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JP2013150198

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DESCRIPTION JP2013150198
Abstract: An element 20 having stable characteristics is provided. An element 20 includes a
silicon substrate 11 and a lower electrode layer 12 to which a DC voltage is applied, having a
plurality of lower wiring portions 12B connecting a plurality of lower electrode portions 12A and
a plurality of lower electrode portions 12A; An upper portion to be a ground potential having a
plurality of upper electrode portions 16A opposed to the respective lower electrode portions 12A
and a plurality of upper wiring portions 16B connecting the plurality of upper electrode portions
16A via the respective cavities 14 An electrode layer 16 and a capacitor 60 connected in series
with at least one of the lower electrode layer 12 and the upper electrode layer 16 are provided.
[Selected figure] Figure 6
Ultrasonic element and ultrasonic probe system
[0001]
The present invention relates to a capacitive ultrasonic element and an ultrasonic probe system
comprising a capacitive ultrasonic element.
[0002]
Ultrasonic diagnostic methods are in widespread use in which ultrasonic waves are applied to the
inside of the body, and an internal state of the body is imaged and diagnosed from echo signals.
An ultrasound endoscope is one of the ultrasound diagnostic apparatuses used for ultrasound
04-05-2019
1
diagnosis. In the ultrasonic endoscope, an ultrasonic transducer unit is disposed at the distal end
rigid portion of the insertion portion introduced into the body. The ultrasonic transducer unit has
a function of converting an electric signal into an ultrasonic wave and transmitting it to the body,
and receiving an ultrasonic wave reflected in the body to convert it into an electric signal.
[0003]
A plurality of ultrasonic elements (hereinafter simply referred to as "elements") constituting an
ultrasonic unit are manufactured using a cell using a piezoelectric ceramic material (for example,
PZT: lead zirconate titanate), or MEMS technology A cell composed of a capacitive ultrasonic
transducer (hereinafter referred to as "cacitive micro-machined ultrasonic transducer",
hereinafter referred to as "c-MUT") is used. Since c-MUT does not use lead etc., the environmental
load is smaller than an ultrasonic transducer using piezoelectric ceramics.
[0004]
<Structure of Cell> As shown in FIG. 1, in the cell 10 of the element 20, the lower electrode layer
12, the lower insulating layer 13, and the cavity 14 are formed sequentially stacked on the
silicon substrate 11 as a base. The upper insulating layer 15, the upper electrode layer 16, and
the protective layer 17 are provided. Although FIG. 1 shows the cross-sectional structure of one
cell 10, generally, several tens to several thousands of cells 10 constitute one element 20.
[0005]
The lower electrode layer 12 has a plurality of lower electrode portions 12A and a plurality of
lower wiring portions 12B extending from the edge of the lower electrode portion 12A. The
lower wiring portion 12B connects the lower electrode portions 12A of the other cells 10 of the
same element 20. The upper electrode layer 16 has a plurality of upper electrode portions 16A
and a plurality of upper wiring portions 16B extending from the upper electrode portion 16A.
The upper wiring portion 16B connects the upper electrode portions 16A of the other cells 10 of
the same element 20. Each cell 10 has a lower electrode portion 12A and an upper electrode
portion 16A which are disposed opposite to each other via the cavity 14.
[0006]
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2
All lower electrode parts 12A of a plurality of cells 10 arranged in the same element 20 are
connected to each other, and all upper electrode parts 16A are also connected to each other. A
driving voltage is applied to the lower electrode layer 12, and the upper electrode layer 16 is at
the ground potential.
[0007]
When a pulse voltage is applied between the lower electrode layer 12 and the upper electrode
layer 16 of the element 20, ultrasonic waves are generated by vibrating the membrane (vibrating
portion) including the upper electrode portion 16A by electrostatic force. Further, when an
ultrasonic wave is incident from the outside, the membrane (vibration part) is deformed to
change the distance between the lower electrode layer 12 and the upper electrode layer 16, so
that the ultrasonic wave is converted into an electric signal from the change in capacitance.
