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JP2017535981

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This translation is machine-generated. It cannot be guaranteed that it is intelligible, accurate,
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DESCRIPTION JP2017535981
Abstract Embodiments of the present disclosure describe dies with integrated microphone
devices using through silicon vias (TSVs), as well as related techniques and configurations. In one
embodiment, a device includes a semiconductor substrate having a first side and a second side
disposed opposite the first side, and an interconnect layer formed on the first side of the
semiconductor substrate. And through silicon vias (TSVs) formed through the semiconductor
substrate and configured to route a plurality of electrical signals between the first side of the
semiconductor substrate and the second side of the semiconductor substrate through a specified
path. And a microphone device formed on the second side of the semiconductor substrate and
electrically coupled to the TSV. Other embodiments are described and / or claimed.
Die with integrated microphone device using through silicon via (TSV)
[0001]
Embodiments of the present disclosure generally relate to the field of integrated circuits, and
more particularly, to dies in which microphone devices using through silicon vias (TSVs) are
integrated, as well as related techniques and configurations.
[0002]
Microphone devices are widely used in a variety of devices including, for example,
communication devices, hearing aids, acoustic discrimination in water, and noise control.
03-05-2019
1
As the industry trend towards miniaturization of electronic devices, integration of micro-electromechanical system (MEMS) based microphone devices in semiconductor chips is currently being
promoted. However, such integration may be difficult due to the limited space on the
semiconductor chip and the fragility of active circuits on the semiconductor chip. Integration of
the MEMS based microphone with the active circuit may provide an opportunity to connect to
the surrounding environment, which may facilitate the introduction of corrosive or harmful
substances into the active circuit. Integration of the microphone device on the working side of
the semiconductor chip may require a larger and more expensive chip.
[0003]
Embodiments will be readily understood by the following detailed description in conjunction with
the accompanying drawings. Like reference numerals indicate like structural elements to
facilitate this description. Embodiments are shown by way of example and not limitation in the
figures of the accompanying drawings.
[0004]
FIG. 1 is a schematic top view of an example of a die in wafer form and singulated form,
according to some embodiments.
[0005]
FIG. 1 is a schematic longitudinal side view of an integrated circuit (IC) assembly according to
some embodiments.
[0006]
FIG. 1 is a schematic longitudinal side view of a capacitive transducer assembly according to
some embodiments.
[0007]
FIG. 1 is a schematic longitudinal side view of a microphone assembly according to some
embodiments.
[0008]
FIG. 7 is a schematic longitudinal side view of another microphone assembly according to some
03-05-2019
2
embodiments.
[0009]
FIG. 1 is a schematic perspective view of a microphone assembly according to a first
configuration, according to some embodiments.
[0010]
FIG. 7 is a schematic perspective view of a microphone assembly according to a second
configuration, according to some embodiments.
[0011]
FIG. 10 is a schematic perspective view of a microphone assembly according to a third
configuration, according to some embodiments.
[0012]
FIG. 5 schematically illustrates an example of a receiver circuit of a microphone device according
to some embodiments.
[0013]
FIG. 6 schematically illustrates an example of phased array analog processing of output data,
including sums of delayed signals, according to some embodiments.
[0014]
FIG. 2 schematically illustrates an example of a lateral configuration of a phased array
microphone, according to some embodiments.
[0015]
FIG. 7 schematically illustrates an example of a deflected beam using a phased array microphone,
according to some embodiments.
[0016]
FIG. 6 is a schematic perspective view of an example of a microphone backplate and membrane
membrane layout, according to some embodiments.
03-05-2019
3
[0017]
FIG. 10 is a schematic longitudinal side view of a microphone assembly during various stages of
fabrication, according to some embodiments.
FIG. 10 is a schematic longitudinal side view of a microphone assembly during various stages of
fabrication, according to some embodiments.
FIG. 10 is a schematic longitudinal side view of a microphone assembly during various stages of
fabrication, according to some embodiments.
FIG. 10 is a schematic longitudinal side view of a microphone assembly during various stages of
fabrication, according to some embodiments.
FIG. 10 is a schematic longitudinal side view of a microphone assembly during various stages of
fabrication, according to some embodiments.
FIG. 10 is a schematic longitudinal side view of a microphone assembly during various stages of
fabrication, according to some embodiments.
FIG. 10 is a schematic longitudinal side view of a microphone assembly during various stages of
fabrication, according to some embodiments.
FIG. 10 is a schematic longitudinal side view of a microphone assembly during various stages of
fabrication, according to some embodiments.
FIG. 10 is a schematic longitudinal side view of a microphone assembly during various stages of
fabrication, according to some embodiments.
03-05-2019
4
FIG. 10 is a schematic longitudinal side view of a microphone assembly during various stages of
fabrication, according to some embodiments.
FIG. 10 is a schematic longitudinal side view of a microphone assembly during various stages of
fabrication, according to some embodiments.
FIG. 10 is a schematic longitudinal side view of a microphone assembly during various stages of
fabrication, according to some embodiments.
FIG. 10 is a schematic longitudinal side view of a microphone assembly during various stages of
fabrication, according to some embodiments.
FIG. 10 is a schematic longitudinal side view of a microphone assembly during various stages of
fabrication, according to some embodiments. FIG. 10 is a schematic longitudinal side view of a
microphone assembly during various stages of fabrication, according to some embodiments.
[0018]
FIG. 5 is a schematic flow diagram for a method of fabricating a microphone assembly, according
to some embodiments.
[0019]
FIG. 10 schematically illustrates an example of a system that can include a microphone assembly
as described herein, according to some embodiments.
[0020]
Embodiments of the present disclosure describe dies with integrated microphone devices using
through silicon vias (TSVs), as well as associated techniques and configurations.
In the following detailed description, reference is made to the accompanying drawings that form
a part of the present specification.
03-05-2019
5
In the drawings, like numerals indicate like parts throughout, and embodiments by way of which
the subject matter of the present disclosure may be practiced are illustrated. It is to be
understood that other embodiments are available and structural or logical changes can be made
without departing from the scope of the present disclosure. The following detailed description is,
therefore, not to be taken in a limiting sense, and the scope of the embodiments is defined by the
appended claims and their equivalents.
[0021]
For the purposes of the present disclosure, the term "A and / or B" means (A), (B), or (A and B).
For the purposes of the present disclosure, the terms "A, B and / or C" refer to (A), (B), (C), (A and
B), (A and C), (B and C), Or, it means (A, B and C).
[0022]
In the specification, descriptions of viewpoint criteria such as top / bottom, sides, and top /
bottom etc may be used. Such descriptions are merely used to facilitate discussion and are not
intended to limit the application of the embodiments described herein to any particular
orientation.
[0023]
In the specification, the words "in an embodiment" or "in an embodiment" may be used. The
terms may each refer to one or more of the same or different embodiments. Furthermore, terms
such as "comprising," "including," and "having," as used with respect to the embodiments of the
present disclosure, are synonymous.
[0024]
Their derivatives may be used herein along with the term "combined with". "Coupled" may mean
one or more of the following. "Coupled" may mean that two or more elements are in direct
physical or electrical contact. However, “coupled” may also mean that two or more elements
03-05-2019
6
are not in direct contact with one another, but still cooperate or interact with one another, and
one or more other elements may May be meant to be coupled or connected between elements
which are considered to be coupled to one another. The term "directly coupled" may mean that
two or more elements are in direct contact.
[0025]
In various embodiments, the phrase "a first feature is formed, deposited or disposed on a second
feature" means that the first feature is formed on a second feature , Which may be meant to be
deposited or disposed, wherein at least a portion of the first mechanism is in direct contact with
at least a portion of the second mechanism (eg And / or in direct electrical contact) or not in
direct contact (eg, having one or more other features between the first feature and the second
feature).
