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JPH01120198

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DESCRIPTION JPH01120198
[0001]
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a
method of manufacturing a speaker diaphragm, and more particularly to a method of efficiently
manufacturing a ceramic speaker diaphragm. [Prior Art] Conventionally, as diaphragms used for
audio equipment such as speakers, those made of metal or those obtained by applying a ceramic
coating to a metal substrate have been proposed, but these have insufficient acoustic
characteristics. Because of that, in recent years, the ceramic diaphragm has been studied.
[Problems to be Solved by the Invention The sintering method etc. can be considered as a method
of manufacturing the co-ceramic diaphragm, but the ceramic sintered body has problems in
terms of dimensional shrinkage and can be satisfied with product accuracy Was not suitable for
the speaker diaphragm. On the other hand, there is also a method of burning and removing the
substrate after coating the ceramic on the burnable and removable substrate, but this method is
laborious and unsuitable for industrial production. [Means for Solving the Problems] The method
for manufacturing a speaker diaphragm according to the present invention has a predetermined
shape of ceramic, which is different from the ceramic in the coefficient of thermal expansion and
is substantially non-reactive with each other. The substrate is vapor-deposited on the inner
surface or outer surface of the surface roughness 1S or less, and then the deposited layer is
peeled off from the substrate to produce a diaphragm. Hereinafter, the present invention will be
described in detail with reference to the drawings. 1 (a) to 1 (C) and 2 (a) to 2 (c) are crosssectional views for explaining a method of manufacturing a speaker diaphragm according to the
present invention. In the present invention, as shown in FIG. 1 (a) or FIG. 2 (a), the outer surface
of this base 1 is used using a base 1.2 having a shape conforming to the shape of the target
speaker diaphragm. 1a or the inner surface 2a of the substrate 2 is vapor-deposited with a
ceramic by vapor deposition to form a ceramic vapor-deposited layer 3.4 (FIGS. 1 (b) and 2 (b)).
That is, as shown in FIG. 1, when the vapor deposition layer 3 is formed on the outer surface 1a
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of the substrate 1, the substrate having a shape slightly smaller than the desired diaphragm is
used, and as shown in FIG. In the case of forming the vapor deposition layer 4 on the inner
surface 2 a of the substrate, vapor deposition is performed using a substrate having a shape
slightly larger than the desired diaphragm. The materials of these substrates 1.2 differ greatly
from the thermal expansion coefficient of the ceramic to be vapor-deposited so that the ceramic
to be vapor-deposited on the outer surface 1a and the inner surface 2a can be easily peeled off. It
does not substantially react with the ceramic. Then, the vapor deposition layer 3.4 is peeled off
utilizing the difference in thermal expansion with the substrate 1.2 (FIGS. 1 (c) and 2 (C)).
In the present invention, when ceramic deposition is performed on the outer surface 1a of the
substrate 1 by, for example, the CVD method, which is a type of vapor deposition method, first, at
least the outer surface 1a portion of the substrate 1 Heat to The heating method is not
particularly limited, but in the case where the shape of the substrate 1 is simple or conductive,
simple high frequency induction heating of the apparatus configuration is advantageous. As the
heating method, in addition, an external heating method of heating from the outside of the
reaction vessel, a laser heating method, etc. may be employed. The CVD reaction gas is supplied
to the outer surface 1a of the substrate 1 thus heated to cause a CVD reaction, thereby
depositing the deposition layer 3 of the CVD reaction deposit (see FIG. 1 (b)). There is no
particular limitation on the deposition thickness, that is, the thickness of the speaker diaphragm,
and it is generally about 30 to 150 μm. This thickness can be easily adjusted by adjusting the
supply amount or heating time of the CVD reaction gas. After depositing the vapor deposition
layer 3 to a desired thickness, the vapor deposition layer 3 is peeled off from the substrate 1
(FIG. 1 (C)). The material of the substrate 1 has a coefficient of thermal expansion different from
that of the deposited layer 3 which is a deposit of the CVD reaction, and moreover, the deposited
layer 3 does not substantially react with the precipitate of the CVD reaction. It can be easily
peeled off. A method such as applying a light mechanical impact to the interface between the
deposition layer 3 and the substrate 1 for peeling off the deposition layer 3 or peeling or using
the difference in thermal expansion coefficient by heating or cooling the vicinity of the interface
Is adopted. In the method of FIG. 1, when the vapor deposition Fi 3 and the substrate 1 are
peeled off using the difference in thermal expansion coefficient at the time of cooling, if the outer
vapor deposition layer 3 shrinks smaller by cooling, It becomes possible to peel off both very
easily. Therefore, in this case, for example, AA20s having a relatively large coefficient of thermal
expansion. It is advantageous to use a substrate such as ZrO 2 or MgO and deposit SiC or the like
having a relatively low coefficient of thermal expansion on the outer surface of the substrate.