[0008]
In order to detect the capacitance, a constant DC voltage is always applied as a bias voltage to the
lower electrode layer 12, and a large pulse voltage is applied superimposed on this when
ultrasonic waves are generated.
[0009]
Since the insulating layer (the lower insulating layer 13 and the upper insulating layer 15) is
disposed between the lower electrode layer 12 and the upper electrode layer 16, even if the
membrane is largely deformed, the lower electrode layer 12 and the upper electrode There is no
short circuit with the layer 16.
However, when there is a defect in the insulating layer or the like, the lower electrode layer 12
and the upper electrode layer 16 are short-circuited, and when a DC voltage is applied, a DC
current flows between the electrode layers.
[0010]
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As shown in FIG. 2, in JP 2006-343315 A, an ultrasonic endoscope in which a fuse 64 is
connected in series to a wiring 181 for applying a voltage to an ultrasonic element 120 formed
of a plurality of cells 110. System 101 is disclosed. The lower electrode portion 112A and the
upper electrode portion 116A, which are disposed to face each other via the cavity 14, are
connected to each other via the lower wiring portion 112B and the upper wiring portion 116B.
When the lower electrode layer 12 and the upper electrode layer 16 are short-circuited, a large
current flows in the wiring 181, and the fuse 64 is fused.
[0011]
However, in the ultrasound endoscope system 101, a large current flows immediately before the
fuse 64 is fused. In addition, even if a short circuit occurs, if the current flowing is smaller than
the fusing current value of the fuse 64, the current continues to flow. For this reason, in the
ultrasound endoscope system 101, there is a possibility that the ultrasound observation
apparatus 103 may break down or the operation may become unstable.
[0012]
JP, 2006-343315, A
[0013]
Embodiments of the present invention aim to provide an ultrasound element with stable
operation and an ultrasound probe system with stable operation.
[0014]
An ultrasonic element according to an embodiment of the present invention includes a base, a
plurality of lower electrode portions, and a plurality of lower wiring portions connecting the
plurality of lower electrode portions, and a lower electrode layer to which a DC voltage is applied
A ground potential having a plurality of upper electrode portions disposed opposite to the
respective lower electrode portions via respective cavities and a plurality of upper wiring
portions connecting the plurality of upper electrode portions And an upper electrode layer, and a
current interrupting unit connected in series with at least one of the lower electrode layer and
the upper electrode layer, for interrupting only a direct current.
[0015]
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4
In addition, an ultrasonic probe system according to another embodiment of the present
invention has a base, a plurality of lower electrode portions, and a plurality of lower wiring
portions connecting the plurality of lower electrode portions, and a lower portion to which a DC
voltage is applied. A ground potential having an electrode layer, a plurality of upper electrode
portions arranged to face each lower electrode portion via respective cavities, and a plurality of
upper wiring portions connecting the plurality of upper electrode portions An ultrasonic probe
having an ultrasonic unit in which a plurality of ultrasonic elements including the upper
electrode layer are arranged at the tip of the insertion portion, a power supply for supplying
electric power to the ultrasonic unit, and the ultrasonic unit Observation unit having a
capacitance detection unit for detecting a signal from the control unit, a changeover switch for
connecting the power supply and the capacitance detection unit to the selected ultrasound
element, and a control unit for performing overall control If, comprising a, the ultrasonic probe
or the ultrasonic observation apparatus has a current interrupting portion, for blocking only a
series-connected direct current to at least one of the lower electrode layer or the upper electrode
layer.
[0016]
According to the embodiments of the present invention, it is possible to provide an ultrasound
element with stable characteristics and an ultrasound probe system with stable characteristics.
[0017]
It is sectional drawing for demonstrating the cell structure of cMUT.
It is a block diagram of the conventional ultrasonic probe system.
It is a perspective view of the ultrasound endoscope system of 1st Embodiment.
It is a perspective view of the insertion-part front-end | tip part of the ultrasound endoscope
system of 1st Embodiment.
It is a perspective view of the ultrasound unit of the ultrasound endoscope system of 1st
Embodiment.
