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JP2014103652

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DESCRIPTION JP2014103652
Abstract: The present invention provides an acoustic chip in which a carbon nanotube film of a
loudspeaker is not easily broken and which is convenient to use, and an acoustic chip having a
simple structure and easy to realize production, miniaturization and industrialization. Provide an
apparatus. An acoustic chip according to the present invention includes a loudspeaker and a
housing, the loudspeaker comprising a first substrate, an acoustic wave generator, at least one
first electrode, and at least one second electrode. And wherein the first substrate comprises the
first surface, the acoustic wave generator is mounted on the first surface of the first substrate,
and the at least one first electrode and the at least one second electrode are spaced apart from
one another Installed and electrically connected to the sound generator, the housing has a space,
and the loudspeaker is accommodated in the space. [Selected figure] Figure 1
Acoustic chip and acoustic device
[0001]
The present invention relates to an acoustic chip and an acoustic device, and more particularly to
a thermoacoustic chip and a thermoacoustic device.
[0002]
In general, a loudspeaker comprises a signal device and a sound generator.
The signaling device transmits the signal to the sound generator. The thermoacoustic device is a
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type of acoustic device utilizing a thermoacoustic phenomenon, and when an alternating current
flows through a conductor, a sound is generated due to heat. Specifically, heat is generated in the
thermoacoustic apparatus, propagated to the surrounding medium, and the thermal expansion
generated by the propagated heat changes the density of the surrounding medium to generate an
acoustic wave.
[0003]
Referring to Non-Patent Document 1, in a thermoacoustic apparatus, a carbon nanotube film is
used as a sound wave generator. Since this carbon nanotube film has a large specific surface area
and a small heat capacity per unit area (less than 2 × 10 <-4> J / cm <2> · K), the acoustic wave
generated by the thermoacoustic device is strong, and heat The acoustic frequency is also wide
(100 Hz to 100 kHz).
[0004]
However, since the sound wave generator in Non-Patent Document 1 converts electrical energy
into heat and heats air to generate sound, this principle is distinguished from the principle of
generating sound like a conventional rattan, There is a need to design an additional large drive
path for the thermoacoustic device. Therefore, the structure of the thermoacoustic apparatus
becomes complicated, the use of the thermoacoustic apparatus becomes inconvenient, and the
miniaturization becomes disadvantageous. In addition, a carbon nanotube film used for a sound
wave generator of a loudspeaker is easily broken by an external force, which affects the service
life of the thermoacoustic device.
[0005]
Chinese Patent Application Publication No. 101239712 Specification Japanese Patent Laid-Open
No. 2004-107196 Japanese Patent Laid-Open No. 2006-161563
[0006]
Lin Xiao et
al.,“Flexible,Stretchable,Transparent Carbon
Nanotube Thin Film Loudspeakers”,Nano
Letters,Vol.8(12),p.4539−4545
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2
[0007]
In order to solve the above-mentioned problems, the present invention provides an acoustic chip
in which a carbon nanotube film of a loudspeaker is not easily broken and which is convenient to
use, and has a simple structure, and can be manufactured, miniaturized and industrialized. To
provide a thermoacoustic device that is easy to realize.
[0008]
The acoustic chip of the invention comprises a loudspeaker and a housing, the loudspeaker
comprising a first substrate, an acoustic wave generator, at least one first electrode and at least
one second electrode, The first substrate has a first surface, the sound wave generator is
disposed on the first surface of the first substrate, and the at least one first electrode and the at
least one second electrode are spaced apart from each other Electrically connected to the sound
wave generator, the housing has a space, the loudspeaker is accommodated in the space, the
housing has at least one aperture, the sound wave generator has at least one open Located
opposite the hole, the housing has at least two pins by which the housing is electrically
connected with the at least one first electrode and the at least one second electrode.
[0009]
The acoustic chip according to claim 1, wherein a plurality of protrusions and a plurality of
recesses are formed on the first surface of the substrate, and the depth of the recesses is 100
μm to 200 μm.
[0010]
The acoustic device of the present invention includes an acoustic chip, an integrated circuit chip,
and a printed circuit board, the acoustic chip is mounted on the printed circuit board, the
integrated circuit chip is mounted on the printed circuit board, and the acoustic signal is
transmitted by the printed circuit board. The chip and the integrated circuit chip are electrically
connected.
[0011]
Compared with the prior art, the acoustic chip and the acoustic device of the present invention
have the following advantages.
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First, since the loudspeaker is accommodated in the space, the carbon nanotube structure of the
loudspeaker can be protected, so that the carbon nanotube structure is not broken by external
force.
Second, the pins allow the acoustic device to be connected to external circuitry, which is
convenient for use and can be applied to the circuit board of conventional electronic
components.
Third, the integrated circuit chip is mounted on a printed circuit board, by means of which the
loudspeaker is mounted on the printed circuit board.
At this time, the loudspeaker and the integrated circuit chip are electrically connected by the
printed circuit board.
Thereby, the acoustic device is convenient to use because the structure is simplified and the
miniaturization can be realized.
[0012]
It is a block diagram of the acoustic chip in Example 1 of this invention.
It is a scanning electron micrograph of the carbon nanotube film in the acoustic chip of Example
1 of this invention. It is a scanning electron micrograph of the non-twisted carbon nanotube wire
utilized in Example 1 of this invention. It is a scanning electron micrograph of the twisted carbon
nanotube wire utilized in Example 1 of this invention. It is a block diagram of the acoustic chip in
Example 2 of this invention. It is a block diagram of the acoustic chip in Example 3 of this
invention. It is a block diagram of the acoustic chip in Example 4 of this invention. It is a block
diagram of the acoustic chip in Example 5 of this invention. It is a block diagram of the acoustic
chip in Example 6 of this invention. It is a block diagram of the acoustic chip in Example 7 of this
invention. It is a block diagram of the acoustic chip in Example 8 of this invention. It is a block
diagram of the acoustic chip in Example 9 of this invention. It is a block diagram of the acoustic
chip in Example 10 of this invention. It is a top view of the loudspeaker in Example 10 of this
invention. It is an optical microscope photograph of the carbon nanotube wire after the process
by the organic solvent in Example 10 of this invention. It is an effect figure of the generation |
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occurrence | production of the sound of the acoustic chip in Example 10 of this invention which
is an optical microscope photograph of the loudspeaker in Example 10 of this invention. It is a
curve figure of the sound pressure level-frequency of the acoustic chip in Example 10 of this
invention. It is a block diagram of the acoustic device in Example 11 of this invention. It is a block
diagram of the acoustic device in Example 12 of this invention. It is a block diagram of the
acoustic device in Example 13 of this invention. It is a block diagram of the acoustic device in
Example 14 of this invention. It is a block diagram of the acoustic device in Example 15 of this
invention. It is a block diagram of the acoustic device in Example 16 of this invention.
[0013]
Hereinafter, embodiments of the present invention will be described with reference to the
drawings.
[0014]
First Embodiment Referring to FIG. 1, an acoustic chip 10A of the present embodiment includes a
loudspeaker 100 and a housing 200.
