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2001
electric properties, superconductors, semiconductors
electric properties, superconductors, semiconductors
D 8000
Indium Phosphide Nanowires as Building Blocks for Nanoscale
16 - 011 Electronic and Optoelectronic Devices. — Single-crystal InP nanowires
with n- or p-type doping are prepared by laser-assisted catalytic growth using
Au as the catalyst and Te or Zn as the doping element (800 ◦ C, 10 min).
The samples are characterized by field emission SEM and TEM. The doped
nanowires function as nanocale field-effect transistors, and can be assembled
into crossed-wire p-n junctions that exhibit rectifying behavior. The p-n
junctions strongly emit light and are perhaps the smallest light-emitting diodes
that have yet been made. The electric-field directed assembly can be used
to create highly integrated device arrays from nanowire building blocks. —
(DUAN, XIANGFENG; HUANG, YU; CUI, YI; WANG, JIANFANG; LIEBER,
CHARLES M.; Nature (London, UK) 409 (2001) 6816, 66-69; Dep. Chem.
Chem. Biol., Harvard Univ., Cambridge, MA 02138, USA; EN)
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