close

Вход

Забыли?

вход по аккаунту

?

JPS4912642

код для вставкиСкачать
Patent Translate
Powered by EPO and Google
Notice
This translation is machine-generated. It cannot be guaranteed that it is intelligible, accurate,
complete, reliable or fit for specific purposes. Critical decisions, such as commercially relevant or
financial decisions, should not be based on machine-translation output.
DESCRIPTION JPS4912642
■ Production method of pickup ■ Special lighting 45-10643 [Fa] Application Akira Akira 4.5
(1970) February 9 @ inventor Murai Masayuki Machida Machida city Hirosucho 500 Tsurukawa
housing complex 6 of 6 buildings 棟 Applicant Pioneer shares Company 50 Tokyo Ota Ward
Omori Nishi 4 50 agents Attorney Hiroaki Tazawa 2 people outside
BRIEF DESCRIPTION OF THE DRAWINGS FIGS. 1 to 5 show the order of manufacturing steps
according to an embodiment of the present invention, FIG. 1 is a longitudinal sectional side view
of an elastic material laminated on a substrate, and FIG. Fig. 3 is a partially enlarged sectional
view of a state in which an electrode and a semiconductor thin film are formed, Fig. 4 is a plan
view of a state in which the semiconductor thin film is photoetched, and Fig. 5A is a product FIG.
5B is a front view of the same, and FIG. 6 is a front view of the product according to another
embodiment.
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method of
manufacturing a pickup utilizing the piezoresistive effect of a semiconductor thin film. The
pickup as described above is only used experimentally because it is difficult to manufacture. The
present invention has been made based on the above-mentioned circumstances, and is intended
to manufacture the above-mentioned pickup easily and in mass production. An embodiment of
the present invention will be described below with reference to the drawings. As shown in FIG. 1,
an elastic material 2 such as polyurethane foam is adhered to the lower surface of a substrate 1
made of an elastic thin metal plate (10 to 30 μm thick) such as beryllium steel. Next, as shown
in FIG. 2, the elastic material 2 is subjected to ultrasonic processing or the like to form unit
bodies 3, 3 and 4 of a shape in which the cantilever attachment portion 2a and the support
portion 2b project downward. ... and [111 111] form a separated portion 4, 4 °----with the
elastic material 2 removed. Further, as shown in FIG. 3, a titanium thin film 5 is formed on the
04-05-2019
1
entire upper surface of the substrate 1 by vapor deposition, and then the surface layer portion is
anodically oxidized to form unit bodies 3, 3. The electrode film 6 of A1 etc. is deposited using a
mask so as to correspond to the mounting portion 2a of... And a semiconductor thin film 7 having
a piezoresistance effect such as Ge; Cds is formed by deposition. Thereafter, the semiconductor
thin film 7 is subjected to photoetching or the like to form each of the units 3, 3. The
semiconductor thin film 7 is formed so that it remains independently between the mounting
portion 2a and the support portion 2b in a meandering line shape, and the electrode film 6 is
connected to both ends of these. In this case, the semiconductor thin film 7 may be formed at
once by mask evaporation in the form of a serpentine line whose both ends are connected to the
electrode film 6. An insulating film 8 (see FIG. 5) is formed by spray coating or the like to cover
the upper surface of the device as described above, and each unit 3.3. --- ---------------------------------part 4 Disconnect from .... Then, as shown in FIGS. 5A and 5B, the base of the cantilever 10
having the odd meter 9 at its tip is fitted to the mounting member 11 made of the same material
as the elastic material 2, and the mounting member 11 is elastic While adhering to the lower
surface of the mounting portion 2a of the substance 2, the tip of the cantilever 10 is engaged
with and supported by the groove formed on the lower surface of the support portion 2b.
Reference numeral 12 in FIG. 5A denotes a canner lever damper provided on the mounting
member 11. Further, FIG. 6 shows a pickup for stereo, which is obtained by substantially the
same steps as those shown in FIGS. , And one cantilever 10 is attached thereto by substantially
the same means as described above.
It should be noted that the two downward motions obtained by the sound groove trace of the odd
meter 9 as described above are bent on the meandering semiconductor film 7 through the elastic
material 2 and the substrate 1 [111111] EndPage: 1, and the change in electrical resistance due
to the stress of the semiconductor thin film 7 is taken out, and the same operation as the
conventional pickup of this kind is performed. In the present invention, in order to adhere the
elastic substance to the lower surface of the substrate, it may be obtained by means such as
injection molding of a polymer or hot pressing of rubber, not necessarily as in the embodiment. It
is not limited to the body. As described above, according to the present invention, it is possible to
relatively easily obtain a pickup utilizing the piezoresistance effect by applying the technique for
forming a semiconductor thin film, bonding an elastic material to the lower surface of the
substrate, and the substrate After a step of forming a thin film such as a ketan oxide film in order
to satisfactorily deposit a semiconductor thin film on the upper surface of the film, and a step of
forming a semiconductor thin film having an electrode film and a piezoresistance effect on the
thin film, Since each unit body is separated, mass production is easy, and furthermore, since each
step of F111111N is carried out simultaneously or continuously in a large number for each unit
body, each of these steps particularly thin film, The formation of the electrode film, the
semiconductor thin film, the etching of the semiconductor thin film, etc. are performed under the
same conditions, and a homogeneous product can be obtained. Process of bonding an elastic
substance to the lower surface of a substrate made of an elastic metal thin plate, and a process of
04-05-2019
2
forming a thin film such as a titanium oxide film on the upper surface of the substrate in order to
satisfactorily adhere the semiconductor thin film; Forming an electrode film and a semiconductor
thin film having a piezoresistance effect in which both ends thereof are connected to the
electrode film, and the plurality of units are integrally formed on the same substrate by these
processes; Thereafter, it is cut into each unit body, and a cantilever is attached to the elastic
material thereof. [1111111EndPage: 2
04-05-2019
3
Документ
Категория
Без категории
Просмотров
0
Размер файла
11 Кб
Теги
jps4912642
1/--страниц
Пожаловаться на содержимое документа