The housing 200 has a space, and the loudspeaker 100 is accommodated in this space.
[0015]
The loudspeaker 100 includes a first substrate 102, a first electrode 104, a second electrode
106, and an acoustic wave generator 108. The first substrate 102 has opposing first surfaces
101 and second surfaces 103. The first electrode 104 and the second electrode 106 are spaced
apart from each other, and electrically connected to the sound wave generator 108. When the
first substrate 102 is an insulating substrate, the first electrode 104 and the second electrode
106 are directly disposed on the first surface 101 of the first substrate 102. Also, the sound
wave generator 108 may be placed in contact with the first surface 101 of the first substrate
102. Alternatively, the sound wave generator 108 may be suspended by the first electrode 104
and the second electrode 106.
[0016]
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The shape of the first substrate 102 is not limited, and may be circular, square, rectangular or
any other shape. The first surface 101 and the second surface 103 of the first substrate 102 are
flat or curved. The size of the first substrate 102 is not limited and can be selected as needed, but
preferably, the area of the first substrate 102 is 25 mm <2> to 100 mm <2>. Specifically, the area
of the first substrate 102 is 40 mm <2>, 60 mm <2> or 80 mm <2>. The thickness of the first
substrate 102 is 0.2 mm to 0.8 mm. Thus, a micro-sized acoustic chip can be manufactured, and
miniaturization of electronic components (for example, mobile phones, computers, earphones,
etc.) can be realized.
[0017]
Further, the material of the first substrate 102 is not limited either, as long as it is a hard
material or a soft material having a specific strength. In this embodiment, the resistance of the
material of the first substrate 102 is greater than the resistance of the acoustic wave generator
108. In addition, since the material of the first substrate 102 has excellent thermal insulation,
when the sound generator 108 is installed in contact with the first surface 101 of the first
substrate 102, the sound generator 108 is generated. Heat can be prevented from being
absorbed by the first substrate 102. The material of the first substrate 102 is glass, ceramic,
quartz, diamond, polymer, silicon oxide, metal oxide or wood based material. Specifically, in the
present embodiment, the first substrate 102 is a square having a side length of 8 mm, a thickness
of 0.6 mm, and the material is glass. The first surface 101 of the first substrate 102 is a flat
surface.
[0018]
The sound wave generator 108 has a very low heat capacity per unit area. In the present
embodiment, the heat capacity per unit area of the sound wave generator 108 is smaller than 2
× 10 <−4> J / cm <2> · K. Specifically, the sound wave generator 108 is a conductive structure
and has a large specific surface area and a small thickness. This allows the sound generator 108
to convert the input electrical energy into heat and to quickly exchange heat with the
surrounding media. Moreover, it is preferable that the sound wave generator 108 is a selfsupporting structure. Here, the free standing structure is a structure that can be used without
using a support. That is, the sound wave generator 108 does not utilize the support, but retains
its specific shape. Thereby, the sound wave generator 108 can be installed by suspending a part
of the sound wave generator 108, and can be in sufficient contact with the surrounding medium
and can transmit heat. Here, the surrounding medium is a medium present outside the sound
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wave generator 108, and not a medium present inside the sound wave generator 108. For
example, if the sound wave generator 108 consists only of a plurality of carbon nanotubes, the
media around it does not include the media present in each carbon nanotube.
[0019]
In the present embodiment, the sound wave generator 108 includes a carbon nanotube structure,
and preferably comprises only the carbon nanotube structure. Specifically, the carbon nanotube
structure is a layered structure. The thickness of this layered carbon nanotube structure is
preferably 0.5 nm to 1 mm. When the thickness of the carbon nanotube structure is thin, for
example, 10 nm or less, the transparency of the carbon nanotube structure is excellent. The
carbon nanotube structure has a specific shape because the carbon nanotube structure is a
freestanding structure and a plurality of carbon nanotubes in the carbon nanotube structure are
interconnected by an intermolecular force. Thus, a portion of the carbon nanotube structure may
be supported by the first substrate 102, and the other portion may be suspended. That is, at least
a portion of the carbon nanotube structure is suspended and installed.
[0020]
The carbon nanotube structure contains at least a carbon nanotube film, a carbon nanotube wire,
or a combination thereof, and preferably consists of only carbon nanotubes. The carbon
nanotube film is obtained by stretching directly from the carbon nanotube array. The thickness
of the carbon nanotube film is 0.5 nm to 100 μm, and the heat capacity per unit area of the
carbon nanotube film is smaller than 1 × 10 <-6> J / cm <2> · K. The carbon nanotubes are one
or more types of single-walled carbon nanotubes, double-walled carbon nanotubes, and multiwalled carbon nanotubes. The diameter of single-walled carbon nanotubes is 0.5 nm to 50 nm,
the diameter of double-walled carbon nanotubes is 1 nm to 50 nm, and the diameter of multiwalled carbon nanotubes is 1.5 nm to 50 nm. The length of the carbon nanotube film is not
limited, and the width can be selected according to the width of the carbon nanotube array.
[0021]
Referring to FIG. 2, the carbon nanotube film is a freestanding structure composed of a plurality
of carbon nanotubes, and the plurality of carbon nanotubes are arranged along the same
direction. The extending direction of the plurality of carbon nanotubes is basically parallel to the
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surface of the carbon nanotube film. Also, the plurality of carbon nanotubes are connected by
intermolecular force. Specifically, in each carbon nanotube in the plurality of carbon nanotubes,
the adjacent carbon nanotube in the extending direction is connected to the end by an
intermolecular force. Carbon nanotube films also contain a small number of random carbon
nanotubes. However, since most of the carbon nanotubes are arranged along the same direction,
the stretching direction of this random carbon nanotube does not affect the stretching direction
of most of the carbon nanotubes.
[0022]
The carbon nanotube film has a free standing structure. Here, a self-supporting structure is a
form which can utilize a carbon nanotube film independently, without utilizing a support body.
That is, it means that the carbon nanotube film can be suspended by supporting the carbon
nanotube film from opposite sides without changing the structure of the carbon nanotube film.
The carbon nanotubes in the carbon nanotube film have a self-supporting structure realized by
intermolecular force connecting the ends to the ends and arranging them. Specifically, the large
number of carbon nanotubes in the carbon nanotube film may be slightly curved in principle, not
absolutely linear. Alternatively, the stretching directions may not be completely aligned but may
be slightly offset. Therefore, among a plurality of carbon nanotubes arranged along the same
direction, adjacent carbon nanotubes may be in partial contact with each other.
[0023]
The plurality of carbon nanotubes are parallel to the first surface 101 of the first substrate 102.
When the carbon nanotube structure includes a plurality of carbon nanotube films, and the width
of the plurality of carbon nanotube films is very small, the plurality of carbon nanotube films are
aligned on the first surface 101 of the first substrate 102 on the same surface. Will be installed.
Also, the carbon nanotube structure may comprise multiple carbon nanotube films stacked one
on another, in which case the carbon nanotubes in the adjacent two-walled carbon nanotube film
cross at an angle β and this angle β is 0 ° to 90 °, preferably 90 °. A method for producing
a carbon nanotube film is disclosed in Patent Document 1.
