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2005
Magnetic properties
D 9000
Synthesis and Magnetic Properties of Manganese-Doped GaP Nanowires. — The
nanowires are prepared by thermal evaporation of GaP/Mn powder mixtures
34- 014 title
(1100 °C, 10 min) and characterized by SEM, TEM, Raman spectroscopy, XRD, and
magnetic measurements. Ferromagnetic hysteresis curves and temperature-dependent
magnetization indicate ferromagnetism with a Curie temperature higher than room
temperature. Individual nanowires exhibit a large negative magnetoresistance of about
-5% at 5 K. It is suggested that the Mn-doped GaP nanowires are encouraging ferromagnetic semiconductor nanowires applicable to the spintronic nanodevices. —
(HAN, D. S.; BAE, S. Y.; SEO, H. W.; KANG, Y. J.; PARK*, J.; LEE, G.; AHN, J.-P.;
KIM, S.; CHANG, J.; J. Phys. Chem. B 109 (2005) 19, 9311-9316; Dep. Chem.,
Korea Univ., Jochiwon, Chungnam 339-700, S. Korea; Eng.) — W. Pewestorf
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