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JP2015224903

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DESCRIPTION JP2015224903
PROBLEM TO BE SOLVED: To provide a highly sensitive pressure sensor. A pressure sensor
according to one embodiment includes a substrate, a support, a film unit, and a magnetoresistive
element. The support portion is bonded to the substrate using a first bonding member and a
second bonding member different in Young's modulus. The membrane portion is supported by
the support portion and has flexibility. The magnetoresistive element includes a first magnetic
layer, a second magnetic layer, and a spacer layer disposed between the first magnetic layer and
the second magnetic layer, provided in the film portion. [Selected figure] Figure 5
Pressure sensor, microphone, ultrasonic sensor, blood pressure sensor and touch panel
[0001]
Embodiments of the present invention relate to a pressure sensor, a microphone, an ultrasonic
sensor, a blood pressure sensor and a touch panel.
[0002]
The pressure sensor using MEMS (Micro Electro Mechanical Systems) technology includes, for
example, a piezoelectric sensor, a piezoresistive sensor, and an electrostatic capacitance sensor.
On the other hand, pressure sensors using spin technology have been proposed, which have
different detection principles from these types of pressure sensors. In a pressure sensor using
spin technology, a spin valve strain element (also called a magnetoresistive element or an MR
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element) detects a change in resistance according to an anisotropic strain caused by an external
pressure. In a pressure sensor using spin technology, improvement in sensitivity is desired.
[0003]
Alfons Dehe, “Silicon microphone development and application”, Sensors and Actuators A133
(2007), p. 283-287
[0004]
The problem to be solved by the present invention is to provide a highly sensitive pressure
sensor, a microphone, an ultrasonic sensor, a blood pressure sensor and a touch panel.
[0005]
A pressure sensor according to an embodiment includes a substrate, a support, a film unit, and a
magnetoresistive element.
The support portion is bonded to the substrate using a first bonding member and a second
bonding member different in Young's modulus.
The membrane portion is supported by the support portion and has flexibility. The
magnetoresistive element includes a first magnetic layer, a second magnetic layer, and a spacer
layer disposed between the first magnetic layer and the second magnetic layer, provided in the
film portion.
[0006]
FIG. 1 is a perspective view showing a pressure sensor according to a first embodiment. FIG. 2 is
a top view showing a pressure sensor according to the first embodiment. Sectional drawing of the
pressure sensor in alignment with III-III 'shown in FIG. The figure which shows the relationship
between anisotropic distortion (epsilon) and resistance R in a magnetoresistive element. The
disassembled perspective view which shows the pressure sensor which concerns on 1st
Embodiment. FIG. 6 is a cross-sectional view of the pressure sensor along VI-VI ′ shown in FIG.
5; Sectional drawing of the pressure sensor which follows VII-VII 'shown in FIG. FIG. 2 is a
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perspective view showing the magnetoresistive element shown in FIG. 1; The disassembled
perspective view which shows the pressure sensor which concerns on 2nd Embodiment.
Sectional drawing of the pressure sensor which follows XX 'shown in FIG. Sectional drawing of
the pressure sensor which follows XI-XI 'shown in FIG. Sectional drawing which shows the
microphone which concerns on 3rd Embodiment. The front view which shows the portable
information terminal in which the microphone shown in FIG. 12 was integrated. Sectional
drawing which shows the blood pressure sensor which concerns on 4th Embodiment. The block
diagram showing the touch panel concerning a 5th embodiment.
[0007]
Hereinafter, embodiments will be described with reference to the drawings. The embodiment
relates to a pressure sensor using MEMS (Micro Electro Mechanical Systems) technology, and a
microphone, an ultrasonic sensor, a blood pressure sensor, and a touch panel using the pressure
sensor. The drawings are schematic or conceptual, and the relationship between the thickness
and width of each part, the ratio of sizes between parts, and the like are not necessarily the same
as the actual ones. In addition, even in the case of representing the same portion, the dimensions
and ratios may be different from one another depending on the drawings. In the following
embodiments, the same reference numerals are given to the same components, and the
overlapping description will be appropriately omitted.