[0026]
As used herein, the term "module" refers to an application specific integrated circuit (ASIC),
electronic circuit, processor (shared, dedicated, or group) and one or more software or firmware
programs executing Mentioning, being part of, or including memory (shared, dedicated, or
group), combinatorial logic, and / or other suitable components that provide the described
functionality it can.
[0027]
FIG. 1 shows a schematic top view of an example of a die 102 in wafer form 10 and singulated
form 100 according to some embodiments.
In some embodiments, the die 102 is one of a plurality of dies (e.g., dies 102, 103a, 103b) of the
wafer 11 comprised of a semiconductor material such as, for example, silicon or other suitable
material. May be there.
A plurality of dies can be formed on the surface of the wafer 11. Each of the dies may be a repeat
unit of a semiconductor product, including one or more microphone devices 104, as described
herein. The die 102 has a transistor structure, such as, for example, one or more transistor
devices or one or more channel bodies (eg, fin structures, nanowires, planar objects, etc.) that
provide channel paths to mobile charge carriers in the source / drain region. A circuit can be
included. In some embodiments, the circuitry can include receiver circuitry, sensor circuitry, or
03-05-2019
7
other circuitry of the microphone device. For example, interconnect structures such as contacts,
vias, and / or trenches are formed on and coupled to one or more transistor structures to deliver
electrical energy to the transistor structures through specific paths Can. For example, the
interconnect structure is electrically coupled to the channel body to provide the gate electrode
with delivery of threshold voltage and / or source / drain current to provide mobile charge
carriers for operation of the transistor device. Can. While one or more microphone devices 104
are illustrated in a particular configuration in FIG. 1 for simplicity, the one or more microphone
devices 104 may, in other embodiments, be configured on die 102 in a wide variety of other
ways. It should be understood that it can be configured in any suitable arrangement and have
smaller or larger dimensions than shown.
[0028]
After completion of the semiconductor product fabrication process embodied in the dies, the
wafer 11 is subjected to a singulation process in which each of the dies (e.g., dies 102) are
separated from one another to yield discrete "chips" of the semiconductor product. You may be
The wafer 11 may be of any of various sizes. In some embodiments, the wafer 11 has a diameter
of about 25.4 mm to about 450 mm. The wafer 11 may include other sizes and / or other shapes
in other embodiments. In some embodiments, wafer 11 may be a thin wafer. In various
embodiments, the microphone device 104 may be disposed on a semiconductor substrate in
wafer form 10 or singulated form 100. The microphone device 104 described herein may be
incorporated into the die 102 in logic circuitry or memory, or a combination thereof. In some
embodiments, microphone device 104 may be part of a system on chip (SoC) assembly.
[0029]
FIG. 2 shows a schematic longitudinal side view of an integrated circuit (IC) assembly 200
according to some embodiments. In some embodiments, the IC assembly 200 can include one or
more dies (hereinafter “dies 102”) that are electrically and / or physically coupled to the
package substrate 121. In some embodiments, package substrate 121 may be electrically
coupled to circuit substrate 122, as seen. In some embodiments, the integrated circuit (IC)
assembly 200 can include the die 102 and one or more of the package substrate 121 and / or
the circuit substrate 122, according to various embodiments.
[0030]
03-05-2019
8
The die 102 is representative of discrete products made of semiconductor material (eg, silicon)
using semiconductor fabrication techniques such as thin film deposition, lithography, and etching
used in conjunction with forming CMOS devices. Can. In some embodiments, one or more
microphone devices (eg, one or more microphone devices 104 of FIG. 1) may be formed on the
die 102. In some embodiments, the die 102 may include or be part of a processor, memory, SoC,
or ASIC. In some embodiments, an electrically insulating material, such as, for example, a molding
compound or underfill material (not shown) can encapsulate at least a portion of the die 102 and
/ or die level interconnect structure 106.
[0031]
The die 102 can be attached to the package substrate 121 by a wide variety of suitable
configurations including, for example, direct coupling with the package substrate 121 in a flip
chip configuration, as shown. In a flip chip configuration, the first side (sometimes referred to as
the "working side") S1 of the die 102 that contains the circuit may be a bump, pillar, or even that
may electrically couple the die 102 with the package substrate 121. Attached to the surface of
the package substrate 121 using die level interconnect structures 106, such as other suitable
structures. The first side S1 of the die 102 can include an active device, such as, for example, a
transistor device. The second side (sometimes referred to as the "non-working side") S2 can be
arranged relative to the first side S1 as can be seen.
[0032]
The die 102 can generally include a semiconductor substrate 102a, one or more device layers
(hereinafter "device layers 102b"), and one or more interconnect layers (hereinafter
"interconnection layers 102c"). The semiconductor substrate 102a may, in some embodiments,
be substantially comprised of a bulk semiconductor material such as, for example, silicon. The
device layer 102b can represent an area where active devices such as transistor devices are
formed on a semiconductor substrate. The device layer 102b can include, for example, transistor
structures such as channel bodies and / or source / drain regions of transistor devices. The
interconnect layer 102c can include an interconnect structure configured to send a plurality of
electrical signals from or to an active device in the device layer 102b through a specific path. For
example, interconnect layer 102c can include horizontal lines (eg, trenches) and / or vertical
plugs (eg, vias) or other suitable features to provide electrical routing and / or contacts. In some
embodiments, a plurality of through silicon vias (TSVs) may be used as a semiconductor
substrate to electrically couple the circuitry of device layer 102b or interconnect layer 102c to
03-05-2019
9
the second side S2. It can be formed through 102a. Although "TSV" or "multiple TSVs" may be
used throughout the specification, it should be understood that these terms do not necessarily
limit the described structure to only silicon based substrates. That is, "TSV" or "multiple TSVs"
may generally refer to through-substrate vias formed through other suitable substrate materials.
Device layer 102b and interconnect layer 102c can each be representative of multiple layers in
some embodiments.
[0033]
In some embodiments, the die level interconnect structure 106 can be electrically coupled to the
interconnect layer 102c, and specific paths for multiple electrical signals between the die 102
and other electrical devices. Can be configured to send through. Electrical signals may include,
for example, input / output (I / O) signals and / or power / ground signals used in connection
with the operation of the die 102.
[0034]
In some embodiments, package substrate 121 is an epoxy-based laminated substrate having a
core layer and / or a buildup layer, such as, for example, an Ajinomoto Build-up Film (ABF)
substrate. Package substrate 121 may include, in other embodiments, other suitable types of
substrates, including, for example, substrates made of glass, ceramic, or semiconductor materials.
[0035]
The package substrate 121 can include an electrical routing mechanism configured to send a
plurality of electrical signals to the die 102 through a specific path. An electrical routing
mechanism may be disposed on one or more surfaces of the package substrate 121, for example
to route multiple electrical signals through specific paths through the pads or traces (not shown)
and / or the package substrate 121. For example, internal routing features (not shown) such as
trenches, vias, or other interconnect structures. For example, in some embodiments, the package
substrate 121 may include an electrical routing mechanism, such as a pad (not shown)
configured to receive the interconnect structure 106 of each die level of the die 102.
03-05-2019
10
[0036]
Circuit board 122 may be a printed circuit board (PCB) comprised of an electrically insulating
material, such as an epoxy laminate. For example, the circuit board 122 may be, for example, a
material such as polytetrafluoroethylene, a flame retardant 4 (FR-4), a phenolic cotton paper
material such as FR-1, a cotton paper such as CEM-1 or CEM-3, and an epoxy material
Alternatively, it may include an electrically insulating layer composed of a woven glass material
laminated together using an epoxy resin prepreg material. Interconnect structures (not shown),
such as traces, trenches or vias, can be formed through the electrically insulating layer to route
electrical signals of the die 102 through the circuit board 122 through specific paths. Circuit
board 122 may be comprised of other suitable materials in other embodiments. In some
embodiments, circuit board 122 is a motherboard (eg, motherboard 1602 of FIG. 16).
