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BY (11) 12538
(13) C1
(46) 2009.10.30
(19)
(12)
(51)
(2006)
G 01J 5/00
(54)
(21)
(22) 2008.03.21
(43) 2008.10.30
(71)
:
: a 20080335
(73)
-
;
"
-
;
"
"
(BY)
(72)
:
:
(BY);
(BY);
"
(BY)
(56) RU 2290614 C1, 2006.
BY 6736 C1, 2004.
RU 2151382 C1, 2000.
SU 1413443 A1, 1988.
US 5011295, 1991.
-
(BY);
(FR)
(57)
1.
,
,
BY 12538 C1 2009.10.30
,
,
,
,
-
BY 12538 C1 2009.10.30
,
,
,
ρ1,2 =
(U1λ
(U1λ
1
2
-
)
(U 2λ
, ρ 2,3 =
(U 2λ
− U1 ) Pλ S1 (λ1 )
− U1 Pλ 2 S1 (λ 2 )
1
U1 U2 U1λ1 , U1λ 2 , U 2λ 2 , U 2λ 3 -
2
3
ρ1,2, ρ2,3:
)
,
− U 2 ) Pλ S2 (λ 2 )
− U 2 Pλ 3 S2 (λ3 )
2
,
;
;
Pλ1 , Pλ 2 , Pλ 3 -
;
Sl(λl), Sl(λ2), S2(λ2), S2(λ3) ,
-
,
,
,
,
,
.
2.
,
-
,
,
,
,
,
-
,
,
,
,
,
–
,
,
.
.
λ1
ε(λ),
λ2
-
(
) [1,
. 115-118].
:
ρ1, 2 =
L2
ρ1
-
ρ2 -
ρ(λ1 ) ρ1 1 − ε1 L1 L 2
=
=
=
,
ρ(λ 2 ) ρ2 1 − ε 2 L1 L 2
, ε1 ε2 -
2
(1)
λ1
, L1 ,
λ2, L1 ,
BY 12538 C1 2009.10.30
L2
-
.
L(λ, T ) = (C1 / π)e −C 2 /( λT ) / λ5
(1)
C  1
1 − ρ1, 2
 C 
I
1 
exp − 2  + ρ1, 2 2 exp 2  −   = 1,
I1
I1
 λ1T 
 T  λ 2 λ1  
I1 =
L(λ1, T)λ51
L(λ 2 , T)λ52
, I2 =
, L(λ1,T), L(λ2,T) C1
C1
λ1, λ2
T; C1 = 1,191⋅10-16
.
-
(2)
⋅ 2⋅
-1
,
= 1,43⋅10-2
2
⋅
(2).
[1].
-
-
,
"
"
.
-
[4].
"
ε(λ) = const
"
-
,
,
.
1-5
λ
,
,
const,
ε(λ,T) = ε0(T)exp[a(T)λ]
,
-
(3)
ε(λ,T) = β0(T)(λ/λ0)b(T)
ε0(T), a(T), β0 ), b( ) -
(4)
[1-3].
,
-
10 %.
[4]
,
,
,
,
,
-
,
.
-
,
"
"
.
,
,
,
-
.
,
.
,
,
,
3
-
BY 12538 C1 2009.10.30
,
)
-
(
.
,
,
-
,
,
,
-
,
,
,
,
-
ρ1,2, ρ2,3:
U1λ1 − U1 Pλ 2 S1 (λ 2 )
U 2λ 2 − U 2 Pλ 3 S2 (λ 3 )
, ρ 2 ,3 =
,
ρ1, 2 =
U1λ 2 − U1 Pλ1 S1 (λ1 )
U 2λ 3 − U 2 Pλ 2 S2 (λ 2 )
(
(
)
)
(
(
U1 U2 U1λ1 , U1λ 2 , U 2λ 2 , U 2λ 3 -
)
)
,
;
;
λ1, λ2, λ3 S1(λ1), Sl(λ2), S2(λ2), S2(λ3) ;
;
,
,
,
,
,
.
,
,
,
,
,
,
,
-
,
,
,
,
,
-
,
.
Sl(λ), S2(λ)
,
,
(
b):
4
-
BY 12538 C1 2009.10.30
U1
= f1 (a , T)
U2
U1 , U 2 -
U1
= f 2 (b, T),
U2
(5)
,
.
b),
(
ε(λ)
,
1,
λ1, λ2, λ3,
2,
3,
-
.
1,
1,2,
,
ρ1, 2 =
2,
3
2,3
ρ(λ1 ) 1 − ε(λ1 )
ρ(λ 2 ) 1 − ε(λ 2 )
=
, ρ 2, 3 =
=
.
ρ (λ 2 ) 1 − ε (λ 2 )
ρ (λ 3 ) 1 − ε (λ 3 )
(6)
(3)
(4)
-
(6)
(
,
b),
.
(5),
.