[0008]
First Embodiment FIGS. 1 and 2 are a perspective view and a top view schematically showing a
pressure sensor according to a first embodiment. FIG. 3 schematically shows the cross section of
the pressure sensor obtained along the line III-III ′ shown in FIG. In FIGS. 1, 2 and 3, the
insulating part and the conductive part are omitted for the sake of clarity. The pressure sensor
shown in FIG. 1 includes a resin substrate 11 and a MEMS chip 20 mounted on the resin
substrate 11. The MEMS chip 20 is bonded and fixed to the resin substrate 11 using a bonding
member (die bonding material) such as a thermosetting resin.
[0009]
The MEMS chip 20 includes a support portion 21 provided on a resin substrate 11, a diaphragm
22 as a flexible film portion supported by the support portion 21, and a magnetoresistive
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element 23 provided on the diaphragm 22. And. The diaphragm 22 bends (distorts) when an
external pressure is applied to cause distortion in the magnetoresistive element 23 provided
thereon. The external pressure may be, for example, pressure by pressing, sound wave, ultrasonic
wave or the like. The electric resistance of the magnetoresistive element 23 changes in
accordance with the magnitude of distortion generated in the magnetoresistive element 23. The
pressure sensor according to the present embodiment can sense an external pressure by
detecting a change in electrical resistance.
[0010]
Although FIG. 1 shows an example in which six magnetoresistive elements 23 are provided, the
number of magnetoresistive elements 23 is not limited to six, and may be one, and two to five or
seven It may be more than.
[0011]
The support portion 21 is, for example, a silicon (Si) substrate.
The support portion 21 is formed in, for example, a square cylindrical shape having the hollow
portion 26 shown in FIG. The cavity 26 is open at two opposing surfaces. One of these two
surfaces is a bonding surface with the resin substrate 11, and the diaphragm 22 is fixed to the
end on the other surface side. The cavity 26 is sealed by the resin substrate 11 and the
diaphragm 22. The cavity 26 may be filled with a gas such as air or an inert gas, or may be
depressurized to a vacuum, or may be filled with a liquid. The shape of the support portion 21 is
not limited to the above-described shape, and may be any other shape as long as the diaphragm
22 can be supported so that the diaphragm 22 can be bent by an external pressure.
[0012]
The diaphragm 22 is formed of a thin film such as an amorphous silicon (a-Si) film, a silicon
oxide (SiOx) film, an aluminum oxide (AlOx) film, or a silicon nitride (SiN) film. The thin film
which forms the diaphragm 22 may be continuously formed outside the part which bends by
external pressure. Here, a portion of the thin film which is bent by external pressure is called a
diaphragm (film portion). The film portion is a thinly processed thin film region.
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[0013]
In the present embodiment, as shown in FIG. 2, the diaphragms 22 are formed in a rectangular
shape, and the three magnetoresistive elements 23 are disposed at both ends on the long side.
The direction parallel to the short side of the diaphragm 22 is called the short direction, and the
direction parallel to the long side of the diaphragm 22 is called the longitudinal direction. The
diaphragm 22 is fixed to the support 21 at its peripheral edge (two long sides and two short
sides). The change in the electrical resistance of the magnetoresistive element 23 becomes larger
as the strain generated in the magnetoresistive element 23 (more specifically, the anisotropic
strain which is the difference between the maximum main strain and the minimum main strain)
increases. Therefore, in order to increase the sensitivity of the pressure sensor, the
magnetoresistive element 23 may be disposed on the diaphragm 22 so that a larger distortion
occurs with respect to the external pressure. In the rectangular diaphragm 22, an anisotropic
distortion larger than that at the short side end or the central portion occurs at the long side end.
From this, it is preferable to dispose the magnetoresistive element 23 at the end on the long side
of the diaphragm 22.
