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2005
Semiconductors
D 8000
Optical Properties and Two-Dimensional Electronic Structure in Wide-Gap Layered Oxychalcogenide: La2CdO2Se 2. — The optical and electronic properties of the
04- 014 title
compound are characterized by high-resolution XRD, AFM, photoluminescence
spectroscopy, and band structure calculations using epitaxial thin films prepared by a
reactive solid phase epitaxy. The two-dimensional crystal structure seems to be a major
origin for the wide band gap (≈3.3 eV). Energy band calculations indicate that the holes
are confined in the two-dimensional [C dS e22 - ] layer, which is most likely responsible
for the large binding energy of the exciton. — (HIRAMATSU*, H.; UEDA, K.;
KAMIYA, T.; OHTA, H.; HIRANO, M.; HOSONO, H.; J. Phys. Chem. B 108 (2004)
45, 17344-17351; Hosono Transparent Electroact. Mat. Proj., Japan Sci. Technol
Corp., Kawasaki 213, Japan; Eng.) — W. Pewestorf
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