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It is a block diagram of the ultrasound endoscope system of 1st Embodiment. It is a circuit
diagram of the ultrasonic endoscope system of a 1st embodiment. It is a circuit diagram of the
ultrasonic endoscope system of modification 1 of a 1st embodiment. It is a circuit diagram of the
ultrasonic endoscope system of modification 2 of a 1st embodiment. It is sectional drawing of the
cell of the ultrasonic element of 2nd Embodiment. It is sectional drawing of the cell for
demonstrating the manufacturing method of the ultrasonic element of 2nd Embodiment. It is
sectional drawing of the cell of the ultrasonic element of the modification 1 of 2nd Embodiment.
It is sectional drawing of the cell of the ultrasonic element of the modification 2 of 2nd
Embodiment. It is sectional drawing of the cell of the ultrasonic element of the modification 3 of
2nd Embodiment. It is sectional drawing of the cell of the ultrasonic element of the modification
4 of 2nd Embodiment. It is sectional drawing of the cell of the ultrasonic element of the
modification 5 of 2nd Embodiment. It is a circuit diagram of the ultrasonic endoscope system of a
3rd embodiment.
[0018]
First Embodiment Hereinafter, an ultrasonic endoscope system 1 which is an ultrasonic element
20 and an ultrasonic probe system of a first embodiment will be described with reference to the
drawings. The following figures are all schematic diagrams for explanation, and the number of
components, the size, the ratio of the size, etc. are different from the actual ones.
[0019]
<Configuration of Ultrasonic Endoscope System> As shown in FIG. 3, the ultrasonic endoscope 2
which is an ultrasonic probe constitutes the ultrasonic endoscope system 1 together with the
ultrasonic observation apparatus 3 and the monitor 4. The ultrasonic endoscope 2 includes an
elongated insertion portion 41 inserted into the body, an operation portion 42 disposed at a
proximal end of the insertion portion 41, and a universal cord 43 extended from a side portion of
the operation portion 42; Equipped with
[0020]
At the proximal end of the universal cord 43, a connector 44A connected to a light source device
(not shown) is disposed. From the connector 44A, a cable 45 detachably connected to the camera
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control unit (not shown) via the connector 45A, and a cable 46 detachably connected to the
ultrasonic observation apparatus 3 via the connector 46A It is extended. A monitor 4 is
connected to the ultrasonic observation apparatus 3.
[0021]
The insertion portion 41 has a small diameter and a long length from the tip end side to the tip
end portion 47, the curved portion 48 located at the rear end of the tip portion 47, and the rear
end of the curved portion 48 to the operation portion 42. A flexible tube portion 49 having
flexibility is connected in series. Then, a plurality of ultrasonic units 30 are disposed on the tip
side of the tip portion 47 (see FIG. 5).
[0022]
The operation unit 42 includes an angle knob 42A that performs bending control of the bending
unit 48 in a desired direction, an air / water button 42B that performs air supply and water
supply operations, a suction button 42C that performs suction operation, and a body to be
described later. A treatment tool insertion port 42D or the like which is an entrance of a
treatment tool having a puncture needle or the like is disposed.
[0023]
Then, as shown in FIG. 4, at the distal end portion 47 where the ultrasonic unit 30 of the
ultrasonic endoscope 2 is disposed, an illumination lens cover 31 which constitutes an
illumination optical system, and an observation optical system are observed. A lens cover 32, a
forceps port 33, and an air / water nozzle (not shown) are disposed.
[0024]
The ultrasonic unit 30 is, for example, an electronic drive type radial type as shown in FIG. 5, and
a plurality of elongated rectangular ultrasonic elements 20 are arranged in parallel cylindrically
at predetermined intervals with long sides.
On the outer peripheral surface of each of the elements 20, there is a transmitting / receiving
unit 21 in which a plurality of cells 10 for transmitting / receiving ultrasonic waves are formed,
an external electrode 26A, and an external electrode 26B.
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7
[0025]
The external electrode 26A is connected to the lead 81A of the cable 80.
On the other hand, the external electrode 26B is connected to the conducting wire 81B of the
cable 80 via the capacitor 60 surface-mounted on the outer peripheral surface. For example, the
capacitor 60 is a very small ceramic chip capacitor. The withstand voltage of the capacitor 60
may be equal to or greater than the maximum drive voltage (bias voltage + pulse voltage) of the
ultrasonic unit 30.