[0014]
The process of mounting the MEMS chip 20 on the resin substrate 11 has a great influence on
the distortion generated in the diaphragm 22. In the present embodiment, the MEMS chip 20 is
mounted on the resin substrate 11 so as to apply the optimal anisotropic distortion to the
diaphragm 22. This enables highly sensitive sensing even at small pressures, as will be described
next.
[0015]
FIG. 4 shows an example of the relationship between the anisotropic strain ε and the electrical
resistance R in the magnetoresistive element. In FIG. 4, the anisotropic strain ε is on the
horizontal axis, and the resistance R is on the vertical axis. The sensitivity of the magnetoresistive
element becomes higher as the gauge factor GF indicating the ratio of the rate of change in
resistance to anisotropic strain is larger. The gauge factor GF is represented by the following
formula (1), and corresponds to the slope of the graph of FIG.
[0016]
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[0017]
Here, ΔR / R represents the rate of change in resistance, and Δε represents the change in
anisotropic strain.
The broken line in FIG. 4 indicates the range in which the gauge factor GF is high. Within this
range, highly sensitive sensing is possible even for weaker pressure fluctuations.
[0018]
A point O on the horizontal axis indicates anisotropic distortion occurring in the magnetoresistive
element according to the comparative example in an initial state in which no external pressure is
applied. In the magnetoresistive element according to the comparative example, the change in
electrical resistance is small when a small external pressure is applied. That is, the sensitivity is
low for small external pressure. A point O ′ on the horizontal axis indicates the anisotropic
strain generated in the magnetoresistive element 23 according to the present embodiment in the
initial state in which the external pressure is not applied. In the present embodiment, since
anisotropic strain is added in advance in mounting the MEMS chip 20, anisotropic strain in the
initial state of the magnetoresistive element 23 is larger than that of the magnetoresistive
element according to the comparative example. Therefore, in the magnetoresistive element 23, a
large electrical resistance change can be obtained even when a small external pressure is applied.
Therefore, high sensitivity sensing is possible even for small external pressure.
[0019]
Next, an example of a method of mounting the MEMS chip 20 on the resin substrate 11
according to the present embodiment will be described with reference to FIGS. 5 to 7. FIG. 5
shows the pressure sensor according to the present embodiment in a disassembled state. 6
shows a cross section of the pressure sensor obtained along the line VI-VI 'shown in FIG. 5, and
FIG. 7 shows a cross section of the pressure sensor obtained along the line VII-VII' shown in FIG.
It shows. As shown in FIG. 5, the MEMS chip 20 is bonded to the resin substrate 11 using the
first bonding member 31 and the second bonding member 32 having different Young's modulus.
The second adhesive member 32 has a Young's modulus lower than that of the first adhesive
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member 31. The first adhesive member 31 and the second adhesive member 32 are arranged
such that the latitudinal component of the strain applied to the diaphragm 22 by mounting
becomes larger than the longitudinal component. Specifically, the first adhesive member 31 is
applied to two regions (first regions) corresponding to the two short sides of the diaphragm 22 in
the adhesive surface of the support portion 21. The first region is a region extending along two
sides 24 parallel to the short direction of the diaphragm 22. The second adhesive member 32 is
applied to a region (second region) located between the first regions in the adhesive surface. The
second region is a region along two sides 25 parallel to the longitudinal direction of the
diaphragm 22.
[0020]
The first adhesive member 31 shrinks in the process of curing, and as shown in FIG. 6, a tensile
residual stress is generated in the short direction of the diaphragm 22. As a result, in the
diaphragm 22, tensile membrane stress occurs in the lateral direction of the diaphragm 22. On
the other hand, as shown in FIG. 7, residual tensile stress does not occur in the longitudinal
direction of the diaphragm 22, and therefore, tensile membrane stress in the longitudinal
direction of the diaphragm 22 does not occur in the diaphragm 22. Thus, anisotropic distortion is
applied to the diaphragm 22.
