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2004
Technology of materials
V 1500
Atomic Layer Deposition of ZrO2 Thin Films Using Dichlorobis[bis-(trimethylsiand Water. — The title films for gate dielectrics are deposited
50- 206 lyl)amido]zirconium
on a Si substrate by atomic layer deposition using the new Zr precursor,
ZrCl2[N(SiMe3)2]2, and H 2O in the temperature range 150—350 °C. The as-deposited
films are characterized by Rutherford backscattering spectroscopy, XPS, and SIMS.
The Si content of the samples increases from 1.1 to 5.4 at.% with increasing deposition
temperature. After rapid thermal annealing at 700—900 °C in Ar, the amorphous
as-deposited films crystallize predominantly in the cubic phase. The effective dielectric
constant of the films at 250 °C is 16.0. — (NAM, W.-H.; RHEE*, S.-W.; Chem. Vap.
Deposition 10 (2004) 4, 201-205; Dep. Chem. Eng., Pohang Univ. Sci. Technol.,
Pohang 790-784, S. Korea; Eng.) — W. Pewestorf
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