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JP2007214855

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DESCRIPTION JP2007214855
To provide a speaker-equipped flexible substrate capable of reducing manufacturing costs. A
flexible substrate 1 with a speaker is adjacent to a flexible substrate 2 having flexibility, a
plurality of thin film speakers 3 arranged in a matrix on the flexible substrate 2, and the thin film
speakers 3 respectively. And a plurality of thin film transistors 4 serving as switching elements
disposed on the flexible substrate 2. Each thin film transistor 4 includes a gate electrode 5
formed on the flexible substrate 2, a gate insulating film 6 stacked on the flexible substrate 2
while covering the gate electrode 5, and a gate electrode 5 on the gate insulating film 6. From the
organic semiconductor material laminated on the gate insulating film 6 while covering the source
electrode 7 and the drain electrode 8 formed so as to sandwich at least a part of the opposing
regions with each other and the source electrode 7 and the drain electrode 8 And the organic
semiconductor layer 9 comprising [Selected figure] Figure 2
Speaker with flexible board
[0001]
The present invention relates to a flexible substrate with a speaker used for various electronic
devices such as a cellular phone, a personal computer, and a television.
[0002]
In general, a speaker that emits sound is indispensable for electronic devices, but the installation
location of the speakers is often restricted due to the recent miniaturization and design of
electronic devices.
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Therefore, in recent years, a thin film speaker is deployed on a flexible flexible substrate so that
the speaker can be attached on the display screen of the electronic device or the speaker can be
attached along the curved surface of the case of the electronic device. A flexible substrate with a
speaker is provided (see, for example, Patent Document 1).
[0003]
The thin film speaker in the flexible substrate with speaker includes a piezoelectric film as a
diaphragm and electrode layers respectively laminated on both sides of the piezoelectric film,
and is formed on the flexible substrate to be flexible to some extent Is acceptable.
[0004]
In addition, on the flexible substrate here, a thin film transistor is disposed adjacent to the thin
film speaker.
The thin film transistor functions as a switching element for a thin film speaker, and includes a
gate electrode formed on a flexible substrate, a gate insulating film stacked on the flexible
substrate while covering the gate electrode, and the gate A semiconductor stacked on a gate
insulating film covering a source electrode and a drain electrode formed on the insulating film so
as to sandwich at least a part of a region facing the gate electrode and the source electrode and
the drain electrode And layers. The semiconductor layer here is made of an inorganic
semiconductor material such as silicon, and a portion stacked on the gate insulating film between
the source electrode and the drain electrode functions as a channel layer. The flexible substrate
with a speaker is configured to include such a thin film transistor, and as a whole, it is possible to
allow a certain degree of free bending. JP 2005-33505 A
[0005]
However, in the conventional flexible substrate with speaker described above, since the
semiconductor layer which is a component of the thin film transistor is made of an inorganic
semiconductor material, a high temperature process is required in the manufacturing process,
and a large scale integrated clean room and vacuum device etc. Equipment is also required.
Therefore, it is difficult to reduce the manufacturing cost.
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2
[0006]
Then, this invention is made in view of the said problem, and it aims at providing the flexible
substrate with a speaker which can reduce manufacturing cost.
[0007]
In order to achieve the above object, a flexible substrate with a speaker according to the present
invention is disposed on a flexible substrate having flexibility, a thin film speaker disposed on the
flexible substrate, and the flexible substrate adjacent to the thin film speaker. The thin film
speaker, which is a switching element for the thin film speaker, comprises: a piezoelectric film as
a diaphragm; and an electrode layer laminated on both sides of the piezoelectric film. The thin
film transistor includes a gate electrode formed on the flexible substrate, a gate insulating film
stacked on the flexible substrate while covering the gate electrode, and a region facing the gate
electrode on the gate insulating film. Source electrode and drain electrode formed so as to
sandwich at least a part of If, while covering these source electrode and a drain electrode are
laminated on the gate insulating film, and an inorganic semiconductor layer made of an inorganic
semiconductor material, the flexible substrate with a speaker including, characterized by the
following points.
