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JPS4839721

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DESCRIPTION JPS4839721
■ Pick-up cartridge [Co., Ltd.] Akira Akira 44-36855 [phase] Application Akira 44 (1969) May 8
[phase] Inventor Oda Fujio Kadoma Ogata Kamon Shin 1006 Matsushita Electric Industrial Co.,
Ltd. Internally same Osamu Osamu Osamu-same place ■ Applicant Matsushita Electric Industrial
Co., Ltd. Kadoma City Oji Kadoma 1006 [Phase] Agent patent attorney Toshio Nakao 1 person
BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a cross-sectional view of the principle and
configuration of a semiconductor vapor deposition film element constituting a unit conversion
part of the pickup cartridge of the present invention, and FIG. 2 is a diagram showing the
electromechanical conversion principle using the element. Fig. 3 is an internal mechanism
perspective view showing an embodiment of the pickup car according to the present invention)
IJ, Fig. 4 is a sectional view, Fig. 5 is an exploded perspective view, and Fig. 6 is an operation
explanatory view. is there.
DETAILED DESCRIPTION OF THE INVENTION The present invention provides a pickup cartridge
having a novel configuration using the piezoresistance effect of a semiconductor vapor
deposition film element formed on a flexible insulating thin film substrate as a mechanicalelectrical conversion element. An embodiment of the pickup cartridge of the present invention
will be described below with reference to the drawings. First, FIG. 1 shows the construction
principle of a semiconductor vapor deposition film element used in the pickup cartridge of the
present invention, and 1 is a substrate, and its material is heat resistance such as polyimide,
polyamide or mica, insulation, and very flexible. It is a film of several tens of microns thick which
is rich in sex. An electrode 2.2 'is formed by vacuum deposition of a metal such as nickel,
chromium or gold on the above 1. An appropriate impurity is mixed with a semiconductor
material having a large piezoresistance effect such as silicon, germanium, indium antimonide, etc.
using a suitable [111111] evaporation mask so as to bridge between the electrodes 2.2 '. It is a
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piezoresistive element in which a material is vapor-deposited in a strip shape. Therefore, when
the semiconductor piezoresistive element 3 is subjected to a tension change in the direction
connecting the electrodes 2.2 'and a deformation due to the entire bending stress, a change
appears in the interelectrode terminal resistance due to the mechanical strain. FIG. 2 shows the
principle of the stress conversion device using the semiconductor deposited film element having
the above configuration, and 4 is an insulating base for fixing the semiconductor deposited film
element, and a recess 5 is formed in part thereof The electrode 2.2 'is fixed to the upper edge of
the recess 5 so that the piezoresistive element 3 of the semiconductor deposited film element is
positioned to be extended to the recess 5. As a result, the piezoresistive element 3 is held under
constant tension. The tension is not particularly large, and is merely an extent that wrinkles and
sags do not occur in the portion of the membrane. Now, when the structure 6 is welded at the
central portion of the semiconductor deposition film element and vibration as shown by the
arrow 7 is applied, the piezoresistive element 3 receives a change in tension parallel to the film
as shown by the arrow 8.8 '. . Due to this tension change, the central part of the membrane is
simultaneously subjected to mechanical deformation. Thus, the resistance change proportional to
the vibration stress of the structure 6 is generated in the piezoresistor 3 as the piezoresistance
element 3 is subjected to the tension change and the mechanical deformation, and this changes
the battery or the DC power supply 9 and the load resistance 10. And the closed circuit formed
by the above-mentioned piezoresistive element 3 converts it into a voltage change at the end of
the load resistor 10, and its AC component is given to an appropriate external amplification
circuit through the capacitor 11 and converted into acoustic energy.
The cartridge of the present invention is configured using the electromechanical transducer
having the above-described principle configuration, and the specific configuration thereof will be
described below with reference to FIGS. 3 to 6 for stereo. 12 is a needle tip for trespassing the
sound groove of the record to detect vibration [111111] EndPage: 1, 13 is made of a light alloy
material for guiding the vibration of the needle tip 12 to the electromechanical transducer A
cantilever 14 is a very thin wire for forming a fulcrum of the needle tip 12 and the cantilever 13
when the needle tip 12 and the cantilever 13 vibrate according to the sound groove, and is
supported and fixed to the inner end of the cantilever 13 by the spacer 15 . Reference numeral
16 denotes a support for adjusting and fixing the above-mentioned extra fine wire 14 to the
cartridge main body, fixed with a slight gap of 1 inch or less from the end of the cantilever 13 so
that the needle tip 12 and the cantilever 13 can freely vibrate by the extra fine wire 14 Is
configured. Reference numeral 17 denotes a structure having two projections 18 and 19 formed
in a substantially V-shape at substantially the same plane with a substantially perpendicular
angle of pressure applied to the semiconductor deposited film element constituting the
electromechanical transducer to give resistance change. In the body, at the tip end of each of the
projections 18 and 19, a pressure contact piece 20 ° 21 whose end face is finished in a smooth
conical shape is provided. The structure 17 has a hole 22 provided at the root where the
projections 18 and 19 are integrated, and is inserted and fixed at substantially the end of the
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cantilever 13, and the stereo vibration transmitted by the needle tip 12 is V-shaped Are
separated into the protuberances 18, 19. Reference numeral 23 denotes a braking support
material which serves both as a resonance damping effect of a portion constituted by the needle
tip 12, the cantilever 13 and the structural body 17 and their support to an insulating base
described later. Reference numerals 24 and 25 denote insulating thin film substrates made of an
insulating material having flexibility corresponding to 1 in FIGS. 1 and 2 described above, and
include semiconductor piezoresistive elements 26.27 and their electrodes 28, 28. '. 29. 29 'are
formed under the same conditions as in FIG. Denoted at 30.31 are recesses formed on both side
edges in the longitudinal direction of the insulating thin film substrate 24.25. This is to increase
the resistance change of the semiconductor piezoresistive element 24.25 due to the tension
change. is there. 32 is a rectangular parallelepiped insulating base, and the terminal rod 37 has
bent pieces 33, 34, 35, 36 whose one ends are respectively bent inward on two opposing upper
and lower surfaces thereof, 3B and 39.40 are fixed, respectively, and the electrodes 28.28 'and
29.29 of the semiconductor deposited film element in which the zone resistance element 26.27 is
formed on the semiconductor chip W444444 on the insulating thin film substrate 24.25. 'Is
joined to the bent pieces 33 and 34. 35. 36 of the terminal rods 37. 38 and 39. 40, respectively,
and the semiconductor piezoresistive element 26. 27 is positioned between the bent pieces 33
and 34 and 35 and 36. Be done.