,
,
:
,
(
b)
,
;
,
-
.
,
,
.
,
1,
2 (
, J16SI
Judson Technologies,
K-3413-08
HAMAMATSU, S/IGA2.2-025/010, UVS/IA-025/020
Electro Optical
Systems).
1,
,
.
U1, U2,
,
,
,
, 1, 2, 3, 4.
GaSb [5-7],
2-3
,
InAs [8].
,
,
.
1,
2
3.
4,
.
.
5
BY 12538 C1 2009.10.30
.
-
,
,
∞
U1 (T)
=
U 2 (T )
∫ ε( λ ) L
(λ, T)S1 (λ )dλ
0
∞
,
∫ ε (λ ) L
(7)
(λ, T )S 2 (λ )dλ
0
ε(λ) S1(λ), S2(λ) -
;
,
,L
(
(λ,T) -
).
(3)
:
∞
U1 (a , T)
=
U 2 (a , T )
∫ exp(a ⋅ λ)L
(λ, T)S1 (λ )dλ
0
∞
.
∫ exp(a ⋅ λ)L
(8)
(λ, T)S2 (λ )dλ
0
,
S1(λ)
S2(λ),
,
:
-
,
:
U1
= f1 (a , T).
U2
(9)
(9)
.
,
.
,
-
.
-
U1λ1 , U1λ 2 , U 2λ 2 , U 2λ 3 ,
1,
λ2, λ3.
2,
λ1,
3
λ2
Sl(λ) S2(λ),
-
U kλ i − U k
(U
(U
(U
=
(U
ρ1, 2 =
1λ 1
1λ 2
ρ 2 ,3
ρ1,2 ρ2,3:
U1λ1 − U1 Pλ 2 S1 (λ 2 )
) [P S (λ )] = (
− U ) [P S (λ )] (U
− U ) [P S (λ )] (U
=
− U ) [P S (λ )] (U
− U1
λ1 1
1
1
λ2 1
2
1λ 2
)
,
− U )P S (λ )
− U )P S (λ )
,
− U )P S (λ )
λ1 1
1
1
2λ 2
2
λ2
2
2
2λ 2
2
λ3
2
3
2λ3
2
λ3
2
3
2λ 3
2
λ2
2
2
Pλ1 , Pλ 2 , Pλ 3 -
1, 2, 3.
ε(λ)
6
(10)
BY 12538 C1 2009.10.30
1 − ε 0 exp (aλ1 )
1 − ε0 exp(aλ 2 )
= ρ1, 2 ,
= ρ 2, 3 .
1 − ε0 exp(aλ 2 )
1 − ε0 exp(aλ3 )
(11)
(9).
(4)
b
,
∞
U1
= f 2 (b, T) =
U2
∫ β0 (λ / λ 0 )
0
∞
b
L
(8),
(λ, T)S1 (λ)dλ
.
∫ β 0 (λ / λ 0 )
b
L
(12)
(λ, T)S2 (λ)dλ
0
ρ1,2, ρ2,3
(10)
1 − β0 (λ1 / λ 0 ) b
1 − β 0 (λ 2 / λ 0 ) b
= ρ1, 2 ,
1 − β 0 (λ 2 / λ 0 ) b
= ρ 2 ,3
1 − β 0 (λ 3 / λ 0 ) b
-
(13)
b.
(12).
,
0,15 %,
2
10 %.
:
1.
, 1999.
2.
. - .:
3.
.
. -
.,
, 1978.
.,
.
:
.
-
:
/
.
.
, 1974.
4.
2290614, G 01J 5/60,
. 27.12.2006,
. 36.
5. A. Joullié, P. Christol, A.N. Baranov, A. Vicet: Mid-infrared 2-5 µm heterojunction laser
diodes. Topic Appl Phys. 80, 2003, 1-59.
6. A. Joullié, G. Glastre, R. Blondeau, J.C. Nicolas, Y. Cuminal, A.N. Baranov, A. Wilk, M.
Garcia, P. Grech, C. Alibert: Continuous-wave operation of GalnAsSb-GaSb type-II quantumwell ridge-lasers. IEEE J. Select. Topic Quantum Electron. 5, 1999, 711-714.
7. A. Salhi, D. Barat, D. Romanini, Y. Rouillard, A. Ouvrard, R. Werner, J. Seufert, J.
Koeth, A. Vicet, A Garnache: Single-frequency Sb-based distributed-feedback lasers emitting at
2.3 m above room temperature for application in tunable diode laser absorption spectroscopy.
Appl. Opt. 45, 2006, 4957-4965.
8. P. Christol, M.El Gazouli, P. Bigenwald, A. Joullié: Performance simulation of 3.3 m interband laser diodes grown on InAs substrate. Physica E: Low-dimensional Systems and Nanostructures 14, 2002, 375-384.
.-
.
220034, .
,
.
, 20.
7
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