[0037]
Package level interconnections, such as, for example, solder balls 112, may be packaged to form
corresponding solder joints that are configured to send multiple electrical signals between
package substrate 121 and circuit substrate 122 through a more specific path. It may be coupled
to one or more pads (hereinafter "pads 110") on the substrate 121 and / or the circuit board
122. The pad 110 can be composed of any suitable conductive material such as, for example,
metals including nickel (Ni), palladium (Pd), gold (Au), silver (Ag), copper (Cu), and combinations
thereof It is. Other suitable techniques for physically and / or electrically coupling package
substrate 121 to circuit substrate 122 may be used in other embodiments.
[0038]
The IC assembly 200 is suitable in other embodiments, for example, flip chip and / or wire
bonding configurations, interposers, multi-chip package configurations including system in
package (SiP), and / or package on package (PoP) configurations. A wide variety of other suitable
configurations can be included, including combinations. Other suitable techniques for routing
multiple electrical signals between the die 102 and other components of the IC assembly 200
through particular paths can be used in some embodiments.
[0039]
03-05-2019
11
FIG. 3 shows a schematic longitudinal side view of a capacitive transducer assembly 300
according to some embodiments. According to various embodiments, the capacitive transducer
assembly 300 is, as can be seen, a semiconductor substrate 102a (eg, of the die 102 or wafer 11
of FIG. 1) on the first side S1 of the semiconductor substrate 102a. A semiconductor substrate
102a on which a circuit (for example, circuit 314) is formed, a back plate 316 formed on the
second side S2 of the semiconductor substrate, and through silicon vias (TSVs) 322a and 322b
formed through the semiconductor substrate 102a , 322c.
[0040]
In some embodiments, circuit 314 can include active circuitry, such as, for example, receiver
circuitry or sensor circuitry of a microphone device. In some embodiments, the circuit 314 can
include the device layer 102b of FIG. Circuitry 314 may further include interconnect structures
(eg, trenches or vias) of one or more interconnect layers. In some embodiments, circuit 314 may
include interconnect layer 102c of FIG. Circuitry 314 can be disposed in dielectric material 318
and back plate 316 can be disposed in dielectric material 320. The dielectric materials 318, 320
can comprise any suitable material, such as, for example, silicon oxide (SiO2).
[0041]
In some embodiments, the backplate 316 may be formed by patterning a redistribution layer
(RDL) on the second side S2 of the semiconductor substrate 102a. In some embodiments, the
backplate 316 can include one or more openings 316 a formed through the backplate 316.
[0042]
Through silicon vias (TSVs) 322a, 322b, 322c can be formed through the semiconductor
substrate 102a, as can be seen. In some embodiments, one or more of the TSVs specify a
plurality of electrical signals between circuitry 314 on the first side S1 and components of the
microphone device on the second side S2, such as the backplate 316. It may be a signal TSV
322a configured to send through the path. In some embodiments, in operation, the backplate
316 can be configured to act as an electrically active sensing electrode, and the signal TSV 322a
provides an electrical connection to the circuit 314 (eg, sensor circuit). It is configurable to bring
about.
03-05-2019
12
[0043]
One or more of the TSVs is a ground TSV 322b configured to route multiple ground signals
through a specific path between features on the first side S1 and features on the second side S2
of the semiconductor substrate 102a Good. In some embodiments, the ground TSV 322b is
configured to electrically couple with another electrical device (eg, another die, a package
substrate, an interposer, or a circuit board) external to the capacitive transducer assembly 300. It
can be coupled to an interconnect structure 324 (eg, a pad or contact) on the first side S1.
[0044]
One or more of the TSVs may be a support TSV 322 c configured to structurally support
components of the microphone device, such as backplate 316. For example, the support TSV
322c may be a dummy TSV that functions as a support pillar. The support TSV 322 c may not be
configured to send multiple electrical signals between the circuit 314 and the back plate 316
through a specific path. In one embodiment, the support TSV 322c may include at least a portion
filled with an electrically insulating material.
[0045]
According to various embodiments, the semiconductor substrate 102a can represent a portion of
the wafer form 10 or the die 102 of the singulated form 100, as described in connection with
FIG. The capacitive transducer assembly 300 may be used as part of a single microphone or as
part of a microphone array in some embodiments.
[0046]
FIG. 4 shows a schematic longitudinal side view of a microphone assembly 400 according to
some embodiments. In some embodiments, the microphone assembly 400 can include the
capacitive transducer assembly 300 of FIG. For example, according to various embodiments, the
microphone assembly 400 is a semiconductor substrate 102a (eg, of the die 102 or wafer 11 of
FIG. 1), as seen, on a first side S1 of the semiconductor substrate 102a. A semiconductor
03-05-2019
13
substrate 102a on which a circuit (for example, circuit 314) is formed, a back plate 316 formed
on the second side S2 of the semiconductor substrate, and through silicon vias (TSVs) 322a and
322b formed through the semiconductor substrate 102a , 322c. The microphone assembly 400
is formed on the semiconductor substrate 102a adjacent (eg, under) the membrane membrane
326 and the membrane membrane 326, as seen, being coupled to the backplate 316 to form a
capacitor. And the chamber 303 can be further included.
[0047]
One or more openings 316 a may be formed through the backplate 316 and / or the dielectric
material 320, and one or more openings 326 a may be formed through the membrane 326. The
sacrificial material 325 can be disposed between the membrane 326 and the back plate 316. The
sacrificial material 325 can be removed during fabrication of the microphone assembly 400 to
provide an air gap in the area occupied by the sacrificial material 325. Regions of chamber 303,
openings 316a, 326a, and sacrificial material 325 may, in various embodiments, be filled with
any suitable gas, for example to form and include air. The openings 316a, 326a can provide
vents. In some embodiments, the microphone device of microphone assembly 400 (eg,
microphone device 104 of FIG. 1) includes back plate 316, membrane membrane 326, chamber
303, TSVs 322a, 322b, 322c, openings 316a, 326a, sacrificial material Air gaps in the area
occupied by 325 and / or one or more of the circuits 314 may be included. Forming the
components of the microphone device on the back side (e.g., the second side S2) opposite the
circuit 314 can provide space to allow for a phased array of microphone devices on the back
side. Such a configuration allows, for example, modification of the microphone acoustic response
by means of digital delay-sum beams that form (directionally) according to a desired acoustic
polarity pattern such as omnidirectional or (hyper) cardioid, and to improve the sensitivity. Can.
[0048]
In some embodiments, components of the semiconductor substrate 102 a and the microphone
device may be mounted on a package substrate 332. For example, in the illustrated embodiment,
the first side S 1 is coupled to the package substrate 332 using solder bumps 330. An underfill
material 328, such as an epoxy based underfill, or other suitable electrically insulating material
may be disposed between the semiconductor substrate 102a and the package substrate 332, as
will be seen. Solder bumps 330 may be used to couple multiple electrical signals between
package substrate 332 and circuitry 314 or other components of the microphone device,
including, for example, power / ground signals and / or input / output (I / O) signals. It can be
configured to send through a specific path. The semiconductor substrate 102a may be coupled to
03-05-2019
14
the package substrate 332 in other embodiments using other suitable techniques and
configurations.
[0049]
In some embodiments, the microphone assembly 400 can include a lid 334 configured to cover
components of the microphone device. The lid 334 may be made of, for example, metal, and may
be coupled to the package substrate 332 on which the semiconductor substrate 102 a is
mounted. The lid 334 is coupled to the package substrate 332 (eg, flip chip substrate) to form a
cavity that encapsulates the die (eg, the semiconductor substrate 102a and features formed on
the first side S1 and the second side S2) It is possible.
