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2005
Semiconductors
D 8000
Dopant Sources Choice for Formation of p-Type ZnO: Phosphorus Compound
— The problem of p-type ZnO formation is investigated using first principles
19- 009 Sources.
DFT and thermochemistry calculations. It is concluded that Zn3P2 is a better dopant
source than P2O5, especially at elevated temperatures. The use of Zn3P2 dopant and zinc
rich growth condition are recommended for the fabrication of p-type ZnO. The same
theoretical approach may be applied to the design of dopant source as well as growth
conditions for other wide-gap semiconductors. — (YU, Z. G.; GONG, H.; WU*, P.;
Chem. Mater. 17 (2005) 4, 852-855; Inst. High Perform. Comput., Singapore 118261,
Singapore; Eng.) — W. Pewestorf
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