[0024]
In the present embodiment, the sound wave generator 108 is a single-walled carbon nanotube
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film. The single-walled carbon nanotube film is suspended on the first surface 101 of the first
substrate 102 by the first electrode 104 and the second electrode 106. The thickness of the
single-walled carbon nanotube film is 50 nm, and the light transmittance of the single-walled
carbon nanotube film is 67% to 95%. Since the carbon nanotube film has strong adhesion, it can
be directly adhered to the surface of the first electrode 104 and the surface of the second
electrode 106. In addition, the carbon nanotube film can be fixed to the surface of the first
electrode 104 and the surface of the second electrode 106 by an adhesive. The carbon
nanotubes in the carbon nanotube film extend from the first electrode 104 toward the second
electrode 106.
[0025]
Furthermore, after the carbon nanotube film is directly bonded to the surface of the first
electrode 104 and the surface of the second electrode 106, the carbon nanotube film is treated
with an organic solvent. Specifically, a test tube is used to drip the organic solvent until the
carbon nanotube film is immersed. The organic solvent is a volatile organic solvent, such as
ethanol, methanol, acetone, ethylene chloride or chloroform. In the present example, the organic
solvent is ethanol. As the volatile organic solvent evaporates, microscopically, due to the action of
surface tension, a part of adjacent carbon nanotubes in the carbon nanotube film shrinks into
bundles. In addition, since the adjacent carbon nanotubes in one portion shrink and bundle,
mechanical strength and toughness of the carbon nanotube film are enhanced, surface area of
the carbon nanotube film is decreased, and adhesion is decreased. Macroscopically, carbon
nanotube films have a uniform film structure.
[0026]
The carbon nanotube wire is a non-twisted carbon nanotube wire or a twisted carbon nanotube
wire. The non-twisted carbon nanotube wire and the twisted carbon nanotube wire are
freestanding structures. Referring to FIG. 3, when the carbon nanotube wire is a non-twisted
carbon nanotube wire, the carbon nanotube wire includes a plurality of carbon nanotube
segments (not shown) connected end to end by an intermolecular force. Furthermore, a plurality
of carbon nanotubes of the same length are arranged in parallel in each carbon nanotube
segment. The plurality of carbon nanotubes are arranged parallel to the central axis of the carbon
nanotube wire. The length, thickness, uniformity and shape of the carbon nanotube segments are
not limited. The length of the non-twisted carbon nanotube wire is not limited, and its diameter is
0.5 nm to 100 μm. The carbon nanotube film of FIG. 2 is treated with an organic solvent to
obtain a non-twisted carbon nanotube wire. Specifically, the entire surface of the carbon
05-05-2019
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nanotube film is soaked with an organic solvent. Thereafter, when the volatile organic solvent
evaporates, the surface tension causes the plurality of mutually parallel carbon nanotubes in the
carbon nanotube film to be closely coupled with each other by the intermolecular force, thereby
shrinking the carbon nanotube film and causing the carbon nanotube film to shrink. Form a
twisted carbon nanotube wire. The organic solvent is ethanol, methanol, acetone, ethylene
chloride or chloroform. Compared to carbon nanotube films not treated with this organic solvent,
non-twisted carbon nanotube wires treated with an organic solvent have a reduced specific
surface area and smaller adhesion. In addition, the mechanical strength and toughness of the
carbon nanotube wire are enhanced, and the possibility of the carbon nanotube wire being
broken by an external force is reduced.
[0027]
Referring to FIG. 4, a twisted carbon nanotube wire can be formed by applying opposing forces
to opposite ends along the longitudinal direction of the carbon nanotube film of FIG. The twisted
carbon nanotube wire preferably includes a plurality of carbon nanotube segments (not shown)
connected end to end by intermolecular force. In each carbon nanotube segment, a plurality of
carbon nanotubes of the same length are arranged in parallel. The length, thickness, uniformity
and shape of the carbon nanotube segments are not limited. The length of one twisted carbon
nanotube wire is not limited, and its diameter is 0.5 nm to 100 μm. Further, the twisted carbon
nanotube wire is treated with an organic solvent. The twisted carbon nanotube wire treated with
the organic solvent has a reduced specific surface area and a small adhesion, while the
mechanical strength and toughness of the carbon nanotube wire are enhanced. Methods of
making carbon nanotube wires are described in US Pat.
[0028]
The first electrode 104 and the second electrode 106 are respectively electrically connected to
the sound wave generator 108, and the frequency electric signal is input to the sound wave
generator 108 by the first electrode 104 and the second electrode 106. The first electrode 104
and the second electrode 106 may be disposed directly on the first surface of the first substrate
102. Alternatively, the first electrode 104 and the second electrode 106 may be disposed on the
first surface of the first substrate 102 using a support element. The first electrode 104 and the
second electrode 106 are made of a conductive material, and their shape and structure are not
limited. Specifically, the first electrode 104 and the second electrode 106 may be elongated striplike, rod-like or other shape, and the material is metal, conductive polymer, conductive adhesive,
conductive paste, conductive slurry, metallic Conductive materials such as carbon nanotubes and
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ITO. Since carbon nanotubes have excellent conductivity in the axial direction, when the carbon
nanotubes are arranged along the same direction, the carbon nanotubes extend along the
direction from the first electrode 104 to the second electrode 106 Is preferred. In the present
embodiment, the first electrode 104 and the second electrode 106 are two conductive slurry
layers disposed in parallel.
[0029]
In the loudspeaker 100, since the carbon nanotube structure included in the sound wave
generator 108 is protected by the housing 200, the carbon nanotube structure is not broken by
the external force. The size and shape of the housing 200 are not limited and can be selected as
needed. The housing 200 has at least one aperture 210 which allows the sound generated by the
loudspeaker 100 to be transmitted to the outside of the housing 200. The sound wave generator
108 is preferably disposed between the first substrate 102 and the aperture 210 and opposite
the at least one aperture 210. In the present embodiment, the housing 200 includes a second
substrate 202 and a protective cover 204. The protective cover 204 is disposed on the surface of
the second substrate 202. The loudspeaker 100 is mounted on the surface of the second
substrate 202, and the protective cover 204 covers the loudspeaker 100. That is, the second
substrate 202 and the protective cover 204 form a space, and the loudspeaker 100 is
accommodated in the space.
[0030]
The second substrate 202 is a glass plate, a ceramic plate, a printed circuit board (PCB), a
polymer plate or a wood plate. The second substrate 202 is used to support and secure the
loudspeaker 100. The size and shape of the second substrate 202 are not limited and can be
selected as needed. The area of the second substrate 202 is larger than the size of the
loudspeaker 100. The area of the second substrate 202 is 36 mm <2> to 150 mm <2>, for
example, 49 mm <2>, 64 mm <2>, 81 mm <2>, 100 mm <2>. The thickness of the second
substrate 202 is 0.5 mm to 5 mm, for example, 1 mm, 2 mm, 3 mm, 4 mm. Protective cover 204
includes an annular side wall 206 and a bottom wall 208. The bottom wall 208 has a plurality of
the apertures 210. The size and shape of the protective cover 204 are not limited and can be
selected as needed. The size of the protective cover 204 is slightly larger than the size of the
loudspeaker 100. Also, the protective cover 204 is fixed to the surface of the second substrate
202 by an adhesive or in a removable manner. The material of the protective cover 204 is glass,
ceramic, polymer or metal. In the present embodiment, the second substrate 202 is a printed
circuit board, and the protective cover 204 is a metal bucket type whose one end is opened.
