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2005
Semiconductors
D 8000
Structural and Electrical Characterizations of Electrodeposited p-Type Semiconductor Cu2O Films. — Thin films (2 µm thick) of the title compound are prepared by
30- 018 cathodic
deposition from an aqueous solution containing CuSO4 and lactic acid. The
samples are characterized by XRD, XPS, X-ray absorption spectroscopy, and Hall effect measurements. The films exhibit p-type conduction irrespective of the pH of the
solution and cathodic potential for the deposition. A resistivity of 104—106 Ωcm with
a carrier density of 1012 to 1014 cm -3 and a mobility of 0.4—1.8 cm2V-1s-1 is obtained
depending on the cathodic potential and pH of the solution. The title compound attracts
increasing attention as a component of solar cells and photodiodes because of the bandgap energy of 2.1 eV and high absorption coefficient. — (MIZUNO, K.; IZAKI, M.;
MURASE, K.; SHINAGAWA, T.; CHIGANE, M.; INABA, M.; TASAKA, A.;
AWAKURA, Y.; J. Electrochem. Soc. 152 (2005) 4, C179-C182; Dep. Mol. Sci.
Technol., Fac. Eng., Doshisha Univ., Tanabe, Kyoto 610-03, Japan; Eng.) —
W. Pewestorf
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