close

Вход

Забыли?

вход по аккаунту

?

JP2015177382

код для вставкиСкачать
Patent Translate
Powered by EPO and Google
Notice
This translation is machine-generated. It cannot be guaranteed that it is intelligible, accurate,
complete, reliable or fit for specific purposes. Critical decisions, such as commercially relevant or
financial decisions, should not be based on machine-translation output.
DESCRIPTION JP2015177382
Abstract: [Problem] To provide a device and the like capable of arranging an element and a
through wiring portion even at high density. A method of manufacturing a device 12 in which an
electrode of an element 3 is electrically connected to a through wiring in a substrate 1, the
element 3 being disposed on a first substrate 1 in which a through hole 4 is formed. The
structure is prepared, and the second substrate 7 on which the conductive seed layer is formed is
prepared. Then, the wall portion 6 is formed in the first substrate so as to form an opening
connected to the through hole, and the seed layer and the element side surface of the structure
are joined via the adhesive layer 8 to form the through hole and the wall. The adhesive layer
entering the interior of the part is removed to expose the seed layer inside the opening. Using the
seed layer, the conductor 9 is filled by electrolytic plating inside the wall portion and the through
hole. [Selected figure] Figure 1
Device in which an element electrode is connected to a through wiring, and a method of
manufacturing the same
[0001]
The present invention relates to a device in which an electrode of an element such as a capacitive
transducer used as an ultrasonic transducer or the like is electrically connected to a through
wiring, a manufacturing method thereof, and the like.
[0002]
In recent years, various elements (such as sensors) have been manufactured by micromachining
04-05-2019
1
technology.
Many of these sensors are fabricated using semiconductor processes. These elements need not
only the miniaturization of the element itself but also the miniaturization including the mounting
portion. In the past, electrodes for connecting to a circuit board or a wiring board were often
arranged around the element, and the area including the mounting portion was large. As one of
the methods for solving such a problem, there is a method of forming a through wiring on a
substrate and electrically connecting a wiring of an element on the front surface of the substrate
and a wiring on the back surface of the substrate. As a result, an electrode can be formed on the
back surface of the substrate, and the device including the mounting portion can be miniaturized.
[0003]
With regard to the above technology, Patent Document 1 discloses a method of manufacturing a
through wiring board when a functional element such as a cantilever is formed on the through
wiring board. In this preparation method, the substrate on which the through holes are formed is
adhered to the substrate via an adhesive layer (film resist) formed on the surface of the plating
seed layer on the substrate. Then, after removing the adhesive layer in the region connected to
the through hole, a copper columnar electrode is formed in the through hole. Finally, the support
with the seed layer and the adhesive layer are separated from the through wiring substrate.
Further, Patent Document 2 discloses a manufacturing method in the case where a capacitive
ultrasonic transducer is formed on a through wiring substrate as a functional element. In this
manufacturing method, after forming a through hole in a silicon substrate and forming
polycrystalline silicon to be a wiring material inside the through hole, a capacitance type element
is formed.
[0004]
JP-A-2006-13330 JP-A-2010-272956
[0005]
However, in the manufacturing method of Patent Document 1, when removing the adhesive layer
(film resist) in the region connected to the through hole in order to expose the plating seed layer,
no residue of the adhesive layer should be generated.
04-05-2019
2
Moreover, since it is the inside of a through-hole, it is not easy to confirm that the adhesion layer
was removed, and when removing, it is necessary to overetch. However, when the over-etching
time becomes long, it becomes difficult to control the amount of lateral spread of the portion to
be removed. As a result, it is necessary to provide a large amount of margin for the amount of the
electrode material to spread in the lateral direction, which may make it impossible to arrange the
element and the through electrode portion at high density. Further, in the case of the through
wiring made of polycrystalline silicon in the manufacturing method of Patent Document 2, it is
not easy to lower the resistance of the through wiring because the resistivity of the
polycrystalline silicon is high. Even if copper is used as the wiring material, the number of
processes for polishing both surfaces of the substrate may increase, resulting in an increase in
cost.
