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JP2017053729

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This translation is machine-generated. It cannot be guaranteed that it is intelligible, accurate,
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DESCRIPTION JP2017053729
Abstract: A pressure sensor, a microphone, a blood pressure sensor, and a touch panel capable of
improving the stability of detection. According to an embodiment, a pressure sensor includes a
holding unit, a first film unit, and a first sensing element. The first film portion includes a first
edge and a first end. The first edge portion includes a first extension portion extending along a
first direction, and a first intersection portion extending across the first direction and connected
to one end of the first extension portion. , Held by the holding unit. The first end is aligned with
the first edge along a second direction intersecting the first direction. The first film portion is
deformable. The first sensing element is fixed to the first film portion, and the first sensing
element is provided between the first magnetic layer, the first opposing magnetic layer, the first
magnetic layer, and the first opposing magnetic layer. And an intermediate layer. [Selected
figure] Figure 1
Sensor, information terminal, microphone, blood pressure sensor and touch panel
[0001]
Embodiments of the present invention relate to a pressure sensor, a microphone, a blood
pressure sensor and a touch panel.
[0002]
A pressure sensor using a magnetic layer has been proposed.
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The pressure sensor is applied to, for example, a microphone, a blood pressure sensor, a touch
panel, and the like. It is desirable to detect stably in a pressure sensor.
[0003]
JP, 2014-240824, A
[0004]
Embodiments of the present invention provide a pressure sensor, a microphone, a blood pressure
sensor and a touch panel that can improve the stability of detection.
[0005]
According to an embodiment of the present invention, the pressure sensor includes a holding
unit, a first film unit, and a first sensing element.
The first film portion includes a first edge and a first end.
The first edge portion includes a first extension portion extending along a first direction, and a
first intersection portion extending across the first direction and connected to one end of the first
extension portion. , Held by the holding unit. The first end is aligned with the first edge along a
second direction intersecting the first direction. The first film portion is deformable. The first
sensing element is fixed to the first film portion, and the first sensing element is provided
between the first magnetic layer, the first opposing magnetic layer, the first magnetic layer, and
the first opposing magnetic layer. And an intermediate layer.
[0006]
FIG. 1A to FIG. 1F are schematic views illustrating the pressure sensor according to the first
embodiment. It is a graph which shows the characteristic of a pressure sensor. FIG. 3A and FIG.
3B are schematic plan views illustrating another pressure sensor according to the first
embodiment. It is a schematic plan view which illustrates another pressure sensor concerning a
1st embodiment. It is a schematic plan view which illustrates another pressure sensor concerning
a 2nd embodiment. It is a schematic perspective view which illustrates a part of pressure sensor
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concerning an embodiment. It is a schematic perspective view which illustrates a part of another
pressure sensor which concerns on embodiment. It is a schematic perspective view which
illustrates a part of another pressure sensor which concerns on embodiment. It is a schematic
perspective view which illustrates a part of another pressure sensor which concerns on
embodiment. It is a schematic perspective view which illustrates a part of another pressure
sensor which concerns on embodiment. It is a schematic perspective view which illustrates a part
of another pressure sensor which concerns on embodiment. It is a schematic perspective view
which illustrates a part of another pressure sensor which concerns on embodiment. It is a
schematic diagram which illustrates the microphone concerning a 3rd embodiment. It is a
schematic cross section which illustrates another microphone concerning a 3rd embodiment. FIG.
15A and FIG. 15B are schematic views illustrating the blood pressure sensor according to the
fourth embodiment. It is a schematic diagram which illustrates the touch panel concerning a 5th
embodiment.
[0007]
Hereinafter, embodiments of the present invention will be described with reference to the
drawings. The drawings are schematic or conceptual, and the relationship between the thickness
and width of each part, the ratio of sizes between parts, etc. are not necessarily the same as the
actual ones. Even in the case of representing the same part, the dimensions and proportions may
differ from one another depending on the drawings. In the specification of the present
application and the drawings, the same elements as those described above with reference to the
drawings are denoted by the same reference numerals, and the detailed description will be
appropriately omitted.
[0008]
First Embodiment FIGS. 1A to 1F are schematic views illustrating a pressure sensor according to
a first embodiment. FIG. 1A is a perspective view. FIG. 1B is a cross-sectional view taken along
line A <b> 1-A <b> 2 of FIG. FIG.1 (c) is the top view seen from arrow AR of FIG. 1 (a). 1 (d) to 1
(f) are cross-sectional views illustrating a part of the pressure sensor.
[0009]
As shown in FIG. 1A, the pressure sensor 110 according to the embodiment includes a holding
unit 70s, a first film unit 71, and a first detection element 51.
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[0010]
As shown in FIG. 1C, the first film portion 71 includes a first edge 71r and a first end 71e.
The first edge 71 r is held by the holding portion 70 s. The first edge 71 r includes a first
extension 71 s and a first intersection 71 a. In this example, the first edge 71 r further includes a
first other end intersection 71 b.
[0011]
The first extending portion 71s extends along the first direction. The first direction is, for
example, the X-axis direction.
[0012]
One direction perpendicular to the X-axis direction is taken as a Y-axis direction. A direction
perpendicular to the X-axis direction and the Y-axis direction is taken as an X-axis direction.
[0013]
The first intersection 71a extends in a direction intersecting the first direction. The first
intersection 71a is connected to one end 71se of the first extension 71s. Thus, the first edge 71 r
is provided with a portion extending along the first direction and a portion extending along a
direction different from the portion.
[0014]
The first other end intersection portion 71b extends in a direction intersecting the first direction.
The first other end crossing portion 71b is connected to the other end 71sf of the first extending
portion 71s. The extension direction of the first other end intersection portion 71b intersects
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with the extension direction of the first intersection portion 71a.
[0015]
The first extending portion 71s is located between a part of the first intersection 71a and a part
of the first other end intersection 71b in the first direction.
[0016]
The first end 71 e is aligned with the first edge 71 r along a second direction intersecting the
first direction.
The second direction is, for example, orthogonal to the first direction. The second direction is, for
example, the Y-axis direction. For example, the first end 71e is aligned with the first extending
portion 71s along the second direction.
[0017]
The position of the first intersection 71a in the second direction is between the position of the
first end 71e in the second direction and the position of the first extending portion 71s in the
second direction. The position of the first other end intersection 71b in the second direction is
between the position of the first end 71e in the second direction and the position of the first
extending portion 71s in the second direction.
[0018]
The first film portion 71 is deformable. For example, the first edge 71 r of the first film portion
71 is held by the holding portion 70 s and does not substantially deform. On the other hand, the
position of the first end 71 e (for example, the position in the Z-axis direction) changes according
to the deformation of the first film portion 71. That is, the position of the first end 71e in the
direction (for example, the Z-axis direction) intersecting the first direction (Z-axis direction) and
the second direction (for example, the Y-axis direction) corresponds to the deformation of the
first film portion 71. Change.
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[0019]
The first edge 71 r is, for example, a fixed end. The first end 71 e is, for example, a free end.
[0020]
For example, a substrate to be the holding unit 70s and the first film unit 71 is provided. The
substrate is, for example, a silicon substrate. A part of the substrate is removed, and a cavity 70h
is provided in the substrate (see FIG. 1 (b)). The thin portion of the substrate becomes the first
film portion 71. The thick portion of the substrate serves as the holding portion 70s.
[0021]
The first detection element 51 is fixed to the first film unit 71. The first detection element 51 is
provided on a part of the first film unit 71. The first detection element 51 is provided, for
example, on a part of the first film unit 71.
[0022]
As shown in FIG. 1B, the first sensing element 51 includes a first magnetic layer 11a, a first
opposing magnetic layer 11b, and a first intermediate layer 11c. The first intermediate layer 11c
is provided between the first magnetic layer 11a and the first opposing magnetic layer 11b.
[0023]
The first opposing magnetic layer 11b is separated from the first magnetic layer 11a
substantially along the Z-axis direction. In this example, the first opposing magnetic layer 11 b is
provided between the first magnetic layer 11 a and the first film portion 71. In the embodiment,
the first magnetic layer 11 a may be disposed between the first opposing magnetic layer 11 b
and the first film portion 71.
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[0024]
In this example, a first electrode 58a and a second electrode 58b are provided. The first magnetic
layer 11a, the first opposing magnetic layer 11b, and the first intermediate layer 11c are
disposed between these electrodes. A current can be supplied to the stacked body of the first
magnetic layer 11a, the first opposing magnetic layer 11b, and the first intermediate layer 11c
by these electrodes. Thereby, the resistance between the first magnetic layer 11a and the first
opposing magnetic layer 11b can be detected.
[0025]
The magnetization (first magnetization) of the first magnetic layer 11 a changes in accordance
with the deformation of the first film portion 71. The first magnetic layer 11a is, for example, a
magnetization free layer.
[0026]
For example, the magnetization of the first opposing magnetic layer 11b is less likely to change
than the first magnetization of the first magnetic layer 11a. The first opposing magnetic layer 11
b is, for example, a magnetization fixed layer (for example, a reference layer).
[0027]
For example, pressure (pressure to be detected) is applied to the first film portion 71. Thereby,
distortion occurs in the magnetic layer of the first sensing element 51. The strain is, for example,
an anisotropic strain. Due to this strain, the first magnetization of the first magnetic layer 11a
changes. This change is based on, for example, the inverse magnetostrictive effect. The angle
between the direction of the first magnetization of the first magnetic layer 11a and the direction
of the magnetization of the first opposing magnetic layer 11b changes. The resistance between
the first magnetic layer 11a and the first opposing magnetic layer 11b changes. The change in
resistance is based on, for example, the magnetoresistive effect (MR effect).
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[0028]
The resistance between the first magnetic layer 11 a and the first opposing magnetic layer 11 b
changes in accordance with the deformation of the first film portion 71. By detecting a change in
resistance, the pressure applied to the first film portion 71 is detected. That is, the pressure to be
detected is detected.
[0029]
In the embodiment, the magnetization of the first opposing magnetic layer 11 b may change in
accordance with the deformation of the first film portion 71. Also at this time, the angle between
the direction of the first magnetization of the first magnetic layer 11a and the direction of the
magnetization of the first opposing magnetic layer 11b changes.
[0030]
In this example, a plurality of first detection elements 51 are provided. These sensing elements
are connected in series, for example. A high S / N ratio is obtained.
[0031]
For example, when forming the first film portion 71 and the first detection element 51, formation
of various films and heat treatment are performed. This film may have stress. Heat treatment
may also increase stress. For this reason, after forming the 1st film part 71 and the 1st sensing
element 51, the 1st film part 71 may have stress (residual stress). If residual stress is present in
the first film portion 71, the first film portion 71 may be deformed in an initial state in which no
pressure (pressure to be detected) is applied to the first film portion 71. Furthermore, when the
pressure to be detected is applied to the first film portion 71, the first film portion 71 may not be
easily deformed. The degree of deformation of the first film portion 71 with respect to the
pressure to be detected may differ depending on the degree of residual stress. For example, if the
residual stress differs among a plurality of sensors due to variations in the manufacturing
process or the like, the detection characteristics become uneven. For this reason, it is difficult to
sufficiently improve the stability of detection.