[0026]
FIG. 6 is a block diagram of an ultrasonic endoscope system 1 having an element 20. As shown in
FIG. The ultrasound observation apparatus 3 includes a power supply 3A, a changeover switch
3B, a capacity detection unit 3C, and a control unit 3D that performs overall control. A power
supply 3A, which is a voltage supply source, generates a DC voltage signal. The changeover
switch 3B applies a DC voltage signal to the conducting wire 81A of the element 20 selected
from among the plurality of elements 20 of the ultrasonic unit 30 under the control of the
control unit 3D. The capacity detection unit 3C detects a change in capacity of the element 20 at
the time of ultrasonic wave reception.
[0027]
As already described with reference to FIG. 1, the upper electrode portion 16A constituting the
membrane of the cell 10 of the element 20 is disposed opposite to the lower electrode portion
12A via the cavity 14.
[0028]
The lower electrode layer 12 to which a DC voltage is applied has a plurality of lower electrode
portions 12A and a plurality of lower wiring portions 12B connecting the plurality of lower
electrode portions 12A.
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The upper electrode layer 16 at the ground potential has a plurality of upper electrode portions
16A and a plurality of upper wiring portions 16B connecting the plurality of upper electrode
portions 16A. The capacitor 60 is connected in series to the upper electrode layer 16.
[0029]
In the element 20, since the upper electrode layer 16 close to the outer surface is at the ground
potential, the upper electrode layer 16 has higher safety than the element at the driving
potential.
[0030]
<Circuit of Ultrasonic Endoscope System> FIG. 7 is a circuit diagram of the ultrasonic endoscope
system 1 including the element 20. As shown in FIG.
In the circuit diagram, only one element selected by the changeover switch 3B is shown. Then,
the sum of the capacitances of the plurality of cells 10 constituting each element 20, in other
words, the capacitance between the upper electrode layer 16 and the lower electrode layer 12 is
C0 (F), and the capacitance of the capacitor 60 is C1 ( It is shown in F).
[0031]
In the element 20, a capacitor 60, which is a current interrupting portion, is connected in series
to the upper electrode layer 16. Capacitor 60 does not conduct DC current, but does conduct DC
voltage. That is, the capacitor 60 cuts off only the direct current. Therefore, even though the
capacitor 60 is interposed, the upper electrode layer 16 functions as a ground potential
electrode.
[0032]
Then, in the ultrasonic endoscope system 1, even if the lower electrode layer 12 and the upper
electrode layer 16 are short-circuited due to a failure or the like, the capacitor 60 for
interrupting the direct current is the one between the upper electrode layer 16 and the ultrasonic
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9
diagnostic device 3. Because of the series connection, no DC current flows in the upper electrode
layer 16. That is, the capacitor 60 is a short circuit avoiding structure in which both ends are
galvanically isolated.
[0033]
Strictly speaking, when a short circuit occurs, a current flows in the upper electrode layer 16
until the capacitor 60 is charged. However, since the power is small, the ultrasonic observation
device 3 is not significantly affected.
[0034]
For this reason, in the ultrasound endoscope system 1 including the element 20, there is no
possibility that the ultrasound observation apparatus 3 may break down or the operation may
become unstable.
[0035]
Here, the combined capacitance C of the capacitor shown in FIG. 7 is expressed by (Expression
1).
1 / C = 1 / C0 + 1 / C1 (equation 1)
[0036]
As apparent from (Expression 1), in the case of the capacitor 60 having a capacitance C1
sufficiently larger than the capacitance C0, the combined capacitance C becomes approximately
equal to the capacitance C0. Therefore, the capacitance C1 of the capacitor 60 is preferably
larger than the capacitance C0 of the lower electrode layer 12 and the upper electrode layer 16,
and particularly preferably, the capacitance C1 is 3 times to 100 times the capacitance C0. If it is
more than the said range, since the capacity | capacitance C0 of the element 20 acts dominantly
at the time of ultrasound transmission / reception in the ultrasound endoscope system 1, there is
no deterioration of reception sensitivity. Moreover, if it is below the said range, the fall of a
reception resolution or the fall of a transmittable frequency will be below the level which does
04-05-2019
10
not become a problem.