[0021]
In the present embodiment, it is possible to impart an optimal anisotropic strain to the
diaphragm 22 in advance by using adhesive members (the first adhesive member 31 and the
second adhesive member 32) having appropriate Young's modulus. . As a result, high sensitivity
can be sensed even for small pressures.
[0022]
FIG. 8 schematically shows one of the six magnetoresistance elements 23 shown in FIG. The
remaining five of the magnetoresistive elements 23 shown in FIG. 1 can have the same structure
as the magnetoresistive elements 23 shown in FIG. In FIG. 8, a part of the magnetoresistive
element 23 is shown. As shown in FIG. 8, the magnetoresistive element 23 includes a first
magnetic layer 51, a second magnetic layer 53, and an intermediate layer (spacer layer) disposed
between the first magnetic layer 51 and the second magnetic layer 53. Also referred to as 52). At
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least one of the first magnetic layer 51 and the second magnetic layer 53 is a magnetization free
layer whose magnetization direction is variable. In the present embodiment, the first magnetic
layer 51 is a magnetization free layer, and the second magnetic layer 53 is a magnetization fixed
layer in which the magnetization direction is fixed. The intermediate layer 52 is a nonmagnetic
layer.
[0023]
The operation in which the magnetoresistive element 23 functions as a strain sensor is based on
the application of the “inverse magnetostrictive effect” and the “magnetoresistive (MR)
effect”. The inverse magnetostrictive effect is obtained in the ferromagnetic layer used for the
magnetization free layer. The MR effect appears in a laminated film in which a magnetization free
layer, an intermediate layer, and a reference layer (for example, a magnetization fixed layer) are
laminated.
[0024]
The inverse magnetostrictive effect is a phenomenon in which the magnetization direction of the
ferromagnetic material changes due to the distortion generated in the ferromagnetic material.
That is, when an external strain is applied to the laminated film of the magnetoresistive element
23, the magnetization direction of the magnetization free layer changes. As a result, the relative
angle between the magnetization direction of the magnetization free layer and the magnetization
direction of the reference layer changes. At this time, the MR effect causes a change in electrical
resistance. The MR effect includes, for example, a GMR (Giant magnetoresistance) effect or a
TMR (Tunneling magnetoresistance) effect. The MR effect is manifested by passing a current
through the laminated film. By passing a current through the laminated film, the change in the
relative angle of the magnetization direction can be read as a change in electrical resistance. For
example, distortion occurs in the laminated film (the magnetoresistive element 23), and this
distortion changes the magnetization direction of the magnetization free layer, and changes the
relative angle between the magnetization direction of the magnetization free layer and the
magnetization direction of the reference layer. That is, the MR effect appears due to the inverse
magnetostrictive effect.
[0025]
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The magnetic layer used for the magnetization fixed layer directly contributes to the MR effect.
For example, a Co̶Fe̶B alloy is used for the second magnetic layer 53 which is the
magnetization fixed layer. Specifically, in the second magnetic layer 53, a (CoxFe100-x) 100-yBy
alloy (x is 0 at. % To 100 at. % Or less, y is 0 at. % To 30 at. % Or less. Can be used. For the
second magnetic layer 53, for example, another material such as an Fe--Co alloy may be used.
[0026]
The intermediate layer 52 cuts off the magnetic coupling between the first magnetic layer 51 and
the second magnetic layer 53, for example. For the intermediate layer 52, for example, a metal or
an insulator or a semiconductor is used. As the metal, for example, Cu, Au or Ag can be used. As
an insulator or a semiconductor, for example, magnesium oxide (such as MgO), aluminum oxide
(such as Al 2 O 3), titanium oxide (such as TiO), zinc oxide (such as ZnO), or gallium oxide (Ga) O) etc. can be used. As the middle layer 52, for example, a CCP (Current-Confined-Path) spacer
layer may be used. When a CCP spacer layer is used as the intermediate layer 52, for example, a
structure in which a copper (Cu) metal path is formed in an insulating layer of aluminum oxide
(Al 2 O 3) is used.