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[0032]
The influence of the residual stress is particularly large when one portion of the first film portion
71 is a fixed end and the other portion is a free end. That is, compared to the influence of the
residual stress in the case of the reference example in which the entire circumference of the film
portion is a fixed end, the influence of the residual stress in the case where the film portion has a
free end is large.
[0033]
On the other hand, in the reference example in which the entire circumference of the film portion
is a fixed end, the film portion may be broken when a large pressure (for example, a large
volume) is applied to the film portion. For this reason, it is desirable that the membrane portion
have a gap between itself and the holding portion. That is, when the membrane part includes the
fixed end and the free end, resistance to a large pressure is improved.
[0034]
At this time, as described above, in the configuration in which the film portion includes the fixed
end and the free end, the influence of the residual stress is increased. For this reason, stable
detection may be difficult.
[0035]
In the pressure sensor 110 according to the embodiment, the first edge 71r of the first film
portion 71 extends along a first direction along a portion (first extending portion 71s) and a
direction different from that portion. An extending portion (first intersection 71a) is provided.
The extending directions of these parts intersect with each other. Therefore, even when residual
stress is present in the first film portion 71, the shape of the first film portion 71 is likely to be
stable. Even in the case where the degree of residual stress differs among a plurality of sensors,
the detection sensitivity tends to be uniform. This enables stable detection.
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[0036]
As shown in FIG. 1A, in this example, the pressure sensor 110 further includes a second film
portion 72 and a second sensing element 52.
[0037]
As shown in FIG. 1C, the second film portion 72 includes a second edge 72r and a second end
72e.
The second edge 72 r includes a second extension 72 s and a second intersection 72 a. In this
example, the second edge 72 r further includes a second other end intersection 72 b.
[0038]
The second extending portion 72s extends along the first direction (for example, the X-axis
direction). The second intersection 72a extends in a direction intersecting the first direction. The
second intersection 72a is connected to one end 72se of the second extension 72s. The second
other end crossing portion 72b extends in a direction intersecting the first direction. The second
other end crossing portion 72b is connected to the other end 72sf of the second extending
portion 72s. The extending direction of the second other end crossing portion 72b intersects the
extending direction of the second crossing portion 72a.
[0039]
The second end 72 e is aligned with the second edge 72 r along the second direction (Y-axis
direction). For example, the second end 72 e is aligned with the second extension 72 s along the
second direction.
[0040]
The second extending portion 72s is located between a part of the second intersection 72a and a
part of the second other end intersection 72b in the first direction (for example, the X-axis
direction).
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[0041]
The position of the second intersection 72a in the second direction is between the position of the
second end 72e in the second direction and the position of the second extending portion 72s in
the second direction.
The position of the second other end intersection 72b in the second direction is between the
position of the second end 72e in the second direction and the position of the second extending
portion 72s in the second direction.
[0042]
In this example, the second intersecting portion 72a of the second film portion 72 is aligned with
the first intersecting portion 71a of the first film portion 71 in the second direction. The second
other end crossing portion 72 b of the second film portion 72 is aligned with the first other end
crossing portion 71 b of the first film portion 71 in the second direction.
[0043]
In this example, in the Y-axis direction, the first edge 71 r, the first end 71 e, the second end 72
e, and the second edge 72 r are arranged in this order. The position of the first end 71e in the
second direction (Y-axis direction) is between the position of the first edge 71r in the second
direction and the position of the second edge 72r in the second direction. The position of the
second end 72e in the second direction is between the position of the first end 71e in the second
direction and the position of the second edge 72r in the second direction. The second end 72e is
separated from the first end 72e.
[0044]
In this example, the length of the second extension 72s is substantially the same as the length of
the first extension 71s.
[0045]
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The second film portion 72 is deformable.
The second edge 72 r is, for example, a fixed end. The second end 72 e is, for example, a free
end.
[0046]
As shown in FIG. 1A, the second detection element 52 is fixed to the second film portion 72. In
this example, a plurality of second detection elements 52 are provided. These sensing elements
are connected in series, for example.
[0047]
As shown in FIG. 1D, the second sensing element 52 includes a second magnetic layer 12a, a
second opposing magnetic layer 12b, and a second intermediate layer 12c. The second
intermediate layer 12c is provided between the second magnetic layer 12a and the second
opposing magnetic layer 12b. For example, the magnetization of the second magnetic layer 12 a
changes in accordance with the deformation of the second film portion 72. The second magnetic
layer 12a is, for example, a magnetization free layer. The magnetization of the second opposing
magnetic layer 12b is less likely to change than the magnetization of the second magnetic layer
12a. The second opposing magnetic layer 12 b is, for example, a magnetization fixed layer (for
example, a reference layer).
[0048]
The pressure to be detected is applied to the second film portion 72, and the second film portion
72 is deformed. The angle between the magnetization of the second magnetic layer 12 a and the
magnetization of the second opposing magnetic layer 12 b changes in accordance with the
deformation of the second film portion 72. The resistance between the second magnetic layer 12
a and the second opposing magnetic layer 12 b changes in accordance with the deformation of
the second film portion 72.
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[0049]
The second edge 72 r of the second film portion 72 is provided with a second extending portion
72 s extending in the first direction and a second intersecting portion 72 a. The extending
directions of these parts intersect with each other. Therefore, even when residual stress exists in
the second film portion 72, the shape of the second film portion 72 is likely to be stable. This
enables stable detection.
[0050]
As shown in FIG. 1A, in this example, the pressure sensor 110 further includes a third film unit
73 and a third sensing element 53.
[0051]
As shown in FIG. 1C, the third film portion 73 includes a third edge 73r and a third end 73e.
The third edge 73 r includes a third extension 73 s and a third intersection 73 a. The third
extending portion 73s extends along a third direction intersecting the first direction. The third
intersection 73a extends in a direction intersecting the third direction, and is connected to one
end 73se of the third extension 73s. The third edge portion 73r is held by the holding portion
70s. In this example, the third direction is along the second direction (for example, the Y-axis
direction).
[0052]
In this example, the third edge 73 r further includes a third other end intersection 73 b. The third
other end crossing portion 73b extends in a direction crossing the third direction, and is
connected to the other end 73sf of the third extending portion 73s. The extending direction of
the third other end crossing portion 73b intersects the extending direction of the third crossing
portion 73a. The third extending portion 73s is located between a portion of the third
intersection portion 73a and a portion of the third other end intersection portion 73b in the third
direction.
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[0053]
The third end 73 e is aligned with the third edge 73 r along a fourth direction intersecting the
third direction. The third end portion 73e is aligned with the third extending portion 73s along a
fourth direction intersecting the third direction. The fourth direction is, for example, along the
first direction (X-axis direction). The third film unit 73 is deformable.
[0054]
As described above, in this example, the second intersecting portion 72a of the second film
portion 72 is aligned with the first intersecting portion 71a of the first film portion 71 in the
second direction.
[0055]
The position of the third extending portion 73s in the second direction is between the position in
the second direction of at least a portion of the first intersection portion 71a and the position in
the second direction of at least a portion of the second intersection portion 72a. It is in.
The position of the third intersection 73a in the second direction is between the position of the
third extension 73s in the second direction and the position of at least a portion of the first
intersection 71a in the second direction. The position of the third other end intersection 73b in
the second direction is between the position of the third extension 73s in the second direction
and the position of at least a portion of the second intersection 72a in the second direction. . The
third end 73e is separated from the first end 71e and the second end 72e. The third end 73e is
located between the first extension 71s and the second extension 72s.
[0056]
The third portion 73 is deformable. The third edge 73 r is, for example, a fixed end. The third end
73 e is, for example, a free end.
[0057]
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As shown in FIG. 1A, the third detection element 53 is fixed to the third film portion 73. In this
example, a plurality of third detection elements 53 are provided. These sensing elements are
connected in series, for example.
[0058]
As shown in FIG. 1 (e), the third sensing element 53 is provided between the third magnetic layer
13a, the third opposing magnetic layer 13b, and the third magnetic layer 13a and the third
opposing magnetic layer 13b. And the third intermediate layer 13c.
[0059]
The third magnetic layer 13a is, for example, a magnetization free layer.
The third opposing magnetic layer 13 b is, for example, a magnetization fixed layer (for example,
a reference layer). The pressure to be detected is applied to the third film portion 73, and the
third film portion 73 is deformed. The angle between the magnetization of the third magnetic
layer 13 a and the magnetization of the third opposing magnetic layer 13 b changes in
accordance with the deformation of the third film portion 73. The resistance between the third
magnetic layer 13 a and the third opposing magnetic layer 13 b changes in accordance with the
deformation of the third film portion 73.
[0060]
For example, even when residual stress is present in the third film portion 73, the shape of the
third film portion 73 tends to be stable. This enables stable detection.
[0061]
As shown in FIG. 1A, in this example, the pressure sensor 110 further includes a fourth film unit
74 and a fourth sensing element 54.
[0062]
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As shown in FIG. 1 (c), the fourth film portion 74 includes a fourth edge 74r and a fourth end
74e.
The fourth edge 74 r includes a fourth extension 74 s and a fourth intersection 74 a. The fourth
extending portion 74s extends along the third direction. In this example, the third direction is
along the second direction. The fourth crossing portion 74 a extends in the third direction and is
connected to one end 74 se of the fourth extending portion 74 s. The fourth edge 74r is held by
the holding portion 70s.
[0063]
In this example, the fourth edge 74 r further includes a fourth other end intersection 74 b. The
fourth other end intersection portion 74b extends to intersect the third direction, and is
connected to the other end 74sf of the fourth extending portion 74s. The extending direction of
the fourth other end crossing portion 74b intersects with the extending direction of the fourth
crossing portion 74a.
[0064]
The fourth extending portion 74s is located between a portion of the fourth intersecting portion
74a and a portion of the fourth other end intersecting portion 74b in the third direction.
[0065]
In this example, the length of the fourth extending portion 74s is substantially the same as the
length of the third extending portion 73s.
[0066]
The fourth end 74 e is aligned with the fourth edge 74 r in the fourth direction.
The fourth end 74 e is aligned with the fourth extending portion 74 s along the fourth direction.
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The fourth direction is, for example, along the first direction (X-axis direction). The fourth film
portion 74 is deformable.
[0067]
The position of the third end 73 e of the third film portion 73 in the fourth direction (for
example, the X-axis direction) is the position of the third edge 74 r of the third film portion 73 in
the fourth direction And the position of the fourth edge 74 r in the fourth direction. The position
of the fourth end 74 e in the fourth direction is between the position of the third end 73 e in the
fourth direction and the position of the fourth edge 74 r in the fourth direction. The fourth end
74e is separated from the third end 73e. The fourth end 74e is separated from the first end 71e
and the second end 72e.
