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2005
Cobalt
I 7200
25- 024
Ln5Co 4Si 14 (Ln: Ho Er, Tm, Yb): Silicides Grown from Ga Flux Showing Exceptional Resistance to Chemical and Thermal Attack. — The title compounds are
synthesized from the elements using a Ga flux (850 °C, 72 h). As revealed by single
crystal XRD all the compounds crystallize in the Lu5Co4Si14 -type structure in the monoclinic space group P21/c with Z = 2. The structures consist of a dense Si/Co framework
that is assembled from [Co4Si10 ] slabs and [Si4] zigzag chains. The compounds show
remarkable resistance to both chemical attack by strong acids and bases and thermal
oxidation at temperatures exceeding 1000 °C. The thermal stability of these materials
could enable the growth of thin films via a variety of vapor deposition techniques for
surface coatings and related applications. — (SALVADOR, J. R.; MALLIAKAS, C.;
GOUR, J. R.; KANATZIDIS*, M. G.; Chem. Mater. 17 (2005) 7, 1636-1645; Dep.
Chem., Mich. State Univ., East Lansing, MI 48824, USA; Eng.) — W. Pewestorf
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