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JPS5522948

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DESCRIPTION JPS5522948
■ Pressure-sensitive field-effect transistor App. No. 49-3140 Japanese Patent Application No.
45-14370 [Phase] Application No. 45 (1970) Feb. 19 @ Inventor Kazaki Hakuso Minamisakishi
Minamisakishi Nakano 80 address Mitsubishi Electric Corporation North In the Itami Works
[Phase] Inventor Ono Katsuhiro Amagasaki City Minami Shimizu Nakano Line Address Mitsubishi
Electric Corporation Kita Itami Works 0 Inventors Oku Taiji Itami City Inuka Letter Main Address
1 Mitsubishi Electric Corporation Kita Itami Works O Applicant Mitsubishi Electric Corporation
[present] Attorney Patent Attorney Kanno Nobori-甥 1 For Japanese Patent Publication No. 4121427 (JP, Bl) Japanese Patent Publication No. 43-18231 (JP, B1)
BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a cross-sectional view showing the structure of
a thin film field effect transistor which converts a conventional mechanical displacement into an
electric signal, and FIG. 2 is a pressure sensitive tyv effect transistor as a prior art of the present
invention. FIG. 3 is a cross sectional view showing a structure formed in a hybrid as one
embodiment of a pressure sensitive field effect transistor of the present invention. In the
drawings, the same parts and corresponding parts are indicated by the same reference numerals.
Detailed Description of the Invention The present invention forms a field effect transistor on a
polarized piezoelectric substrate and applies mechanical strain or pressure to the material to
change its characteristics, thereby providing mechanical displacement. The present invention
relates to an element for converting into an electrical signal, and more particularly to an element
suitable for an integrated circuit. Figure 1 shows the structure of a conventional thin film fieldeffect transistor, in which 1 is an insulating substrate, 2 is a source, 3 is a drain, 4 is a
semiconductor layer, and 5 is an insulator composed of a ferroelectric. One piezoelectric
material, 6 is a gate electrode, 7 is a load resistance, and El is a source-drain drive voltage. In this
conventional thin film field effect transistor, it is not necessary to externally supply a bias voltage
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between the source 2 and the gate electrode 6 to polarize and use the piezoelectric substance 5
composed of a ferroelectric substance. It is However, in this conventional thin film field effect
transistor, it is difficult to polarize the piezoelectric substance 5 composed of a ferroelectric and
to hold the polarization. Therefore, in this configuration, it is necessary to externally supply a
bias voltage e between the source 2 and the gate 6. The prior art of the present invention seeks
to ameliorate the disadvantages of the two prior art by making the polarized piezoelectric
material an insulating substrate. FIG. 2 shows a prior art example of the present invention, in
which 5 also serves as a substrate with a polarized piezoelectric material (eg, a ferroelectric
material). A semiconductor layer 4 is formed on the substrate 5 by evaporation or the like. In the
prior art of the present invention, the polarized piezoelectric substance 5 itself serves not only as
the insulating substrate 1 of the field effect transistor but also as an insulator between the gate
electrode and the semiconductor. The voltage e is generated between the piezoelectric substance
5 and the semiconductor layer 4 according to the application of pressure, and the voltage is
applied between the source 2 and the gate electrode 6, and the current flowing from the source 2
to the drain 3 Can be modulated to generate the desired electrical signal across the load resistor
7. As described above, according to the prior art of the present invention, although the
disadvantages of the above-described conventional example can be corrected, it is very difficult
to form the semiconductor layer 4 by depositing the semiconductor material on the piezoelectric
material 5 by evaporation. It is missing [111111] EndPage: There is one point. Further, even if
the semiconductor layer 4 can be formed, the semiconductor layer 4 is likely to be peeled if it is
distorted due to mechanical displacement because it is in a state of being easily peeled off. This is
not suitable as a pressure sensitive field effect transistor having a function of converting
mechanical displacement into an electrical signal.
The present invention also seeks to overcome the disadvantages of the prior art and the prior art.
FIG. 3 shows an embodiment of the present invention, which has a semiconductor region 4
formed by converting the surface portion of the piezoelectric substance 5 into a semiconductor
by ion implantation. As the piezoelectric substance in this case, one having a perovskite structure
such as BaTiO3> SrTiO3, PbTiO3 or the like is used. These are reduced slightly or doped with
rare earth elements (Y, Ce, etc.) Nb, Ta, Bi, etc. to be semiconductive. As described above, making
the surface region of the piezoelectric substance 5 into a semiconductor region by the ion
implantation method does not require formation of a spatial boundary layer between the
piezoelectric substance 5 and the semiconductor region. And the semiconductor region are
integrated. The electrodes 2 and 3 may be disposed at the boundaries of 4 and 5 in FIG. 3 as the
present invention. As a partial modification of FIG. 3, the metal plate of the gate electrode 6 can
also function as the elastic substrate 1. In addition, by using a polarized piezoelectric
semiconductor material as another embodiment of the present invention, it is possible to
constitute a field effect transistor and operate as a pressure-sensitive element by itself. In the
semiconductor material itself, charges may be trapped by microscopic space charge effects,
polarization domain [111111] or piezoelectric domains, etc., and the current may be modulated
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according to strain or pressure. As applications of the present invention to other applications,
stereo pickups, microphones, vibration detection elements, mechanical strain detection elements,
and with some modification, switching elements, delay elements, memory elements, readout
elements, (thin television Etc.) (which is an element with a delay function and a switching
function) and the like. The switching effect can also be enhanced by using P-channel FETs. Of
course, the piezoelectric substance and the FET may be simply connected directly. As described
above, according to the present invention, since the surface portion of the piezoelectric material
layer is made into a semiconductor region formed by converting the semiconductor into a
semiconductor by ion implantation, the characteristics of the prior art are not compromised. It
can be easily formed and can convert mechanical displacement into an electrical signal without
peeling off from the semiconductor region by mechanical displacement of the piezoelectric
substance, and is very suitable for application to integrated circuits and the like. I can do it.
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