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Патент USA US3086160

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April 16, 1963
Filed July 24, 1959
Herman E. Held
BYE/Mb 45am
Patented Apr. 16, 1963
capacitor illustrating details of its construction and as
Herman E. Held, 24 Adam, Atherton, Calif.
Filed July 24, 1959, Ser. No. 829,511
5 (Ilaims. (Ci. 317-458)
This invention relates generally to the arrangement of
FEGURE 3 is a schematic view in section, illustrating
the manner of connecting the capacitor into an electrical
FIGURE 4 is a like view showing a modi?ed form of
the invention;
FIGURE 5 is an exploded view in perspective of a
further modi?ed form of the invention; and
FIGURE 6 is a sectional view showing the manner of
ularly to such an arrangement adapted to effective opera 10
assembly of the device of FIGURE 5.
tion under conditions of very high voltage and tempera
conductors and dielectric material in a capacitor for pur
poses of securing an appreciable capacitance and partic
The essential feature of any capacitor is the provision
Generally stated, the present invention is predicated on
my discovery that dense, nonporous, high strength alumi
of two or more conductors separated by a dielectric ma
num oxide ceramics possess an unexpected stability of
terial. Many modern capacitors for low voltage opera
tion consist of’ alternate metal and dielectric plates or
sheets, which sometimes comprise metal or foil separated
with exceptional dielectric strength. It is also predicated
dielectric constant with variation in temperature along
on my discovery that a capacitor composed of alternate
layers of this ceramic material with a noble metal will
operate with exceptional effectiveness at very high volt
tic, mica, etc. For higher values of capacitance, it is
necessary to use thinner layers of a material of higher 20 ages and at temperatures in excess of 1000° F. In addi
tion, such capacitors are easily fabricated, light in weight,
dielectric value and strength. This is because the value
durable, and highly adaptable for use in the electric and
‘of capacitance, although increasing with the dielectric
electronic industries.
constant and area of the dielectric, decreases with the
The aluminum oxide employed as a dielectric herein,
thickness of the dielectric. Thus, the thinner the dielec
should be dense, nonporous and of high mechanical
tric, the higher the capacitance. By way of illustration,
strength. it should have an aluminum oxide content of
relatively high values of capacitance have been obtained
at least 85% and preferably about 95% to 100% alumi
with very thin ?lms of a dielectric, such as tantalum
num oxide (A1203). It should also have a dielectric
oxide ?lm on tantalum metal plates, or aluminum oxide
constant of the order of 9 to 10. I have found that alu
on aluminum plates.
Despite a wide variety in the arrangement of conduc 30 minum oxide ceramics of the character described have a
by electrical insulating materials such as Wax paper, plas
tors and dielectric in the formation of capacitors, no ar
dielectric constant which does not vary more than 10%
rangement to date has been entirely successful in provid
constant with changes in temperature and particularly
over the ‘range of temperatures from 0° up to 1000° F.
In addition, such dielectric has a very high dielectric
strength which does not appreciably vary over this range
of temperatures. For example, its dielectric strength at
500° F. determined for a thickness of the dielectric of
0.001 inch, is over 500 volts. At 1000~° F. the dielectric
strength is still at a relatively high value of 175 volts.
upon increase of operating temperatures into the range
indicated. On the other hand, materials which are stable
at high temperatures or possess relatively stable dielec
capacitor, the material employed as a conductor should
ing a compact, low cost, rugged capacitor that will suc
cessfully ‘operate at high voltages and particularly at high
temperatures (e.g. 1000” F. and over). Materials pos
sessing high dielectric constant are generally subject to
deterioration or to a wide variance in the value of the
tric constant have not been found to possess su?icient
dielectric strength to resist voltage breakdown. It follows
that a capacitor capable of effective operation at high
voltage and temperature should be capable of resisting
effects of such temperature ‘and have a su?iciently high
dielectric strength to resist voltage breakdown and a rela
tively high temperature stable dielectric constant to insure
a desired uniform value of capacitance. Obviously a
dielectric material possessing these characteristics is highly
to be desired.
be capable of withstanding all temperatures within the
indicated operating range, without deterioration due to
oxidation or other causes. It should also be resistant to
corrosion. I have found that the noble metals are par
ticularly suited for the purpose since they will withstand
temperatures in excess of 1000° F., are noncorrosive, and
are excellent conductors. As referred to herein the term
“noble metals” is intended to include gold, silver, metals
of the platinum group (e.g. iridium, osmium, palladium,
rhodium, and ruthenium), and alloys of these metals with
one another.