[0037]
The current interrupting unit is not limited to the capacitor as long as it is an electronic
component that interrupts direct current.
[0038]
<Modification of First Embodiment> In the element 20A and the ultrasonic endoscope system 1A
of the first modification of the first embodiment shown in FIG. 8, the condenser 60 is in series
with the lower electrode layer 12 of each element 20. It is connected.
[0039]
The capacitor 60 cuts off the direct current but conducts the direct current voltage.
That is, when a DC voltage is applied to the conducting wire 81A, the DC voltage is applied to the
lower electrode layer 12 even though the capacitor 60 is interposed.
Then, in the ultrasonic endoscope system 1A, even if the lower electrode layer 12 and the upper
electrode layer 16 are short-circuited due to a failure or the like, the capacitor 60 for
interrupting the direct current is the one of the lower electrode layer 12 and the ultrasonic
diagnostic device 3 Because of the series connection, no DC current flows in the upper electrode
layer 16.
[0040]
That is, the element 20A and the ultrasound endoscope system 1A have the same effect as the
element 20 and the ultrasound endoscope system 1.
[0041]
Next, in the element 20B and the ultrasonic endoscope system 1B according to the second
modification of the first embodiment shown in FIG. 9, each element 20B is connected in series to
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11
the lower electrode layer 12 and has a capacitor 60A of a capacity CA. And a capacitor 60 B of a
capacitor CB connected in series with the upper electrode layer 16.
そして、C0<CA、C0<CBである。
[0042]
The combined capacitance C of the capacitor shown in FIG. 9 is represented by (Expression 2). 1
/ C = 1 / C0 + 1 / CA + 1 / CB (Equation 2)
[0043]
As apparent from (Expression 2), if the capacitors 60A and 60B have a sufficiently large
capacitance with respect to the capacitance C0, the combined capacitance C becomes almost
equal to the capacitance C0. Therefore, the capacitance CA of the capacitor 60A and the
capacitance CB of the capacitor 60B are preferably larger than the capacitance C0 of the lower
electrode layer 12 and the upper electrode layer 16, and particularly preferably, the capacitances
CA and CB are three times the capacitance C0 That is more than 100 times. If it is in the said
range, performance does not deteriorate the element 20B and the ultrasound endoscope system
1B.
[0044]
The element 20B has the same effect as the element 20A and further blocks DC current on both
the ground potential side and the drive potential side, so that DC current can be more reliably
prevented from flowing in the upper electrode layer 16 .
[0045]
As described above, in the ultrasonic element of the embodiment, the capacitor serving as the
current interrupting portion may be connected in series to at least one of the lower electrode
layer 12 and the upper electrode layer 16.
[0046]
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12
Second Embodiment Next, an element 20C of a second embodiment will be described.
The element 20C is similar to the element 20 and so the same components are denoted by the
same reference numerals and the description thereof will be omitted.
As described below, in the element 20C, each cell 10C has the external electrodes 26A and 26B,
but the external electrodes 26A and 26B may be provided for each element.
[0047]
As shown in FIG. 10, the element 20C includes a lower electrode 61 extended from the lower
wiring portion 12B of the element 20C and an upper electrode 62 manufactured simultaneously
with the upper electrode layer 16. The lower electrode 61 and the upper electrode 62 form a
parallel plate type capacitor 60C oppositely disposed with the lower insulating layer 13 and the
upper insulating layer 15 interposed therebetween. That is, the capacitor 60C is an element builtin capacitor integrally formed with the cell 10C.
[0048]
The capacitor 60C has the same function as the capacitor 60A of the element 20A. The external
electrode 26 B at the ground potential is connected to the upper electrode layer 16 through the
interlayer wiring 19. The external electrode 26 A to which a DC voltage is applied is connected to
the upper electrode 62 through the interlayer wiring 18. Therefore, the circuit diagram of the
element 20C is substantially the same as the circuit diagram of the element 20A shown in FIG.