[0006]
In view of the above-mentioned subject, a manufacturing method of a device by which an
electrode of an element of the present invention is electrically connected with penetration wiring
in a substrate has the following processes. A step of preparing a structure in which an element is
disposed on a first substrate in which a through hole is formed. Preparing a second substrate
having a conductive seed layer formed thereon; Forming a wall portion on the first substrate to
form an opening connected to the through hole; Bonding the seed layer and the element-side
surface of the structure via an adhesive layer. Removing the adhesive layer that has entered the
interior of the through hole and the wall portion to expose the seed layer in the interior of the
opening. Filling the conductor by electrolytic plating in the wall and the through hole using the
seed layer;
[0007]
Further, in view of the above problem, the device according to the present invention in which the
electrode of the element is electrically connected to the through wiring in the through hole of the
substrate is connected to the through hole on the surface of the substrate on which the element
is disposed. A wall portion having an opening is formed, and a conductor forming the through
wiring is filled in the opening of the wall portion and the inside of the through hole.
[0008]
04-05-2019
3
According to the present invention, the wall portion is formed by being connected to the through
hole of the substrate on which the element is formed, and the second substrate and the surface of
the structure on the element side are joined via the adhesive layer.
Then, after removing the adhesive layer inside the through hole and the opening to expose the
seed layer, the inside of the through hole is filled with a conductor. By the wall portion, the
conductor can be suppressed from spreading in the lateral direction more than the outer
periphery of the through hole in the surface on the element side of the structure. Therefore, it is
possible to arrange the element and the through wiring portion even at high density.
[0009]
The figure explaining the example of the device of the present invention with which the element
was connected with the penetration wiring in a substrate. Sectional drawing explaining the
example of the manufacturing method of the device of this invention. Sectional drawing
explaining the example of the manufacturing method of the device of this invention. FIG. 2 is a
cross-sectional view for explaining Example 1 of a method of manufacturing a device of the
present invention. FIG. 2 is a cross-sectional view for explaining Example 1 of a method of
manufacturing a device of the present invention. Sectional drawing explaining Example 2 of the
manufacturing method of the device of this invention. FIG. 1 is a diagram showing an
embodiment of a subject information acquisition apparatus of the present invention.
[0010]
In the method of manufacturing a device according to the present invention, in which the
electrode of the element is electrically connected to the through wiring in the substrate, a
structure in which the element is disposed on the first substrate having the through hole is
prepared A second substrate having a seed layer of Then, a wall portion such as an annular
protrusion is formed on the first substrate so as to form an opening connected to the through
hole, and the seed layer and the element side surface of the structure are joined via the adhesive
layer. The adhesive layer which has entered the inside of the through hole and the wall is
removed to expose the seed layer inside the opening. The exposed seed layer is used to fill the
inside of the wall portion and the through hole with a conductor by electrolytic plating. By the
wall portion having the opening connected to the through hole, the conductor can be prevented
from spreading to the outside of the through hole on the element side surface of the structure,
and the element and the through wiring portion can be arranged with high density.
04-05-2019
4
[0011]
FIGS. 1A and 1B show a device with an electromechanical transducer to which a method for
manufacturing a device in which an element is connected to a through wire in a through hole of a
substrate according to an embodiment of the present invention is applied. FIG. 1A shows a crosssectional view of a device with an electromechanical transducer such as a capacitive transducer
which is an element, and FIG. 1B shows a top view around the through hole 4. The
electromechanical transducer is, for example, a capacitive transducer having a cell having a
structure in which a vibrating membrane including a second electrode provided opposite to the
first electrode with a gap therebetween is vibratably supported. It is. In the device 12 provided
with an electromechanical transducer, the functional element 3 is formed on the insulating layer
2 on the active surface (surface on which the element is disposed) of the substrate 1. For
example, a silicon wafer or glass can be used as the substrate 1. When the substrate 1 is a glass
substrate, the insulating layer 2 may not be formed. As the insulating layer 2, an insulating
material such as a silicon oxide film or a silicon nitride film can be used. The functional element 3
may include a transistor or the like in addition to an element capable of electro-mechanical
conversion. The upper wire 10 connected to the functional element 3 is electrically connected to
the conductor 9 inside the through hole 4 in the state of being insulated from the substrate 1 by
the insulating film 5, and further the side opposite to the active surface of the substrate 1 It is
electrically connected to the lower wiring 11 on the back surface of the device. The conductor 9
functioning as a through wiring can be formed using electrolytic plating, but in consideration of
cost and resistance reduction, it is desirable to use a material whose main material is copper. The
upper wiring 10 and the lower wiring 11 may be metals or alloys, and a low resistance material
mainly made of aluminum is desirable. A silicon oxide film, a silicon nitride film, or the like can
be used as the insulating film 5 on the inner wall surface of the through hole and the back
surface of the substrate.
