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2004
Nanotechnology
V 1505
Growth of Single-Crystalline Cubic GaN Nanotubes with Rectangular Cross-Sections. — The title nanotubes are synthesized in a vertical high-frequency induction fur45- 246 nace
from Ga2O3 powder and NH3 (1600 °C, 1.5 h). The samples are characterized by
powder XRD, SEM, TEM, and cathodoluminescence spectroscopy. Most of the tubes
have thicknesses of approximately 20—50 nm and typical lengths of several micrometers. The rectangular cross-section dimensions are in the range 50—150 nm. The tube
cores may be further filled with different semiconducting materials of various bandgaps, leading to interesting electrical and optical nanodevices. — (HU*, J.; BANDO,
Y.; ZHAN, J.; XU, F.; SEKIGUCHI, T.; GOLBERG, D.; Adv. Mater. (Weinheim,
Ger.) 16 (2004) 16, 1465-1468; Adv. Mater. Lab., Natl. Inst. Mater. Sci., Tsukuba,
Ibaraki 305, Japan; Eng.) — W. Pewestorf
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