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JPH02308700

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DESCRIPTION JPH02308700
[0001]
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a
microphone in which a sound receiving unit is constituted by a semiconductor device. [Prior Art]
FIG. 2 is a simplified view showing the structure of a sound receiving portion of a conventional
microphone. In this figure, 11 is a sound receiving diaphragm, 12 is a signal output, 13 is a
magnet, 14 is a coil, the coil 14 is fixed to the sound receiving diaphragm 11, and the magnet 13
is inserted into the coil 14 coil. ing. However, since the magnet 13 is not fixed to the sound
receiving diaphragm 11, when the sound receiving diaphragm 11 is vibrated by a sound wave, an
electromotive force is generated in the coil 14 due to a change in magnetic flux, and a signal
output 12 corresponding to the sound wave is obtained. . [Problems to be Solved by the
Invention] In the conventional microphone as described above, since the coil 14 and the sound
receiving diaphragm 11 are coupled, the sensitivity is lowered by the vibration absorption at the
coupling portion, and the structure There was a problem of becoming messy. The present
invention has been made to solve the above-mentioned problems, and it is an object of the
present invention to obtain a microphone capable of improving sensitivity and simplifying the
structure of a sound receiving unit. [Means for Solving the Problems] In the microphone
according to the present invention, the sound receiving surface is constituted by a semiconductor
strain gauge. In the present invention, the vibration of the sound wave is detected as a change in
the gauge resistance value of the semiconductor strain gauge, and is directly converted into an
electrical signal. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Piezoelectric
conversion elements are widely known as elements that electrically convert mechanical stress
changes and vice versa. Among these, there are elements (piezoresistive elements) based on the
piezoresistance effect, that is, resistance change due to stress, and elements (piezoelectric
elements) based on the piezoelectric effect, and the piezoelectric element is usually used for an
ultrasonic transducer or the like. Piezoelectric resistance elements using bulk such as Si and Ge
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are used as semiconductor strain gauges with high sensitivity. The present invention is
characterized in that a sound wave receiving surface of a microphone is configured by a
semiconductor strain gauge, and an embodiment thereof will be described below. FIG. 1 is a
structural view showing a sound receiving unit of an embodiment of the microphone of the
present invention. In this figure, 1 is a silicon strain gauge as a semiconductor strain gauge, 2 is a
diaphragm (diaphragm), and 3 is a signal output. In the microphone of the present invention, the
diaphragm 2 formed on the silicon strain gauge 1 receives a direct sound wave to cause
distortion, and the gauge resistance value changes to generate the signal output 3. Here, the
gauge resistor is a bridge and is formed with the diaphragm 2.
That is, according to the present invention, it is not necessary to provide a complicated structure
with many movable parts as in the prior art, and there is no coupling part, so that a high
sensitivity microphone can be realized without vibration absorption. Although the silicon strain
gauge 1 is used as the semiconductor strain gauge in the above embodiment, it goes without
saying that other semiconductor strain gauges using Ge or the like may be used. [Effects of the
Invention] As described above, according to the present invention, the acoustic wave receiving
surface is formed of a semiconductor strain meter, so there is no electrical conversion
relationship between the coil and the receiving diaphragm or the magnet and the film, and the
structure is simplified. In addition, since the semiconductor having high sensitivity is used, the
sensitivity can be greatly improved and the frequency band can be broadened.
[0002]
Brief description of the drawings
[0003]
FIG. 1: 1 :!
FIG. 2 is a structural view showing an embodiment of the microphone of the present invention,
and FIG. In the figure, 1 is a silicon strain gauge, 2 is a diaphragm, and 3 is a signal output.
Figure 1 Procedure Amendment (Spontaneous) Flat 1, Indication of the Case Patent @ 1-129316
2, Title of the Invention Microphone 3, Relationship with the Case Who Makes a Correction
Patent Applicant Address Chichida-ku, Tokyo 2-2 No. 3 Name (601) Mitsubishi Electric Co., Ltd.
Representative director Shiho Mamoru 4, Agent residence Marunouchi 2-chome, Chiyoda-ku,
Tokyo 2) 3) column of the detailed description of the invention of the object statement of
correction 2) Brief description of the drawings and the drawing 6, contents of correction (1),
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page 1, line 14, page 3, line 14, line 18 “signal output J, all as“ signal output terminal ” to
correct. (2) Similarly, "signal output 12" on page 1 line 20 to page 2 line 1 is corrected to "signal
output". (3) Similarly, “3 is a signal output” on page 4, line 20, and “3 is a signal output
terminal”. (4) In the drawing, correct Figure 1 as attached. Figure 1 above.
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