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Protective cover 204 and loudspeaker 100 are spaced apart from one another.
[0031]
The housing 200 has two pins 212, and the two pins 212 are installed outside the housing 200.
There is no limitation on the position of the two pins 212. The two pins 212 are electrically
connected to the first electrode 104 and the second electrode 106, respectively. Also, the two
pins 212 may be a pin grid array (PGA), a surface mount type (SMT) or other shape. When the
two pins 212 are a pin grid array, when installing the acoustic chip 10A in the electronic
component, the two pins 212 are directly inserted into corresponding insertion holes in the
electrical circuit board of the electronic component. When the two pins 212 are surface
mounted, when installing the acoustic chip 10A to the electronic component, the two pins 212
are welded to the surface of the electrical circuit board of the electronic component. In the
present embodiment, the two pins 212 are a pin grid array, and are installed on the bottom
surface of the second substrate 202 opposite to the loudspeaker 100, and by the lead 110 to the
first electrode 104 and the second electrode 106 respectively. Electrically connected.
[0032]
Example 2 Referring to FIG. 5, Example 2 of the present invention provides an acoustic chip 10B.
The acoustic chip 10B of the present embodiment includes a plurality of loudspeakers 100 and a
plurality of housings 200. The plurality of housings 200 have a plurality of spaces, and the
plurality of loudspeakers 100 are respectively accommodated in the plurality of spaces.
[0033]
The structure of the acoustic chip 10B of the second embodiment is basically the same as the
structure of the acoustic chip 10A of the first embodiment, except that the acoustic chip 10B has
one second substrate 202 and a plurality of second chips. It is a point that includes a protective
cover 204 and a plurality of loudspeakers 100. A plurality of loudspeakers 100 are disposed on
the surface of the second substrate 202 and covered by the corresponding protective covers 204.
Further, the housing 200 has a plurality of pins 212, and two pins 212 are provided for each one
of the loudspeakers 100, and are electrically connected to the two electrodes of the
corresponding loudspeakers 100. By controlling the electrical circuit, the plurality of
loudspeakers 100 simultaneously generate sound or generate sound with a specific phase
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difference. When a plurality of loudspeakers 100 are connected in parallel or in series, the
plurality of loudspeakers 100 can share two pins 212.
[0034]
Example 3 Referring to FIG. 6, Example 3 of the present invention provides an acoustic chip 10C.
The acoustic chip 10C of the present embodiment includes a plurality of loudspeakers 100 and a
housing 200. The housing 200 has a space, and a plurality of loudspeakers 100 are
accommodated in this space.
[0035]
The structure of the acoustic chip 10C of the third embodiment and the structure of the acoustic
chip 10A of the first embodiment are basically the same, except that one housing 200
accommodates a plurality of loudspeakers 100. It is. Furthermore, the housing 200 has a
plurality of pins 212, two pins 212 are provided for each loudspeaker 100, and are electrically
connected to the corresponding two electrodes of the loudspeaker 100. By controlling the
electrical circuit, the plurality of loudspeakers 100 simultaneously generate sound or generate
sound with a specific phase difference. When a plurality of loudspeakers 100 are connected in
parallel or in series, the plurality of loudspeakers 100 can share two pins 212.
[0036]
Fourth Embodiment Referring to FIG. 7, a fourth embodiment of the present invention provides
an acoustic chip 20A. The acoustic device 20A of the present embodiment includes a plurality of
loudspeakers 100 and a housing 200. The housing 200 has a space, and a plurality of
loudspeakers 100 are accommodated in this space.
[0037]
The structure of the acoustic chip 20A of the fourth embodiment is basically the same as the
structure of the acoustic chip 10A of the first embodiment, except that the case 200 is different
from the second substrate 202 and the protection net 216. And the second substrate 202 is a
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point having a first recess 214. Specifically, the loudspeaker 100 is installed in the first recess
214 of the second substrate 202, and the protection net 216 covers the first recess 214. The
protective net 216 also has a plurality of apertures 210. The protective net 216 may be a metal
net or a fiber net. Alternatively, it may be a metal plate having a plurality of openings, a ceramic
plate, a resin plate or a glass plate. The protection net 216 is suspended and installed in the first
recess 214. The first recess 214 is manufactured by etching, imprinting, molding, and stamping.
In the present embodiment, the second substrate 202 is a printed circuit board, and the
protection net 216 is a metal net. Also, the housing 200 may have two pins, and the two pins
may be installed on the same side or different sides of the bottom of the second substrate 202.
[0038]
Example 5 Referring to FIG. 8, Example 5 of the present invention provides an acoustic chip 20B.
The acoustic chip 20B of the present embodiment includes a plurality of loudspeakers 100 and a
housing 200. The housing 200 has a space, and a plurality of loudspeakers 100 are
accommodated in this space.
[0039]
The structure of the acoustic chip 20B of the fifth embodiment is basically the same as the
structure of the acoustic chip 20A of the fourth embodiment, except that the second substrate
202 has a plurality of first recesses 214, The plurality of first recesses 214 are installed on the
same surface of the second substrate 202, the loudspeaker 100 is installed in the first recess
214, and one loudspeaker 100 corresponds to one first recess 214. One protective net 216
covers the plurality of first recesses 214. Furthermore, the housing 200 has a plurality of pins
212, and two pins 212 are provided for each loudspeaker 100, and the two pins 212 are
electrically connected to the two electrodes of the corresponding loudspeaker 100. Be done. By
controlling the electrical circuit, the plurality of loudspeakers 100 simultaneously generate
sound or generate sound with a specific phase difference. When a plurality of loudspeakers 100
are connected in parallel or in series, the plurality of loudspeakers 100 can share two pins 212.
[0040]
Example 6 Referring to FIG. 9, Example 6 of the present invention provides an acoustic chip 20C.
The acoustic chip 20C of the present embodiment includes a plurality of loudspeakers 100 and a
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housing 200. The housing 200 has a space, and a plurality of loudspeakers 100 are
accommodated in this space.
[0041]
The structure of the acoustic chip 20C of the sixth embodiment and the structure of the acoustic
chip 20A of the fourth embodiment are basically the same as that of the fourth embodiment
except that a plurality of loudspeakers 100 are installed in one recess 214. It is a point.
Furthermore, the housing 200 has a plurality of pins 212, and two pins 212 are provided for
each loudspeaker 100, and the two pins 212 are electrically connected to the two electrodes of
the corresponding loudspeaker 100. Be done. By controlling the electrical circuit, the plurality of
loudspeakers 100 simultaneously generate sound or generate sound with a specific phase
difference. When a plurality of loudspeakers 100 are connected in parallel or in series, the
plurality of loudspeakers 100 can share two pins 212.
