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JPH02117299

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DESCRIPTION JPH02117299
[0001]
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a
capacitor type electrostatic vibration device in which two parallel flat plates are opposed to each
other, and more particularly to a vibration device for ultrasonic oscillation etc. applicable to
ultrasonic radar devices etc. It is. (Conventional technology) The application range of ultrasonic
radars is expanding today, and in the field of automobiles, ultrasonic waves installed in
automobiles are lj-like in pursuit of safety such as collision avoidance and convenience pursuit
such as automatic driving. Radar devices are known. In the manufacture of such an ultrasonic
radar device, development of an ultrasonic oscillation element is indispensable, and as a
conventional ultrasonic oscillation element, one to which the principle of an electrostatic
transducer is applied is known. That is, this oscillating device applies an alternating voltage to
two + i-like electrodes arranged in parallel at a predetermined interval, thereby changing the
electrostatic force between the two electrodes and causing the electrodes to vibrate. For example,
in a capacitor type speaker, a thin metal film made of light titanium with a large Young's
modulus, a titanium alloy, a nickel alloy or the like is used as a vibrating electrode plate, and such
a metal thin film is directly fixed to a case. It is considered as a structure (for example,
Unexamined-Japanese-Patent No. 59-79700). (Section 8 to be solved by the invention) However,
in the above-mentioned prior art, as described above, the vibrating electrode plate is directly
fixed to the case, and an insulator is formed between the two vibrating electrode plates, for
example, a ring The manufacturing process is complicated because the L-shaped spacer
intervenes and the peripheral portion of the movable electrode plate on the movable side is
pressed and held from above and below by the suppression member to stretch and fix the
vibration electrode plate, In addition, it is difficult to form an element using thick film technology
or array technology because of such a structure, and it has been difficult to improve mass
productivity. The present invention has been made in view of such circumstances, and it is an
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object of the present invention to provide an electrostatic vibration device which can be easily
manufactured and whose mass productivity can be improved. (Means for Solving the Problems)
In the electrostatic vibration device of the present invention, a sintered metal film is formed on
each of the substrate and the dielectric thin plate, and the substrate and the dielectric thin plate
on which the sintered metal film is formed respectively It is characterized in that it is made to
face each other through members, and an electrode is formed of the above two metal sintered
films, a diaphragm is formed of the above-mentioned dielectric thin plate, and ultrasonic
oscillation is caused. (Operation) According to the above configuration, one metal sintered film is
formed on the substrate and the other metal sintered film is formed on the dielectric thin plate,
and the electrodes are formed by these metal sintered films. Since the electrodes can be formed
by the thick film technology and the array can be easily formed by this, the manufacture
becomes easy and the mass production efficiency can be raised.
In addition, the dielectric thin plate on which one metal sintered film is formed is supported by
the insulating support member, and if the dielectric thin plate and the insulating support member
are made of a suitable combination of materials, the above-mentioned heating is performed by
heating. The so-called mechanical bonding can be performed between the thin plate and the
support member, and the electrode holding member and the like conventionally required for
holding the electrodes are not required, so that the manufacture is facilitated, and the array can
be also formed. It will be easier. EXAMPLES Examples of the present invention will be described
below with reference to the drawings. FIG. 1 is a schematic view showing an electrostatic vibrator
according to an embodiment of the present invention. This device has a first electrode 2 formed
on a substrate 1 and is further positioned on a film substrate 4 made of dielectric material
supported by an insulating support member 3 so as to be parallel to the first electrode 2. The
second electrode 5 is formed. The substrate 1 is used for manufacturing a conventional hybrid
IC, etc., and is formed of, for example, a dielectric material such as alumina (Ai 203). Like the
substrate 1, the film substrate 4 is also formed of a dielectric material such as alumina (AQ, z 03),
but since it functions as a diaphragm, its thickness is, for example, a thin plate of about 30 to
100 μm. It is formed. As other materials for forming the film substrate 4, for example, aluminum
nitride (A4N), silicon carbide (SIC), boron nitride (BN) or the like can be used. On the other hand,