Then, the support 16 is inserted into the hole 41 of the insulating base 32 and fixed by, for
example, an adhesive agent, and in this state, the braking support 23 abuts against the insulating
base 32 to press the structure 17 The piece 20.degree. 21 is brought into contact with the
piezoresistive element 26.degree. 27 part of the semiconductor deposition film element with a
slight pressure. The pick-up cartridge of the present invention is configured as described above,
and its operation will be described with reference to FIG. FIG. 6 is a schematic diagram showing
the cartridge of the present invention in a simplified manner. The same reference numerals are
given to the same parts as those in the above-mentioned constitution, and now it is assumed that
the needle tip 12 is moved by the vibration shown by the arrow 42. The cantilever 13 is pivoted
in the direction of the arrow 42 centering on a vibration fulcrum 43 formed by the extremely
thin wire 14. As a result, the pressure-contacting piece 20 of the structure 17 is pivoted about
the vibration fulcrum 43 in the direction indicated by the arrow 44. The semiconductor
piezoresistive element 26 is pressurized by the rotation of the pressure contact piece 20, and a
change in resistance according to the pressure is detected by the terminal rod 37.38. In this case,
the press-contacting piece 21 of the structure 17 does not pivotally move about the axis shown
by the dotted line as shown by the arrow 45, and does not contribute to the resistance change of
the semiconductor piezoresistive element 27 either. This operation is in the case where the tip
12 is moved in the direction shown by the arrow 42. However, when the tip 12 is in the opposite
direction to the arrow 42, the pressing force of the semiconductor piezoresistive element 26 is
reduced and It will occur. When the needle tip 12 is moved in the direction perpendicular to the
arrow 42, the pressure contact piece 21 applies pressure or pressure to the semiconductor
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piezoresistive element 27 this time, so that the element 27 changes its internal resistance, On the
other hand, the pressure contact piece 20 only rotates, and the resistance change of the
semiconductor piezoresistive element 26 does not occur at all. Thus, the stereo vibration of the
needle tip 12 is separated and detected. As described above, according to the pickup cartridge of
the present invention, as described above, the other end portion of the cantilever
rl111111EndPage: 2 having the needle tip at one end is formed with a V-shaped protrusion
substantially orthogonal to a plane substantially orthogonal to the cantilever. The semiconductor
piezoresistive element changes tension respectively in two semiconductor deposited film
elements in which the semiconductor piezoresistive element is formed by depositing the
structure and forming the semiconductor piezoresistive element by evaporation with the
electrode at the upper end on the flexible insulating thin film substrate. Arranged in parallel on
the insulating base so as to obtain reception on one pile, and abut each of the parts forming the
two projections of the above-mentioned structure on the semiconductor deposition film element,
and via the cantilever from the needle tip The vibration of the structure causes the
semiconductor piezoresistive element to undergo a change in tension, and the change in tension
of the semiconductor piezoresistive element causes And, according to the present invention,
since the tension change of the semiconductor piezoresistive element is obtained by the bending
stress of the structure, the material of the structure or the thickness of the protrusion or the like
is detected. It is possible to freely select the mechanical impedance of the needle tip by changing
the value of the needle tip, and hence to obtain a cartridge excellent in sound groove tracking
performance of the needle tip, and to damp the oscillators such as the needle tip and the
cantilever. And, since the amount of pressure applied to the semiconductor piezoresistive
element and the like of the protrusion of the structure can be adjusted, it is possible to obtain one
having excellent electromechanical transducing characteristics.
Further, according to the present invention, since the protrusion of the structure has a V-like
shape and has a simple related configuration in which two semiconductor vapor deposition film
elements are arranged in parallel, it is compact and lightweight and easy to assemble. The
semiconductor piezoresistive element is a pure resistor and can be detected extremely faithfully
to the groove without being affected by induction damage, and its industriality is large. It will be
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