[0042]
Seventh Embodiment Referring to FIG. 10, a seventh embodiment of the present invention
provides an acoustic chip 30A. The acoustic chip 30A of the present embodiment includes a
loudspeaker 100 and a housing 200. The housing 200 has a space, and the loudspeaker 100 is
accommodated in this space.
[0043]
The structure of the acoustic chip 30A of the seventh embodiment is basically the same as the
structure of the acoustic chip 10A of the first embodiment, except that the loudspeaker 100 has
the first electrode 104 and the second electrode 106. And the sound wave generator 108. Also,
the housing 200 has two pins 212, which are surface mounted and are respectively installed on
both sides of the housing 200. Specifically, the first electrode 104 and the second electrode 106
are directly mounted on the surface of the second substrate 202, and the sound wave generator
108 is suspended and mounted by the first electrode 104 and the second electrode 106. . That is,
the loudspeaker 100 can omit the first substrate 102. This further simplifies the structure of the
acoustic device 30A. The second substrate 202 is preferably an insulating substrate.
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15
[0044]
Eighth Embodiment Referring to FIG. 11, an eighth embodiment of the present invention
provides an acoustic chip 30B. The acoustic chip 30B of the present embodiment includes a
loudspeaker 100 and a housing 200. The housing 200 has a space, and the loudspeaker 100 is
accommodated in this space.
[0045]
The structure of the acoustic chip 30B of the eighth embodiment is basically the same as the
structure of the acoustic chip 20A of the fourth embodiment, except that the loudspeaker 100
includes the first electrode 104 and the second electrode 106. And the sound wave generator
108. Also, the housing 200 has two pins 212, which are surface mounted and are respectively
installed on both sides of the housing 200. Specifically, in the present embodiment, the bottom
surface of the recess 214 has one recess, by which the sound wave generator 108 is suspended
and installed. That is, the loudspeaker 100 can omit the first substrate 102. This further
simplifies the structure of the acoustic chip 30B. The second substrate 202 is preferably an
insulating substrate. In the present embodiment, the two pins 212 are attached to the outer
surface of the second substrate 202.
[0046]
Example 9 Referring to FIG. 12, Example 9 of the present invention provides an acoustic chip
40A. The acoustic chip 40A of the present embodiment includes a loudspeaker 100, a housing
200, and a first integrated circuit chip 120. The housing 200 has a space, and the loudspeaker
100 and the first integrated circuit chip 120 are accommodated in the space.
[0047]
The structure of the acoustic chip 40A of the ninth embodiment is basically the same as the
structure of the acoustic chip 20A of the fourth embodiment, except that the acoustic chip 40A
includes the first integrated circuit chip 120, and The first integrated circuit chip 120 is
accommodated in the space. Specifically, the first surface 101 of the first substrate 102 has a
second recess 114, by which the sound wave generator 108 is suspended and installed. A third
05-05-2019
16
recess 116 is formed on the second surface 103 of the first substrate 102, and the first
integrated circuit chip 120 is placed in the third recess 116. The housing 200 has four pins 212,
of which two pins 212 are electrically connected to the first integrated circuit chip 120. Thus, the
driving voltage is provided to the first integrated circuit chip 120. The other two pins 212 are
electrically connected to the first electrode 104 and the second electrode 106 through the first
integrated circuit chip 120 to input a frequency electrical signal to the loudspeaker 100.
[0048]
The position where the first integrated circuit chip 120 is installed is not limited, and is installed
in contact with the substrate, for example, installed on the first surface 101, the second surface
103 or the inside of the first substrate 102 of the first substrate 102. Just do it. The first
integrated circuit chip 120 includes a power amplification circuit (not shown) for the frequency
electrical signal and a DC bias circuit (not shown). The first integrated circuit chip 120 has a
power amplification function and a DC bias function with respect to the frequency electric signal.
As a result, the first integrated circuit chip 120 can increase the frequency electric signal input
and then input it to the sound wave generator 108, and at the same time solve the frequency
multiplication problem of the frequency electric signal by the DC bias. . Also, the first integrated
circuit chip 120 may be a packaged chip or an unpackaged bare chip. The size and shape of the
first integrated circuit chip 120 are not limited. The first integrated circuit chip 120 only realizes
the power amplification action and the DC bias action, so the internal circuit structure is simple
and the area is smaller than 1 cm <2>, for example, 49 mm <2>, 25 mm <2>, 9 mm <2> or even
smaller than 9 mm <2>. Thus, the acoustic device 40A is miniaturized. In the present
embodiment, the first integrated circuit chip 120 is fixed to the second surface 103 of the first
substrate 102 by an adhesive. In addition, the first integrated circuit chip 120 is electrically
connected to the first electrode 104 and the second electrode 106 by two leads 110,
respectively. When the first substrate 102 is an insulating substrate, two holes are formed in the
first substrate 102, and two conducting wires 110 are passed through the two holes. If the first
substrate 102 is a conductive substrate, the lead 110 should be coated with an insulating
material. When the acoustic chip 40A operates, the first integrated circuit chip 120 outputs a
frequency electric signal to the sound wave generator 108, and the sound wave generator 108
intermittently heats the surrounding medium by the outputted frequency electric signal. Thermal
expansion is performed on the surrounding media and heat exchange is performed to generate
sound waves.
[0049]
05-05-2019
17
Example 10 Referring to FIGS. 13 and 14, Example 10 of the present invention provides an
acoustic chip 40B. The acoustic chip 40B of the present embodiment includes a loudspeaker 100,
a housing 200, and a first integrated circuit chip 120. The housing 200 has a space, and the
loudspeaker 100 and the first integrated circuit chip 120 are accommodated in the space.
[0050]
The structure of the acoustic chip 40B of the tenth embodiment is basically the same as the
structure of the acoustic chip 40A of the ninth embodiment, except that the first substrate 102 is
made of silicon, and the first integrated circuit chip 120 is different. However, it is a point which
is directly installed on the first substrate 102 and integrally molded with the first substrate 102
by microelectronic processing. At this time, the first surface 101 of the first substrate 102 has a
plurality of concavo-convex structures 122, and the loudspeaker 100 includes a plurality of first
electrodes 104 and a plurality of second electrodes 106.
[0051]
The first substrate 102 is single crystal silicon or polycrystalline silicon. Since the first substrate
102 is made of silicon, the first integrated circuit chip 120 can be formed directly on the first
substrate 102. That is, circuits, microelectronic elements and the like in the first integrated
circuit chip 120 can be integrated directly on the first substrate 102. The first substrate 102,
which is a carrier of electronic circuits and microelectronic elements, is integrally molded with
the first integrated circuit chip 120. The first integrated circuit chip 120 is electrically connected
to the first electrode 104 and the second electrode 106 by the lead 110. The conducting wire
110 passes through the first substrate 102 along the direction perpendicular to the first surface
101 of the first substrate 102 inside the first substrate 102. In the present embodiment, the first
substrate 102 has a square planar structure, one side of which has a length of 0.8 mm, a
thickness of 0.6 mm, and the material is single crystal silicon.