A plurality of the thin film speakers and the thin film transistors are arranged in a matrix on the
flexible substrate, and each thin film transistor includes an organic semiconductor layer made of
an organic semiconductor material instead of the inorganic semiconductor layer, and the organic
semiconductor layer The organic semiconductor material that constitutes is pentacene, the
material of the source electrode and the drain electrode is gold, and the material of the flexible
substrate is a polymer resin.
[0008]
With such a configuration, the semiconductor layer that is a component of the thin film transistor
is made of an organic semiconductor material, and by utilizing the features of the organic
substance, dissolving the organic substance in a solvent makes use of printing technology such
as a rotary press or inkjet. The circuit can be easily manufactured, and in particular, the thin film
transistor can be manufactured by a low temperature process.
[0009]
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Further, in order to achieve the above object, a flexible substrate with a speaker according to the
present invention includes a flexible flexible substrate, a plurality of thin film speakers arranged
in a matrix on the flexible substrate, and each of these thin film speakers A plurality of thin film
transistors disposed on the flexible substrate adjacent to the flexible substrate and serving as
switching elements for the thin film speakers, the thin film speakers each having a piezoelectric
film as a diaphragm, and the piezoelectric film An electrode layer respectively laminated on both
sides of the conductive film, and each of the thin film transistors comprises a gate electrode
formed on the flexible substrate and a gate insulating film laminated on the flexible substrate
while covering the gate electrode And at least a part of a region facing the gate electrode on the
gate insulating film It includes a source electrode and a drain electrode formed so as to sandwich
at each other, are stacked on the gate insulating film while covering these source electrode and
drain electrode, an organic semiconductor layer made of an organic semiconductor material.
[0010]
With such a configuration, the semiconductor layer that is a component of the thin film transistor
is made of an organic semiconductor material, and by utilizing the features of the organic
substance, dissolving the organic substance in a solvent makes use of printing technology such
as a rotary press or inkjet. The circuit can be easily manufactured, and in particular, the thin film
transistor can be manufactured by a low temperature process.
[0011]
Here, it is preferable that the said organic-semiconductor material which comprises the said
organic-semiconductor layer is pentacene.
Preferably, the material of the source electrode and the drain electrode is gold.
Preferably, the material of the flexible substrate is a polymer resin.
[0012]
According to the flexible substrate with a speaker of the present invention, since it can be
manufactured by a low temperature process, the manufacturing cost can be reduced.
[0013]
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Hereinafter, an embodiment of the flexible board with a speaker of the present invention will be
described in detail with reference to the drawings.
FIG. 1 is a perspective view of a flexible substrate with a speaker according to an embodiment of
the present invention, and FIG. 2 is a cross-sectional view of a thin film transistor portion of the
flexible substrate with a speaker.
[0014]
As shown in FIG. 1, the speaker-equipped flexible substrate 1 according to the present
embodiment is largely composed of a flexible flexible substrate 2 and a plurality of thin film
speakers 3 arranged in a matrix on the flexible substrate 2; Each thin film speaker 3 is
constituted by a thin film transistor 4 disposed on the flexible substrate 2 adjacent to each other.
FIG. 1 shows an example in which the thin film speakers 3 and the thin film transistors 4 are
arranged in 3 rows × 4 columns.
[0015]
Here, examples of the material of the flexible substrate 2 include polymer resins such as
polyethylene naphthalate (PEN), polyimide (PI), and polyethylene terephthalate (PET).
[0016]
Although not shown, each thin film speaker 3 includes a piezoelectric film as a diaphragm and
electrode layers respectively stacked on both sides of the piezoelectric film, and a film is formed
on the flexible substrate 2. Being able to tolerate some degree of freedom.