In general, it is an object of the present invention to
provide a capacitor in which the dielectric possesses both
high dielectric strength and a high, temperature stable
dielectric constant.
To take full advantage of the high temperature, high
voltage properties of the aluminum oxide ceramic, in a
It is another object of the invention to provide a capaci
tor of the above character which is capable of reliable,
effective operation :at very high voltages, and at tempera
tures ranging up to 1000'0 F. and higher, in rugged com
pact form.
Another object of the invention is to provide such a
capacitor which is highly resistant to voltage discharge
In fabricating a capacitor in accordance with the in
vention, I prefer to employ alternate thin wafers or layers
of aluminum oxide ceramic shapes and noble metal, in
the manner indicated in FIGURE 2. Any number of
the alternate ceramic and metal wafers or disks can be
stacked in this fashion, prior to consolidating in a furnace.
In a preferred procedure, the ceramic disks are ?rst
coated with a thin ?lm of a ground glass which can be
applied by spraying, silk screening, dusting, or by dipping
the ceramic disks into the powdered glass material. The
glass employed should be one that does not soften at the
maximum operating temperature of the capacitor and
and to deterioration occasioned by moisture and other 65 which has a ?ow point under the melting point of the
corrosive agents normally encountered in service.
conductive metal. The glass also should have a low elec
Other objects and advantages of the invention will be
trical loss factor, possess a reasonably high dielectric
apparent from the following description of an exemplary
strength, and be resistant to deterioration by moisture or
embodiment thereof, and from the drawing in which:
other corrosive agents of the type normally encountered
FIGURE 1 is an enlarged sectional view of a section 70 in service. A number of the boro silicate glasses possess
of a capacitor embodying the principles of the invention;
FIGURE 2 is an exploded view of the components of a
these characteristics, for example, such glasses containing
about 10 to 13% of B203 and 80 to 83% silica.
Referring again to FIGURE 2, the metal wafers 10 of
tively high voltages and at temperatures up to 1000° F.
and higher without deterioration or breakdown, compris
ing a selfesupporting ceramic wafer of substantial thick
conductive material are positioned between the glass
coated ceramic wafers 12 and the entire unit assembled
into a stacked assembly, for example, as in FIGURE 3.
ness composed of dense nonporous aluminum oxide, said
The stacked assembly is then transferred to a furnace U! wafer being characterized by a relatively high and uniform
and heated to a temperature above the melting point of
dielectric strength and a substantially nonvarying dielec
the glass employed, but below ‘that of the metal. The
tric constant over the temperature range up to about
glass on softening, flows over the surface of the ceramic
1000° F., metal wafer conductors ‘on each side of said
and the adjacent metal of the conductors and bonds them
ceramic wafer, said metal wafers being selected from the
together. This bonding of the disks 1t) and 12 is illus 10 group of pure metals consisting of gold, silver, metals
trated in detail at 14 in FIGURE 1. Upon cooling, the
of the platinum group, and alloys of these metals with
resulting capacitor can be used in the manner of any
conventional capacitor, and to facilitate such use the
conductors 10 are preferably provided with extending
each other, and a thin layer of glass fused to exterior sur
face portions of said ceramic wafer and bonding said
conductors thereto, said glass covering surface and periph
terminal portions 16. These terminals can be positioned 15 eral edge portions of said ceramic wafer and ?lling void
‘to face in opposite directions to minimize voltage dis
spaces between said wafer and adjacent conductors,
charge between adjacent conductors. The terminals on
whereby the glass serves not only to bond the ceramic
a side can also be aligned with one another to facilitate
wafer and conductors into an integral unit but also to
connections in parallel or at the same potential, for
increase the resistance of the leakage path around the
example, as in FIGURE 3.
ceramic wafer.