The element 20C has the same effect as the element 20A.
[0049]
The capacitance of the capacitor 60C of the element 20C is preferably larger than the
capacitance C0 of the lower electrode layer 12 and the upper electrode layer 16 similarly to the
capacitance of the capacitor 60 etc., and particularly preferably 3 to 100 times the capacitance
C0. It is below.
04-05-2019
13
[0050]
In order to increase the capacity of the capacitor 60C, a high dielectric constant layer made of,
for example, BST (barium strontium titanate) may be disposed between the lower electrode 61
and the upper electrode 62.
[0051]
Here, a method of manufacturing the cell 10C of the element 20C will be described with
reference to FIGS. 11 (A) to 11 (E).
As shown in FIG. 11A, the insulating layer 11A is formed on the surface of the conductive silicon
substrate 11.
The insulating layer 11A is made of silicon oxide, silicon nitride or the like, and has a thickness of
1 μm or more.
[0052]
Next, a conductive material is formed on the insulating layer 11A by sputtering or the like, and
then a resist mask in the shape of the lower electrode layer 12 is provided by photolithography,
and the resist mask is removed after etching. The electrode layer 12 is produced. The lower
electrode layer 12 is made of molybdenum, tungsten, titanium, aluminum or the like, and has a
thickness of 0.2 μm to 0.5 μm. The lower electrode layer 12 has a lower electrode 61 of a
capacitor 60C extended from the lower electrode portion 12A through the lower wiring portion
12B. That is, the lower electrode 61 is also manufactured simultaneously with the manufacture
of the lower electrode portion 12A and the lower wiring portion 12B.
[0053]
As shown in FIG. 11B, the lower insulating layer 13 is formed on the insulating layer 11A and the
lower electrode layer 12. The lower insulating layer 13 is made of silicon nitride, silicon oxide or
the like, and has a thickness of 0.1 μm to 0.2 μm.
04-05-2019
14
[0054]
Next, after forming a sacrificial layer material on the lower insulating layer 13, a resist mask in
the shape of the cavity 14 is disposed by photolithography, and the resist mask is removed after
the etching process, thereby forming the sacrificial layer 14X. Be done. The sacrificial layer
material is selected from materials which can be selectively removed from the lower insulating
layer 13 and the upper insulating layer 15 by etching. The thickness of the sacrificial layer 14X,
that is, the height of the cavity 14 is 0.1 μm to 0.3 μm.
[0055]
As shown in FIG. 11C, the upper insulating layer 15 is formed to cover the sacrificial layer 14X.
The upper insulating layer 15 having a thickness of 0.3 μm to 0.7 μm is made of, for example,
silicon nitride having a tensile stress of 400 MPa or less.
[0056]
Next, etching holes (not shown) are formed in the upper insulating layer 15 for the etchant to
flow into the sacrificial layer 14X. Then, the sacrificial layer 14X is selectively etched to form a
hollow cavity 14.
[0057]
For selective etching of the sacrificial layer 14X, for example, when silicon oxide (SiO 2) is used
as the sacrificial layer 14X and silicon nitride (SiN) is used as the lower insulating layer 13 and
the upper insulating layer 15, buffered as an etching agent Use hydrofluoric acid (BHF). When
conductive polycrystalline silicon is used as the sacrificial layer 14X and SiN is used as the lower
insulating layer 13 and the upper insulating layer 15, xenon fluoride gas (XeF2) is used as the
etching agent.
[0058]
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15
Next, the upper electrode layer 16 is manufactured by substantially the same method as the
lower electrode layer 12. The thickness of the upper electrode layer 16 is 0.3 μm to 1 μm. A
titanium nitride layer may be further formed on the upper electrode layer 16. Then,
simultaneously with the fabrication of the upper electrode portion 16A and the upper wiring
portion 16B, the upper electrode 62 of the capacitor 60C is also fabricated.