[0050]
In some embodiments, the lid 334 includes one or more openings 334 a for providing a
mouthpiece of the microphone assembly 400 so that sound can enter the cavity to operate the
microphone device. Can. In some embodiments, the top opening (eg, one or more openings 334a)
may be suitable for a tablet device. The lid 334 can provide an electromagnetic interface (EMI)
shield for the components of the microphone assembly 400 covered by the lid 334. According to
various embodiments, the lid 334 can be configured to protect membrane fabrication during
device fabrication, wafer dicing (eg, singulation), and / or packaging. The lid 334 may have other
configurations and / or be constructed of other suitable materials in other embodiments.
[0051]
FIG. 5 shows a schematic longitudinal side view of another microphone assembly 500 according
to some embodiments. The microphone assembly 500 is compatible with the embodiment
described in relation to the microphone assembly 400, except that the microphone assembly 500
in FIG. 5 does not include one or more openings 334a for providing a sound port. As can be and
more accurately stated, the package substrate 332 includes one or more openings 434 a formed
through the package substrate 332 to provide a mouth of the microphone assembly 500. In
some embodiments, the package substrate 332 is a flip chip substrate and the semiconductor
substrate 102a is part of a die that is coupled with the flip chip substrate in a flip chip
configuration. One or more openings 434a may provide a passageway for ambient gas (eg, air) to
enter the area enclosed by the lid 334, as can be seen. In some embodiments, one or more
03-05-2019
15
openings 434a may be ducts for ultrasound ventilation. In some embodiments, the bottom
opening (eg, one or more openings 434a) may be suitable for a mobile telephone device.
[0052]
FIG. 6 shows a schematic perspective view of a microphone assembly 600 according to a first
configuration, according to some embodiments. In a first configuration, for example, an amplifier,
a bias circuit, a phase adjuster, a delay sum beam forming circuit, a sigma delta modulator, a
phase shift delay (Td), and / or a power generation and adjustment element or receiver circuit An
active circuit 614, such as another component, is disposed on the device layer 102b at the first
side S1 of the die and, for example, a microphone configuration, such as a membrane membrane
and / or a backplate of one or more MEMS microphone transducers. An embodiment of a single
die is illustrated where elements 636 are disposed on the second side S2 of the die. For example,
the microphone assembly may be a single chip integrated MEMS microphone SoC.
[0053]
Microphone component 636 can include a membrane that is exposed to air to enable detection
of acoustic waves (eg, in a lateral configuration). In some embodiments, each of the illustrated
microphone components 636 can be representative of individual microphone devices of a
microphone device array. A first configuration of the microphone assembly 600 is flipped (e.g.,
by a die interconnect structure coupled to the interconnect layer 102c) between the first side S1
of the die and another die or package assembly such as a package substrate. Chip coupling can
be enabled, and the microphone component 636 on the second side S2 can be exposed directly
to external sound.
[0054]
By positioning the membrane membrane on the back side of the die (eg, the second side S2), the
membrane membrane is exposed in the direction of incoming waves when the die is mounted on
another die or substrate (eg, the die Positioning of the die) on the stack of Such an arrangement
allows flip chip attachment of the die to better expose the membrane to acoustic waves as
opposed to wire bonding to a die having a microphone component on the working side of the die.
Using a flip chip configuration can facilitate application of the microphone assembly 600 in
implementations where a smaller footprint is an important factor, such as in a small device such
03-05-2019
16
as a cell phone or wearable device, for example. The positioning of the microphone component
636 on the back side (eg, second side S2) reduces the die size (eg, size) relative to the positioning
of the microphone component 636 on the front side (eg, first side S1) with active circuitry 614
Approximately 50% reduction) can be made possible. The positioning of the membrane on the
back side of the die can further release the front side (e.g., the first side S1) of the die to more
active devices such as the active circuit 614, but the membrane and active circuit 614 and Still
provide a short distance between them. Additionally, active circuitry 614 may be shielded from
the environment in a flip chip configuration. In some embodiments, the microphone component
636 can be fabricated after the active circuit 614 and thus does not affect the processing of the
active circuit.
[0055]
According to various embodiments, one or more TSVs 622 matching the microphone component
636 can be formed through the semiconductor substrate 102a, as can be seen. In some
embodiments, the active circuit 614 can be coupled to the microphone component 636 using
one or more TSVs 622 configured to route multiple electrical signals through the semiconductor
substrate 102a through a specific path. .
[0056]
FIG. 7 shows a schematic perspective view of a microphone assembly 700 according to a second
configuration, according to some embodiments. In a second configuration, an embodiment of a
multi-die in which the active circuit 614 is disposed on a die (e.g., die 702 in the illustrated
example) that is electrically coupled to the die on which the microphone component 636 is
formed is illustrated. Be done. For example, a die having a microphone component 636 is
coupled to the die 702 using the die level interconnect structure 106 to route multiple electrical
signals between the active circuit 614 and the microphone component 636 through a specific
path. You may One or more interconnect structures (eg, vias and / or trenches) 740 identify
multiple electrical signals between the active circuitry 614 of the die 702 and the second side S2
of the die having the microphone component 636 Interconnect layer 102c to be routed through
the For example, one or more interconnect structures 740 may be provided to provide a test
signal and / or reference signal that is used to test the microphone assembly 700 (such as
electronic testing by probing) through a specific path 1 Or can be combined with multiple TSVs
622. In some embodiments, the second configuration may enable probing (eg, reference surface
probing) of the transducer at the second side S2.
03-05-2019
17
[0057]
In some embodiments, die 702 can be further coupled to another die 802. For example, the die
702 is directly coupled to the first side S1 of the die having the microphone component 636 (e.g.
including active devices) and other dies using die level interconnect structure 106 It can have a
non-working side combined with 802. The die 702 can include one or more TSVs configured to
route multiple electrical signals between the die 702 and the other die 802 through specific
paths. In one embodiment, die 702 may be a system on chip including active circuitry 614 for
use in connection with microphone component 636, and die 802 may be memory or logic
circuitry (eg, a processor). In other embodiments, die 802 or a combination of dies (eg, die 702
and die 802) may include active circuitry 614. In yet another embodiment, microphone
component 636 may be electrically coupled to active circuitry 614 on another die using other
suitable techniques, such as, for example, wire bonding or other interposer configurations. it can.
[0058]
FIG. 8 shows a schematic perspective view of a microphone assembly 800 according to a third
configuration, according to some embodiments. In a third configuration, another multi-die
embodiment in which active circuitry 614 is disposed on a die (e.g., die 702 in the illustrated
example) that is electrically coupled to the die on which microphone component 636 is formed.
Is illustrated. The microphone assembly 800 is described in relation to the microphone assembly
700 except that the microphone assembly 800 of FIG. 8 is capable of probing (eg, reference
surface probing) of the transducer at the first side S1. It is compatible with the embodiment. For
example, in some embodiments, the one or more signaling TSVs 722, the interconnect structure
740, and / or the redistribution layer (RDL) mechanism 723 may be a membrane from the first
side S1 by the one or more signaling TSVs 722. It may be formed to allow probing of the
membrane.
[0059]
FIG. 9 schematically illustrates an example of receiver circuitry 900 of a microphone device (eg,
microphone device 104 of FIG. 1), according to some embodiments. Receiver circuit 900 may be
representative of a microphone output receiver circuit. According to various embodiments, the
receiver circuit 900 includes a TSV-MEMS transducer 950 (eg, the capacitive transducer
assembly 300 of FIG. 3) coupled with an amplifier 952, as can be seen, and a phase shift delay
03-05-2019
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954. be able to. In some embodiments, the sound signals of the individual microphones may be
converted into a digital stream by phase shift delay 954. Receiver circuit 900 further includes a
power generator block 956 which can include an on-die high voltage bias generator for TSVMEMS transducer 950 (charge pump circuit), and a silent power regulator for preamplifier 952.
Good. In some embodiments, circuits 314 or active circuits 614 described herein may include the
receiver circuit 900 of FIG.
