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2005
Germanium
I 4700
11- 030
Solid Solutions and Ternary Compound Formation Among Ge3N4—Si3N4 Nitride
Spinels Synthesized at High Pressure and High Temperature. — The complete
solid solution series between the two spinel end members Si3N4 and Ge3N4 is synthesized from mixtures of the low-pressure phases in a multianvil press at 23 GPa and temperatures >2000 °C. Powder XRD shows that the Si atoms preferentially fill the octahedral sites and the Ge atoms preferentially fill the tetrahedral sites. The complete solid
solution could give rise to a new family of tunable wide band gap semiconductors. —
(SOIGNARD*, E.; MCMILLAN, P. F.; LEINENWEBER, K.; Chem. Mater. 16
(2004) 25, 5344-5349; Davy-Faraday Res. Lab., R. Inst. G. B., London W1S 4BS, UK;
Eng.) — W. Pewestorf
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