the range 1011-1010 cm-2. These values are in the same range as other studies on similar devices . It can be noticed that the n-channel GAA and FinFET with LG = 250 nm seem to have a higher trap density, while the p-channel FinFET appears to be less impacted. IV. CONCLUSION Several sub-10 nm multi-gate devices have been investigated using low frequency noise spectroscopy. Using the methodology described above silicon film traps located in the Si film have been identified. Some of them, such as VOH and V2H, are known while many other traps even if they appear in different investigated GAA and FinFET devices are from unknown nature. Dry etching and/or implantation damage and/or selective epitaxial growth may be the process steps that created the traps in the silicon film. Fig. 6. Comparison of Arrhenius diagram of various transistors. The complete parameters extraction is synthesized in Table I. during the implantation step. Hydrogen related traps could be due to the Hydrogen used during the selective epitaxial growth of the raised source and drain. Furthermore some traps appear in different devices, such as traps with ΔE = 0.62 eV (T03 and T22) or 0.52-0.56 eV (traps designed by * in Table I). These values of ΔE are obtained using an automatic linear fit regression. Taking into account the PSD measurement error (about 4%), the Lorentzian parameter estimation error (less than 10%) and the σn or σp variation in a range of about one decade and half, it may be suggested that these ΔE = 0.52-0.56 eV values are related to the same trap. TABLE I. SYNTHESIS OF PARAMETERS OF SILICON FILM TRAPS THAT HAVE BEEN IDENTIFED USING LOW FREQUENCY NOISE SPECTRSCOPY. Device type LG Trap nm n-GAA 60 n-GAA 250 n-FinFET 250 p-GAA 250 pFinFET 250 T01 (*) T02 (*) T03 T04 T11 T12 T13 (*) T31 (*) T21 (*) T22 T41 (*) T42 T43 T44 (*) T45 (*) a. ΔE σn or σpa Neff eV cm² cm-2 K 0.54 0.53 0.62 0.50 0.67 0.32 0.52 0.53 0.54 0.62 0.53 0.32 0.47 0.56 0.52 1.1·10-14 5.8·10-16 1.0·10-14 4.4·10-17 5.3·10-13 2.2·10-17 2.1·10-14 2.1·10-15 9.2·10-16 7.5·10-14 5.6·10-16 1.3·10-17 2.9·10-17 4.1·10-14 4.2·10-15 12·1010 7.4·1010 17·1010 11·1010 24·1010 22·1010 99·1010 17·1010 14·1010 69·1010 5.2·1010 1.1·1010 9.7·1010 3.7·1010 4.7·1010 280-320 295-320 295-320 295-315 300-320 280-305 270-315 270-310 270-300 285-310 270-315 285-295 270-315 270-315 275-320 T range σn and σp applies to n- and p-channel devices, respectively. ACKNOWLEDGMENT The devices studied in this work have been processed in the framework of imec’s Core Partners Logic Program. REFERENCES  International Technology Roadmpa for Semiconductors. http://www.itrs.net  V. Grassi, C. Colombo and D. Camin, “Low frequency noise versus temperature spectroscopy of recently designed Ge JFETs”, IEEE Trans. Electron. Devices 48, pp. 2899-2905, 2001.  A. 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