[0060]
FIG. 10 schematically illustrates an example scheme 1000 of phased array analog processing of
output data that includes a sum of delayed signals, according to some embodiments. The
microphone array signal processing scheme 1000 may be performed by delay sum beamforming
in some embodiments. The phased array may be configured with a focused "beam-like" sensitivity
pattern. For example, microphone acoustic beam polarity patterns (directivity) such as
omnidirectional (hyper) cardioid as well as lobe direction can be controlled electronically. In
some embodiments, the receiver circuit of each individual microphone (eg, receiver circuit 900 of
FIG. 9) may be implemented within deflection delay stage block 1010 (eg, a filter) where
programmable delays may be introduced into the sound signal. Output sound signal can be sent
to Example 1000 includes discrete microphone devices disposed on a variable capacitor array
(e.g., the capacitive transducer assembly 300 of FIG. 3 or the TSV-MEMS transducer 950 of FIG.
9) and a general semiconductor substrate 102a. An amplifier (eg, amplifier 952 of FIG. 9)
configured to process output data of
[0061]
FIG. 11 schematically illustrates an example of a lateral configuration 1100 of a phased array
microphone, according to some embodiments. In the horizontal configuration 1100, the
microphone devices (eg, microphone devices 1102, 1103, 1104) are configured in a horizontal
pattern such that the incident sound waves (sound waves 1105, 1106) are perpendicular to the
aligned microphone devices as seen It is possible. The individual outputs from the microphone
devices (eg, microphone devices 1102, 1103, 1104) may be summed, as seen. In FIG. 10,
programmable delays may be incorporated into the sound signal. In some embodiments,
following FIG. 11, the delayed sound signals of each individual microphone device (eg,
microphone devices 1102, 1103, 1104) may be summed with application of programmable
weighting factors. The signal processing described may be performed by digital signal processing
on the microphone array die. In other embodiments, multiple microphone arrays may be
configured in a vertical configuration, as their form factor is small in size. The microphone device
03-05-2019
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may be configured in other suitable manners in other embodiments.
[0062]
FIG. 12 schematically illustrates an example of a deflected beam using a phased array
microphone, according to some embodiments. The deflected beam pattern 1202 is illustrated
with a non-deflected beam pattern 1204. The peak of the non-deflection pattern 1204 is
centered at 0 degrees and the deflection beam pattern 1202 is shifted relative to the deflection
pattern 1202. The deflected beam pattern 1202 can be deflected towards the noise source for
better noise cancellation. In some embodiments, all of the phased array beamforming circuits
may be disposed on a single die that also includes a phased array microphone.
[0063]
FIG. 13 shows a schematic exploded perspective view of an example of a layout 1300 of
microphone backplate 316 and membrane membrane 326 according to some embodiments. In
various embodiments, the membrane membrane 326 is connected to the back side (second side
S2) of the die 102 to suspend the membrane membrane 326 on the back plate 316 ("legs") Can
be included. For example, as seen in the illustrated embodiment, the membrane 326 includes five
legs that are physically and electrically coupled to corresponding RDL pads 1333. RDL pad 1333
is electrically coupleable with one or more TSVs (eg, ground TSV 322b of FIG. 4), and in some
embodiments physically. The physical and electrical coupling between the RDL pad 1333 and the
legs of the membrane 326 is represented by a vertical dashed line to avoid obscuring aspects of
the invention, but vias, Or any other suitable interconnect structure may be achieved. In some
embodiments, each of the RDL pads 1333 can be electrically coupled to a corresponding ground
TSV (eg, ground TSV 322b of FIG. 4).
[0064]
The back plate 316 can include one or more openings 316a to provide vents into the underlying
chamber (e.g., the chamber 303 of FIG. 4). In some embodiments, RDL pad 1335 is physically
and electrically coupleable to back plate 316. RDL pad 1335 is electrically coupleable with the
underlying TSV, such as signal TSV (eg, signal TSV 322a of FIG. 4), and in some embodiments
physically.
03-05-2019
20
[0065]
Membrane membrane 326 may include more or less legs than shown and / or may be configured
relative to back plate 316 in other suitable configurations in other embodiments. Cross-sectional
area 1327 may be representative of a portion of the cross-sectional area used in connection with
the description of FIGS. 14a-14o.
[0066]
14a-14o show schematic longitudinal side views of the microphone assembly 1400 during
various stages of fabrication, according to some embodiments. The longitudinal side views of
FIGS. 14a-14o, in some embodiments, can include the cross-sectional area 1327 of FIG.
[0067]
Referring to FIG. 14a, formation of circuitry (eg, device layer 102b and / or interconnect layer
102c) on the first side S1 of die 102, through silicon via (TSV) 322 from semiconductor substrate
102a of die 102. The microphone assembly 1400 is shown after formation and formation of the
back plate 316 of the microphone device at the second side S2 of the die 102. In some
embodiments, the TSVs 322 can be formed after the formation of the circuit, and the formation
of the backplate 316 can be performed after the formation of the TSVs. The second side S2 of the
die may be thinned or recessed to provide the die 102 with a reduced thickness prior to forming
the TSV. This act may be performed in other suitable order in other embodiments.
[0068]
Die 102 includes any suitable technique including a temporary carrier assembly, such as carrier
wafer 1444, and an adhesive 1447 configured to form, for example, a temporary bond between
carrier wafer 1444 and die 102. Can be combined using The carrier wafer 1444 may be used to
facilitate handling of the die 102 during fabrication on the second side S 2 of the die 102.
[0069]
03-05-2019
21
The die 102 is coupled to the circuitry of the interconnect layer 102c and configured to route
multiple electrical signals through a specific path between the die 102 and the other components
coupled to the die 102. A level interconnect structure 106 can be included. The interconnect
layer 102c is a plurality of interconnect structures (e.g., trenches and / or vias) configured to
route multiple electrical signals through a specific path between the device layer 102b and the
die level interconnect structure 106. Can contain layers of Device layer 102 b may include active
devices such as transistors or other components of circuitry for use in connection with the
operation of the microphone device.
[0070]
The TSVs 322 may be formed through the semiconductor substrate 102a, and at least some of
the TSVs 322 may be electrically coupled between the device layer 102b or the interconnect
layer 102c and the components of the microphone device on the second side S2 of the die 102. It
may be electrically coupled to the device layer 102b and / or the interconnect layer 102c to
route signals through specific paths. In some embodiments, the individual TSVs of TSV 322 can
include barrier and / or seed layer 366, insulating layer 364 (eg, oxide), and metal filled portion
362 that are bonded as seen.
[0071]
One or more passivation layers can be formed to protect the underlying components from
exposure to water, oxygen, or other contaminants. In some embodiments, the passivation layer
320a may be formed on the semiconductor substrate 102a at the second side S2 of the die 102.
In some embodiments, passivation layer 320a may be deposited prior to forming TSVs 322
through the second side S2 of die 102. Passivation layer 320a may be comprised of any of a wide
variety of suitable materials including, for example, silicon nitride (SiN) or silicon carbide (SiC).
[0072]
The back plate 316 may be formed on the passivation layer 320 a and the TSV 322. In some
embodiments, the backplate 316 may be comprised of a barrier and / or seed layer 1316, and a
metal 1416 such as, for example, copper disposed on the barrier and / or seed layer 1316. The
03-05-2019
22
backplate 316 may be formed using conventional techniques to fabricate the redistribution layer
(RDL). In some embodiments, passivation layer 320b may be formed on backplate 316 and
passivation layer 320a, as seen. Passivation layer 320b may be comprised of similar materials as
described for passivation layer 320a.
[0073]
Referring to FIG. 14b, as can be seen, the microphone assembly 1400 is shown after depositing a
photosensitive material 1460, such as, for example, photoresist, for coating the second side S2.
Photosensitive material 1460 may be patterned using, for example, a lithographic process (eg,
exposure / development) to form openings (eg, openings 1460a, 1460b, 1460c) in
photosensitive material 1460. For example, the one or more openings 1460a can be formed on
one or more portions of the backplate 316 that are electrically and physically coupled to the thin
film membrane, and the one or more openings 1460b, 1460c can be , (For vents) openings in
passivation layers 320a, 320b may be formed over desired areas.
