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2004
IR and Raman spectra
D 6530
Raman Spectroscopy of γ-Si3N4 and γ-Ge3N4 Nitride Spinel Phases Formed at High
and High Temperature: Evidence for Defect Formation in Nitride
44- 010 Pressure
Spinels. — The Raman spectra of γ-Si 3N4 and γ-Ge 3N4 exhibit strong changes as function of the synthesis temperature at high pressure. Additional Raman features appear at
high temperature which are assigned to the presence of defects, most likely N3- vacancies, within the nitride spinels. The intensity of the "defect" peaks varies systematically
with the temperature and pressure of synthesis. — (SOIGNARD, E.; MCMILLAN*,
P. F.; Chem. Mater. 16 (2004) 18, 3533-3542; Christopher Ingold Lab., Dep. Chem.,
Univ. Coll., London WC1H 0AJ, UK; Eng.) — Schramke
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