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JPH03240963

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DESCRIPTION JPH03240963
[0001]
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a
diamond film forming apparatus for forming a diamond film used to manufacture a speaker
diaphragm using, for example, a diamond film. [Prior Art] FIG. 2 shows, for example, Surface
Science Volume 10, Volume 1 O, P, ρ. FIG. 1 shows a conventional microwave CVD apparatus
for forming a diamond film shown in the “diamond thin film by the 183-187 rCV D method”,
wherein (1) in the figure is an object to be treated on which a diamond film is formed For
example, it is a substrate made of a simple substance such as silicon or quartz glass. (2) is a
quartz tube into which a mixed gas A of gas and hydrogen (H2) to be a 0.5-5% carbon source
(CH4) is introduced at a pressure of 40 Torr, and (3) is disposed inside the quartz tube. A
mounting body for mounting the object to be treated (1) and maintaining the temperature of the
object to be treated (1) at 800 to 1000 ° C. (4) is a microwave generating 2450 MHz microwave
The oscillator (5) is a waveguide for guiding the microwave emitted from the microwave
oscillator around the mounting body (3) in the quartz tube (2). Next, the operation of the
microwave CVD apparatus configured as described above will be described. First, the object to be
treated (1) is placed on the mounting body (3) in the quartz tube (2), and the temperature of the
object to be treated (1) is made 800 to 1000 ° C. While drawing the inside with a vacuum
pump, a mixed gas of 0.5 to 5% of methane (CH4) and hydrogen (H2) is introduced into the
quartz tube (2) so that the pressure becomes 40 Torr. Then, when the microwave oscillator (4) is
operated, the microwaves emitted from the microwave oscillator (4) are guided by the waveguide
(5) around the mounting body (3) in the quartz tube (2) The mixed gas is converted into a plasma
state (H atom, CH, radical, etc.) by decomposing the mixed gas of methane and hydrogen present
around the object (1). The mixed gas brought into the plasma state reacts and deposits on the
treatment subject (1) disposed in the atmosphere of the mixed gas brought into the plasma state,
and the carbon film containing the diamond and the non-diamond component It is formed on the
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surface of 1). At this time, hydrogen gas selectively removes the graphite component generated
on the object to be treated (1) (C + 41 (.fwdarw.CH4 .uparw.), Extracting the H component in the
carbon film (C + H + H- + C + H2), etc. It is believed to work as Hydrogen atoms formed by
decomposition of hydrogen gas reduce non-diamond components from the carbon film formed
on the surface of the object (1) and form a diamond film of high purity on the surface of the
object (1) It plays an important role in
[In the microwave CVD apparatus configured as described above, if it is tried to keep the nondiamond component low as a result of the experiment, the methane (CH 4) gas It is necessary to
set the flow rate to 1% or less of the flow rate of hydrogen gas 、 2 and there is a problem that
the deposition rate of the diamond film is slow. Moreover, even when the diamond film is formed
under the condition that the flow rate of methane gas is about 1% with respect to the flow rate of
hydrogen gas, Raman spectroscopic analysis shows that it is 1333 cm- 'as shown in FIG. An
amorphous diamond component was observed at 1550 cm- 'in addition to the observed diamond
peak. The present invention has been made in view of the above-mentioned point, and an object
thereof is to obtain a diamond film forming apparatus capable of efficiently removing nondiamond components and forming a high quality diamond film on an object at a high speed. It is
[Means for Solving the Problems] In the diamond film forming apparatus according to the
present invention, there is provided a storage portion for storing an object to be processed on
which a diamond film is formed, and a first gas containing a carbon component introduced
therein. A first gas inlet and a second gas inlet located upstream of the first gas inlet and into
which a second gas containing hydrogen gas is introduced; A main body in which a first plasma
forming portion is positioned in a flow path through which a gas is mixed and a second plasma
forming portion is positioned in a flow path through which a second gas flows, and first and
second plasmas of the main body It comprises a microwave supply means for supplying a
microwave to the formation portion. [Operation] According to the present invention, the
microwave supply means supplies the microwave to the second plasma forming portion of the
main body, and the second gas of the second gas containing hydrogen gas in the second plasma
forming portion of the main body. A part is in a plasma state, but a microwave is supplied to the
first plasma forming portion of the main body to plasma the first gas and the second gas
containing the carbon component in the first plasma forming portion of the main body In this
state, hydrogen atoms in the plasma state to be present around the object are sufficiently
extracted from the introduced hydrogen molecules. An embodiment of the present invention will
be described below with reference to FIG. 1. In the figure, (1) is an object to be treated on which
a diamond film is formed, such as a single substance such as silicon or quartz glass And the like.
