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Патент USA US3054043

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SePt- 1,1, 1962
KAZUO IWAMA ETAL
3,054,033
JUNCTION TYPE SEMICONDUCTOR DEVICE
Original Filed May 21, 1957
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Patented Sept. 11, 1962‘
2
tion energy than ordinary group III element, for instance
3,054,033
JUNCTEON TYPE SEMICONDUCTOR DEVICE
Kazuo Iwama and Reona Ezaki, Tokyo, Japan, assignors
to Sony Corporation, a corporation of Japan
Original application May 21, 1957, Ser. No. 660,650.
Divided and this application Jan. 18, 1960, Ser. No.
7,507
10 Claims. ((31. 317-234)
copper.
A method for making a germanium p-n-(p) structure
suitable for the present device is as follows:
We choose copper and indium as acceptors and anti
mony as donor. Initially, a n-type germanium single
crystal of approximately 2 ohm-cm. containing antimony
is prepared. After being dipped in diluted aqueous 1solu_
tion of cupric nitrate and thereafter dried, this crystal
This application is a division of your application Serial 10 is heated in inert gas in order to make copper atoms
uniformly diffuse in germanium. By heating at 700° C.
No. 660,650, ?led May 21, 1957, now abandoned.
This invention relates to a junction type semiconductor
for about one hour, copper atoms of 3.6><1015 cm._3
device, which is a transistor-like switch diode. The cur
in concentration forms acceptor levels, resulting in chang4
rent-voltage characteristic of the device has three regions
ing into p-type one of 1.3 ohm-cm.
of high resistance, negative resistance and low resistance, 15
The crystal thus obtained was sliced into wafers and
respectively. The characteristics are also photosensitive
etched with an etchant as CP-4. And thereafter a dot
so that the device may be triggered by either an optical
of pure indium is attached on the surface of the wafer
or an electrical impulse.
and then fused, heating for a few minutes in the hydrogen
A junction type semiconductor device according to
furnace of 550° C. Thereafter nonrectifying electrode
this invention comprises at least three regions of semi 20 was soldered to another surface of the wafer. FIG. 2
conductors that is a p-n-(p) structure. One of the three
shows schematically a p-n-(p) structure ofpthis device
regions is sandwiched by the other regions and the latter
thus formed. That is, 13 designates an indium dot, 14
regions have electrodes connected thereto with ohmic con
a germanium wafer and 15 a metallic electrode to which
the wafer is electrically connected with ohmic contact.
ducting type, but one of the outer regions has higher 25 16 shows a sandwiched n-type layer.
conductivity than the other.
With heating process in the hydrogen furnace of 550°
It is an object of this invention to provide a semicon
C., the reverse-diffusionrof copper and the fusion of
ductor device having a negative resistance.
indium are carried out at the same time. FIG. 3 shows
It is another object of this invention to provide such
the impurity concentration N in cm.~3 along A—A’ line
30 can be approximately drawn as a function of the dis
a device as having rapid switching action.
It is a further object of this invention to provide a
tance D in microns from the interface between germani
semiconductor device having high photosensitive char
um and indium, taking hereinafter described considera
acteristics.
tions. The fused indium forms a step pé'n junction I1
It is a still further object of this invention to provide
in the neighborhood of surface in the conventional way
a semiconductor device which is applicable instead of 35 if the germanium is n-type. On the other hand, the be
an ordinary discharge tube.
havior of copper having large diffusion coefficient in
Other objects, features and advantages of this inven
germanium is a little different. The concentration of
tion will be more fully apparent from the following de
copper NGS near the interface between germanium and
tailed description given with the ‘accompanying drawings,
indium is estimated from the distribution coe?icient K’
in which:
of copper between germanium and germanium-indium
FIG. 1 is a schematic representation of the construc
copper ternary melts 10-6. Since the atom fraction of
tion of a p-n-(p) junction type semiconductor device ac_
copper in the melt is below 10-3, Ncs is supposed to be
under 10*9 atom fraction, if an equilibrium condition is
cording to this invention, an external circuit being con
nected thereto.