[0068]
The fourth film portion 74 is deformable. The fourth edge 74 r is, for example, a fixed end. The
fourth end 74 e is, for example, a free end.
[0069]
As shown in FIG. 1A, the fourth detection element 54 is fixed to the fourth film unit 74. In this
example, a plurality of fourth detection elements 54 are provided. These sensing elements are
connected in series, for example.
[0070]
As shown in FIG. 1 (f), the fourth sensing element 54 is provided between the fourth magnetic
layer 14a, the fourth opposing magnetic layer 14b, and the fourth magnetic layer 14a and the
fourth opposing magnetic layer 14b. And the fourth intermediate layer 14c.
[0071]
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The fourth magnetic layer 14a is, for example, a magnetization free layer.
The fourth opposing magnetic layer 14 b is, for example, a magnetization fixed layer (for
example, a reference layer). The pressure to be detected is applied to the fourth film portion 74,
and the fourth film portion 74 is deformed. The angle between the magnetization of the fourth
magnetic layer 14 a and the magnetization of the fourth opposing magnetic layer 14 b changes
in accordance with the deformation of the fourth film portion 74. The resistance between the
fourth magnetic layer 14 a and the fourth opposing magnetic layer 14 b changes in accordance
with the deformation of the fourth film portion 74.
[0072]
For example, even when residual stress is present in the fourth film portion 74, the shape of the
fourth film portion 74 tends to be stable. This enables stable detection.
[0073]
As described above, in the pressure sensor 110 of this example, four film portions are provided.
In the embodiment, the number of film parts is arbitrary.
[0074]
In this example, in the membrane portion, the width of the fixed end is wider than the width of
the free end. Each of the plurality of membrane portions extends from the fixed end toward the
free end such that the ends of the plurality of membrane portions gather at one point.
[0075]
For example, the width along the first direction (for example, the X-axis direction) of the first film
portion 71 decreases from the first edge 71 r toward the first end 71 e. The width along the first
direction of the second film portion 72 decreases toward the second edge 72 r and the second
end 72 e. The width along the third direction (the Y-axis direction in this example) of the third
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film portion 73 decreases from the third edge 73 r toward the third end 73 e. The width of the
fourth film portion 74 in the third direction decreases from the fourth edge 74 r toward the
fourth end 74 e.
[0076]
The length along the first direction (for example, the X-axis direction) of the first end 71 e is
shorter than the length along the first direction of the first extension 71 s. The length along the
first direction of the second end 72 e is shorter than the length along the first direction of the
second extension 72 s. The length along the third direction (for example, the Y-axis direction) of
the third end 73 e is shorter than the length along the third direction of the third extending
portion 73 s. The length in the third direction of the fourth end 74 e is shorter than the length in
the third direction of the fourth extending portion 74 s.
[0077]
For example, an interval (interval g1) between the first film unit 71 and the second film unit 72 is
substantially constant. For example, a line connecting the end of the first intersection 71a of the
first film portion 71 and the first end 71e of the first film 71 is the end of the third intersection
73a of the third film 73, and And a third end 73 e of the third film portion 73. These lines are
substantially parallel to one another.
[0078]
The interval g1 is, for example, 0.1 μm or more and 3 μm or less. The gap g1 may be, for
example, 1 μm or less. If the gap g1 is excessively large, the pressure may not be sufficiently
applied to the membrane part. If the gap g1 is too small, manufacture becomes difficult and it
becomes difficult to obtain stable characteristics.
[0079]
As described later, when pressure is applied to the film portion, a large strain (anisotropic strain)
occurs in the vicinity of the edge (fixed end) of the film portion. In the embodiment, by arranging
04-05-2019
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the sensing element in the vicinity of the edge of the film portion, a large strain is added to the
sensing element, and high sensitivity can be obtained.
[0080]
For example, the plurality of first detection elements 51 are arranged along the first edge 71 r.
For example, the distance between the first sensing element 51 and the first edge 74r is shorter
than the distance between the first sensing element 51 and the first end 71e.
[0081]
As shown in FIG. 1C, for example, the first detection element 51 has a center 51c in the second
direction (Y-axis direction). A distance d51 along the second direction between the center 51c
and the first extending portion 71s is 1/1/1 of a distance d71 along the second direction
between the first end 71e and the first extending portion 71s. 2 or less. The distance d51 may be
1⁄5 of the distance d71. The distance d51 may be 1/10 of the distance d71. By providing the
first detection element 51 in the vicinity of the first extending portion 71s, high sensitivity
detection can be performed.
[0082]
For example, the position of at least a part of the first detection element 51 in the second
direction (for example, the Y-axis direction) may overlap the position of at least a part of the first
intersection 71a in the second direction.
[0083]
The position of at least a part of the first detection element 51 in the second direction (for
example, the Y-axis direction) is the position of at least a part of the first intersection 71a in the
second direction, and the second direction of the first end 71e. It may be between the position of
[0084]
As shown in FIG. 1 (c), for example, the intersection of the film portions is curvilinear.
04-05-2019
20
This improves the strength of the film portion.
The yield is improved and the productivity is improved.
[0085]
For example, at least one of the first intersection 71a and the first other end intersection 71b
may include a curved portion. At least one of the second intersection 72a and the second other
end intersection 72b may include a curved portion. At least one of the third intersection 73a and
the third other end intersection 73b may include a curved portion. At least one of the fourth
crossing portion 74a and the fourth other end crossing portion 74b may include a curved
portion.
[0086]
FIG. 2 is a graph showing the characteristics of the pressure sensor. FIG. 2 shows the “strain
anisotropy inclination” of the film part when the film part has a film stress σ (for example,
residual stress). In this example, a predetermined pressure ± 1 Pa is applied to the membrane
part. The horizontal axis in FIG. 2 is a relative position Py in the Y-axis direction. The vertical axis
is the strain anisotropy slope S1. The strain anisotropy slope S1 is a rate of change of the
anisotropic strain with respect to the applied pressure (change of ± 1 Pa). The anisotropic strain
is a strain of a first strain (maximum principal strain) in one direction and a second strain
(minimum principal strain) in another direction (direction orthogonal to the direction of the first
strain). It is a difference. When the strain anisotropy slope S1 is large, the sensitivity is high. In
FIG. 2, the strain anisotropy slope S1 is shown as a relative value.
[0087]
FIG. 2 shows the results when the membrane stress σ of the membrane portion is 0 MPa, 10
MPa or 50 MPa. When the film stress σ is 0 MPa, this corresponds to the application of a stress
of ± 1 Pa. The difference between the first strain and the second strain at that time corresponds
to the strain anisotropy slope S1.
04-05-2019
21
[0088]
As shown in FIG. 2, when the film stress σ changes, the strain anisotropy slope S1 changes. At
this time, in a region where the distance between the position Py and the first edge 71r is shorter
than the distance between the position Py and the first end 71e, the film stress σ is 0 MPa, 10
MPa or 50 MPa. In any case, a high strain anisotropy slope S1 is obtained. It is desirable to
arrange the sensing element 50 in such a region.
[0089]
For example, the distance along the second direction between the center 51c of the first
detection element 51 in the second direction (Y-axis direction) and the first end 71e is the
distance between the first end 71e and the first extension 0.5 times or more and 0.9 times or less
the distance d71 along the second direction with the portion 71s. This distance may be 0.8 or
more times the distance d71. This distance may be 0.85 or more times the distance d71. By
providing the first detection element 51 at such a position, high sensitivity detection can be
performed.
[0090]
FIG. 3A and FIG. 3B are schematic plan views illustrating another pressure sensor according to
the first embodiment. As shown in FIG. 3A, in another pressure sensor 111 according to the
present embodiment, the intersection extends linearly. Other than this, it is the same as that of
the pressure sensor 110.
[0091]
For example, the first intersection 71a, the first other intersection 71b, the second intersection
72a, the second other intersection 72b, the third intersection 73a, the third other intersection
73b, the fourth intersection 74a, And, the fourth other end crossing portion 74b, at least one
may include a linear portion.
[0092]
04-05-2019
22
As shown in FIG. 3B, in another pressure sensor 112 according to the present embodiment, a
first sensing element 51 and a second sensing element 52 are provided, and a third sensing
element 53 and a fourth sensing element 54 are provided. It is omitted.
Other than this, it is the same as that of the pressure sensor 110.
[0093]
For example, the length of the first extension 71s of the first film portion 71 in which the first
detection element 51 is provided is greater than the length of the third extension 73s of the third
film portion 73 in which the third detection element 53 is provided. Too long. The sensing
element may be provided on the film portion having a long extension.
[0094]
FIG. 4 is a schematic plan view illustrating another pressure sensor according to the first
embodiment. As shown in FIG. 4, in another pressure sensor 113 according to the present
embodiment, the length of the first extension portion 71 s of the first film portion 71 provided
with the first detection element 51 is the third detection element 53. Is substantially the same as
the length of the third extending portion 73s of the third film portion 73 provided with. Other
than this, it is the same as that of the pressure sensor 110.
[0095]
The pressure sensors 111 to 113 can also provide a pressure sensor that can improve the
stability of detection.
[0096]
Second Embodiment FIG. 5 is a schematic plan view illustrating another pressure sensor
according to a second embodiment.
04-05-2019
23
As shown in FIG. 5, in another pressure sensor 120 according to the second embodiment, the
first edge 71 r of the first film portion 71 includes a first extending portion 71 s and a first
intersecting portion 71 a, It does not include the first other end crossing portion 71b. The second
edge 72 r of the second film portion 72 includes the second extending portion 72 s and the
second crossing portion 72 a and does not include the second other end crossing portion 72 b.
The third edge 71 r does not include the third other end crossing portion 73 b. The fourth edge
74 r does not include the fourth other end crossing portion 74 b. Other than this, it is the same
as that of the pressure sensor 110.
[0097]
The pressure sensor 120 can also provide a pressure sensor that can improve the stability of
detection.
[0098]
Hereinafter, examples of sensing elements used in the first and second embodiments will be
described.
In the following description, the description of “material A / material B” indicates a state in
which the layer of material B is provided on the layer of material A.
[0099]
FIG. 6 is a schematic perspective view illustrating a part of the pressure sensor according to the
embodiment. As shown in FIG. 6, in the sensing element 50A, the lower electrode 204, the
underlayer 205, the pinning layer 206, the second magnetization fixed layer 207, the magnetic
coupling layer 208, the first magnetization fixed layer 209, and the middle The layer 203, the
magnetization free layer 210, the cap layer 211, and the upper electrode 212 are arranged in
this order. The first magnetization fixed layer 209 corresponds to, for example, one of the first to
fourth opposing magnetic layers 11 b to 14 b. The magnetization free layer 210 corresponds to,
for example, any of the first to fourth magnetic layers 11a to 14a. The intermediate layer 203
corresponds to any one of the first to fourth intermediate layers 11c to 14c. The lower electrode
204 corresponds to, for example, the second electrode 58 b. The upper electrode 212
corresponds to, for example, the first electrode 58a. The sensing element 50A is, for example, a
bottom spin valve type.