In constructing the capacitors of the invention, it is
2. A capacitor as in claim 1 wherein said metal wafers
desirable that the possibility of voltage discharge be
are smaller in size than said wafers of aluminum oxide,
tween conductors around the ends of the ceramic Wafers,
and each is provided with a protruding terminal portion
be reduced to a minimum. In the embodiment of FIG
extending in a direction opposite to that of the terminal
URES 1 to 3 this is accomplished by making the con 25 portion of the closest adjacent metal wafer.
ducting wafers 16 substantially smaller in diameter than
3. A capacitor as in claim 1 wherein said glass em
the dielectric wafers 12. This has the effect of substan
ployed as a surface coating has a reasonably high dielec
tially lengthening the leakage or voltage discharge path
tric strength, a low electrical loss factor, and a softening
between adjacent metal conductors. An alternative con
point below that of the metal.
struction illustrated ‘in FIGURE 4, is to additionally ?ll 30
4. A lightweight capacitor adapted to operate at rela
the voids between the alternate wafers with insulating
tively high voltages and at temperatures up to 1000° F.
deposits 18 of glass, These deposits are preferably posi
and higher without deterioration or breakdown, compris
tioned adjacent the peripheral edge of the conducting
ing a plurality of self-supporting ceramic wafers of sub
stantial thickness composed of dense nonporous alumi
A further variation illustrated in FIGURES 5 and 6 is 35 num oxide, said Wafers being characterized by a relatively
to construct the wafers 12 with a central recess 20‘ adapted
high and uniform dielectric strength and a substantially
to receive the conducting wafers 10. Axial passages 22
nonvarying dielectric constant over the temperature range
can be provided to accommodate the extending7 termi—
up to about 1000° F, metal wafer conductors on each
nals 16.
side of said wafers, said metal wafers being composed of
In the use of the described capacitor, selected termi 40 pure metal selected from the group consisting of gold,
nals 16 can be connected into the circuit by any suitable
silver, metals of the platinum group, and alloys of these
conductive means, such as a copper conductor or other
metals with each other, and a thin layer of glass fused to
electrical conductor 24. However, for high temperature
exterior surface portions of said wafers and bonding the
operation, the conductors 24 should at least be as re
same into a stack of alternate ceramic and metal wafers,
sistant to high temperatures as the materials of the capaci 45 ‘said glass covering exposed surface and peripheral edge
tor itself, and preferably should be of the same metal as
portions of said ceramic wafers and ?lling void spaces
used for the conductive wafers 10. The junctures be
between said ceramic wafers and adjacent metal wafers,
tween the terminals and the conductors should also be
whereby the glass serves not only to bond the wafers into,
resistant to high temperatures, for example through use
an integral unit but also to increase the resistance of the
of resistance welding or an oxidation resistant brazing 50 leakage path around the ceramic wafers.
5. A capacitor as in claim 4 wherein central portions
wafers 10, and are fused to the ceramic dielectric material.
From the foregoing, it should be apparent that the
present invention makes possible a lightweight capacitor
of said wafers of aluminum oxide are recessed to re
ceive said metal wafers, the extending terminal portions
which is not only capable of effective operations at very
of said metal wafers being accommodated by axial pas
high temperatures (in excess of 1000° F.) but also at 55 sages in side wall portions of said aluminum oxide wafers.
very high voltages.
To those skilled in the art to which this invention
relates, many changes in construction and widely differ
ing embodiments and applications of the invention will
suggest themselves without departing from the spirit and 60
scope thereof. By way of illustration, the conductors 10
need not be constructed as layers or plates of a solid ma
terial, but may comprise a conductive medium placed on
the ceramic wafers 12 by painting, plating, electro deposi
tion, evaporation, etc. Likewise, other suitable media 65
can be employed instead of glass for purposes of in:
sulating and fusing the conductive and dielectric layers
into a unit (e.g. various of the resins and plastic composi
tions especially designed for high temperature work such
as heat resistant phenolics and similar materials). It 70
should be understood therefore that the disclosures and
the description herein are purely illustrative and not in
tended to be in any sense limiting.
I claim:
1. A lightweight capacitor adapted to operate at rela 75
' References Cited in the ?le of this patent
Marckworth _________ __ June 23, 1931
Sander _______________ __ Dec. 3, 1940
Brennan ____________ __ Apr. 15,
Bailey ________________ .__ Jan' 5,
Stupakoff ___________ __ May 15,
Khouri et al ___________ __ Sept. 4,
Haynes _____________ __ Oct. 21,
Fitzgerald ___________ __ May 15,
Short ________________ __ Aug. 7,
Brownlow ___________ __ Nov. 27, 1956
Siefert _______________ __ Ian. 15, 1957
Great Britain _________ __ July 30, 1935
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