established in the boundary. Therefore, Ncs is under
FIG. 2 shows one example of the devices according to 457 stood to be below 1013 emf-3, which is much smaller
this invention.
in comparison with 3.6><1015 cmf3 originally containedv
in the solid. vIf the system is heated long enough, the
FIG. 3 shows concentration curves of impurity elements
entire amount of copper in the solid is to be absorbed
taken along A—A’ line of the semiconductor device shown
in FIG. 2.
into the melt, resulting in the concentration of approxi
FIG. 4 illustrates typical characteristic curves of the 50 mately 1013 cm.—3. With heating shortly in the vicinity
semiconductor device according to this invention.
of 550° C., however, we could expect such a distribution
FIG. 5 is a calculated characteristic of the semicon
of the copper concentration as is NOS at the surface
ductor device according to this invention; and
and N00 in the interior, drawn in FIG. 3, and the second
FIG. 6 shows photo-sensitivity curves of the semicon
p-n junction I2 is formed rather inwards, where ND
ductor device according to this invention.
is the original concentration ofantimony, 8><1014 0m._3,
Referring to the drawing, FIG. 1 shows schematically
and N1 is that of indium. If the depth to which indium
penetrates during heating is neglected and the diffusion
a construction and an external connection of a semi
conductor device according to this invention. This de
of copper follows Fick’s law, the distribution is given
vice has three regions 1, 2 and 3 which are respectively
by the next,
2
co
p-type, n-type and (p)-type and two boundaries 6 and 7 60
Nc=Nco_(N o'_'_Nce)—
ehvrdg
which behave as p-n junctions. The former is a step
c
1/1; z/ZJE
junction, while the latter is ‘a graded junction. .The p-type
where D.x and t are respectively the diffusion coe?icient
and (p)-type regions have respectively electrodes 4 and
of copper, the distance from the boundary and heating~
tact. The outer regions are of substantially the same con
5 which are ohmic contacts ‘and are respectively con
on time. D is approximately 7><10-8 cm.2/sec. at 550°
nected to one electrode of a source 8 and one end of 65 . C. The thickness of the n-type layer obtained by this
a load 9 through lead wires 10 and 11, the other elec
trode of the source 8 and the other end of the load
9 being connected with ‘a lead wire 12. In this case
process is over the range from 10 to 20 microns.
The
thickness of the n-type layer and the speci?c resistivity
of each region can easily be adjusted by changing amounts
the electrode 4 is positively biased by the source8 in
70 of original antimony and copper and heating-on time.
respect to the electrode 5. The hatched region 3 is a .3 Because of very small diffusion coe?icient of the group
p-type, containing acceptor impurity having higher ioniza
V element at 550° C., there would be almost no change
3,054,033
3
ii
in original concentration of antimony. The substantially
111: the density of holes and of electrons in an intrinsic
sample
similar result can ‘be obtained in this, case by using such
an alloy as lead-gallium, lead-aluminum, indium-gallium
p: the density of holes in the vicinity of the junction inside
and indium-aluminum instead of indium and also such
of the collector.
an impurity element as phosphorus; arsen and bismuth
instead of antimony. Moreover, using tin or lead, though
In this device p is approximately 1014 cm.“3 at room tem
perature, and therefore or becomes 1.1.
they are neutral impurity different from indium, it might
(2) The low frequency current transport ratio across
the base region B should be determined by two terms, one
due to surface recombination and the other to volume
absorb copper and make the small region around dot
convert ‘to the original n-type. Thus the second p-n
junction I2 is formed, ‘while no p-n junction J1 near the
surface is recognized.
*
recombination.
I
is used as one of acceptor impurities.
In the case of the alloyed emitter in our
device, the former might be the major factor. Therefore
It will be clear that other well-known methods in the
transistor technology can also be applied for making a
p-n-p junction suitable for this invented device, if copper
,8 would increase the enhance of the current for the sake
ofbuilt-in accelerating ?eld in relatively high resistivity
15
base-region.