[0074]
Referring to FIG. 14c, as can be seen, the microphone assembly 1400 is shown after etching the
patterned photosensitive material 1460 to extend the openings 1460a, 1460b, 1460c through
the passivation layers 320a, 320b. The etch process can expose the underlying metal 1416 of
the backplate 316 or the semiconductor material of the semiconductor substrate 102a. In some
embodiments, the etching process can include, for example, dry etching, such as plasma etching.
The etching process can include other suitable techniques in other embodiments.
[0075]
Referring to FIG. 14d, the microphone assembly 1400 is shown after the photosensitive material
1460 has been removed. Photosensitive material 1460 may be removed, for example, using any
suitable resist strip and / or cleaning process.
[0076]
03-05-2019
23
Referring to FIG. 14e, the microphone assembly 1400 is shown after depositing and patterning a
sacrificial material 325 on the second side S2 of the die 102. The sacrificial material 325 may be
patterned such that the sacrificial material 325 is configured to provide a structural scaffold and
/ or mold to form a thin film membrane on the sacrificial material 325. For example, in some
embodiments, the sacrificial material 325 may be formed to fill the openings 1460b and 1460c
while leaving the openings 1460a exposed. In some embodiments, the sacrificial material 325
may be formed at a temperature below the processing temperature used in connection with
peeling the adhesive 1447. This temperature can be from about 175 ° C to about 200 ° C. The
sacrificial material 325 can comprise any suitable material including, for example, polypropylene
carbonate material, photoresist, and buffer layer material and the like.
[0077]
Referring to FIG. 14f, as can be seen, the microphone assembly 1400 is illustrated after
depositing the membrane film 326 on the second side S2 of the die 102. Membrane film 326 is
deposited using any suitable technique, including, for example, physical vapor deposition (PVD),
chemical vapor deposition (CVD), plasma enhanced CVD, and / or atomic layer deposition (ALD).
It can contain layers. In some embodiments, membrane membrane 326 includes passivation
layer 320b, sacrificial material 325, and an adhesion layer disposed on metal 1416 of backplate
316, and a membrane metal layer disposed on the adhesion layer. A stack of layers (not shown)
may be included, including a capping layer disposed on the membrane metal layer. In one
embodiment, the adhesion layer comprises titanium nitride (TiN), the membrane metal layer
comprises aluminum (Al), and the capping layer comprises TiN. Aluminum can have etch
selectivity compatible with the downstream etch process (e.g., XeF2) that can be used. Membrane
membrane 326 can comprise other suitable materials in other embodiments. For example, the
membrane metal layer may be comprised of copper or gold in other embodiments.
[0078]
Referring to FIG. 14g, the microphone assembly 1400 is shown after depositing and patterning
the photosensitive material 1464 on the membrane film 326. For example, photosensitive
material 1464 can be exposed and developed to provide an opening over membrane film 326
where removal of membrane film 326 is desired.
[0079]
03-05-2019
24
Referring to FIG. 14h, the microphone assembly 1400 is shown after removal of the unprotected
portion of the membrane 326 by etching. The etching process can include, for example, wet or
dry etching techniques. In one embodiment where the membrane 326 comprises a stack of TiN /
Al / TiN, a chlorine based dry etch process can be used.
[0080]
Referring to FIG. 14i, the microphone assembly 1400 is shown after the photosensitive material
1464 has been removed. Photosensitive material 1464 may be removed, for example, using any
suitable resist strip and / or cleaning process.
[0081]
Referring to FIG. 14j, the microphone assembly 1400 after depositing and patterning the cavity
layer 1466 is illustrated. In some embodiments, the cavity layer 1466 can be comprised of a
polymer such as an epoxy based material or other suitable material. The polymer may, in some
embodiments, be thick, photosensitive and permanent. The material of the cavity layer 1466 can
be deposited using any suitable technique to coat the second side S2 of the die 102, including,
for example, a spin-on process and the like. A cavity is formed in the cavity layer 1466 on the
backplate 316 and membrane membrane 326 such that the cavity layer 1466 forms a periphery
for partially accommodating the backplate 316 and membrane membrane 326 as seen. You may
In some embodiments, the cavities may be formed by patterning (eg, exposure / development).
The curing process may be performed on the deposited material of the cavity layer 1466, in
some embodiments.
[0082]
Referring to FIG. 14k, the microphone assembly 1400 is shown after removal of the sacrificial
material 325. The sacrificial material 325 may be removed using any suitable technique,
including, for example, thermal decomposition or wet / dry etching techniques. The gap formed
by the removal of the sacrificial material 325 may be filled with air.
[0083]
03-05-2019
25
Referring to FIG. 141, the microphone assembly 1400 is illustrated after forming the chamber
303 in the semiconductor substrate 102a. According to various embodiments, the chamber 303
can be formed by an etching process through the openings in the passivation layers 320a, 320b.
For example, in one embodiment, xenon difluoride (XeF2) plasma etching is approximately room
temperature due to the high selectivity for many materials, including silicon dioxide, silicon
nitride, titanium nitride, aluminum, copper, gold, and many polymers. May be used to etch the
silicon of the semiconductor substrate 102a isotropically in the gas phase. Etching of
semiconductor substrate 102a to form chamber 303 may be performed through air holes (eg,
openings 316a in FIG. 4) formed through passivation layers 320a, 320b. Other suitable etching
processes and / or conditions can be used to form the chamber 303 in other embodiments. In
some embodiments, one or more TSVs 322 can be configured to provide support pillars for the
backplate 316 in the area of the chamber 303, as can be seen.
[0084]
Referring to FIG. 14m, microphone assembly 1400 is illustrated after covering and / or enclosing
membrane membrane 326 and backplate 316 with lid 1434. FIG. In some embodiments, the lid
1434 can include a lid wafer having an adhesive 1436, as can be seen, which is on the surface to
form a bond between the lid wafer and the cavity layer 1466. The lid 1434 and the cavity layer
1466 form an encapsulation around the membrane 326 and the back plate 316.
[0085]
The lid 1434 may be comprised of any of a wide variety of suitable materials including, for
example, silicon, stainless steel, polymeric substrates such as glass reinforced epoxy or epoxy
composites, or glass. Adhesive 1434 may be comprised of any of a wide variety of suitable
materials including, for example, underfill and / or molding compound materials.
[0086]
For example, a bond may be formed between the lid 1434 and the cavity layer 1466 using any
suitable technique, including thermal curing to harden the adhesive 1434a. The encapsulation
formed by the lid 1434 and the cavity layer 1466 can protect the components of the microphone
03-05-2019
26
device from mechanical damage during subsequent handling and / or processing, for example,
during a wafer stripping process.
[0087]
Referring to FIG. 14n, the microphone assembly 1400 is illustrated after the die 102 in which the
microphone device is contained is removed from the temporary carrier (eg, the carrier wafer
1444 in the illustrated embodiment). According to various embodiments, carrier wafer 1444 is
released from die 102 using a thermal process to soften or degrade adhesive 1447. In some
embodiments, the stripping process can include thermally contacting both sides of the
microphone assembly 1400 of FIG. 14m with the robot blade and the processing chuck. In such
embodiments, the confined microphone device may be protected from damage during such
handling by the lid 1434.
[0088]
The lid 1434 can also protect microphone device components during the singulation process of
the die 102. For example, the die 102 can be mounted on a mylar dicing frame having the
microphone side of the wafer attached to the adhesive on the dicing frame for singulation. The
lid 1434 can protect the microphone device when the singulated die is removed from the dicing
frame and positioned on the tape and reel.
[0089]
Referring to FIG. 14 o, the microphone assembly 1400 is illustrated after forming the opening
1434 a through the lid 1434 to provide a mouthpiece for the microphone assembly 1400.