04-05-2019
24
[0100]
For the base layer 205, for example, a laminated film (Ta / Ru) of tantalum and ruthenium is
used. The thickness (length in the Z-axis direction) of this Ta layer is, for example, 3 nanometers
(nm). The thickness of this Ru layer is, for example, 2 nm. For the pinning layer 206, for example,
an IrMn layer with a thickness of 7 nm is used. For the second magnetization fixed layer 207, for
example, a Co 75 Fe 25 layer with a thickness of 2.5 nm is used. For the magnetic coupling layer
208, for example, a Ru layer with a thickness of 0.9 nm is used. For the first magnetization fixed
layer 209, for example, a Co 40 Fe 40 B 20 layer with a thickness of 3 nm is used. For the
intermediate layer 203, for example, an MgO layer having a thickness of 1.6 nm is used. For the
magnetization free layer 210, for example, 4 nm thick Co 40 Fe 40 B 20 is used. For the cap
layer 211, for example, Ta / Ru is used. The thickness of this Ta layer is, for example, 1 nm. The
thickness of this Ru layer is, for example, 5 nm.
[0101]
For the lower electrode 204 and the upper electrode 212, for example, at least one of aluminum
(Al), aluminum-copper alloy (Al-Cu), copper (Cu), silver (Ag), and gold (Au) is used. By using such
a material having a relatively small electric resistance as the lower electrode 204 and the upper
electrode 212, current can be efficiently supplied to the sensing element 50A. Nonmagnetic
materials are used for the lower electrode 204 and the upper electrode 212.
[0102]
The lower electrode 204 and the upper electrode 212 are, for example, an underlayer (not
shown) for the lower electrode 204 and the upper electrode 212, a cap layer (not shown) for the
lower electrode 204 and the upper electrode 212, and the like And at least one of Al, Al-Cu, Cu,
Ag, and Au. For example, tantalum (Ta) / copper (Cu) / tantalum (Ta) or the like is used for the
lower electrode 204 and the upper electrode 212. By using Ta as a base layer of the lower
electrode 204 and the upper electrode 212, for example, adhesion between the substrate (for
example, a film portion) and the lower electrode 204 and the upper electrode 212 is improved.
As a base layer for the lower electrode 204 and the upper electrode 212, titanium (Ti), titanium
nitride (TiN), or the like may be used.
04-05-2019
25
[0103]
By using Ta as a cap layer of the lower electrode 204 and the upper electrode 212, oxidation of
copper (Cu) or the like under the cap layer is suppressed. As a cap layer for the lower electrode
204 and the upper electrode 212, titanium (Ti), titanium nitride (TiN), or the like may be used.
[0104]
For the base layer 205, for example, a laminated structure including a buffer layer (not shown)
and a seed layer (not shown) is used. The buffer layer relieves, for example, surface roughness of
the lower electrode 204, the film portion, and the like, and improves the crystallinity of the layer
stacked on the buffer layer. The buffer layer is, for example, at least one selected from the group
consisting of tantalum (Ta), titanium (Ti), vanadium (V), tungsten (W), zirconium (Zr), hafnium
(Hf) and chromium (Cr). Is used. As the buffer layer, an alloy containing at least one material
selected from these materials may be used.
[0105]
The thickness of the buffer layer in the base layer 205 is preferably 1 nm or more and 10 nm or
less. The thickness of the buffer layer is more preferably 1 nm or more and 5 nm or less. If the
thickness of the buffer layer is too thin, the buffer effect is lost. When the thickness of the buffer
layer is too thick, the thickness of the sensing element 50A becomes excessively thick. A seed
layer is formed on the buffer layer, for example, the seed layer has a buffer effect. In this case,
the buffer layer may be omitted. For the buffer layer, for example, a Ta layer having a thickness
of 3 nm is used.
[0106]
The seed layer in the base layer 205 controls the crystal orientation of the layer stacked on the
seed layer. The seed layer controls the grain size of the layer laminated on the seed layer. As this
seed layer, fcc structure (face-centered cubic structure: face-centered cubic lattice structure), hcp
structure (hexagonal close-packed structure: hexagonal close-packed lattice structure) or bcc
structure (body-centered cubic structure: body-centered cubic lattice) Metal of the structure) is
04-05-2019
26
used.
[0107]
By using ruthenium (Ru) of hcp structure, NiFe of fcc structure, or Cu of fcc structure as the seed
layer of the underlayer 205, for example, the crystal orientation of the spin valve film on the seed
layer is determined. It can be fcc (111) oriented. For the seed layer, for example, a Cu layer with a
thickness of 2 nm or a Ru layer with a thickness of 2 nm is used. When the crystal orientation of
the layer formed on the seed layer is to be enhanced, the thickness of the seed layer is preferably
1 nm or more and 5 nm or less. The thickness of the seed layer is more preferably 1 nm or more
and 3 nm or less. Thereby, the function as a seed layer which improves crystal orientation is fully
exhibited.
[0108]
On the other hand, for example, when it is not necessary to crystallize the layer formed on the
seed layer (for example, when forming an amorphous magnetization free layer), the seed layer
may be omitted. As a seed layer, for example, a Cu layer having a thickness of 2 nm is used.
[0109]
The pinning layer 206 applies unidirectional anisotropy (unidirectional anisotropy) to the second
magnetization fixed layer 207 (ferromagnetic layer) formed on the pinning layer 206, for
example. Fix the magnetization. For the pinning layer 206, for example, an antiferromagnetic
layer is used. For the pinning layer 206, for example, Ir-Mn, Pt-Mn, Pd-Pt-Mn, Ru-Mn, Rh-Mn, RuRh-Mn, Fe-Mn, Ni-Mn, Cr-Mn-Pt and At least one selected from the group consisting of Ni-O is
used. Selected from the group consisting of Ir-Mn, Pt-Mn, Pd-Pt-Mn, Ru-Mn, Rh-Mn, Ru-Rh-Mn,
Fe-Mn, Ni-Mn, Cr-Mn-Pt and Ni-O An alloy in which an additional element is further added to at
least one of the above may be used. The thickness of the pinning layer 206 is appropriately set.
This provides, for example, a sufficiently strong unidirectional anisotropy.
[0110]
04-05-2019
27
For example, heat treatment is performed while applying a magnetic field. Thereby, for example,
the magnetization of the ferromagnetic layer in contact with the pinning layer 206 is fixed. The
magnetization of the ferromagnetic layer in contact with the pinning layer 206 is fixed in the
direction of the magnetic field applied during the heat treatment. The heat treatment
temperature (annealing temperature) is, for example, equal to or higher than the magnetization
fixation temperature of the antiferromagnetic material used for the pinning layer 206. When an
antiferromagnetic layer containing Mn is used, Mn may diffuse into a layer other than the
pinning layer 206 to reduce the MR ratio. The heat treatment temperature is preferably set to a
temperature at which the diffusion of Mn occurs. The heat treatment temperature is, for example,
200 ° C. or more and 500 ° C. or less. The heat treatment temperature is, for example,
preferably 250 ° C. or more and 400 ° C. or less.
[0111]
When PtMn or PdPtMn is used as the pinning layer 206, the thickness of the pinning layer 206
is preferably 8 nm or more and 20 nm or less. The thickness of the pinning layer 206 is more
preferably 10 nm or more and 15 nm or less. When IrMn is used as the pinning layer 206,
unidirectional anisotropy can be imparted with a thinner thickness than when PtMn is used as
the pinning layer 206. In this case, the thickness of the pinning layer 206 is preferably 4 nm or
more and 18 nm or less. The thickness of the pinning layer 206 is more preferably 5 nm or more
and 15 nm or less. For the pinning layer 206, for example, an Ir 22 Mn 78 layer with a thickness
of 7 nm is used.
[0112]
A hard magnetic layer may be used as the pinning layer 206. As the hard magnetic layer, for
example, Co-Pt, Fe-Pt, Co-Pd, or Fe-Pd may be used. In these materials, for example, magnetic
anisotropy and coercivity are relatively high. These materials are hard magnetic materials. As the
pinning layer 206, Co-Pt, Fe-Pt, Co-Pd, or an alloy obtained by adding an additional element to
Fe-Pd may be used. For example, CoPt (Co ratio is 50 at. % Or more and 85 at. % Or less),
(CoxPt100-x) 100-yCry (x is 50 at. % Or more and 85 at. % Or less, y is 0 at. % Or more 40 at. %
Or less) or FePt (the ratio of Pt is 40 at. % Or more 60 at. %) Or the like may be used.
[0113]
04-05-2019
28
In the second magnetization fixed layer 207, for example, a Co x Fe 100-x alloy (x is 0 at. % To
100 at. % Or less) or a Ni x Fe 100-x alloy (x is 0 at.%). % To 100 at. %) Is used. Materials
obtained by adding nonmagnetic elements to these materials may be used. As the second
magnetization fixed layer 207, for example, at least one selected from the group consisting of Co,
Fe, and Ni is used. As the second magnetization fixed layer 207, an alloy containing at least one
material selected from these materials may be used. As the second magnetization fixed layer 207,
a (CoxFe100-x) 100-yBy alloy (x is 0 at. % To 100 at. % Or less, y is 0 at. % To 30 at. % Or less)
can also be used. By using an amorphous alloy of (Co x Fe 100 -x) 100 -y B y as the second
magnetization fixed layer 207, it is possible to suppress the variation in the characteristics of the
sensing element 50A even when the size of the sensing element is small. Can.
[0114]
The thickness of the second magnetization fixed layer 207 is preferably, for example, 1.5 nm or
more and 5 nm or less. Thereby, for example, the strength of the unidirectional anisotropic
magnetic field by the pinning layer 206 can be made stronger. For example, increasing the
strength of the antiferromagnetic coupling magnetic field between the second magnetization
fixed layer 207 and the first magnetization fixed layer 209 via the magnetic coupling layer
formed on the second magnetization fixed layer 207. Can. For example, it is preferable that the
magnetic film thickness of the second magnetization fixed layer 207 (product of saturated
magnetization Bs and thickness t (Bs · t)) be substantially equal to the magnetic film thickness of
the first magnetization fixed layer 209 .