[0052]
The uneven structure body 122 includes a plurality of protrusions 1220 and a plurality of
recesses 1222, and the plurality of protrusions 1220 and the plurality of recesses 1222 are
alternately formed. A part of the carbon nanotube structure is placed on the surface of the
protrusion 1220, and the other part is placed in a suspended manner via the recess 1222. The
05-05-2019
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plurality of first electrodes 104 and the plurality of second electrodes 106 are alternately
disposed on the surface of the carbon nanotube structure on the surface of the protrusion 1220.
Thus, the carbon nanotube structure is fixed to the first surface 101 of the first substrate 102.
The plurality of first electrodes 104 are electrically connected to form a first comb electrode. The
plurality of second electrodes 106 are electrically connected to form a second comb electrode.
Also, the teeth of the first comb electrode and the teeth of the second comb electrode may be
disposed between the carbon nanotube structure and the protrusion 1220. Referring to FIG. 16,
the teeth of the first comb electrode and the teeth of the second comb electrode are alternately
disposed. By this connection method, the adjacent first electrode 104 and second electrode 106
form one thermoacoustic unit. That is, the sound wave generator 108 comprises a plurality of
thermoacoustic units. Further, the drive voltage of the sound wave generator 108 is lowered by
arranging the plurality of thermoacoustic units in parallel.
[0053]
The plurality of recesses 1222 may be a through groove, a through hole, a blind groove, a blind
hole, or any one or more of them. Further, the plurality of concave portions 1222 are installed by
a uniform distribution method, a distribution method having a specific rule, or a random
distribution method. In the first surface 101, the length of the recess 1222 is shorter than the
side length of the first substrate 102. The depth of the recess 1222 can be selected as needed or
depending on the thickness of the substrate 100. Preferably, the depth of the recess 1222 is 100
μm to 200 μm. In this case, the first substrate 102 can protect the sound wave generator 108
and secure a distance between the first substrate 102 and the sound wave generator 108. The
distance allows the heat generated by the sound generator 108 to be completely absorbed by the
first substrate 102. This prevents the volume being lowered as the generated heat is not
transmitted to the surrounding media, and ensures that the sound generator has an excellent
acoustic effect at each acoustic frequency.
[0054]
The cross-sectional shape in the direction in which the recess 1222 extends is V-shaped,
rectangular, E-shaped, trapezoidal, polygonal, circular or any other irregular shape. The width of
the recess 1222 (that is, the maximum value of the length of the cross section of the recess
1222) is 0.2 mm to 1 mm. In the present embodiment, the recess 1222 is a groove, and its cross
section is an inverted trapezoid. That is, the width of the groove narrows as the groove gets
deeper. The angle formed by the bottom surface and the side surface of the inverted trapezoidal
shape is α, and the magnitude of the angle α is related to the material of the first substrate 102.
05-05-2019
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Specifically, the magnitude of the angle α is the same as the angle of the crystal plane of single
crystal silicon of the first substrate 102. Preferably, the plurality of recesses 1222 are parallel to
one another and uniformly spaced apart from one another. The distance between two adjacent
grooves is d1, which is 20 μm to 200 μm. In the case where the first electrode 104 and the
second electrode 106 are formed on the surface of the first substrate 102 by the screen printing
method, the d1 can ensure that the etching accuracy and the acoustic effect are enhanced. The
extension direction of the recess 1222 is parallel to the extension direction of the first electrode
104 and the second electrode 106.
[0055]
In the present embodiment, the first surface 101 of the first substrate 102 is formed with a
plurality of inverted trapezoidal grooves which are parallel to each other and uniformly spaced
apart from each other. The width of the inverted trapezoidal groove on the first surface 101 is
0.6 mm, its depth is 150 μm, d1 is 100 μm, and the angle α is 54.7 degrees.
[0056]
The first integrated circuit chip 120 is formed on the side adjacent to the second surface 103 of
the first substrate 102. Furthermore, the first integrated circuit chip 120 can be integrated
directly on the silicon substrate. Therefore, by minimizing the space for installing the first
integrated circuit chip 120, the volume of the acoustic device 40B can be reduced. This allows
the acoustic device to be miniaturized and advantageous for integration. In addition, the first
substrate 102 has excellent heat dissipation by the concavo-convex structure 122, rapidly
conducts the heat generated from the first integrated circuit chip 120 and the sound wave
generator 108 to the outside, and further guarantees the thermoacoustic effect. can do.
[0057]
In the method of manufacturing the loudspeaker 100 of the acoustic chip 40B, first, the first
integrated circuit chip 120 is integrated on the substrate by the microelectronic processing
method. Next, the uneven structure body 122 is etched. Finally, after the carbon nanotube
structure is installed on the uneven structure body 122, the first electrode 104 and the second
electrode 106 are installed. The micro electronic processing is any one of epitaxy, diffusion
processing, oxidation processing, ion implantation processing, and etching. When installing the
05-05-2019
20
carbon nanotube structure, the first electrode 104 and the second electrode 106, the first
integrated circuit chip 120 is not broken since high temperature is not required.
[0058]
Furthermore, an insulating layer 118 is provided on the first surface 101 of the silicon substrate.
The insulating layer 118 has a single layer structure or a multilayer structure. In the case where
the insulating layer 118 has a single-layer structure, the insulating layer 118 is provided only on
the surface of the protrusion 1220 or attached to all of the first surface 101 of the first substrate
102. Here, pasting means that the insulating layer 118 covers the bottom and the side of the
recess 1222 and covers the surface of the protrusion 1220. That is, the insulating layer 118
directly covers the recess 1222 and the protrusion 1220, and the relief shape of the insulating
layer 118 and the relief shape of the recess 1222 and the protrusion 1220 are the same.
Thereby, in any case, the insulating layer 118 can insulate the first substrate 102 from the sound
wave generator 108. The material of the insulating layer 118 is silica, silicon nitride or a
combination thereof, and the insulating layer 118 may be another insulating material as long as
it can insulate the first substrate 102 from the sound wave generator 108. The thickness of the
insulating layer 118 is 10 nm to 2 μm, and specifically, 50 nm, 90 nm or 1 μm. In addition,
when the material of the first substrate 102 is an insulating material, the insulating layer 118
does not have to be provided. In the present example, the insulating layer 118 is a continuous
single layer silicon, having a thickness of 1.2 μm, covering all of the first surface 101 of the first
substrate 102.
[0059]
In the present example, the sound wave generator 108 includes a plurality of carbon nanotube
wires. The plurality of carbon nanotube wires are spaced apart and disposed in parallel to form a
layered carbon nanotube structure. The extending direction of the carbon nanotube wire
intersects with the extending direction of the recess 1222 to form a specific angle. The extending
direction of the carbon nanotubes in the carbon nanotube wire is parallel to the extending
direction of the carbon nanotube wire. As a result, the plurality of carbon nanotube wires are
suspended and installed at positions corresponding to the concave portions 1222. The extending
direction of the carbon nanotube wire is preferably perpendicular to the extending direction of
the recess 1222. The distance between adjacent carbon nanotube wires is 1 μm to 200 μm.
