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2005
Technology of materials
V 1500
Deposition of GaSb Films from the Single-Source Precursor [t-Bu2GaSbEt2]2. —
GaSb films (sphalerite type) are grown on Si(100) by high-vacuum metal
26- 161 Crystalline
organic chemical vapor deposition at 400—550 °C using [tBu2GaSbEt2]2 (I) as a single-source precursor without any carrier gas. The thermal properties of (I) are investigated by DSC and TGA/DTA and the GaSb films are characterized in detail by means
of XRD, SEM, TEM, AFM, EDS, EELS, and Auger electron spectroscopy. The
absence of any carbon contamination within the GaSb films makes (I) very attractive
for further MOCVD studies. — (SCHULZ*, S.; FAHRENHOLZ, S.;
KUCZKOWSKI, A.; ASSENMACHER, W.; SEEMAYER, A.; HOMMES, A.;
WANDELT, K.; Chem. Mater. 17 (2005) 8, 1982-1989; Fachbereich Chem.
Chemietech., Univ.-GH Paderborn, D-33098 Paderborn, Germany; Eng.) —
Schramke
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