(3) The current emission ratio 7 at the emitter is
FIG. 4 is the characteristic of the semiconductor device
according to this invention, where the abscissa and the
ordinate represent respectively the applied voltage and
Applying a larger voltage V in comparison with H‘
the current. When the voltage is negatively applied, a
the emitter and the collector, the ?owing current
small saturation current Is’ ?ows. When the voltage is 20 Ibetween
is given by
positive, as far as it is small, only another small satura
tion current Is ?ows. The device has a high resistance
Neonst-ant 1,3
at this region 17. However the current increases gradual
_-——-1_a?7 V
(1)
ly with the increase of the applied voltage and the curve
According to W. M. Webster’s calculation published in
bends up near VB and IB and turns over into the region 25 Proceedings of the IRE, 42, 914 (1954), {3 satis?es the
18 of negative resistance. Finally the curve reaches VI,
following equation, when ,6 at 1:0 is ?g,
and I1, and becomes the region 19 of very low resistance.
The observed values of Is’, 1,, V3, 13, VI, and 1;, over
the temperature range from —20? C. to 37.5“ C. for
several specimens of this invented device, are listed in 30
Table I.
I
Table I
Specimen
at?.
Inga.
a
volts
5? .
IB/IL
35
No; 10am";
kr/g=0.o2.6 volt
No. 106
No. 107 .... -_
were
No. 10S
moate'cni
40
01120.1 ohm--1 emf1 (conductivity of base region)
A.=7.l X 10-14 cm.2 (cross-sectional area)
b~2 (mobility ratio)
H 1e
and therefore
45
Z =2 - 103 -I
g(Z) is a function called “the ?eld factor” by Webster,
but we used a slight different function from his in order
to simplify the calculation.
From Eqs. 1 and 2, it is seen that current increases,
50
subject only to limitation by circuit resistance, when I
The present current-controlled negative resistance can
reaches IL, the current corresponding to unity total alpha,
not be ascribed to such an effect of heating as is usually.
that is a?7=l. From Eq. 2, 5 for lower current than
observed in the reverse direction of the point-contact
diode, because the wattage of theproduct IL- VL is much
lessthan the product lB-VB and moreover the transition
IL is igven by
55
from VB to V1,- and vice verse. ‘is ?nished within, less than
1 microsecond. The curve A is observed in dark and is
' ansformed to the curve B and C with increasev of the in
tensity of an incident light.
'
The design theory of the junction transistor explains 60
why this transistor-like diode device provides negative re
sistance. Let us consider that p-region, n-region and (p)
region are respectively equivalent to alloyed emitter, dif
fused base and collector, and. discuss the following quan 65
tities:
(‘1) The collector junction current multiplication ratio
where H is independent of both Z and V. When We take
a which results from the flow of holes out of the collector
IL=2 ma, that is ZL=4, the above equation is plotted in
body might be approximately given by the next expres—
sion,
FIG. 5, similar to the observed curve.
7742
412(1. + (1F)
where
b: the mobility ratio
The current 13
70 at the breakdown voltage VB is given by the condition of
75
3,054,033
5
When ZL=4,
Therefore
IB /1L=0.3 1
which coincides approximately with the observed value
in Table I.
.
.
,
6
r
said ?rst region having an impurity of a low diffusion co
efficient forming a stepped type junction with said second
region, said third region containing a short lifetime and
large diffusion coef?cient impurity, having a resistance
which is relatively high by comparison to that of said
?rst region, and forming a graded type junction with said
second region, a ?rst ohmic contact to said ?rst region,
The characteristic might depend upon temperature
and a second ohmic contact to said third region, all pro
through, H, a, [3 and 7. Especially the temperature de
viding a negative resistance across said contacts of said
pendency of 0: determined by Eq. 1 would be rather im
IO diode.