[0027]
A ferromagnetic material is used for the first magnetic layer 51 which is a magnetization free
layer. Specifically, as a material of the first magnetic layer 51, for example, an alloy containing at
least one of Fe and Co, such as FeCo alloy, NiFe alloy, etc. can be used. Alternatively, in the first
magnetic layer 51, a Co-Fe-B alloy, an Fe-Co-Si-B alloy, an Fe-Ga alloy having a large
magnetostriction constant λs, an Fe-Co-Ga alloy, a Tb-M-Fe alloy, Tb-M1-Fe-M2 alloy, Fe-M3-MB alloy, Ni, Fe-Al, ferrite or the like may be used.
[0028]
The shape of the diaphragm 22 is not limited to a rectangle as shown in FIG. 2, but may be
another shape such as a square, a circle, or an ellipse. Even when the diaphragm 22 is formed in
another shape, an optimum anisotropic distortion is previously made on the diaphragm 22 by
using an adhesive member having an appropriate Young's modulus in consideration of the
arrangement position of the magnetoresistive element 23. It can be added.
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[0029]
As described above, in the pressure sensor according to the first embodiment, the MEMS chip is
mounted on the resin substrate using two bonding members having different Young's modulus so
as to impart anisotropic strain to the diaphragm. . As a result, it is possible to perform sensing
with high sensitivity even to a small external pressure, and high sensitivity can be realized.
[0030]
Second Embodiment In the second embodiment, the MEMS chip is bonded to the substrate using
different bonding members with different coefficients of thermal expansion (CTE). In the second
embodiment, parts different from the first embodiment will be described, and the description of
the same parts as the first embodiment will be appropriately omitted.
[0031]
FIG. 9 schematically shows the pressure sensor according to the second embodiment in a
partially disassembled state. FIG. 10 shows a cross section of the pressure sensor obtained along
the line XX ′ shown in FIG. 9, and FIG. 11 shows a cross section of the pressure sensor obtained
along the line XI-XI ′ shown in FIG. It shows. In FIGS. 9, 10 and 11, the insulating part and the
conductive part are omitted for the sake of clarity.
[0032]
The pressure sensor shown in FIG. 9 includes a resin substrate 11 and a MEMS chip 20 mounted
on the resin substrate 11. The MEMS chip 20 includes a support 21 provided on a resin
substrate 11, a flexible diaphragm 22 supported by the support 21, and at least one (six in this
example) provided on the diaphragm 22. The magnetoresistive element 23 is provided. In the
present embodiment, the diaphragm 22 is formed in a circular shape, and the magnetoresistive
element 23 is disposed along the periphery of the diaphragm 22. Specifically, three are disposed
at two opposing ends of the center of the diaphragm 22.
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[0033]
The MEMS chip 20 is bonded to the resin substrate 11 using a first bonding member 41 and a
second bonding member 42 having different thermal expansion coefficients. The thermal
expansion coefficient of the second bonding member 42 is lower than the thermal expansion
coefficient of the first bonding member 41, and is substantially equal to the thermal expansion
coefficient of the support portion 21. The first adhesive member 41 and the second adhesive
member 42 are arranged such that the first direction component of the strain applied to the
diaphragm 22 by mounting becomes larger than the second direction component. The first
direction is orthogonal to the second direction. Specifically, the first adhesive member 41 is
applied to two regions (first regions) in the adhesive surface of the support portion 21 and
extending along the two sides 24 parallel to the first direction. Be done. The dimension in the
first direction of the first region is longer than the dimension in the second direction of the first
region. The second adhesive member 42 is applied to a region (second region) located between
the first regions in the adhesive surface. The second region is a region along two sides 25 parallel
to the second direction. The magnetoresistive element 23 is located on the first direction side as
viewed from the center of the diaphragm 22.