Openings 1434a may be formed using any suitable technique, including, for example, mechanical
drilling and / or laser drilling. In some embodiments, the openings 1434a can be formed after
singulation and / or final packaging of the microphone assembly 1400 to reduce the risk of
damage to the membrane 326 during such processing.
[0090]
03-05-2019
27
FIG. 15 schematically illustrates a flow diagram for a method 1500 of fabricating a microphone
assembly (eg, microphone assembly 400, 500, or 1400 of FIG. 4, FIG. 5 or FIG. 14o, respectively)
according to some embodiments. Show. Method 1500 can be adapted to the embodiments
described in connection with FIGS. 1-4, and vice versa.
[0091]
At 1502, the method 1500 includes a first side (eg, the first side S1 of FIG. 14a), a second side
disposed relative to the first side (eg, the second side of FIG. 14a). S2) and providing a
semiconductor substrate (eg, semiconductor substrate 102a of FIG. 14a) having an
interconnection layer on the first side of the semiconductor substrate (eg, interconnection layer
102c of FIG. 14a). In some embodiments, the semiconductor substrate can further include a
device layer (eg, device layer 102b of FIG. 14a) disposed on the first side between the
interconnect layer and the semiconductor substrate.
[0092]
At 1504, method 1500 can include forming through-silicon vias (TSVs) (eg, TSVs 322 in FIG. 14a
or TSVs 322a, 322b, 322c in FIG. 4) through the semiconductor substrate. In some embodiments,
the TSV can be formed through the second side of the semiconductor substrate after forming the
interconnect layer and / or the device layer. The TSV is connected between the first side of the
semiconductor substrate on which circuits and / or interconnections of the active device are
formed and the second side of the semiconductor substrate on which components of the
microphone device are formed. The signal may be configured to be sent through a specific path.
For example, in one embodiment, the TSV may be configured to send an electrical signal between
the active device of the device layer and the microphone device through a specific path.
[0093]
At 1506, method 1500 can include forming a microphone device (eg, microphone device 104 of
FIG. 1) electrically coupled to the TSV on a second side of the semiconductor substrate. In some
embodiments, forming the microphone device can include forming a backplate (e.g., backplate
316 of FIG. 4 or FIG. 14o) on the second side of the semiconductor substrate. The backplate may
be electrically and / or physically coupled to the TSV. In some embodiments, forming the
backplate may include patterning a redistribution layer that includes a metal.
03-05-2019
28
[0094]
In some embodiments, forming the microphone device can further include forming a membrane
membrane (eg, membrane membrane 326 of FIG. 4 or FIG. 14o) on the backplate to form a
capacitor. . In some embodiments, forming the membrane comprises: depositing a sacrificial
material (eg, sacrificial material 325 of FIG. 14e) on the backplate; depositing a material of the
membrane membrane on the sacrificial material; Removing the sacrificial material.
[0095]
In some embodiments, forming the microphone device further comprises forming a chamber (eg,
chamber 303 of FIG. 4 or FIG. 141) in the semiconductor substrate adjacent to or below the
membrane membrane. Can. The chamber may be formed in accordance with the techniques
described in connection with FIG.
[0096]
In some embodiments, forming the microphone device can include covering the components of
the microphone device with a lid (eg, lid 334 in FIG. 4 or lid 1434 in FIG. 14m). The
semiconductor substrate is coupled with a temporary carrier (e.g., carrier wafer 1444 of FIG.
14m) during at least a portion of the process of forming the microphone (e.g., the acts described
in connection with FIGS. 14a-14m). The semiconductor substrate may be separated from the
temporary carrier after the microphone device is covered by the lid.
[0097]
The various operations are described in turn as a plurality of individual operations, to best assist
in understanding the claimed subject matter. However, the order of descriptions should not be
construed as implying that these operations need to be order dependent. Embodiments of the
present disclosure may be incorporated into the system using any suitable hardware and / or
software to configure as desired.
03-05-2019
29
[0098]
FIG. 16 can include a microphone assembly as described herein (eg, microphone assembly 400,
500, or 1400, respectively, of FIG. 4, FIG. 5 or FIG. 14o) according to some embodiments. 1
schematically illustrates an example system (e.g., computing device 1600). Components of
computing device 1600 may be housed in an enclosure (e.g., housing 1608). Motherboard 1602
can include several components including, but not limited to, processor 1604 and at least one
communication chip 1606. The processor 1604 may be physically and electrically coupled to the
motherboard 1602. In some implementations, the at least one communication chip 1606 may
also be physically and electrically coupled to the motherboard 1602. In a further
implementation, communication chip 1606 may be part of processor 1604.
[0099]
Depending on the application, computing device 1600 may include other components that may
or may not be physically and electrically coupled to motherboard 1602. These other components
may include microphone devices, volatile memory (eg, dynamic random access memory (DRAM)),
non-volatile memory (eg, read only memory (ROM)), flash memory, graphics processor, digital
signal processor, Crypto Processor, Chipset, Antenna, Display, Touch Screen Display, Touch
Screen Controller, Battery, Audio Codec, Video Codec, Power Amplifier, Global Positioning System
(GPS) Device, Compass, Geiger Counter, Accelerometer, Gyroscope, Speaker , Cameras, and mass
storage devices such as hard disk drives, compact discs (CDs), digital versatile discs (DVDs), etc.
But it is not limited to these.
[0100]
Communication chip 1606 can enable wireless communication for transfer of data to computing
device 1600. The term "wireless" and its derivatives may be used to describe circuits, devices,
systems, methods, techniques, communication channels, etc. that can communicate data by use
of modulated electromagnetic radiation through non-individual media . The term does not imply
that the associated device does not include any wire, although in some embodiments it may not
include a wire. The communication chip 1606 may be Wi-Fi (IEEE 802.11 family), IEEE 802.16
standard (eg, IEEE 802.16-2005 correction), arbitrary correction, update, and / or revision (eg,
advanced LTE project, ultra mobile broadband) Any of several wireless standards or protocols,
including but not limited to the Institute of Electrical and Electronics Engineers (IEEE) standards,
03-05-2019
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including the Long Term Evolution (LTE) project with the (UMB) project (also referred to as
"3GPP2"), etc. May be implemented. Broadband Wireless Access (BWA) networks compatible
with IEEE 802.16 are commonly referred to as WiMAX (abbreviation for Worldwide
Interoperability for Microwave Access) networks, which are compliant and interoperable for the
IEEE 802.16 standard. It is a certification mark for products which passed the sex test. The
communication chip 1606 is a pan-European digital mobile communication system (GSM
(registered trademark)), a general packet radio service (GPRS), a universal mobile communication
system (UMTS), a high-speed packet access (HSPA), an evolved HSPA (E-HSPA) Or can operate
according to the LTE network. Communication chip 1606 may be GSM® Evolved High Speed
Data Transmission (EDGE), GSM EDGE Radio Access Network (GERAN), Universal Terrestrial
Radio Access Network (UTRAN), or Evolved UTRAN (E- Can operate according to UTRAN). The
communication chip 1606 includes code division multiple access (CDMA), time division multiple
access (TDMA), digital enhanced cordless telecommunications (DECT), evolution data
optimization (EV-DO), derivatives thereof, and 3G, 4G, It can operate in accordance with 5G and
any other wireless protocol specified below.
Communication chip 1606 may operate in accordance with other wireless protocols in other
embodiments.
[0101]
The computing device 1600 can include multiple communication chips 1606. For example, the
first communication chip 1606 may be dedicated to short range wireless communication such as
Wi-Fi and Bluetooth (registered trademark), and the second communication chip 1606 may be
GPS, EDGE, GPRS, CDMA, WiMAX, It may be dedicated to long distance wireless communication
such as LTE, EV-DO, and others.