[0115]
The saturation magnetization of Co 40 Fe 40 B 20 in a thin film is about 1.9 T (Tesla). For
example, when a 3 nm thick Co 40 Fe 40 B 20 layer is used as the first magnetization fixed layer
209, the magnetic thickness of the first magnetization fixed layer 209 is 1.9 T × 3 nm, 5.7 T nm,
Become. On the other hand, the saturation magnetization of Co 75 Fe 25 is about 2.1 T. The
thickness of the second magnetization fixed layer 207 at which the magnetic film thickness equal
to the above is obtained is 5.7 Tnm / 2.1T, which is 2.7 nm. In this case, as the second
magnetization fixed layer 207, it is preferable to use a Co 75 Fe 25 layer having a thickness of
about 2.7 nm. As the second magnetization fixed layer 207, for example, a Co 75 Fe 25 layer
with a thickness of 2.5 nm is used.
[0116]
04-05-2019
29
In the sensing element 50A, a synthetic pin structure is used by the second magnetization fixed
layer 207, the magnetic coupling layer 208, and the first magnetization fixed layer 209. Instead,
a single pin structure of one magnetization fixed layer may be used. When a single pin structure
is used, for example, a Co 40 Fe 40 B 20 layer with a thickness of 3 nm is used as the
magnetization fixed layer. The same material as the material of the second magnetization fixed
layer 207 described above may be used as the ferromagnetic layer used for the magnetization
fixed layer of the single pin structure.
[0117]
The magnetic coupling layer 208 causes antiferromagnetic coupling between the second
magnetization fixed layer 207 and the first magnetization fixed layer 209. The magnetic coupling
layer 208 forms a synthetic pin structure. As a material of the magnetic coupling layer 208, for
example, Ru is used. The thickness of the magnetic coupling layer 208 is preferably, for example,
0.8 nm or more and 1 nm or less. A material other than Ru may be used as the magnetic coupling
layer 208 as long as it is a material that causes sufficient antiferromagnetic coupling between the
second magnetization fixed layer 207 and the first magnetization fixed layer 209. The thickness
of the magnetic coupling layer 208 is set to, for example, a thickness of 0.8 nm or more and 1
nm or less corresponding to a second peak (2nd peak) of RKKY (Ruderman-Kittel-Kasuya-Yosida)
bonding. Furthermore, the thickness of the magnetic coupling layer 208 may be set to a
thickness of 0.3 nm or more and 0.6 nm or less corresponding to the first peak (1st peak) of the
RKKY bond. As a material of the magnetic coupling layer 208, for example, Ru having a thickness
of 0.9 nm is used. Thereby, a reliable connection can be obtained more stably.
[0118]
The magnetic layer used for the first magnetization fixed layer 209 directly contributes to the
MR effect. As the first magnetization fixed layer 209, for example, a Co-Fe-B alloy is used.
Specifically, as the first magnetization fixed layer 209, a (CoxFe100-x) 100-yBy alloy (x is 0 at. %
To 100 at. % Or less, y is 0 at. % To 30 at. % Or less) can also be used. In the case where an
amorphous alloy of (Co x Fe 100 -x) 100 -y B y is used as the first magnetization fixed layer 209,
for example, even when the size of the sensing element 50A is small, an element caused by
crystal grains It is possible to suppress the variation between them.
04-05-2019
30
[0119]
A layer (for example, a tunnel insulating layer (not shown)) formed on the first magnetization
fixed layer 209 can be planarized. Planarization of the tunnel insulating layer can reduce the
defect density of the tunnel insulating layer. This results in a higher MR ratio with lower areal
resistance. For example, in the case of using MgO as the material of the tunnel insulating layer, it
is possible to use an amorphous alloy of (CoxFe100-x) 100-yBy as the first magnetization fixed
layer 209 on the tunnel insulating layer. The (100) orientation of the MgO layer to be formed can
be intensified. By making the (100) orientation of the MgO layer higher, a larger MR change rate
can be obtained. The (Co x Fe 100 -x) 100 -y B y alloy crystallizes with the (100) plane of the
MgO layer as a template during annealing. Therefore, good crystal matching between MgO and
the (CoxFe100-x) 100-yBy alloy can be obtained. By obtaining a good crystal alignment, a larger
MR ratio can be obtained.
[0120]
As the first magnetization fixed layer 209, for example, an Fe--Co alloy may be used other than
the Co--Fe--B alloy.
[0121]
When the first magnetization fixed layer 209 is thicker, a larger MR ratio is obtained.
If the first magnetization fixed layer 209 is thin, for example, a larger fixed magnetic field can be
obtained. There is a trade-off relationship in the thickness of the first magnetization fixed layer
209 between the MR ratio and the fixed magnetic field. When a Co̶Fe̶B alloy is used as the
first magnetization fixed layer 209, the thickness of the first magnetization fixed layer 209 is
preferably 1.5 nm or more and 5 nm or less. The thickness of the first magnetization fixed layer
209 is more preferably 2.0 nm or more and 4 nm or less.
[0122]
For the first magnetization fixed layer 209, in addition to the above-described materials, a Co 90
Fe 10 alloy of fcc structure, Co of hcp structure, or Co alloy of hcp structure is used. As the first
magnetization fixed layer 209, for example, at least one selected from the group consisting of Co,
04-05-2019
31
Fe, and Ni is used. As the first magnetization fixed layer 209, an alloy containing at least one
material selected from these materials is used. By using, as the first magnetization fixed layer
209, a FeCo alloy material of bcc structure, a Co alloy containing 50% or more of cobalt
composition, or a material of 50% or more of Ni composition (Ni alloy), for example, a larger MR
The rate of change is obtained.
[0123]
As the first magnetization fixed layer 209, for example, Co 2 MnGe, Co 2 FeGe, Co 2 MnSi, Co 2
FeSi, Co 2 MnAl, Co 2 FeAl, Co 2 MnGa 0.5 Ge 0.5, and Co 2 FeGa A Heusler magnetic alloy layer
such as 0.5 Ge 0.5 can also be used. For example, a Co 40 Fe 40 B 20 layer with a thickness of 3
nm is used as the first magnetization fixed layer 209, for example.
[0124]
The intermediate layer 203 breaks the magnetic coupling between the first magnetization fixed
layer 209 and the magnetization free layer 210, for example.
[0125]
As a material of the intermediate layer 203, for example, a metal, an insulator or a semiconductor
is used.
As the metal, for example, Cu, Au or Ag is used. When a metal is used as the intermediate layer
203, the thickness of the intermediate layer is, for example, about 1 nm or more and 7 nm or
less. As this insulator or semiconductor, for example, magnesium oxide (such as MgO), aluminum
oxide (such as Al2O3), titanium oxide (such as TiO), zinc oxide (such as ZnO), or gallium oxide
(such as Ga- O) etc. are used. When an insulator or a semiconductor is used as the intermediate
layer 203, the thickness of the intermediate layer 203 is, for example, about 0.6 nm or more and
2.5 nm or less. As the intermediate layer 203, for example, a CCP (Current-Confined-Path) spacer
layer may be used. When a CCP spacer layer is used as a spacer layer, for example, a structure in
which a copper (Cu) metal path is formed in an insulating layer of aluminum oxide (Al2O3) is
used. For example, a MgO layer with a thickness of 1.6 nm is used as the intermediate layer.
[0126]
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32
A ferromagnetic material is used for the magnetization free layer 210. For the magnetization free
layer 210, for example, a ferromagnetic material containing Fe, Co, Ni is used. As a material of
the magnetization free layer 210, for example, a FeCo alloy, a NiFe alloy or the like is used.
Furthermore, in the magnetization free layer 210, a Co-Fe-B alloy, an Fe-Co-Si-B alloy, an Fe-Ga
alloy having a large λs (magnetostriction constant), an Fe-Co-Ga alloy, a Tb-M-Fe alloy , Tb-M1Fe-M2 alloy, Fe-M3-M4-B alloy, Ni, Fe-Al, or ferrite is used. In these materials, for example, λs
(magnetostriction constant) is large. In the above-mentioned Tb-M-Fe alloy, M is at least one
selected from the group consisting of Sm, Eu, Gd, Dy, Ho and Er. In the above-mentioned Tb-M1Fe-M2 alloy, M1 is at least one selected from the group consisting of Sm, Eu, Gd, Dy, Ho and Er.
M2 is at least one selected from the group consisting of Ti, Cr, Mn, Co, Cu, Nb, Mo, W and Ta. In
the above Fe-M3-M4-B alloy, M3 is at least one selected from the group consisting of Ti, Cr, Mn,
Co, Cu, Nb, Mo, W and Ta. M4 is at least one selected from the group consisting of Ce, Pr, Nd, Sm,
Tb, Dy and Er. As said ferrite, Fe3O4, (FeCo) 3O4 etc. are mentioned. The thickness of the
magnetization free layer 210 is, for example, 2 nm or more.
[0127]
The magnetic free layer 210 may be made of a magnetic material containing boron. For the
magnetization free layer 210, for example, an alloy containing at least one element selected from
the group consisting of Fe, Co and Ni and boron (B) may be used. For the magnetization free
layer 210, for example, a Co-Fe-B alloy or an Fe-B alloy is used. For example, a Co40Fe40B20
alloy is used. When an alloy containing at least one element selected from the group consisting of
Fe, Co and Ni and boron (B) is used for the magnetization free layer 210, Ga, Al, Si, or W is added.
Also good. The addition of these elements promotes, for example, high magnetostriction. As the
magnetization free layer 210, for example, an Fe-Ga-B alloy, a Fe-Co-Ga-B alloy, or an Fe-Co-Si-B
alloy may be used. By using such a boron-containing magnetic material, the coercivity (Hc) of the
magnetization free layer 210 becomes low, and the change of the magnetization direction with
respect to strain becomes easy. This provides high sensitivity.
[0128]
The boron concentration (for example, the composition ratio of boron) in the magnetization free
layer 210 is 5 at. % (Atomic percent) or more is preferable. This makes it easy to obtain an
amorphous structure. The boron concentration in the magnetization free layer is 35 at. % Or less
is preferable. If the boron concentration is too high, for example, the magnetostriction constant
04-05-2019
33
decreases. The boron concentration in the magnetization free layer is, for example, 5 at. % Or
more 35 at. % Or less is preferable, and 10 at. % To 30 at. % Or less is more preferable.
[0129]
In a part of the magnetic layer of the magnetization free layer 210, Fe 1-y B y (0 <y ≦ 0.3), or
(Fez x 1-a) 1-y B y (X is Co or Ni, When 0.8 ≦ z <1, 0 <y ≦ 0.3, it is easy to simultaneously
achieve a large magnetostriction constant λ and a low coercivity. For this reason, it is
particularly preferable in view of obtaining a high gauge factor. For example, Fe 80 B 20 (4 nm)
is used as the magnetization free layer 210. As the magnetization free layer, Co40Fe40B20 (0.5
nm) / Fe80B20 (4 nm) is used.
