close

Вход

Забыли?

вход по аккаунту

?

код для вставки
2005
Osmium
I 8100
07- 024
Preparation and Characterization of OsO2. — Large single crystals of the title compound are prepared by the chemical vapor transport method from Os and NaClO3 or
NaBrO3 (evacuated silica tube, 650 °C, 48 h). The samples are characterized by XRD,
SEM, EDX, XPS, and temperature dependent resistivity measurements. The preparation of OsO2 thin films by MOCVD using Os(Cp)2 as precursor is also attempted. Difficulties encountered in the deposition of single phase OsO2 films are discussed. —
(YEN, P. C.; CHEN, R. S.; CHEN, C. C.; HUANG*, Y. S.; TIONG, K. K.; LIAO, P. C.;
J. Alloys Compd. 383 (2004) 1-2, 277-280; Dep. Electr. Eng., Natl. Taiwan Univ.,
Taipei 106, Taiwan; Eng.) — W. Pewestorf
Документ
Категория
Без категории
Просмотров
0
Размер файла
9 Кб
Теги
1/--страниц
Пожаловаться на содержимое документа