[0059]
As shown in FIG. 11D, a protective layer 17 is formed to cover the upper electrode layer 16 and
the upper electrode 62. The protective layer 17 is an insulating layer formed by the same
method and the same material as the upper insulating layer 15. The protective layer 17 may
have a two-layer structure in which a biocompatible outer layer such as polyparaxylylene is
further formed on an insulating layer made of SiN or the like. The thickness of the protective
layer 17 is 0.2 μm to 1.5 μm.
[0060]
Finally, as shown in FIG. 11E, via holes formed in the protective layer 17 are filled with a
conductor to form interlayer wirings 18 and 19. Then, an external electrode 26A connected with
the upper electrode 62 via the interlayer wiring 18 and an external electrode 26B connected with
the upper wiring portion 16B via the interlayer wiring 19 are provided. The external electrodes
26A, 26B are, for example, gold pads.
[0061]
The element 20C manufactured by the above process has a capacitor 60C integrally formed with
the cell 10C.
[0062]
Element 20C is simpler to manufacture than element 20A, as it has the same effect as element
20A and does not require additional capacitors 60 to be mounted.
[0063]
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16
Modification of Second Embodiment Similar to the element 20C, in the element of the
modification of the second embodiment, at least one of the electrode layers of the capacitor
formed of the electrode layers facing each other through the insulating layer is the lower
electrode layer 12 Alternatively, it is produced simultaneously with the production of the upper
electrode layer 16.
In the cell 10D of the element 20D of the first modification of the second embodiment shown in
FIG. 12, the lower electrode 61D and the outer electrode 26A form a parallel plate capacitor 60D.
The lower electrode 61D is manufactured simultaneously with the upper electrode layer 16.
[0064]
The lower electrode 61D is connected to the lower electrode layer 12 through the interlayer
wiring 18D. Therefore, the circuit diagram of the element 20D is substantially the same as the
circuit diagram of the element 20A shown in FIG.
[0065]
In the cell 10E of the element 20E of the modification 2 of the second embodiment shown in FIG.
13, the conductive silicon substrate 11 and the lower electrode layer 12 form a parallel plate
type capacitor 60E.
[0066]
The external electrode 26A is connected to the silicon substrate 11 through the interlayer wiring
18E.
Therefore, the circuit diagram of the element 20E is substantially the same as the circuit diagram
of the element 20A shown in FIG.
04-05-2019
17
[0067]
The cell 10F of the element 20F of the third modification of the second embodiment shown in
FIG. 14 has the lower electrode 65 on the insulating layer 11A of the silicon substrate 11 and the
insulating layer 66 covering the lower electrode 65. The lower electrode layer 12 is fabricated on
the insulating layer 66. In the cell 10F, the lower electrode 65 and the lower electrode layer 12
form a parallel plate capacitor 60F.
[0068]
The lower electrode 65 is connected to the external electrode 26A through the interlayer wiring
18F. Therefore, the circuit diagram of the element 20F is substantially the same as the circuit
diagram of the element 20A shown in FIG.
[0069]
In the cell 10G of the element 20G of the fourth modification of the second embodiment shown
in FIG. 15, the lower electrode 61G extended from the upper wiring portion 16B and the external
electrode 26B form a parallel plate type capacitor 60G. doing. The lower electrode 61G is
manufactured simultaneously with the upper electrode portion 16A and the upper wiring portion
16B.
[0070]
The lower electrode layer 12 is connected to the external electrode 26A through the interlayer
wiring 18G. Therefore, the circuit diagram of the element 20F is substantially the same as the
circuit diagram of the element 20 shown in FIG.
[0071]
In an element 20H of the fifth modification of the second embodiment shown in FIG. 16, the cell
10H is a parallel plate type capacitor 60HB having a lower electrode 61G extended from the
upper wiring portion 16B and an outer electrode 26B. Further, an upper electrode 62H
manufactured simultaneously with the upper electrode layer 16 and a lower electrode 61H
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18
extended from the lower wiring portion 12B form a parallel plate type capacitor 60HA.
[0072]
The upper electrode 62H is connected to the external electrode 26A through the interlayer
wiring 18H.
Therefore, the circuit diagram of the element 20H is substantially the same as the circuit diagram
of the element 20B shown in FIG.