[0130]
The magnetization free layer 210 may have a multilayer structure. When a tunnel insulating
layer of MgO is used as the intermediate layer 203, a layer of a Co-Fe-B alloy is preferably
provided in a portion of the magnetization free layer 210 in contact with the intermediate layer
203. Thereby, a high magnetoresistance effect can be obtained. In this case, a layer of a Co-Fe-B
alloy is provided on the intermediate layer 203, and another magnetic material having a large
magnetostriction constant is provided on the layer of the Co-Fe-B alloy. When the magnetization
free layer 210 has a multilayer structure, for example, Co-Fe-B (2 nm) / Fe-Co-Si-B (4 nm) or the
like is used for the magnetization free layer 210.
[0131]
The cap layer 211 protects a layer provided under the cap layer 211. For the cap layer 211, for
example, a plurality of metal layers are used. For the cap layer 211, for example, a two-layer
structure (Ta / Ru) of a Ta layer and a Ru layer is used. The thickness of this Ta layer is, for
example, 1 nm, and the thickness of this Ru layer is, for example, 5 nm. As the cap layer 211,
another metal layer may be provided instead of the Ta layer or the Ru layer. The configuration of
the cap layer 211 is arbitrary. For example, a nonmagnetic material is used as the cap layer 211.
Other materials may be used as the cap layer 211 as long as the layer provided below the cap
layer 211 can be protected.
04-05-2019
34
[0132]
When a magnetic material containing boron is used for the magnetization free layer 210, a
diffusion suppression layer (not shown) of an oxide material or a nitride material may be
provided between the magnetization free layer 210 and the cap layer 211. Thereby, for example,
the diffusion of boron is suppressed. By using a diffusion suppression layer including an oxide
layer or a nitride layer, diffusion of boron contained in the magnetization free layer 210 can be
suppressed, and the amorphous structure of the magnetization free layer 210 can be maintained.
As an oxide material or nitride material used for the diffusion suppression layer, for example, Mg,
Al, Si, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Zr, Nb, Mo, Ru, Rh An oxide material or nitride material
containing an element such as Pd, Ag, Hf, Ta, W, Sn, Cd or Ga is used. The diffusion suppression
layer is a layer that does not contribute to the magnetoresistance effect. The area resistance of
the diffusion suppression layer is preferably low. For example, the area resistance of the diffusion
suppression layer is preferably set lower than the area resistance of the intermediate layer
contributing to the magnetoresistance effect. From the viewpoint of reducing the area resistance
of the diffusion suppression layer, an oxide or a nitride of Mg, Ti, V, Zn, Sn, Cd, or Ga is
preferable for the diffusion suppression layer. The barrier height is low in these materials. As a
function to suppress the diffusion of boron, an oxide having a stronger chemical bond is
preferable. For example, a 1.5 nm MgO layer is used. The oxynitride is contained in either the
oxide or the nitride.
[0133]
When an oxide or a nitride is used for the diffusion suppression layer, the thickness of the
diffusion suppression layer is preferably, for example, 0.5 nm or more. Thus, the diffusion
suppressing function of boron is sufficiently exerted. The thickness of the diffusion suppression
layer is preferably 5 nm or less. Thereby, for example, low area resistance can be obtained. The
thickness of the diffusion suppression layer is preferably 0.5 nm or more and 5 nm or less, and
more preferably 1 nm or more and 3 nm or less.
[0134]
As the diffusion suppression layer, at least one selected from the group consisting of magnesium
(Mg), silicon (Si) and aluminum (Al) may be used. A material containing these light elements is
used as the diffusion suppression layer. These light elements combine with boron to form a
compound. For example, at least one of a Mg-B compound, an Al-B compound, and a Si-B
04-05-2019
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compound is formed in a portion including the interface between the diffusion suppression layer
and the magnetization free layer 210. These compounds suppress the diffusion of boron.
[0135]
Another metal layer or the like may be inserted between the diffusion suppression layer and the
magnetization free layer 210. If the distance between the diffusion suppression layer and the
magnetization free layer 210 is too large, boron diffuses between them and the boron
concentration in the magnetization free layer 210 decreases. Therefore, the distance between the
diffusion suppression layer and the magnetization free layer 210 is preferably 10 nm or less, and
more preferably 3 nm or less.
[0136]
FIG. 7 is a schematic perspective view illustrating a part of another pressure sensor according to
the embodiment. As shown in FIG. 7, the sensing element 50AA is the same as the sensing
element 50A except that the insulating layer 213 is provided. The insulating layer 213 is
provided between the lower electrode 204 and the upper electrode 212. The insulating layer 213
is aligned with the magnetization free layer 210 and the first magnetization fixed layer 209 in a
direction intersecting the direction connecting the lower electrode 204 and the upper electrode
212. The portions other than the insulating layer 213 are the same as those of the detection
element 50A, and thus the description thereof is omitted.
[0137]
For the insulating layer 213, for example, aluminum oxide (for example, Al 2 O 3), silicon oxide
(for example, SiO 2), or the like is used. The insulating layer 213 suppresses the leak current of
the sensing element 50AA. The insulating layer 213 may be provided in a detection element
described later.
[0138]
FIG. 8 is a schematic perspective view illustrating a portion of another pressure sensor according
04-05-2019
36
to the embodiment. As shown in FIG. 8, a hard bias layer 214 is further provided in the sensing
element 50AB. Except this, it is the same as that of sensing element 50A. The hard bias layer 214
is provided between the lower electrode 204 and the upper electrode 212. The magnetization
free layer 210 and the first magnetization fixed layer 209 are disposed between two portions of
the hard bias layer 214 in a direction intersecting the direction connecting the lower electrode
204 and the upper electrode 212. Except this, it is the same as that of sensing element 50AA.
[0139]
The hard bias layer 214 sets the magnetization direction of the magnetization free layer 210 by
the magnetization of the hard bias layer 214. With the hard bias layer 214, the magnetization
direction of the magnetization free layer 210 is set to a desired direction in a state where no
external pressure is applied to the film portion.
[0140]
For the hard bias layer 214, for example, Co-Pt, Fe-Pt, Co-Pd, or Fe-Pd is used. In these materials,
for example, magnetic anisotropy and coercivity are relatively high. These materials are, for
example, hard magnetic materials. For the hard bias layer 214, for example, an alloy in which an
additive element is further added to Co-Pt, Fe-Pt, Co-Pd, or Fe-Pd may be used. In the hard bias
layer 214, for example, CoPt (Co ratio is 50 at. % Or more and 85 at. % Or less), (CoxPt100-x)
100-yCry (x is 50 at. % Or more and 85 at. % Or less, y is 0 at. % Or more 40 at. % Or less) or
FePt (the ratio of Pt is 40 at. % Or more 60 at. %) Or the like may be used. When such a material
is used, the direction of magnetization of the hard bias layer 214 is set (fixed) in the direction in
which the external magnetic field is applied by applying an external magnetic field larger than
the coercivity of the hard bias layer 214. The thickness (for example, the length along the
direction from the lower electrode 204 toward the upper electrode) of the hard bias layer 214 is,
for example, 5 nm or more and 50 nm or less.
[0141]
When the insulating layer 213 is disposed between the lower electrode 204 and the upper
electrode 212, SiO x or AlO x is used as a material of the insulating layer 213. Further, an
underlayer (not shown) may be provided between the insulating layer 213 and the hard bias
layer 214. When a hard magnetic material such as Co-Pt, Fe-Pt, Co-Pd, or Fe-Pd is used for the
04-05-2019
37
hard bias layer 214, Cr or Fe-Co is used as a material of the underlayer for the hard bias layer
214. Etc. are used.
[0142]
The hard bias layer 214 may have a structure stacked on a hard bias layer pinning layer (not
shown). In this case, the magnetization direction of the hard bias layer 214 can be set (fixed) by
exchange coupling between the hard bias layer 214 and the pinning layer for hard bias layer. In
this case, the hard bias layer 214 is made of a ferromagnetic material of an alloy containing at
least one of Fe, Co and Ni, or at least one of them. In this case, for the hard bias layer 214, for
example, a Co x Fe 100-x alloy (x is 0 at. % To 100 at. % Or less), Ni x Fe 100-x alloy (x is 0 at. %
To 100 at. Or less, or materials obtained by adding a nonmagnetic element thereto. As the hard
bias layer 214, the same material as that of the first magnetization fixed layer 209 described
above is used. For the hard bias layer pinning layer, the same material as the pinning layer 206
in the above-mentioned sensing element 50A is used. In the case of providing a hard bias layer
pinning layer, an underlayer similar to the material used for the underlayer 205 may be provided
below the hard bias layer pinning layer. The hard bias layer pinning layer may be provided below
or above the hard bias layer. The magnetization direction of the hard bias layer 214 in this case,
like the pinning layer 206, is determined by heat treatment in a magnetic field.
[0143]
The hard bias layer 214 and the insulating layer 213 described above can be applied to any of
the sensing elements according to the embodiment. When the stacked structure of the hard bias
layer 214 and the hard bias layer pinning layer is used, the magnetization direction of the hard
bias layer 214 is easily maintained even when a large external magnetic field is applied to the
hard bias layer 214 in a short time. be able to.
[0144]
FIG. 9 is a schematic perspective view illustrating a portion of another pressure sensor according
to the embodiment. As shown in FIG. 9, in the sensing element 50B, the lower electrode 204, the
underlayer 205, the magnetization free layer 210, the intermediate layer 203, the first
magnetization fixed layer 209, the magnetic coupling layer 208, and the second magnetization.
The fixed layer 207, the pinning layer 206, the cap layer 211, and the upper electrode 212 are
04-05-2019
38
sequentially stacked. The first magnetization fixed layer 209 corresponds to, for example, one of
the first to fourth opposing magnetic layers 11 b to 14 b. The magnetization free layer 210
corresponds to, for example, any of the first to fourth magnetic layers 11a to 14a. The
intermediate layer 203 corresponds to any one of the first to fourth intermediate layers 11c to
14c. The sensing element 50B is, for example, a top spin valve type.
[0145]
As the base layer 205, for example, a laminated film (Ta / Cu) of tantalum and copper is used.
The thickness (length in the Z-axis direction) of this Ta layer is, for example, 3 nm. The thickness
of this Cu layer is, for example, 5 nm. For the magnetization free layer 210, for example, 4 nm
thick Co 40 Fe 40 B 20 is used. For the intermediate layer 203, for example, an MgO layer
having a thickness of 1.6 nm is used. For the first magnetization fixed layer 209, for example,
Co40Fe40B20 / Fe50Co50 is used. The thickness of this Co 40 Fe 40 B 20 layer is, for example,
2 nm. The thickness of this Fe 50 Co 50 layer is, for example, 1 nm. For the magnetic coupling
layer 208, for example, a Ru layer with a thickness of 0.9 nm is used. For the second
magnetization fixed layer 207, for example, a Co 75 Fe 25 layer with a thickness of 2.5 nm is
used. For the pinning layer 206, for example, an IrMn layer with a thickness of 7 nm is used. For
the cap layer 211, for example, Ta / Ru is used. The thickness of this Ta layer is, for example, 1
nm. The thickness of this Ru layer is, for example, 5 nm.