[0012]
Furthermore, in the active surface of the substrate 1, the wall portion 6 which is an annular
protrusion or the like has its inner periphery contacting the outer periphery of the through hole
4 or the inner periphery includes the outer periphery of the through hole 4 It is so formed. That
is, the wall portion is formed in the vicinity of the outer periphery of the through hole so as to
surround the through hole. The wall 6 is required when forming the conductor 9 in the through
hole 4 and may be removed in the process after forming the conductor 9. In the above
configuration, the opening and the through hole 4 are connected to form the wall portion 6 in a
04-05-2019
5
state in which the wall portion 6 is formed by contacting or including the inner periphery on the
outer peripheral line of the through hole 4 It is noted that The wall 6 may be made of an
insulating film such as a dry film resist, a resist, or a polyimide. With this configuration, the wall
portion 6 having the opening connected to the through hole 4 can prevent the conductor 9 from
spreading in the lateral direction on the active surface of the substrate 1, and the elements and
the through wiring portion can be arranged with high density. Devices can be made. In FIG. 1A,
one through wiring is disposed for one functional element 3. However, a plurality of through
wirings may be provided for one functional element, and a plurality of functional elements may
be provided. Alternatively, one or more through wires may be formed.
[0013]
An example of a method for manufacturing a device of the present invention will be described
with reference to FIGS. 2-1 (a) to (g) and FIGS. 2-2 (h) to (l). In FIG. 2A, the first substrate 1 is
prepared, and the insulating layer 2 is formed on the upper and lower surfaces of the substrate 1.
For example, a silicon wafer or glass can be used as the substrate 1. When the substrate 1 is a
glass substrate, the insulating layer 2 may not be formed. The thickness of the substrate 1 is, for
example, 100 to 1000 μm. When the substrate 1 is a silicon wafer, it may be made of either
high resistance silicon or low resistance silicon. Here, the substrate 1 is made of low-resistance
silicon having a resistivity of 0.1 Ωcm or less. As the insulating layer 2, an insulating material
such as a silicon oxide film or a silicon nitride film is formed. The insulating layer 2 can be
composed of a single layer film or a multilayer film. Here, as the insulating layer 2, for example, a
silicon oxide film with a thickness of 0.1 to 1 μm is formed by thermal oxidation. Next, the
functional element 3 is formed on the insulating layer 2 on the active surface of the substrate 1.
The functional element 3 can be formed with various types of electro-mechanical convertible
elements or other elements.
[0014]
Furthermore, as shown in FIG. 2B, the through holes 4 are formed using a deep-reactive ion
etching (D-RIE) technique of silicon. For example, when the cross-sectional shape of the through
hole 4 is circular, the diameter is 10 to 100 μm. The through holes may be circular or polygonal,
and the vertical cross-sectional shape may be vertical or tapered. In addition, the inner wall
surface of the through hole 4 may be smoothed as necessary. Furthermore, as shown in FIG. 2C,
the insulating film 5 is formed on the inner wall of the through hole 4. The insulating film 5 is
preferably made of a highly insulating material such as, for example, a silicon oxide film, a silicon
nitride film, aluminum oxide, or tantalum pentoxide, and is preferably formed at a temperature at
04-05-2019
6
which the functional element 3 is formed. The thickness of the insulating layer 5 can be
determined according to the performance of the electromechanical transducer or the like. The
thickness of the insulating film 5 is, for example, 0.1 to 4 μm. When forming a silicon oxide film,
there are methods such as chemical vapor deposition (CVD) and atomic layer deposition (ALD).
The insulating film 5 may be a single layer film or a multilayer film, and if necessary, a barrier
layer may be formed between the inner wall of the through hole 4 and the insulating film 5 to
prevent the adhesion layer and the diffusion of the conductor 9. Good. In the present
embodiment, the insulating film 5 is also formed on the back surface of the substrate 1.