[0034]
The first adhesive member 41 shrinks in the process of curing, and as shown in FIG. 10, a tensile
residual stress is generated in the first direction. Thereby, a tensile membrane stress is generated
in the diaphragm 22 in the first direction. On the other hand, as shown in FIG. 11, in the second
direction, tensile residual stress does not occur so much, and therefore, the diaphragm 22 does
not generate tensile tensile film stress in the second direction. Thus, anisotropic distortion is
applied to the diaphragm 22.
[0035]
In the present embodiment, by using adhesive members (the first adhesive member 41 and the
second adhesive member 42) having an appropriate thermal expansion coefficient, it is possible
to impart an optimal anisotropic strain to the diaphragm 22 in advance. is there. As a result, high
sensitivity can be sensed even for small pressures.
[0036]
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The shape of the diaphragm 22 is not limited to a circle as shown in FIG. 9, but may be another
shape such as a rectangle, a square, or an ellipse. Even when the diaphragm 22 is formed in
another shape, an optimum anisotropic distortion can be applied to the diaphragm 22 by using
an adhesive member having an appropriate thermal expansion coefficient in consideration of the
arrangement position of the magnetoresistive element 23. It can be added in advance.
[0037]
As described above, in the pressure sensor according to the second embodiment, the MEMS chip
is mounted on the resin substrate using two adhesive members having different thermal
expansion coefficients so as to impart anisotropic strain to the diaphragm. Ru. As a result, it is
possible to perform sensing with high sensitivity even to a small external pressure, and high
sensitivity can be realized.
[0038]
Third Embodiment FIG. 12 schematically shows a microphone 120 according to a third
embodiment. The microphone 120 includes a pressure sensor 121. The pressure sensor 121 may
be any of the pressure sensors described in the first and second embodiments or a variation
thereof. The pressure sensor 121 of the present embodiment is a pressure sensor according to
the first embodiment.
[0039]
The pressure sensor 121 includes a resin substrate 11 and a MEMS chip 20 mounted on the
resin substrate 11. The resin substrate 11 includes, for example, a circuit such as an amplifier. A
cover 123 is provided on the resin substrate 11 so as to cover the MEMS chip 20. An opening
122 is formed in the cover 123. The sound wave 124 enters the inside of the cover 123 through
the opening 122.
[0040]
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The microphone 120 is sensitive to the sound pressure of the sound wave 124. By using a highly
sensitive pressure sensor, a microphone 120 sensitive to a wide range of frequencies can be
obtained. As a method of reducing the compressive stress generated in the diaphragm, a method
of providing a slit or a through hole in the diaphragm can be considered. However, when the
pressure sensor is used for a microphone, the slits or the through holes cause a roll-off due to the
sound wave wrap around in the low frequency region. In the pressure sensor 121 according to
the present embodiment, the decrease in sensitivity (roll-off) due to the sound wave is not
generated, and the sensitivity is high even in the low frequency region.
[0041]
The sound wave 124 is not limited to a signal in the audible range, but may be an ultrasonic
wave. The microphone 120 can function as an ultrasonic sensor by designing the diaphragm 22
so that the resonance frequency of the diaphragm 22 is in the frequency band of ultrasonic
waves. More preferably, the position of the opening 122 is disposed immediately above the
diaphragm (not shown in FIG. 12) of the pressure sensor 121 or on the resin substrate 11
directly under the diaphragm, since the straightness of the sound wave 124 is increased by
ultrasonic waves. An opening 122 is provided. Furthermore, it is desirable to provide a dustproof
mesh in the opening 122.
[0042]
FIG. 13 schematically shows an example in which the microphone 120 is applied to a portable
information terminal 130. As shown in FIG. 13, the microphone 120 is incorporated at the end of
the personal digital assistant 130. For example, the microphone 120 is disposed such that the
diaphragm 22 included in the pressure sensor 121 is substantially parallel to the surface of the
portable information terminal 130 on which the display unit 131 is provided. The arrangement
of the diaphragm 22 is not limited to the arrangement example shown in FIG. 12, but can be
changed as appropriate.
[0043]
The microphone 120 is not limited to the example applied to the portable information terminal
130 as shown in FIG. 13, and may be applied to an IC recorder or a pin microphone.
