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2004
Technology of materials
V 1500
Ultrahigh-Quality Silicon Carbide Single Crystals. — Ultrahigh-quality SiC single
are grown by repeated growth perpendicular to the c-axis (a-face growth). This
44- 243 crystals
growth method reduces the number of dislocations in SiC single crystals by two to three
orders of magnitude, rendering them virtually dislocation-free. These substrates will
promote the development of high-power SiC devices and reduce energy losses of the
resulting electrical systems. — (NAKAMURA, D.; GUNJISHIMA, I.;
YAMAGUCHI, S.; ITO, T.; OKAMOTO, A.; KONDO, H.; ONDA, S.; TAKATORI,
K.; Nature (London, UK) 430 (2004) 7003, 1009-1012; Toyota Cent. Res. Dev. Lab.,
Nagakute, Aichi 480-11, Japan; Eng.) — W. Pewestorf
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