portant. In case of usual acceptors,
3. A negative resistance, photo sensitive, diode com
prising, a body of group IV semiconductor material hav
7L3 2
ing ?rst and third regions with carrier forming, group
III impurities therein and a second region having carrier
might sharply decrease at low temperature. However,
forming, group V impurities therein between said ?rst
because of using Ctr-diffused one of higher ionization en 15 and third regions and forming junctions therewith, said
ergy than the group III element, the variation with tem
?rst region having, as its dominant impurity, an impurity
perature is considerably reduced in this device.
of a large di?usion coef?cient forming a graded type
'It will be understood that a desirable device can be
junction, and said third region having, as its dominant
made by choosing appropriate values of a, {3 and 7, ac
20 impurity, an impurity of a relatively low diffusion co
cording to the above analysis.
ef?cient and of a short lifetime in a relatively high con
FIG. 6 shows photo-sensitivity of the semiconductor de
centration to give a relatively low resistance and pro<
vice according to this invention. The curve 21 is plotted in
viding a stepped type junction, and ?rst and second ohmic
a dark room. The curves 22, 23, 24, 25, and 26 are re
contacts to said ?rst and third regions respectively, all
spectively plotted in the light intensity of 100, 2-00, 300,
providing a negative resistance between said contacts.
25
400 and 500 luxes. It will be observed that the photo
4. A current controlled negative resistance diode com
response is very rapid, because the (p)-type region of the
prising ?rst and second, series connected, diode junctions
device is short lifetime owing to dopping of copper.
of opposed polarities formed by three regions of semi
(10)
The junction type semiconductor device according to
conductor material each having carrier-forming impuri
this invention has many advantages, for example, as fol
30 ties therein, a ?rst and third of said regions being of a
lows:
conductivity type opposite to that of the second of said
(1) It can be used as a switching element of a super
regions, said ?rst region having a connected contact and
miniature type, light in weight and small in power con
a concentration of a low di?'usion coe?icient impurity
sumption.
which is higher than that of said second region so that
(2) It can be used for a switching apparatus triggered
35 its resistance is lower than that of said second region
with light because of excellent sensitivity and good re
sponse towards light.
(3) All usage similar to that of the usual discharge
tube is possible.
(4) L-C resonant oscillator, R-C relaxation oscillator
and etc., can be made with this device.
While we have explained a particular embodiment of
our invention, it will be understood, of course, that we
do not wish to be limited thereto since many modi?cations
may be made and we, therefore, contemplate by the ap
pended claims to cover any such modi?cations as are
Within the spirit and scope of our invention.
What is claimed is:
1. A junction type semiconductor device comprising
three regions of semiconductors having carrier-forming
impurities therein forming junctions therebetween, an
inner one of said three regions being sandwiched between
two side regions, and two electrodes respectively at—
tached to said side regions to form a diode, both said
side regions being of substantially the same conducting
and forming a relatively abrupt junction therewith and
said third region having a connected contact and a con
centration of a high diffusion coei?cient impurity which
is lower than that of said second region so that its re
sistance is higher than that of said second region and
forming a relatively broad and graded type of junction
therewith, whereby a current passing through the contacts
of said diode initially increases gradually with increases
of voltage and ?nally bends at a certain value of the
voltage and thereafter increases with decreases of the
voltage thus providing a negative resistance characteristic.
5. A negative resistance diode which is photo sensitive
to incident light comprising at least three semiconductors
having charge carriers therein and connected in series
to provide at least two junctions of opposed polarity, one
of said junctions of opposed polarity, one of said junc
tions being of the step and abrupt type and another of
said junctions being of the high dilfusion, graded, and
relatively wide type to provide a negative resistance
thereacross and for modulation thereof by light incident
type but one of said side regions containing copper as a 55
large diffusion coefficient acceptor, having relatively high
resistance by comparison to the other side region, and
forming a graded type junction with said inner region,
the other of said side regions having a low diffusion co
thereon.