[0146]
The material of each layer included in the sensing element 50B can be used by inverting the
material of each layer included in the sensing element 50A up and down. The above-described
diffusion suppression layer may be provided between the underlayer 205 of the sensing element
50B and the magnetization free layer 210.
[0147]
FIG. 10 is a schematic perspective view illustrating a portion of another pressure sensor
according to the embodiment. As shown in FIG. 10, in the sensing element 50C, the lower
electrode 204, the underlayer 205, the pinning layer 206, the first magnetization fixed layer 209,
the intermediate layer 203, the magnetization free layer 210, and the cap layer 211. , Are
stacked in this order. The first magnetization fixed layer 209 corresponds to, for example, one of
04-05-2019
39
the first to fourth opposing magnetic layers 11 b to 14 b. The magnetization free layer 210
corresponds to, for example, any of the first to fourth magnetic layers 11a to 14a. The
intermediate layer 203 corresponds to any one of the first to fourth intermediate layers 11c to
14c. The sensing element 50C has, for example, a single pin structure using a single
magnetization fixed layer.
[0148]
For the base layer 205, for example, Ta / Ru is used. The thickness (length in the Z-axis direction)
of this Ta layer is, for example, 3 nm. The thickness of this Ru layer is, for example, 2 nm. For the
pinning layer 206, for example, an IrMn layer with a thickness of 7 nm is used. For the first
magnetization fixed layer 209, for example, a Co 40 Fe 40 B 20 layer with a thickness of 3 nm is
used. For the intermediate layer 203, for example, an MgO layer having a thickness of 1.6 nm is
used. For the magnetization free layer 210, for example, 4 nm thick Co 40 Fe 40 B 20 is used.
For the cap layer 211, for example, Ta / Ru is used. The thickness of this Ta layer is, for example,
1 nm. The thickness of this Ru layer is, for example, 5 nm.
[0149]
As the material of each layer of the sensing element 50C, for example, the same material as the
material of each layer of the sensing element 50A is used.
[0150]
FIG. 11 is a schematic perspective view illustrating a portion of another pressure sensor
according to the embodiment.
As shown in FIG. 11, in the sensing element 50D, the lower electrode 204, the underlayer 205,
the lower pinning layer 221, the lower second magnetization fixed layer 222, the lower magnetic
coupling layer 223, and the lower first magnetization fixed layer 224, lower intermediate layer
225, magnetization free layer 226, upper intermediate layer 227, upper first magnetization fixed
layer 228, upper magnetic coupling layer 229, upper second magnetization fixed layer 230,
upper pinning layer 231 And the cap layer 211 are sequentially stacked. The lower first
magnetization fixed layer 224 and the upper first magnetization fixed layer 228 correspond to,
for example, any of the first to fourth opposing magnetic layers 11 b to 14 b. The magnetization
free layer 226 corresponds to, for example, any of the first to fourth magnetic layers 11a to 14a.
04-05-2019
40
[0151]
For the base layer 205, for example, Ta / Ru is used. The thickness (length in the Z-axis direction)
of this Ta layer is, for example, 3 nanometers (nm). The thickness of this Ru layer is, for example,
2 nm. For the lower pinning layer 221, for example, an IrMn layer with a thickness of 7 nm is
used. For the lower second magnetization fixed layer 222, for example, a Co 75 Fe 25 layer with
a thickness of 2.5 nm is used. For the lower magnetic coupling layer 223, for example, a Ru layer
with a thickness of 0.9 nm is used. For the lower first magnetization fixed layer 224, for example,
a Co 40 Fe 40 B 20 layer with a thickness of 3 nm is used. For the lower intermediate layer 225,
for example, an MgO layer having a thickness of 1.6 nm is used. For the magnetization free layer
226, for example, 4 nm thick Co 40 Fe 40 B 20 is used. For the upper intermediate layer 227, for
example, an MgO layer having a thickness of 1.6 nm is used. For the upper first magnetization
fixed layer 228, for example, Co40Fe40B20 / Fe50Co50 is used. The thickness of this Co 40 Fe
40 B 20 layer is, for example, 2 nm. The thickness of this Fe 50 Co 50 layer is, for example, 1 nm.
For the upper magnetic coupling layer 229, for example, a Ru layer with a thickness of 0.9 nm is
used. For the upper second magnetization fixed layer 230, for example, a Co 75 Fe 25 layer with
a thickness of 2.5 nm is used. For the upper pinning layer 231, for example, an IrMn layer with a
thickness of 7 nm is used. For the cap layer 211, for example, Ta / Ru is used. The thickness of
this Ta layer is, for example, 1 nm. The thickness of this Ru layer is, for example, 5 nm.
[0152]
As a material of each layer of sensing element 50D, the thing similar to the material of each layer
of sensing element 50A is used, for example.
[0153]
FIG. 12 is a schematic perspective view illustrating a part of another pressure sensor according
to the embodiment.
As shown in FIG. 12, in the sensing element 50E, the lower electrode 204, the underlayer 205,
the first magnetization free layer 241, the intermediate layer 203, the second magnetization free
layer 242, the cap layer 211, and the upper electrode And 212 are stacked in this order. The first
magnetization free layer 241 corresponds to any one of the first to fourth magnetic layers 11a to
14a. The second magnetization free layer 242 corresponds to any one of the first to fourth
04-05-2019
41
opposing magnetic layers 11 b to 14 b. In this example, the magnetizations of the first to fourth
opposing magnetic layers 11b to 14b can be changed.
[0154]
For the base layer 205, for example, Ta / Cu is used. The thickness (length in the Z-axis direction)
of this Ta layer is, for example, 3 nm. The thickness of this Cu layer is, for example, 5 nm. For the
first magnetization free layer 241, for example, Co40Fe40B20 having a thickness of 4 nm is
used. For the intermediate layer 203, for example, Co40Fe40B20 with a thickness of 4 nm is
used in the second example. For example, Cu / Ta / Ru is used for the cap layer 211. The
thickness of this Cu layer is, for example, 5 nm. The thickness of this Ta layer is, for example, 1
nm. The thickness of this Ru layer is, for example, 5 nm.
[0155]
The material of each layer of the sensing element 50E is the same as the material of each layer of
the sensing element 50A. As a material of the first magnetization free layer 241 and the second
magnetization free layer 242, for example, the same material as the magnetization free layer 210
of the sensing element 50A may be used.
[0156]
Third Embodiment FIG. 13 is a schematic view illustrating a microphone according to a third
embodiment. As shown in FIG. 13, the microphone 610 according to the present embodiment
includes any pressure sensor according to the above-described embodiment, or a pressure sensor
according to a modification thereof. In this example, a pressure sensor 110 is used as a pressure
sensor.
[0157]
The microphone 610 is provided, for example, in the portable information terminal 710. The film
portion of the pressure sensor 110 is, for example, substantially parallel to the surface provided
with the display unit 620 of the portable information terminal 710. The arrangement of the
04-05-2019
42
membrane part is optional. According to the embodiment, a microphone that can improve the
stability of detection can be provided. The microphone 610 according to the embodiment may be
provided, for example, in an IC recorder or a pin microphone.
[0158]
FIG. 14 is a schematic cross-sectional view illustrating another microphone according to the third
embodiment. A microphone 320 (acoustic microphone) according to the present embodiment
includes a printed circuit board 321, a cover 323, and a pressure sensor. As a pressure sensor,
any of the pressure sensors according to the embodiments or their variants are used. In this
example, a pressure sensor 110 is used as a pressure sensor. The printed board 321 includes, for
example, a circuit such as an amplifier. The cover 323 is provided with an acoustic hole 325. The
sound 329 enters the inside of the cover 323 through the acoustic hole 325. The microphone
320 is sensitive to sound pressure. By using the highly sensitive pressure sensor 110, a highly
sensitive microphone 320 can be obtained. For example, the pressure sensor 110 is mounted on
the printed circuit board 321, and an electrical signal line is provided. A cover 323 is provided
on the printed circuit board 321 so as to cover the pressure sensor 110. A microphone can be
provided that can improve the stability of detection.
[0159]
Fourth Embodiment FIGS. 15A and 15B are schematic views illustrating a blood pressure sensor
according to a fourth embodiment. FIG. 15 (a) is a schematic plan view illustrating the skin on
human arterial blood vessels. FIG.15 (b) is H1-H2 line sectional drawing of FIG. 15 (a).
[0160]
The blood pressure sensor 330 according to this embodiment includes any pressure sensor
according to the embodiment or a variation thereof. In this example, a pressure sensor 110 is
used as a pressure sensor. Pressure sensor 110 is pressed against skin 333 above arterial blood
vessel 331. Thereby, the blood pressure sensor 330 can perform blood pressure measurement
continuously. According to this embodiment, it is possible to provide a blood pressure sensor
capable of improving the stability of detection. Blood pressure can be measured with high
sensitivity.
04-05-2019
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[0161]
Fifth Embodiment FIG. 16 is a schematic view illustrating a touch panel according to a fifth
embodiment. As the touch panel 340 according to the present embodiment, any pressure sensor
according to the embodiment or a modification thereof is used. In this example, a pressure sensor
110 is used as a pressure sensor. In the touch panel 340, the pressure sensor 110 is mounted on
at least one of the inside of the display and the outside of the display.
[0162]
For example, the touch panel 340 includes a plurality of first wires 346, a plurality of second
wires 347, a plurality of pressure sensors 110, and a control unit 341.
[0163]
In this example, the plurality of first wires 346 are arranged along the Y-axis direction.
Each of the plurality of first wires 346 extends along the X-axis direction. The plurality of second
wires 347 are arranged along the X-axis direction. Each of the plurality of second wires 347
extends along the Y-axis direction.
[0164]
Each of the plurality of pressure sensors 110 is provided at each intersection of the plurality of
first wires 346 and the plurality of second wires 347. One of the pressure sensors 110 is one of
the sensing elements 310 e for sensing. Here, the intersection includes a position where the first
wire 346 and the second wire 347 intersect and a region around the position.
[0165]
One end 310 a of each of the plurality of pressure sensors 110 is connected to each of the
plurality of first wires 346. The other end 310 b of each of the plurality of pressure sensors 110
04-05-2019
44
is connected to each of the plurality of second wires 347.
[0166]
The control unit 341 is connected to the plurality of first wires 346 and the plurality of second
wires 347. For example, the control unit 341 includes a first wiring circuit 346d connected to the
plurality of first wirings 346, a second wiring circuit 347d connected to the plurality of second
wirings 347, and a first wiring circuit 346d. And a control circuit 345 connected to the second
wiring circuit 347d. The pressure sensor 110 is capable of compact and highly sensitive pressure
sensing. Therefore, it is possible to realize a high definition touch panel.
[0167]
According to the embodiment, a touch panel capable of improving the stability of detection can
be provided. Enables highly sensitive touch input.