As this thin film speaker 3, an electrode layer is formed by performing ion plasma treatment on
the surface of a transparent PVDF (polyvinylidene fluoride) film having a piezoelectric property,
PLZT (Pb-La-Zr-Ti) An example is illustrated in which an electrode layer made of aluminum or the
like is vapor-deposited on both sides of a piezoelectric film such as piezoelectric ceramic).
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5
[0017]
In addition, each thin film transistor 4 functions as a switching element for the thin film speaker
3 adjacent to each other, and as shown in FIG. 2, the gate electrode 5, the gate insulating film 6,
and the source electrode 7 are large. And drain electrode 8 and semiconductor layer 9. The gate
electrode 5 is formed on the flexible substrate 2, and the gate insulating film 6 is stacked on the
flexible substrate 2 while covering the gate electrode 5.
[0018]
The source electrode 7 and the drain electrode 8 are both formed on the gate insulating film 6
and formed so as to open at least a part of the region facing the gate electrode 5 on the gate
insulating film 6 and sandwich the part therebetween. It is done. Examples of materials of the
source electrode 7 and the drain electrode 8 include metals such as gold and silver.
[0019]
The semiconductor layer 9 is stacked so as to cover the source electrode 7 and the drain
electrode 8 and to cover the gate insulating film 6 between them. The semiconductor layer 9
here is made of an organic semiconductor material, and a portion 9 a laminated on the gate
insulating film 6 between the source electrode 7 and the drain electrode 8 functions as a channel
layer. Examples of the organic semiconductor material include pentacene, copper nirocyanine,
oligothiophene, polythiophene and the like.
[0020]
In practice, between the source electrode 7 and the gate insulating film 6, and between the drain
electrode 8 and the gate insulating film 6, self-assembled monolayers 7a and 8a of an organic
material with a thickness of 1 nm or less are formed. It is preferable to intervene. In particular,
since electrons flow directly from the source electrode 7 to the channel layer 9a, the electron
mobility is improved, and as a result, the performance of the thin film transistor 4 is improved.
The self-assembled monolayers 7a and 8a referred to here are films utilizing the property that an
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organic molecule adheres to itself by one molecule by a chemical reaction when subjected to a
predetermined treatment.
[0021]
In such a thin film transistor 4, it is possible to easily manufacture a circuit utilizing a printing
technique such as a rotary press or an ink jet by dissolving the organic matter in a solvent by
making use of the feature of the organic matter. However, since the semiconductor layer 9 which
is a component of the thin film transistor 4 is made of an organic semiconductor material, the
manufacture of the flexible substrate 1 with a speaker, particularly the thin film transistor 4 can
be performed by a low temperature process. Therefore, the manufacturing cost can be reduced.
[0022]
Moreover, since the process is a low temperature process, when the flexible substrate 2 is made
of a polymer resin, the thin film transistor 4 has good compatibility with the flexible substrate 2.
Therefore, the flexible substrate 1 with a speaker can allow flexible and flexible bending as a
whole including the thin film transistor 4.
[0023]
Moreover, such a flexible board 1 with a speaker can be attached on the display screen with
which an electronic device is equipped, or can be attached along the curved surface of the case of
an electronic device. Moreover, since a plurality of thin film speakers 3 and thin film transistors 4
are provided in a matrix, it is possible to appropriately switch the thin film speakers 3 to be
output by each thin film transistor 4, and a realistic sound output can be obtained. There is also
an advantage.
[0024]
Others The present invention is not limited to the above embodiment, and various modifications
can be made without departing from the spirit of the present invention.
[0025]
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The present invention is useful for a speaker-equipped flexible substrate used in various
electronic devices.
[0026]
It is a perspective view of a flexible substrate with a speaker which is one embodiment of the
present invention.
It is sectional drawing of the thin-film transistor part in the flexible substrate with a speaker
which is one Embodiment of this invention.
Explanation of sign
[0027]
Reference Signs List 1 flexible substrate with speaker 2 flexible substrate 3 thin film speaker 4
thin film transistor 5 gate electrode 6 gate insulating film 7 source electrode 8 drain electrode 9
organic semiconductor layer
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