[0015]
Next, as shown in FIG. 2D, the wall portion 6 is formed such that the opening thereof is
connected to the through hole 4. The wall 6 may be made of a dry film resist, a photoresist, a
resin such as polyimide, an insulating material, a metal material, or the like, but it is desirable
that the wall 6 be insulating. The wall 6 is formed, for example, by applying a negative dry film
resist to the active surface of the substrate 1 by a lamination method or a roller pressure bonding
method, and then performing exposure, development, and curing. The film thickness of the dry
film resist is, for example, 5 to 20 μm, but it may be thicker than the height of the functional
element 3. Although the wall 6 is formed in the process of FIG. 2D, the insulating film of FIG. 2C
is formed before the process of forming the through hole 4 of FIG. It may be before the step of
forming 5. The thickness in the lateral direction of the wall 6 may be a thickness that does not
peel off when forming the conductor. With regard to the formation of the functional element 3 as
well, after the step of forming the through hole 4 of FIG. 2-1 (b), or after the step of forming the
insulating film 5 of FIG. 2-1 (c), (D) may be after the step of forming the wall 6. At this time,
appropriate portions may be masked.
[0016]
Furthermore, as shown in FIG. 2E, the support 7 is prepared which is a second substrate having
conductivity at least on its surface (that is, a second substrate on which a conductive seed layer is
formed). . Although a metal, an insulating material, etc. can be used for the support body 7, in the
case of an insulating material, it is necessary to form a metal film as a seed layer on the surface
of an insulating material. For example, stainless steel, nickel, titanium or the like can be used as
the material of the support 7, but it is desirable to select a material resistant to the plating
solution in the subsequent step of forming the conductor 9.
04-05-2019
7
[0017]
Further, as shown in FIG. 2F, the adhesive layer 8 is formed on the conductive surface (seed
layer) of the support 7. As the adhesive layer 8, a nonionic surfactant can be used, and for
example, polyoxyethylene lauryl ether, polyvinyl alcohol or the like can be used. The adhesive
layer 8 can be formed by a dip method, a spin coat method, a spray coat method or the like. The
thickness of the adhesive layer may be, for example, 4 to 20 μm, as long as sufficient adhesive
strength can be obtained.
[0018]
Furthermore, as shown in FIG. 2G, the conductive surface (seed layer) of the support 7 and the
active surface of the wall 6 to the substrate 1 of the substrate 1 are higher than the melting point
of the adhesive layer 8. Join while applying a load at temperature. For example, it is possible to
apply a load and bond them on a hot plate or in an oven. By so doing, the conductive surface of
the support 7 and the wall portion 6 can be bonded together without a gap. The adhesive layer
may be formed on the active surface of the substrate 1.
[0019]
Next, as shown in FIG. 2H, the through holes 4 and the adhesive layer 8 inside the wall 6 are
removed to expose the conductive surface (seed layer) of the support 7. As a method of removing
the adhesive layer 8, there is a method in which a soluble solvent of a nonionic surfactant is
caused to penetrate into the through holes 4 to be dissolved. As the soluble solvent, water,
isopropyl alcohol, acetone, methanol, ethanol or the like can be used, but it can be removed also
by dry etching using oxygen plasma, etc., as long as the adhesive layer 8 can be dissolved. It is
not a thing. Since the wall 6 is connected to the through hole 4 when removing the adhesive
layer 8, the region from which the adhesive layer 8 is removed can be made only inside the
through hole 4 and the wall 6.
[0020]
Furthermore, as shown in FIG. 2-2 (i), the conductor 9 is embedded in the through hole 4 by
electrolytic plating from the surface of the seed layer having conductivity of the support 7 on the
04-05-2019
8
inner side of the through hole 4 and the wall 6. To fill. The conductor 9 can be made of, for
example, a material containing copper, nickel or the like as a main material thereof. Since the
wall portion 6 is connected to the through hole 4, the soluble solvent of the non-ionic surfactant
in the plating solution does not remove the adhesive layer 8 and penetrates the through wiring
region filled with the conductor 9. It can only be inside the hole 4. As a result, in the active
surface of the substrate 1, the conductors 9 can be prevented from spreading in the lateral
direction more than the outer periphery of the through hole 4, and the elements and through
wiring portions can be arranged with high density.