the first electrode 2 and the insulating support member 3 are formed on the substrate 1, and the
second electrode 5 is formed on the film substrate 4 using screen printing. The two electrodes 2
and 5 are formed of a silver / palladium (Ag / Pd) alloy and have a thickness of, for example,
about 10 μm. In addition, copper (Cu), platinum (Pt), silver (Ag), gold (Au), nickel (N1), platinum
/ gold (Pt / Au) alloy, and further palladium / gold as a material for forming the electrode 2.5. It
is also possible to use a (Pd / Au) alloy or the like. Further, the insulating support member 3 is
made of a glass material, and formed at a position on the substrate 1 not overlapping the first
electrode 2 with a thickness of, for example, about 30 μm. As a glass material, it is possible to
use boron silicate, aluminum silicate, Pb 0 -Zn 0 -BZ 03 based glass, Mg OP 205 based glass, and
the like. By the way, in the prior art in which the movable side electrode was directly supported
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and held, the movable side electrode could not be formed using thick film technology such as
printing, but in the present embodiment, the movable side electrode Since the electrodes 5 are
formed on the film substrate 4, thick film technology such as printing can be used when forming
the electrodes. Therefore, as shown in FIG. 2, the second electrode groups 5a to 5d are arrayed. It
is possible to form the
As shown in FIG. 2, the first electrode groups 2a to 2d and the insulating support member groups
3a to 3d can be similarly formed in an array, and the film substrate 4 is formed on the insulating
support member groups 3a to 3d. Form before mounting. Furthermore, when the insulating
support member 3 is formed of a glass material and the film substrate 4 is formed of a dielectric
material such as alumina as in this embodiment, the insulating support member 3 and the film
substrate 4 are heated by so-called mechanical bonding. Combined. That is, since the dielectric
material such as alumina is porous when the film substrate 4 is placed on the insulating support
member 3 and heated to sinter the rear side electrode 2.5, the above-mentioned material is
melted by the heating. The glass material enters the pores of the film substrate 4 and is in a state
of being stretched, so to speak, whereby the insulator supporting member 3 is strongly bonded
to the film substrate 4. In the present embodiment, heating for sintering is performed by
maintaining a high temperature state of 850 ° C. or more for about 10 to 15 minutes. In the
present embodiment, since the insulating support member 3 and the film substrate 4 are coupled
using such mechanical bonding, it is not necessary to hold the movable side electrode with a
predetermined member as in the prior art, and hence manufacturing Can be simplified, and the
array can be easily formed, and mass production can be promoted. Further, in the present
embodiment, since the film substrate 4 as a dielectric thin plate having a relative dielectric
constant larger than that of air is inserted between the picture electrodes 2 and 5, generation
occurs between the side substrates 2 and 5. The electrostatic force to be applied is larger than
that in the case where the thin film 4 is not provided. Note that this electrostatic force increases
in accordance with the thickness of the film substrate 4 and the relative dielectric constant, so to
increase the oscillation efficiency, if a material with a high relative dielectric constant is selected
as the material of the film substrate 4 Good. The electrostatic vibration device according to the
present invention is not limited to the embodiment described above, and the shape, thickness and
the like of each member can be changed as appropriate. For example, the shape of the insulating
support member 3 may be It is also possible to make it a ring shape surrounding the electrode 2
of 1 and to make the array of elements not only linear but also planar. A driving circuit for
oscillation can be formed on the substrate 4 by using a hybrid IC technology. The configuration
of the present invention can be applied not only to an ultrasonic wave oscillation element but
also to other vibration elements such as an ultrasonic wave detection element. (Effects of the
Invention) As described above, according to the electrostatic vibrator of the present invention,
since the movable side electrode is formed on the film substrate, the electrode can be
manufactured using the thick film technology and the manufacturing process It is possible to
enhance mass production effects as well as
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[0002]
Brief description of the drawings
[0003]
FIG. 1 is a schematic view showing an electrostatic vibration device according to an embodiment
of the present invention, and FIG. 2 is a schematic view showing a state in which a plurality of
devices shown in FIG. 1 are arrayed.
1 ... substrate 2 ... first electrode 3 ... insulating support member 4 ... film substrate 5 ... second
electrode
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