6. A diode connected device comprising at least three
regions of semiconductor having charge carriers therein
and connected in series to provide at least two diode-like
e?icient impurity therein forming a stepped type junction 60 junctions of opposed polarities therebetween, one of said
with said inner region, whereby said diode device has
characteristics so that a current passing through said two
electrodes initially increases gradually with increase of
the positive voltage applied across said two electrodes
junctions being of the step type and the other being of
the graded type, the current multiplication ratio of the
graded type junction being of the order of greater than
one, the current transport ratio across the intermediate
region being of the order of less than one, and the mo
but ?nally bends at a certain value of the voltage and 65 bility ratio being of the order of 2x103 times the cur
increases therefrom with decrease of the voltage so as to
rent ?owing through said diode device whereby it has a
show a negative resistance characteristic.
current controlled, negative resistance characteristic.
2. A negative resistance, photo sensitive, diode com
prising, a semiconductor body having ?rst, second, and
third regions having carrier-forming impurities therein
forming junctions therebetween, said second region being
disposed between, and being of opposite conductivity
7. A diode connected device comprising ?rst, second,
and third regions of group IV semi-conductor having
carrier~forming impurities therein and connected in series
to provide diode-like junctions of opposed polarities there
between, said second middle region having a group III
type from, said ?rst and third regions to form ?rst and
impurity and said ?rst and third outer regions having
second junctions at the interfaces between said ?rst and
second and said second and third regions respectively, 75 group V impurities therein, one of said outer regions hav
3,054,033
7
8
ing such an impurity of a low di?usion coe?‘icient form
mg a stepped junction and- the other of said outer regions
having a lower, and higher resistance, concentration’ of
such an impurity having, a large dilfusion coe?icient ‘form
ing a graded junction to provide a negative resistance
characteristic for current ?ow through said diode device.
8. A junction type, diode device comprising’ at least
three regions of semiconductor, one of said three regions
tbeing sandwiched by the other two side regions, said
jacent and oppositely directed p-n type junctions of con
trasting diiferent Widths and said diode having contrasting, ,
di?erent resistivities on the two outer ‘sides of said two
adjacent junctions with the outer side adjacent the wider
junction having the higher resistance, all providing a nega
tive resistance ‘for a range of increasing currents through
said two adjacent junctions.
regions having impurities therein providing two junctions 10
therebetween, and two electrodes respectively attached to
said side regions, both side regions being of the same
conductive type but one of said‘ side regions containing
copper as a highly diifused acceptor, having relatively
high resistance and forming a graded type junction, the 15
other of said side regions containing an impurity of a low
diifusion coe?‘icient, having a relatively low resistance and
forming a stepped type junction, providing a diode hav
ing a positive and then a negative resistance for increas
ing values of currenttherethrough.
9. A diode comprising two electrodes having, in series,
therebetween a ‘?rst, p-n type junction ‘which is broad
and graded and a second, adjacent, and oppositely di
rected, p-n type junction which is abrupt and narrow
relative to said ?rst junction providing a current con
25
References Cited in the ?le of this patent
UNITED STATES PATENTS
2,701,326
2,772,360
2,781,481
2,793,145
2,794,917
2,813,233
2,836,521
2,836,523
2,840,497
2,850,413
2,854,366
2,861,226
2,940,022
2,997,604
1955
1956
1957
1957
1957
1957
1958
1958
1958
1958
1958
1958
1960
1961
FOREIGN PATENTS
trolled, negative resistance characteristic.
110. A solid state diode including, in series, two ad
Pfann _______________ __ Feb. 1,
Shockley _____________ __ Nov. 27,
Armstrong ____________ __ Feb. 12,
Clarke _______________ __ May 21,
Shockley _____________ __ June 4,
Shockley ____________ __ Nov. 12,
Longini ______________ __ May 27,
Fuller _______________ __ May 27,
Longini ______________ __ June 24,
'Sehmich _____________ __ Sept. 2,
Wannlund et al ________ __ Sept. 30,
Lootens _____________ __ Nov. 18,
Pankove ______________ ___ June 7,
Shockley ____________ __ Aug. 22,
779,666
Great Britain __________ __ July 24, 1957
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