Preferably, it is 50 micrometers-150 micrometers. In the present embodiment, the distance
between adjacent carbon nanotube wires is 120 μm, and the diameter of the carbon nanotube
wires is 1 μm.
05-05-2019
21
[0060]
The plurality of carbon nanotube wire manufacturing methods first install a carbon nanotube
film on the first electrode 104 and the second electrode 106, and then cut the carbon nanotube
film by a laser so as to be parallel and spaced apart from each other. Form a plurality of installed
carbon nanotube strips. Finally, the carbon nanotube strip is shrunk with an organic solvent to
form a carbon nanotube wire.
[0061]
Referring to FIG. 15, the carbon nanotube strip is treated with the organic solvent to form a
plurality of carbon nanotube wires spaced apart from one another. Both ends of the carbon
nanotube wire are connected to the first electrode 104 and the second electrode 106,
respectively. Thereby, the drive voltage of the sound wave generator 108 is reduced, and the
stability of the sound wave generator 108 is improved. In FIG. 15, the dark part is the substrate
and the white part is the electrode.
[0062]
In the process of treating the carbon nanotube strip with the organic solvent, the carbon
nanotubes located at the portion of the protrusion 1220 are strongly fixed to the surface of the
insulating layer 118 and thus are not basically shrunk. Therefore, the carbon nanotube wire is
favorably electrically connected to the first electrode 104 and the second electrode 106. The
width of the carbon nanotube strip is 10 μm to 50 μm to ensure that the carbon nanotube strip
is favorably shrunk to the carbon nanotube wire. If the width of the carbon nanotube strip is
wider than 10 μm to 50 μm, a crack may be formed in the process of shrinking the carbon
nanotube film, which affects the thermoacoustic effect. In addition, if the width of the carbon
nanotube strip is narrower than 10 μm to 50 μm, the carbon nanotube strip may be ruptured
in the process of shrinking, or the carbon nanotube wire formed may be thin, which affects the
useful life of the sound generator. Do. Thus, in this example, the width of the carbon nanotube
strip is 30 μm, the diameter of the contracted carbon nanotube wire is 1 μm, and the distance
between adjacent carbon nanotube wires is 120 μm. The width of the carbon nanotube strip is
not limited, and the width of the carbon nanotube strip can be selected as needed, as long as the
carbon nanotube wire generates sound properly. After the treatment with the organic solvent, the
05-05-2019
22
carbon nanotube wire is strongly stuck to the surface of the first substrate 102, and the
suspended portion is kept in a stretched state so that the carbon nanotube wire does not deform
during operation. To guarantee. This prevents the carbon nanotube wire from being deformed
and affecting the thermoacoustic effect.
[0063]
FIGS. 17 and 18 show the sound generation effect of the acoustic chip 40B due to the different
depths of the recess 1222. FIG. The depth of the recess 1222 is preferably 100 μm to 200 μm.
At this time, the loudspeaker 100 of the acoustic chip 40B reaches an acoustic frequency that
can be heard even by the human ear and has an excellent heat wavelength, so it is excellent in
thermoacoustic effect even in a small size. Furthermore, the first substrate 102 protects the
sound wave generator 108 while at the same time securing a sufficient distance between the first
substrate 102 and the sound wave generator 108. The distance prevents the heat generated by
the sound wave generator 108 from being reduced in volume because the heat generated by the
sound wave generator 108 is not completely absorbed by the first substrate 102 and is not
transmitted to the surrounding media. Also, it ensures that the sound generator 108 has
excellent sound effects for each sound frequency. If the depth of the recess 1222 is too deep,
there is a problem that the acoustic effect of the sound generator 108 is adversely affected.
[0064]
Eleventh Embodiment Referring to FIG. 19, an eleventh embodiment of the present invention
provides an acoustic device 50. The acoustic device 50 of the present embodiment includes a
loudspeaker 100, a second integrated circuit chip 140, and a printed circuit board 130. The
loudspeaker 100 and the second integrated circuit chip 140 are disposed on the printed circuit
board 130, and the loudspeaker 100 and the second integrated circuit chip 140 are electrically
connected by the printed circuit board 130.
[0065]
The structure of the loudspeaker 100 of the eleventh embodiment is basically the same as that of
the loudspeaker 100 of the first embodiment, except that the first electrode 104 and the second
electrode 106 are printed by the conducting wire 110 in different parts. It is a point electrically
connected to a pad (not shown) on the surface of the substrate 130. Also, the loudspeaker 100 is
05-05-2019
23
fixed to the printed board 130 by an adhesive, or fixed to the printed board 130 by a removable
method (for example, insertion).
[0066]
Although the position at which the second integrated circuit chip 140 is installed is not limited,
the loudspeaker 100 and the second integrated circuit chip 140 may be installed on the surface
of the printed circuit board 130 and may be installed on the surface of the printed circuit board
130 installed Preferably, the second integrated circuit chip 140 is installed. The second
integrated circuit chip 140 may be fixed to the printed circuit board 130 by an adhesive or may
be fixed to the printed circuit board 130 by a removable method (e.g., an insertion method). In
addition, since the second integrated circuit chip 140 includes a power amplification circuit and a
DC bias circuit for frequency electric signals, the second integrated circuit chip 140 has a power
amplification action and a DC bias action for the frequency electric signals. As a result, the
second integrated circuit chip 140 increases the frequency electrical signal that has been input
and then inputs it to the sound wave generator 108, and at the same time solves the problem of
frequency multiplication of the frequency electrical signal by means of direct current bias. The
second integrated circuit chip 140 may be a packaged chip or an unpackaged bare chip. The size
and shape of the second integrated circuit chip 140 are not limited. Since the second integrated
circuit chip 140 only realizes the power amplification action and the DC bias action, the structure
of the internal circuit is simple and the area is also smaller than 1 cm <2>. For example, smaller
than 49 mm <2>, 25 mm <2>, 9 mm <2> or 9 mm <2>. Thereby, the acoustic device 50 is
miniaturized. In the present embodiment, the second integrated circuit chip 140 is a packaged
chip and has a plurality of pins 218. The integrated circuit chip 140 and the printed circuit board
130 are mutually installed in a removable manner by the plurality of pins 218. The second
integrated circuit chip 140 is electrically connected to the first electrode 104 and the second
electrode 106 respectively by the lead wire inside the printed circuit board 130. When the
acoustic device 50 is activated, the second integrated circuit chip 140 outputs a frequency
electrical signal to the acoustic wave generator 108. The output frequency electric signal causes
the sound wave generator 108 to intermittently heat the surrounding medium to thermally
expand the surrounding medium and exchange heat to generate a sound wave.