Conversely, as shown in FIG. 2, when the vapor deposition Fi 14 is formed on the inner surface 2
a of the substrate 2 and peeled off using the difference in the coefficient of thermal expansion
during cooling, the vapor deposited layer 4 on the inner side is cooled. Preferably shrinks more.
Therefore, in this case, it is advantageous to use, for example, a substrate such as C having a
relatively low coefficient of thermal expansion, and to deposit AJ 1203 or the like having a
relatively high coefficient of thermal expansion on the inner surface of the substrate. In the
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present invention, the outer surface 1a of the substrate 1 or the inner surface 2a of the substrate
2 on which the vapor deposition layer is formed in this manner is a smooth surface having a
surface roughness of 1S or less.
The surface shape of the substrate is transferred as it is to the surface of the vapor deposition
layer 3.4 of the CVD deposit peeled off from the substrate 1.2 attached to the outer surface 1a of
the substrate 1 or the inner surface 2a of the substrate 2 In the present invention, since the
deposition layer formation surface of the substrate is a smooth surface having a surface
roughness of 1S or less in the present invention, a diaphragm having an extremely smooth
surface is obtained, and a finish is obtained. Processing is also reduced. Moreover, the vapor
deposition layer formed in the smooth surface in this way is very excellent in peelability. The
peeled vapor-deposited layer is subjected to post-treatments such as polishing if necessary, and
then made into a product. Although the CVD method is employed in the above description, other
vapor deposition methods such as the PVD method may be used in the present invention.
[Operation] By vapor deposition on the inner surface or outer surface of a substrate, a ceramic
diaphragm conforming to the surface shape of the substrate can be produced as an integral
product of high purity ceramic having a desired shape with high productivity. It becomes
possible to manufacture easily and efficiently. Thus, the obtained diaphragm is extremely dense
and has high strength. In addition, since a substrate having an extremely smooth surface is used,
a diaphragm having the same smoothness as that of the substrate surface and having excellent
acoustic characteristics can be obtained with good releasability. In addition, since a board |
substrate can be repeatedly used after peeling a vapor deposition layer, it is economical.
EXAMPLES The present invention will be more specifically described below by Examples and
Comparative Examples, but the present invention is not limited to the following Examples as long
as the gist thereof is not exceeded. EXAMPLE 1 A diaphragm for a speaker made of SiC was
manufactured by the method shown in FIGS. 1 (a) to 1 (e). The substrate 1 was heated to 1300 to
1400 ° C. by an external heating method using an Al 2 O 3 substrate having a surface
roughness of 0.1 S by sufficiently polishing the surface 1 a as the substrate 1. Then, Si CIt 4 / CH
4 / H 2 was supplied to the outer surface 1 a of the substrate 1 as a CVD gas to deposit the
deposition layer 3 of the CVD reaction precipitate SiC, and then the gas supply was stopped.
Thereafter, a light impact was given to the vicinity of the interface between the obtained SiC layer
and the substrate 1 to peel off the SiC. An observation of the surface of the obtained SiC plate on
the substrate 1 side showed that the surface had the same smoothness as the smooth surface 1 a
of the A1203 substrate 1 and was sufficiently usable without polishing. . [Effects of the
Invention] As described in detail above, according to the method of manufacturing a diaphragm
for a speaker of the present invention, a ceramic diaphragm for a speaker having high density,
high purity, high strength and remarkably excellent acoustic characteristics is highly produced.
Can be manufactured easily and efficiently, and the cost of the product can be reduced.
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[0002]
Brief description of the drawings
[0003]
1 (a) to 1 (C) and 2 (a) to 2 (c) are cross-sectional views for explaining a method of
manufacturing a speaker diaphragm according to the present invention.
1.2: Substrate, 3.4: Ceramic deposition layer. Agent Patent Attorney Tsuyoshi Shigeno Figure 1
(a) Figure 2 (a)
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