[0168]
The pressure sensor according to the embodiment may be applied to an air pressure sensor, a
tire air pressure sensor, or the like in addition to the application described above. The pressure
sensor according to the embodiment can be applied to various pressure detections.
[0169]
Embodiments include, for example, the following features. (Feature 1) A holding portion, a first
film portion, and a first extension portion extending in a first direction, and a portion extending
in a direction crossing the first direction are connected to one end of the first extension portion A
first edge portion including a first intersection portion held by the holding portion, and a first
end portion aligned with the first edge portion along a second direction intersecting the first
direction The first film portion, which is deformable, is fixed to the first film portion, and is
provided between the first magnetic layer, the first opposing magnetic layer, the first magnetic
layer, and the first opposing magnetic layer. And a first sensing element including the first
intermediate layer. (Feature 2) The first edge portion further includes a first other end crossing
04-05-2019
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portion extending in a direction crossing the first direction and connected to the other end of the
first extending portion, the first other end crossing portion The pressure sensor according to
Feature 1, wherein a direction of extension of the line intersects with the direction of extension of
the first intersection. (Feature 3) The pressure sensor according to feature 1 or 2, wherein the
length of the first end in the first direction is shorter than the length of the first extension in the
first direction. (Feature 4) The pressure sensor according to any one of Features 1 to 3, wherein
the first intersection portion includes a curved portion. (Feature 5) In any one of the features 1 to
4, the position of the first end in the direction intersecting the first direction and the second
direction changes according to the deformation of the first film portion. Pressure sensor
described. (Feature 6) Any one of Features 1 to 5 in which the position in the second direction of
at least a portion of the first sensing element overlaps the position in the second direction of at
least a portion of the first intersection. The pressure sensor described in. (Feature 7) The position
in the second direction of at least a part of the first detection element is the position in the
second direction of at least a part of the first intersection, and the second direction of the first
end. The pressure sensor according to any one of the features 1 to 5, located between (Feature 8)
The first sensing element has a center in the second direction, and a distance between the center
and the first extension along the second direction is the first end and A pressure sensor
according to any one of features 1 to 5, wherein the pressure sensor is 1/5 or less of the distance
along the second direction between the first extension and the first extension. (Feature 9) The
first sensing element has a center in the second direction, and a distance between the center and
the first end along the second direction is the first end and the first end. A pressure sensor
according to any one of features 1 to 5, wherein the distance between the first extension and the
second extension is 0.8 times or more and 0.9 times or less the distance along the second
direction.
(Feature 10) The holding includes a second extending portion extending along the first direction,
and a second crossing portion extending across the first direction and connected to one end of
the second extending portion. Fixed to the second membrane portion including the second edge
portion held by the second portion and the second end portion aligned with the second edge
portion along the second direction, and the second membrane portion A second sensing element
including a second magnetic layer, a second opposing magnetic layer, and a second intermediate
layer provided between the second magnetic layer and the second opposing magnetic layer; The
position of the first end in the second direction is between the position of the first edge in the
second direction and the position of the second edge in the second direction, the second The
position of the end in the second direction is the position of the first end in the second direction,
and the position of the second edge in the second direction. Located between the second end, the
pressure sensor according to according to said first end portion and apart, one of the features 14. (Feature 11) The second edge portion further includes a second other end crossing portion
extending in a direction crossing the first direction and connected to the other end of the second
extending portion, wherein the second other end crossing portion The pressure sensor according
04-05-2019
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to Feature 10, wherein an extension direction of the first axis intersects with an extension
direction of the second intersection. (Feature 12) The feature 10 or 11, wherein the second
extension portion is located between a portion of the second intersection portion and a portion of
the second other end intersection portion in the first direction. The pressure sensor described in.
(Feature 13) The length of the second end in the first direction is shorter than the length of the
second extension in the first direction. Pressure sensor described. (Feature 14) The pressure
sensor according to any one of Features 10 to 13, wherein the second intersection includes a
curved portion. (Feature 15) A third extending portion extending along a third direction
intersecting the first direction, and a third crossing portion extending across the third direction
and connected to one end of the third extending portion And a third end portion held by the
holding portion and a third end portion aligned with the third edge portion along a fourth
direction intersecting the third direction. A film portion, a third magnetic layer fixed to the third
film portion, a third opposing magnetic layer, and a third intermediate layer provided between
the third magnetic layer and the third opposing magnetic layer And the second intersection
portion is aligned with the first intersection portion in the second direction, and the position of
the third extension portion in the second direction is the first detection element. Between the
position in the second direction of at least part of the intersection and the position in the second
direction of at least part of the second intersection, The position of the third intersection in the
second direction is the position of the third extension in the second direction, and the position of
the at least part of the first intersection in the second direction; The pressure sensor according to
any one of the features 10 to 14, wherein the third end is between the first end and the second
end, and between the first end and the second end.
(Feature 16) The third edge portion further includes a third other end crossing portion extending
in a direction crossing the third direction and connected to the other end of the third extending
portion, and the third other end crossing portion The pressure sensor according to Feature 15,
wherein the extending direction of the crosses the extending direction of the third intersection.
(Feature 17) The pressure sensor according to feature 15 or 16, wherein the third direction is
along the second direction. (Feature 18) The holding includes the fourth extending portion
extending along the third direction, and the fourth crossing portion extending across the third
direction and connected to one end of the fourth extending portion. Fixed to the fourth film
portion that includes a fourth edge held by the fourth portion and a fourth end portion that is
aligned with the fourth edge along the fourth direction; A fourth sensing element including a
fourth magnetic layer, a fourth opposing magnetic layer, and a fourth intermediate layer
provided between the fourth magnetic layer and the fourth opposing magnetic layer; The
position of the third end in the fourth direction is between the position of the third edge in the
fourth direction and the position of the fourth edge in the fourth direction, the fourth The
position of the end in the fourth direction is the position of the third end in the fourth direction
and the position of the fourth edge in the fourth direction. Located between said fourth end
portion, the pressure sensor according to any one of the third and away from the end portion,
04-05-2019
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wherein 15 to 17. (Feature 19) The fourth edge portion further includes a fourth other end
crossing portion extending in a direction crossing the third direction and connected to the other
end of the fourth extending portion, the fourth other end crossing portion A pressure sensor
according to feature 18, wherein the extending direction of the crosses the extending direction of
the fourth intersection. (Feature 20) The angle between the magnetization of the first magnetic
layer and the magnetization of the first opposing magnetic layer changes in accordance with the
deformation of the first film portion. Pressure sensor as described in (Feature 21) The pressure
sensor according to any one of features 1 to 20, wherein the resistance between the first
magnetic layer and the first opposing magnetic layer changes in accordance with the
deformation of the first film portion. . (Feature 22) A microphone provided with the pressure
sensor according to any one of features 1 to 21. (Feature 23) A blood pressure sensor provided
with the pressure sensor according to any one of features 1 to 21. (Feature 24) A touch panel
provided with the pressure sensor according to any one of features 1 to 21.
[0170]
According to the embodiment, it is possible to provide a pressure sensor, a microphone, a blood
pressure sensor and a touch panel which can improve the stability of detection.
[0171]
In the present specification, "vertical" and "parallel" include not only strictly vertical and strictly
parallel but also include, for example, variations in manufacturing processes, etc., and they may
be substantially vertical and substantially parallel. Just do it.
[0172]
The embodiments of the present invention have been described above with reference to specific
examples.
However, the present invention is not limited to these specific examples.
For example, as to the specific configuration of each element such as the film part, the sensing
element, the magnetic layer, the intermediate layer, and the electrode included in the pressure
sensor, the present invention can be similarly selected by appropriately selecting from known
ranges by those skilled in the art. As long as the same effect can be obtained, it is included in the
scope of the present invention.
04-05-2019
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[0173]
Moreover, what combined any two or more elements of each specific example in the technically
possible range is also included in the scope of the present invention as long as the gist of the
present invention is included.
[0174]
In addition, all pressure sensors, microphones, blood pressure sensors and touch panels that can
be appropriately designed and implemented based on the pressure sensors, microphones, blood
pressure sensors and touch panels described above as the embodiments of the present invention
As long as the scope of the invention is included, it belongs to the scope of the present invention.
[0175]
Besides, within the scope of the concept of the present invention, those skilled in the art can
conceive of various changes and modifications, and it is understood that the changes and
modifications are also within the scope of the present invention. .
[0176]
While certain embodiments of the present invention have been described, these embodiments
have been presented by way of example only, and are not intended to limit the scope of the
invention.
These novel embodiments can be implemented in various other forms, and various omissions,
substitutions, and modifications can be made without departing from the scope of the invention.
These embodiments and modifications thereof are included in the scope and the gist of the
invention, and are included in the invention described in the claims and the equivalent scope
thereof.
[0177]
11a to 14a: first to fourth magnetic layers 11b to 14b first to fourth counter magnetic layers 11c
to 14c first to fourth intermediate layers 50, 50A, 50AA, 50AB, 50AC, 50B, 50C , 50D, 50E:
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detection elements, 51 to 54: first to fourth detection elements, 51c: center, 58a, 58b: first and
second electrodes, 70h: cavity, 70s: holding portion, 71 to 74: first -4th film part, 71a-74a ... 1st4th crossing part, 71b-71b ... 1st-4th other end crossing part, 71e-74e ... 1st-4th end, 71r-74r ...
1st ~ 4th edge, 71s ~ 74s ... 1st ~ 4th extension, 71se ~ 74se ... one end, 71sf ~ 74sf ... other end,
79 ... membrane part, 79r ... edge, σ ... membrane stress, 110, 110a , 111 to 113, 120 ...
pressure sensor, 203 ... middle Layers 204 Lower electrode 205 Underlayer 206 Pinning layer
207 Second magnetization fixed layer 208 Magnetic coupling layer 209 First magnetization fixed
layer 210 Magnetization free layer 211 Cap layer 212: upper electrode, 213: insulating layer,
214: hard bias layer, 221: lower pinning layer, 222: lower second magnetization fixed layer, 223:
lower magnetic coupling layer, 224: lower first magnetization fixed layer, 225: lower portion
Middle layer, 226: magnetization free layer, 227, upper intermediate layer, 228, upper first
magnetization fixed layer, 229, upper magnetic coupling layer, 230, upper second magnetization
fixed layer, 231, upper pinning layer, 241, first Magnetization free layer 242 second magnetic
free layer 310 a one end 310 b other end 310 e sensing element 320 microphone 321 printed
circuit board 323 Cover, 325: Acoustic hole, 329: Sound, 330: Blood pressure sensor, 331:
Arterial blood vessel, 333: Skin, 340: Touch panel, 341: Control part, 345: Control circuit, 346:
First wiring, 346 d: First wiring Circuit 347: second wiring 347 d: second wiring circuit 610:
microphone 620: display unit 710: portable information terminal AR: arrow Py: position S1:
distortion anisotropy slope d51 d71 ... distance, g1 ... interval
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