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2005
Nanotechnology
V 1505
Comparative Structure and Optical Properties of Ga-, In-, and Sn-Doped ZnO
Synthesized via Thermal Evaporation. — High-density undoped and
21- 221 Nanowires
Ga-, In-, and Sn-doped ZnO nanowires are prepared on Si substrates coated with Au
nanoparticles via thermal evaporation at 500—1000 °C. The samples are characterized
by SEM, TEM, XPS, XRD, UV/VIS, photoluminescene, and catodoluminescence
spectroscopy. The absorption and photoluminescence of Sn-doped ZnO nanowires shift
to the lower energy region than those of In- and Ga-doped nanowires, probably due to
larger charge density of Sn. It is suggested that the charge density of the doped element
would be an important parameter in controlling the optical properties of ZnO nanowires. — (BAE, S. Y.; NA, C. W.; KANG, J. H.; PARK*, J.; J. Phys. Chem. B 109
(2005) 7, 2526-2531; Dep. Chem., Korea Univ., Jochiwon, Chungnam 339-700, S.
Korea; Eng.) — W. Pewestorf
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