[0067]
The printed circuit board 130 is formed by processing a laminate coated with copper foil. In
addition, the loudspeaker 100 and the second integrated circuit chip 140 can be electrically
connected by the printed circuit board 130 as needed. A connector (not shown) is installed on
05-05-2019
24
the surface of the printed circuit board 130, and a plurality of lead wires (not shown) are
installed inside the printed circuit board 130. A loudspeaker 100 and other electronic
components are installed or connected by the connector and a plurality of lead wires. The
connector is integrated on the printed circuit board 130 and may be any one or more of a pad, a
pin and an insertion hole. The size and shape of the printed circuit board 130 are not limited and
can be selected as needed. Also, the acoustic device 50 may be installed inside an electronic
component (for example, a mobile phone, a computer, etc.), and the circuit of the electronic
component and the printed circuit board 130 may be electrically connected.
[0068]
Example 12 Referring to FIG. 20, Example 12 of the present invention provides an acoustic
device 60. The acoustic device 60 of the present embodiment includes an acoustic chip 10A, a
second integrated circuit chip 140, and a printed board 130. The second integrated circuit chip
140 is mounted on the printed circuit board 130 by a plurality of pins 218, and the acoustic chip
10A is mounted on the printed circuit board 130 by the pins 212. Further, the acoustic chip 10A
and the second integrated circuit chip 140 are electrically connected by the printed circuit board
130.
[0069]
The structure of the acoustic device 60 of the twelfth embodiment and the structure of the
acoustic device 50 of the eleventh embodiment are basically the same, except that the acoustic
device 60 includes the housing 200, and the housing 200. Has a space, and the loudspeaker 100
is housed in this space. The acoustic chip 10A is mounted on the printed circuit board 130 by the
two pins 212 outside the housing 200. In the present embodiment, the two pins 212 are a pin
grid array and are disposed on the bottom surface of the second substrate 202 opposite to the
loudspeaker 100, and electrically connected to the first electrode 104 and the second electrode
106 by the lead 110. Connected to
[0070]
Example 13 Referring to FIG. 21, Example 13 of the present invention provides an acoustic
device 70A. The acoustic device 70A of the present embodiment includes an acoustic chip 20A, a
second integrated circuit chip 140, and a printed circuit board 130. The integrated circuit chip
05-05-2019
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140 is mounted on the printed circuit board 130 by a plurality of pins 218, and the acoustic chip
20A is mounted on the printed circuit board 130 by the pins 212. Also, the acoustic chip 20A
and the second integrated circuit chip 140 are electrically connected by the printed circuit board
130.
[0071]
The structure of the acoustic device 70A of the thirteenth embodiment is basically the same as
the structure of the acoustic device 50 of the eleventh embodiment, except that the acoustic
device 70A includes a housing 200, and the housing 200 , And a point at which the loudspeaker
100 is housed in this space. The acoustic chip 20A is mounted on the printed circuit board 130
by two pins 212. The two pins 212 are pin grid arrays, and are disposed on the bottom of the
second substrate 202 opposite to the loudspeaker 100, and are electrically connected to the first
electrode 104 and the second electrode 106 by the leads 110 respectively.
[0072]
Example 14 Referring to FIG. 22, Example 14 of the present invention provides an acoustic
device 70B. The acoustic device 70B of the present embodiment includes an acoustic chip 20A, a
second integrated circuit chip 140, a printed circuit board 130, and an electronic element 150.
The second integrated circuit chip 140 is mounted on the printed circuit board 130 by a plurality
of pins 218, and the acoustic chip 20A is mounted on the printed circuit board 130 by the pins
212. Further, the acoustic chip 20A and the second integrated circuit chip 140 are electrically
connected by the printed circuit board 130.
[0073]
The structure of the acoustic device 70B of the fourteenth embodiment is basically the same as
the structure of the acoustic device 70A of the thirteenth embodiment except that the acoustic
device 80 includes at least one electronic element 150, One electronic element 150 is installed
on the printed circuit board 130. The electronic element 150 is a capacitance element, a
resistance element or the like. The type and number of electronic devices 150 can be selected as
needed. The electronic component 150 and the second integrated circuit chip 140 are
interconnected to support the operation of the loudspeaker 100.
05-05-2019
26
[0074]
Example 15 Referring to FIG. 23, Example 15 of the present invention provides an acoustic
device 80. The acoustic device 80 of the present embodiment includes an acoustic chip 20A, a
second integrated circuit chip 140, and a printed circuit board 130. The plurality of pins 218
mount the second integrated circuit chip 140 on the printed circuit board 130, and the pins 212
mount the acoustic chip 20 A on the printed circuit board 130. Further, the acoustic chip 20A
and the second integrated circuit chip 140 are electrically connected by the printed circuit board
130.
[0075]
The structure of the acoustic device 80 of the fifteenth embodiment is basically the same as the
structure of the acoustic device 70A of the thirteenth embodiment except that the two pins 212
are surface-mounted, and the two pins are different. The points 212 are placed at two corners
contacting the printed circuit board 130 of the housing 200. The two pins 212 are welded to the
corresponding pads of the printed circuit board 130.
[0076]
EXAMPLE 16 Referring to FIG. 24, Example 16 of the present invention provides an acoustic
device 90. The acoustic device 90 of the present embodiment includes an acoustic chip 40B, a
second integrated circuit chip 140, and a printed circuit board 130. The second integrated circuit
chip 140 is mounted on the printed circuit board 130 by a plurality of pins 218, and the acoustic
chip 40 B is mounted on the printed circuit board 130 by the pins 212. Further, the acoustic chip
40B and the second integrated circuit chip 140 are electrically connected by the printed circuit
board 130.
[0077]
The structure of the acoustic device 90 of the sixteenth embodiment is basically the same as the
structure of the acoustic device 70A of the thirteenth embodiment, except that the first surface
101 of the first substrate 102 has a plurality of concavo-convex structures. 122 is a point where
the loudspeaker 100 includes a plurality of first electrodes 104 and a plurality of second
electrodes 106.
05-05-2019
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[0078]
The acoustic chip and the acoustic device of the present invention have the following advantages.
First, by accommodating the loudspeaker in the space, the carbon nanotube structure of the
loudspeaker can be protected so that the carbon nanotube structure is not broken by external
force. Second, the pins allow the acoustic device to be connected to external circuitry, which is
convenient for use and can be applied to the circuit board of conventional electronic
components. Third, the integrated circuit chip is mounted on the printed circuit board and the
loudspeaker is mounted on the printed circuit board by the substrate. At this time, the
loudspeaker and the integrated circuit chip are electrically connected by the printed circuit
board. Thereby, the acoustic device is convenient to use because the structure is simplified and
the miniaturization can be realized.
[0079]
10A, 10B, 10C, 20A, 20B, 20C, 30A, 30B, 40A, 40B Acoustic chip 50, 60, 70A, 70, 90 Acoustic
device 100 Loudspeaker 101 First surface 102 First substrate 103 Second surface 104 First
electrode 106 Second electrode 108 Sound wave generator 110 Lead wire 114 Second recess
116 Third recess 118 Insulating layer 120 First integrated circuit chip 122 Irregular structure
1220 Protrusion 1222 Recess 130 Printed circuit board 140 Second integrated circuit chip 150
Electronic element 200 housing 202 second substrate 204 protective cover 206 annular side
wall 208 bottom wall 210 opening 212, 218 pin 214 first recess 216 protective net
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