[0021]
Next, as shown in FIG. 2J, the portion of the back surface of the substrate 1 that protrudes from
the through hole 4 is planarized by chemical mechanical polishing (CMP). Further, as shown in
FIG. 2K, the support 7 and the adhesive layer 8 are separated from the substrate 1. The nonionic
surfactant is made solid to liquid by heating to a temperature above the melting point of the
nonionic surfactant. By so doing, the nonionic surfactant can be made to have fluidity, and the
adhesive force of the adhesive layer 8 can be reduced to facilitate peeling.
[0022]
Further, as shown in FIG. 2L, the upper wiring 10 and the lower wiring 11 are respectively
formed on the active surface of the substrate 1 and the reverse surface on the opposite side, and
are electrically connected to the conductor 9 of the through wiring. The upper wiring 10 and the
lower wiring 11 may be metals or alloys, and are preferably formed of a low resistance metal
mainly composed of copper or aluminum. The film thickness of the upper wiring 10 and the
lower wiring 11 is, for example, 0.1 to 1 μm. As a method of forming the wiring, a sputtering
method, a vacuum evaporation method, or the like can be used.
[0023]
Hereinafter, the present invention will be described in more detail by way of specific examples.
(Example 1) (When a Capacitance-Type Ultrasonic Transducer is Formed) As Example 1 using the
present invention, a method of manufacturing a device in which a capacitance-type ultrasonic
transducer is formed on a through wiring substrate, Description will be made with reference to
FIGS. 3-1 (a) to (h) and FIGS. 3-2 (i) to (k). In the ultrasonic transducer of the device 100, for
04-05-2019
9
example, two parallel plate electrodes facing each other across a gap (cavity) form a cell
structure, and the vibration of one of the vibratable electrode plates can transmit and receive
ultrasonic waves. The configuration of the ultrasonic transducer will be described using the
cross-sectional view of FIG. A vibrating film including a second electrode 106 formed on a silicon
substrate 101, which is a first substrate, with a substantially vacuum gap 108 formed with
respect to a first electrode 103 is provided. The vibrating membrane includes the second
electrode 106, the first membrane 105, the second membrane 107, and the third membrane
109, and is vibratably supported. In FIG. 3A, the configuration of the vibrating film is four layers,
but a three-layer configuration or another configuration may be adopted. Furthermore, as an
example of a wiring for driving, the first electrode 103 is used as a bias electrode, and the second
electrode 106 is used as a signal extraction electrode.
[0024]
In a manufacturing method, a first insulating layer 102 is formed over a silicon substrate 101 in
order to insulate the substrate. The thickness of the silicon substrate 101 is 300 μm, preferably
a low resistance silicon substrate, and the resistivity is preferably 0.1 Ωcm or less. The insulating
layer 102 is a silicon oxide film with a thickness of 1 μm formed by thermal oxidation. Further,
the first electrode 103 is formed over the insulating layer 102. The first electrode 103 is formed
of titanium or tungsten by sputtering and has a thickness of 0.05 μm. The insulating layer 104
may be formed over the first electrode 103.
[0025]
Furthermore, the first membrane 105, the second membrane 107, and the third membrane 109
are silicon nitride films formed by plasma enhanced chemical vapor deposition (PE-CVD). It is
formed to have a tensile stress of about 150 MPa or less. The thicknesses of the first to third
membranes are 0.4 μm, 0.3 μm and 0.7 μm, respectively. The gap 108 has a diameter of 31
μm and a height of 0.2 μm. The second electrode 106 is formed by sputtering titanium,
aluminum, or an alloy containing aluminum, and has a diameter of 27 μm and a thickness of 0.1
μm.
[0026]
In FIG. 3A, the through hole 110 is formed after the capacitive ultrasonic transducer is formed.
04-05-2019
10
The through holes 110 are formed using a deep ion etching (D-RIE) technique of silicon. The
through holes 110 have a substantially circular cross-sectional shape and a diameter of 50 μm.
Further, the insulating film 111 is formed on the inner wall surface of the through hole 110 and
the back surface of the silicon substrate 101. The insulating film 111 forms a silicon oxide film
such that the thickness of the inner wall of the through hole 110 is 1 μm. In this case, the film is
formed by using TEOS-CVD (Chemical Vapor Deposition) so that a film can be formed at a
temperature equal to or lower than the film formation temperature of the above-mentioned
membrane.
