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2005
Lanthanoids
I 2800
05- 018
Syntheses, Structure, Some Band Gaps, and Electronic Structures of CsLnZnTe3
(Ln: La, Pr, Nd, Sm, Gd, Tb, Dy, Ho, Er, Tm, Y). — The new quaternary tellurides
CsLnZnTe3 (Ln: La, Pr, Nd, Sm, Gd, Tb, Dy, Ho, Er, Tm, and Y) were prepared by solid
state reactions of Ln, Zn, Te, and CsCl (1123 K, vacuum-sealed silica tubes, 96 h;
20—40% yield). These isostructural compounds crystallize in the layered KZrCuS3
structure type (orthorhombic, space group Cmcm, Z = 4; single crystal XRD). The
structure is composed of LnTe6 octahedra and ZnTe4 tetrahedra that share edges to form
2
∞ [LnZnTe 3] layers, which are separated by layers of face- and edge-sharing CsTe8 bicapped trigonal prisms. Optical band gaps of 2.13 eV for CsGdZnTe3 and 2.12 eV for
CsTbZnTe3 were deduced from single crystal optical absorption measurements. —
(YAO, J.; DENG, B.; SHERRY, L. J.; MCFARLAND, A. D.; ELLIS, D. E.; VAN
DUYNE, R. P.; IBERS*, J. A.; Inorg. Chem. 43 (2004) 24, 7735-7740; Dep. Chem.,
Northwest. Univ., Evanston, IL 60208, USA; Eng.) — Schramke
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