[0073]
The capacitors 60D to 60HB of the elements 20D to 20H have the same function as the capacitor
60C or the like of the element 20C. Therefore, the elements 20D to 20H have the same effect as
the element 20C and the like.
[0074]
In the elements 20D to 20H, the capacitances of the capacitors 60D to 60HB are preferably
larger than the capacitance C0 of the lower electrode layer 12 and the upper electrode layer 16
similarly to the capacitance of the capacitor 60 etc., and particularly preferably It is three times
or more and 100 times or less of C0.
[0075]
Third Embodiment Next, an ultrasound endoscope system 1J according to a third embodiment
will be described.
The ultrasound endoscope system 1J is similar to the ultrasound endoscope system 1, so the
same components are denoted by the same reference numerals and the description thereof will
be omitted.
04-05-2019
19
[0076]
As shown in FIG. 17, the ultrasonic endoscope system 1J includes a condenser 60J which is a
current interrupting unit in which the ultrasonic observation device 3J is connected in series to
the lower electrode layer 12.
[0077]
That is, the capacitor 60J is disposed in series between the power supply 3A of the ultrasonic
observation apparatus 3J and the changeover switch 3B.
A condenser is not provided in the ultrasonic element 20J of the ultrasonic endoscope 2J.
However, the circuit diagram of the ultrasonic endoscope system 1J is substantially the same as
the ultrasonic endoscope system 1A shown in FIG.
[0078]
The capacitor 60J has the same function as the capacitor 60A of the element 20A. Therefore, the
ultrasound endoscope system 1J has the same effect as the ultrasound endoscope system 1A
including the element 20A. Furthermore, in the ultrasound endoscope system 1J, since only one
condenser 60J needs to be provided in the ultrasound observation apparatus 3J, the manufacture
is easy. Furthermore, since the ultrasonic endoscope 2J in which the current blocking unit is not
provided can be used, the ultrasonic endoscope system 1J has high versatility.
[0079]
A plurality of capacitors having a current blocking function may be arranged in series in the
endoscope or the ultrasonic observation apparatus between the changeover switch 3B and the
ultrasonic element 20J. That is, an ultrasonic probe system having a current interrupting unit for
interrupting a direct current connected in series with at least one of the lower electrode layer 12
or the upper electrode layer 16 but not interrupting a direct current voltage is used. , And the
same effect as the ultrasound endoscope system 1A.
[0080]
04-05-2019
20
Furthermore, the elements of the embodiment and the modification can be used not only in the
ultrasound endoscope shown in FIG. 3 but also in IVUS (Intra Vascular Ultrasound), a capsule
ultrasound endoscope, and the like. Moreover, although the element of the radial type ultrasound
unit was demonstrated to the example, the element of embodiment can also be used for a convex
type ultrasound unit. Furthermore, the element of the embodiment can also be used for an
ultrasound probe and an ultrasound probe system that do not have an imaging unit such as a
CCD.
[0081]
That is, the present invention is not limited to the above-described embodiment or modification,
and various changes, modifications, combinations, and the like can be made without departing
from the scope of the present invention.
[0082]
1, 1A to 1J: ultrasound endoscope system, 2, 2J: ultrasound endoscope, 3, 3J: ultrasound
observation apparatus, 3A: power supply, 3B: changeover switch, 3C: capacitance detection unit,
3D: control Section, 3J: Ultrasonic observation device, 4: Monitor, 10, 10C to 10H: Cell, 11:
silicon substrate, 11A: insulating layer, 12: lower electrode layer, 13: lower insulating layer, 14:
cavity, 14X: sacrificial Layers 15 upper insulating layer 16 upper electrode layer 17 protective
layer 18, 19 interlayer wiring 20 20A to 20 J ultrasonic element 21 transmission / reception unit
26A 26B external electrode 30 Ultrasonic unit, 60, 60A to 60J: capacitor, 61: lower electrode, 62:
upper electrode, 64: fuse, 65: lower electrode, 66: insulating layer, 80: cable, 81A, 81B:
conductive wire
04-05-2019
21
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