[0027]
Furthermore, as shown in FIG. 3-1 (b), the wall portion 112 is formed to be connected to the
through hole 110. The wall portion 110 is formed by applying a negative dry film resist to the
active surface of the substrate 101 by a laminating method, and then performing exposure,
development and curing. The film thickness of the dry film resist is 5 μm, but the film thickness
may be higher than that of the capacitive ultrasonic transducer. Further, as shown in FIG. 3C, a
support 113 which is a second substrate having a conductive sheet layer is prepared. As the
support 113, a stainless steel plate having a thickness of 300 μm was used. Further, as shown in
FIG. 3D, an adhesive layer 114 of a nonionic surfactant is formed on either side of the support
113. Polyoxyethylene lauryl ether was used as the adhesive layer 114 of the nonionic surfactant.
Polyoxyethylene lauryl ether dissolved in a mixed solvent of cyclopentanone and acetone is spin
coated on the support 114 and left for 30 minutes to form a solid polyoxyethylene lauryl ether
layer.
[0028]
Next, as shown in FIG. 3E, the support 113 and the wall portion 112 are attached to each other
while applying a load under reduced pressure in a vacuum oven at 75 ° C. By doing this, it is
possible to firmly bond the gap between the surface of the support 113 and the wall 112 without
a gap. Thus, a conductive layer to be a seed layer for plating can be formed. Furthermore, as
shown in FIG. 3F, the structure to which the support 113 is bonded is immersed in water to
dissolve the adhesive layer 114 inside the through hole 110 and the wall portion 112. At this
time, since the wall portion 112 is formed in connection with the through hole 110, the region
where the adhesive layer 114 is removed can be limited to only the inside of the through hole
110 and the wall portion 112.
04-05-2019
11
[0029]
Furthermore, as shown in FIG. 3-1 (g), the conductive support 113 on the inner side of the
through hole 110 and the wall 112 is plated with copper using a copper sulfate plating solution
to form the inside of the through hole 110. Fill with copper 115. Since the wall portion 112 is
formed in connection with the through hole 110, the soluble solvent of the non-ionic surfactant
in the plating solution does not dissolve the adhesive layer 114 outside the through hole 110,
and the conductor 115 is filled. The through wiring area can be made only inside the through
hole 110. Thus, in the active surface of the substrate 101 on which the elements are formed, the
conductors 115 can be prevented from spreading in the lateral direction more than the outer
periphery of the through holes 110, and the elements and the through wiring portions can be
arranged with high density. Furthermore, as shown in FIG. 3H, after plating, the portion of the
back surface of the substrate 101 that protrudes from the through hole 110 is planarized by
chemical mechanical polishing (CMP).
[0030]
Next, as shown in FIG. 3I, the support 113 and the adhesive layer 114 are peeled off from the
substrate 101. As a peeling method, the substrate after chemical mechanical polishing was
placed on a hot plate at 80 ° C., and a force was applied to the substrate in the horizontal
direction to shift the substrate. By so doing, the substrate 101 and the support 113 can be easily
peeled off. Further, as shown in FIG. 3J, electrode holes 116a and 116b for electrically
connecting the conductor 115 and the second electrode 105, and the conductor 115 and the first
electrode 103, respectively, are formed. The electrode holes 116a and 116b are formed using a
chemical dry etching apparatus.
[0031]
Further, as shown in FIG. 3K, upper wirings 117a and 117b and lower wirings 118a and 118b
are formed on the active surface and the back surface of the substrate 101, and are electrically
connected to the conductors 115 of the through wirings, respectively. The upper wirings 117a
and 117b and the lower wirings 118a and 118b are formed by sputtering aluminum or an
aluminum alloy, and the film thickness of the wirings is 0.5 μm.