[0102]
The processor 1604 of the computing device 1600 can include a microphone assembly as
described herein (e.g., microphone assembly 400, 500 or 1400 of FIGS. 4, 5 and 14o,
respectively). For example, the die 102 of FIGS. 1 and 2 can be mounted on a package substrate
(for example, the package substrate 121) mounted on a circuit substrate such as the
motherboard 1602. The term "processor" refers to any device or part of a device that processes
electronic data from a register and / or memory and converts the electronic data into other
electronic data that can be stored in the register and / or memory May be mentioned.
03-05-2019
31
[0103]
Communication chip 1606 can also include a microphone assembly as described herein (eg,
microphone assembly 400, 500, or 1400 of FIGS. 4, 5, and 14o, respectively). In a further
implementation, another component (eg, SoC, ASIC, memory device, or other integrated circuit
device) contained within computing device 1600 is a microphone assembly (eg, as described
herein) , FIG. 4, FIG. 5 and FIG. 14o, respectively, may comprise the microphone assembly 400,
500 or 1400).
[0104]
In various implementations, the computing device 1600 can be a mobile computing device,
laptop, netbook, notebook, ultra book, smartphone, tablet, personal digital assistant (PDA), ultra
mobile PC, cell phone, desktop computer, It may be a server, a printer, a scanner, a monitor, a set
top box, an entertainment control unit, a digital camera, a portable music player, or a digital
video recorder. In further implementations, computing device 1600 may be any other electronic
device that processes data. Example
[0105]
In accordance with various embodiments, the present disclosure describes an apparatus. Example
1 of the apparatus includes a semiconductor substrate having a first side and a second side
disposed opposite the first side, and an interconnect layer formed on the first side of the
semiconductor substrate. Through-silicon vias (TSVs) formed through the semiconductor
substrate and configured to send a plurality of electrical signals between the first side of the
semiconductor substrate and the second side of the semiconductor substrate through a specific
path; The microphone device may be formed on the second side of the semiconductor substrate
and electrically coupled to the TSV. Example 2 further comprises a device layer formed on the
first side of the semiconductor substrate, and the TSV is configured to send multiple electrical
signals between the active device of the device layer and the microphone device through a
specific path The apparatus of Example 1 can be included. Example 3 may include the apparatus
of Example 2, wherein the TSV is a first TSV of the plurality of through silicon vias (TSVs) and the
second TSV of the plurality of TSVs comprises the microphone device. It is configured to
structurally support and is not configured to send multiple electrical signals between the device
03-05-2019
32
layer and the microphone device through a particular path. Example 4 may include the apparatus
of Example 1, in which the microphone device is disposed on the second side of the
semiconductor substrate and to form a back plate coupled with the TSV and a capacitor. And a
membrane membrane coupled to the back plate. Example 5 can include the apparatus of Example
4, wherein the microphone device further comprises a chamber formed in the semiconductor
substrate adjacent to the membrane membrane. Example 6 can include the apparatus of Example
4 further comprising a lid configured to cover the microphone device. A seventh embodiment is a
passivation layer disposed on the second side of the semiconductor substrate, the passivation
layer disposed between at least a portion of the back plate and the semiconductor substrate, and
disposed on the passivation layer. And the cavity layer in which the cavity is formed, wherein the
membrane may be disposed in the cavity, and the lid may further include the cavity layer
combined with the cavity layer. Example 8 can include the apparatus of Example 6, wherein the
lid includes a mouth hole. Example 9 can include the apparatus of Example 6, further comprising
a flip chip substrate including the aperture, wherein the semiconductor substrate is part of a die
coupled with the flip chip substrate in a flip chip configuration and the lid is Coupled with a flip
chip substrate to form a cavity, a die is disposed within the cavity, and the aperture provides
access for sound to the cavity.
Example 10 can include the device of any of Examples 1-5, wherein the semiconductor substrate
is part of a first die and the first die is coupled to a second die, The second die includes receiver
circuitry or sensor circuitry of the microphone device. Example 11 may include the device of any
of Examples 1-5, wherein the microphone device is one of a plurality of microphone devices
formed on the second side of the semiconductor substrate. .
[0106]
According to various embodiments, the present disclosure describes a method. Method Example
12 provides a semiconductor substrate having a first side and a second side disposed opposite to
the first side, and providing an interconnect layer on the first side of the semiconductor
substrate. And forming a through silicon via (TSV) through the semiconductor substrate, wherein
the TSV is configured to pass a plurality of electrical signals between the first side of the
semiconductor substrate and the second side of the semiconductor substrate through a specific
path. Forming and transmitting, and forming a microphone device electrically coupled to the TSV
on the second side of the semiconductor substrate may be included. Example 13 can include the
method of Example 12, wherein providing the semiconductor substrate further comprises
providing a semiconductor substrate in which the device layer is formed on the first side of the
semiconductor substrate, The TSV is configured to send multiple electrical signals between the
active device of the device layer and the microphone device through a specific path. Example 14
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may include the method of Example 12, wherein forming the microphone device comprises
forming a backplate coupled to the TSV on the second side of the semiconductor substrate, and a
capacitor. Forming a membrane on the backplate to form Example 15 can include the method of
Example 14, wherein forming the membrane membrane comprises depositing a sacrificial
material on the backplate and depositing a material of the membrane membrane on the
sacrificial material And removing the sacrificial material. Example 16 can include the method of
Example 14, further comprising forming a chamber in the semiconductor substrate adjacent to
the membrane membrane. Example 17 can include the method of example 12, further
comprising covering the microphone device with a lid. Example 18 can include the method of
Example 17, wherein the semiconductor substrate is combined with the temporary carrier during
at least a portion of the process of forming the microphone device, the semiconductor substrate
including the microphone device. After covering with the lid, it is separated from the temporary
carrier.
[0107]
According to various embodiments, the present disclosure describes systems (eg, computing
devices). Embodiment 19 of the system is a semiconductor device having a circuit board, a die
electrically coupled to the circuit board, the first side, and the second side disposed opposite to
the first side. Material, an interconnect layer formed on the first side of the semiconductor
substrate, formed through the semiconductor substrate, and specific electrical signals between
the first side of the semiconductor substrate and the second side of the semiconductor substrate
A through silicon via (TSV) configured to be routed through the path, and a die including a
microphone device formed on the second side of the semiconductor substrate and electrically
coupled to the TSV may be included. Example 20 can include the computing device of Example
19, in which the die is coupled to the package substrate and the package substrate is coupled to
the circuit substrate. Example 21 can include the computing device of Example 19, which
includes an antenna, a display, a touch screen display, a touch screen controller, a battery, an
audio codec, a video codec, a power amplifier, a global positioning system A mobile computing
device that includes one or more of a (GPS) device, a compass, a Geiger counter, an
accelerometer, a gyroscope, a speaker, and a camera.
[0108]
Various embodiments described above (including, for example, "and" may be "and / or") including
the alternative (or) embodiments of the embodiments described above in conjunctive form (and)
Any suitable combination of forms can be included. Additionally, some embodiments include one
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34
or more products (eg, non-transitory computer readable media) having instructions stored
thereon that, when executed, effect the actions of any of the above embodiments. be able to.
Moreover, some embodiments can include devices or systems having any suitable means for
performing the various operations of the above embodiments.
[0109]
The above description of the illustrated implementations, including those described in the
Abstract, is not intended to be exhaustive or to limit the embodiments of the present disclosure
to the precise forms disclosed. It is not intended. While specific implementations and examples
are described herein for purposes of illustration, various equivalent modifications are possible
within the scope of the disclosure, as those skilled in the relevant art will recognize.
[0110]
These modifications can be made to the embodiments of the present disclosure in light of the
above detailed description. The terms used in the following claims should not be construed as
limiting the various embodiments of the present disclosure to the specific implementations
disclosed in the specification and the claims. Rather, the scope is to be determined entirely by the
following claims, which are to be construed in accordance with established doctrines of claim
interpretation.
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