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[0044]
Fourth Embodiment FIG. 14 schematically shows a blood pressure sensor 140 according to a
fourth embodiment.
The blood pressure sensor 140 shown in FIG. 14 measures a human blood pressure, and includes
a pressure sensor 141. The pressure sensor 141 may be any of the pressure sensors described in
the first and second embodiments or a variation thereof. The pressure sensor 141 of the present
embodiment is a pressure sensor according to the first embodiment, and is capable of compact
and highly sensitive pressure sensing. The blood pressure sensor 140 can measure blood
pressure continuously by pressing the pressure sensor 141 against the skin 143 on the arterial
blood vessel 142. According to this embodiment, a highly sensitive blood pressure sensor 140 is
provided.
[0045]
Fifth Embodiment FIG. 15 schematically shows a touch panel 150 according to a tenth
embodiment. The touch panel 150 includes a plurality of first wires 154, a plurality of second
wires 155, a plurality of pressure sensors 151, and a control unit 156, as illustrated in FIG. Each
of the pressure sensors 151 may be any of the pressure sensors according to the first and fifth
embodiments or a variation thereof. The pressure sensor 151 is mounted on the inside of the
display and / or the outside of the display.
[0046]
The plurality of first wires 154 are arranged along the first direction. Each of the plurality of first
wires 154 extends along a second direction intersecting the first direction. The plurality of
second wires 155 are arranged along the first direction. Each of the plurality of second wires
155 extends along the second direction.
[0047]
Each of the plurality of pressure sensors 151 is provided at each intersection of the plurality of
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first wires 154 and the plurality of second wires 155. Each of the pressure sensors 151 is one of
the detection elements 151 e for detection. Here, the intersection includes a position where the
first wiring 154 and the second wiring 155 intersect and a region around the position.
[0048]
One end 152 of each of the plurality of pressure sensors 151 is connected to each of the
plurality of first wires 154. The other end 153 of each of the plurality of pressure sensors 151 is
connected to each of the plurality of second wires 155.
[0049]
The control unit 156 is connected to the plurality of first wires 154 and the plurality of second
wires 155. The control unit 156 includes a first wiring circuit 156a connected to the plurality of
first wirings 154, a second wiring circuit 156b connected to the plurality of second wirings 155,
a first wiring circuit 156a, and a second wiring circuit 156a. And a control circuit 157 connected
to the wiring circuit 156b.
[0050]
The pressure sensor 151 is capable of compact and highly sensitive pressure sensing. Therefore,
it is possible to realize a high definition touch panel.
[0051]
The pressure sensors according to the first and second embodiments can be used for various
pressure sensor devices such as an air pressure sensor and a tire air pressure sensor, in addition
to the above applications.
[0052]
According to the embodiment, a highly sensitive pressure sensor, a microphone, an ultrasonic
sensor, a blood pressure sensor, and a touch panel can be provided.
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[0053]
While certain embodiments of the present invention have been described, these embodiments
have been presented by way of example only, and are not intended to limit the scope of the
invention.
These novel embodiments can be implemented in various other forms, and various omissions,
substitutions, and modifications can be made without departing from the scope of the invention.
These embodiments and modifications thereof are included in the scope and the gist of the
invention, and are included in the invention described in the claims and the equivalent scope
thereof.
[0054]
11: resin substrate, 20: MEMS chip, 21: support portion, 22: diaphragm, 23: magnetic resistance
element, 26: hollow portion, 31, 32, 41, 42: adhesive member, 51: first magnetic layer, 52:
Intermediate layer, 53: second magnetic layer, 120: microphone, 121: pressure sensor, 122:
opening, 123: cover, 130: portable information terminal, 131: display unit, 140: blood pressure
sensor, 141: pressure sensor, 150: Touch panel 151 pressure sensor 151 e detection element
154, 155 wiring 156 control unit 156a wiring circuit 156b wiring circuit 157 control circuit.
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