[0032]
04-05-2019
12
(Example 2) (Case where Wall is Removed) A manufacturing method of Example 2 of the present
invention will be described with reference to FIG. Example 2 is the same as the manufacturing
method up to the step of FIGS. 3-2 (i) of Example 1 of the present invention, except that the wall
112 is removed. As a method of removing the wall portion 112, it is removed by ashing with
oxygen plasma. In FIG. 4, the wall portion 112 is removed, and the upper wires 119a and 119b
and the lower wires 120a and 120b are formed on the active surface and the back surface of the
substrate 101, respectively. Connect to By removing the wall 112, the reliability of the
connection can be enhanced. That is, the connection region with the upper wires 119a and 119b
can be increased to areas other than the upper surface of the conductor 115. For example, it can
be electrically connected to the side wall of the conductor 115 protruding from the active surface
of the substrate 101. In this way, stable electrical connection is possible even if the area where
the conductor 115 protrudes from the substrate 101 is increased. The other points are the same
as in the first embodiment.
[0033]
Example 3 FIG. 5A shows an example of an object information acquiring apparatus using a
photoacoustic effect. The pulsed light oscillated from the light source 2010 is irradiated to the
subject 2014 via the optical member 2012 such as a lens, a mirror, and an optical fiber. The light
absorber 2016 inside the object 2014 absorbs the energy of the pulsed light and generates a
photoacoustic wave 2018 which is an acoustic wave. The device 2020 including the
electromechanical transducer of the present invention in the probe (probe) 2022 receives the
photoacoustic wave 2018, converts it into an electrical signal, and outputs the signal to the
signal processing unit 2024. The signal processing unit 2024 performs signal processing such as
A / D conversion and amplification on the input electric signal, and outputs the signal processing
to the data processing unit 2026. The data processing unit 2026 acquires object information
(characteristic information reflecting the optical characteristic value of the object such as a light
absorption coefficient) as image data using the input signal. Here, the signal processing unit
2024 and the data processing unit 2026 are collectively referred to as a processing unit. The
display unit 2028 displays an image based on the image data input from the data processing unit
2026. As described above, the subject information acquiring apparatus of the present example
includes the device according to the present invention, the light source, and the processing unit.
Then, the device receives a photoacoustic wave generated by the light emitted from the light
source being irradiated to the subject and converts it into an electrical signal, and the processing
unit acquires the information of the subject using the electrical signal. .
04-05-2019
13
[0034]
FIG. 5B shows a subject information acquiring apparatus such as an ultrasonic echo diagnostic
apparatus using reflection of acoustic waves. The acoustic wave transmitted from the device
2120 including the inventive electro-mechanical transducer in the probe (probe) 2122 to the
subject 2114 is reflected by the reflector 2116. The device 2120 receives the reflected acoustic
wave (reflected wave) 2118, converts it into an electrical signal, and outputs the signal to the
signal processing unit 2124. The signal processing unit 2124 performs signal processing such as
A / D conversion and amplification on the input electric signal, and outputs the signal processing
to the data processing unit 2126. The data processing unit 2126 acquires object information
(characteristic information reflecting a difference in acoustic impedance) as image data using the
input signal. Here, the signal processing unit 2124 and the data processing unit 2126 are also
referred to as a processing unit. The display unit 2128 displays an image based on the image
data input from the data processing unit 2126. As described above, the object information
acquiring apparatus of the present example includes the device of the present invention, and a
processing unit that acquires information of the object using the electric signal output from the
device, and the device includes , Receive an acoustic wave from a subject, and output an electrical
signal.
[0035]
The probe may be one that scans mechanically or one that is moved by a user such as a doctor or
an engineer relative to the subject (handheld type). Moreover, in the case of the apparatus using
a reflected wave like FIG.5 (b), you may provide the probe which transmits an acoustic wave
separately from the probe which receives. Furthermore, the apparatus has both the functions of
the apparatus shown in FIGS. 5A and 5B, object information reflecting the optical characteristic
value of the object, and object information reflecting the difference in acoustic impedance. , And
may be acquired. In this case, the device 2020 in FIG. 5A may transmit not only the
photoacoustic wave but also the transmission of the acoustic wave and the reception of the
reflected wave.
[0036]
1 · · First substrate (substrate), 3 · · · · · · · (Electro-mechanical conversion device), · · · · · · · · · · · · · · ·
· · · · · · · · · · · · 2 · bond Layer, 9 · · · Conductor (through wiring), 12 · · ·
04-05-2019
14
Документ
Категория
Без категории
Просмотров
0
Размер файла
28 Кб
Теги
jp2015177382
1/--страниц
Пожаловаться на содержимое документа