(3) A mounting body for holding the processing object (1) and keeping the temperature of the
processing object (1) at 800 to 1000 ° C.
(10) has a housing (10a) having the mounting body inside, and a first inlet into which a first gas
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containing a carbon component such as CH, gas or the like is introduced by about 9 cc And a
second inlet at a position upstream of the first gas supply pipe (10a) and into which a second gas
containing hydrogen (H.sub.2) gas is introduced by about 300 ccm. And a second gas supply pipe
(loc) having a second gas supply pipe (loc), in which a first gas and a second gas are mixed and
flow in a flow path (in particular, a portion in which the object to be The first plasma forming
portion (10d) is a main body in which the second plasma forming portion (10e) is positioned in
the flow path through which the second gas flows, and is made of quartz glass. (11) and (13) are
first and second microwave oscillators that generate microwaves of 2450 MHz, and (12) is the
body (10) of the microwaves emitted from the first microwave oscillator (11). A first waveguide
leading to the first plasma forming portion (10d) around the mounting body (3) stored in the
storage portion (10a) of the), (14) is the second microwave oscillator (13 And the second and
third microwave oscillators (11) and (13) and the second waveguide forming the second plasma
forming portion (10e) of the main body (10). The first and second waveguides (12) and (14)
constitute microwave supply means for supplying microwaves to the first and second plasma
forming portions (10d) (loe) of the main body (10). It is what you are doing. Next, the operation
of the diamond film forming apparatus comprising the microwave CVD apparatus configured as
described above will be described. First, the object to be treated (1) is placed on the mounting
body (3) in the main body (10), and the temperature of the object to be treated (1) is brought to
800 to 1000 ° C. While introducing a methane (CH4) gas, which is a first gas of about 9 cc I11,
from the first gas supply pipe (10b) into the main body (10) so that the pressure becomes 40
Torr while drawing with a vacuum pump, The hydrogen (H 2) gas of about 300 ccn + is
introduced into the main body (10) from the inlet pipe (10c) of Then, when the first and second
microwave oscillators (11) and (13) are operated, the microwaves emitted from the first and
second microwave oscillators (11) and (13) are transmitted to the first and second microwave
oscillators. Are guided to the first and second plasma forming portions (10d) and (10e) of the
main body (10) by the waveguides (12) and (14), respectively, in the second plasma forming
portion (10e) of the main body (10) The energy of the microwave brings the second gas,
hydrogen (H2) gas, into a plasma state, and a portion thereof is decomposed into hydrogen
atoms (l ()) and mixed with the first gas, which is CH4.
Then, the mixed gas is turned into a plasma state (H atom, CH, radical, etc.) by the energy of the
microwave in the first plasma forming portion (10d) in the vicinity of the object (1) of the main
body (10). Ru. The mixed gas made into a plasma state reacts and deposits on the object (1)
disposed in the atmosphere of the mixed gas (H atom, CH, radicals etc.) made into a plasma state,
and the diamond film is treated Formed on the surface of the body (1). At this time, hydrogen gas
(H2) is brought into a plasma state in the first and second plasma forming portions (10d) (IQe),
so that sufficient hydrogen atoms (H) are generated, and ■ object to be treated (1) Selective
removal of the graphite component generated above (C + 4 H-+ CH 4)), and ■ Removal of H
component in the carbon film C H + 1 (-+ C + 82) etc. The first gas CH 4 gas concentration is It is
also done at high cost. That is, the decomposition rate in hydrogen gas (H2) is higher than that of
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the conventional one shown in FIG. 2, and the action of removing non-diamond components from
the diamond film formed on the surface of the object (1) is amplified. As a result, it is possible to
use hydrogen gas (H2) effectively, and even if the concentration of methane gas (CH4) is
increased (about 3% compared to 1% shown in the drawing). However, high-purity diamond films
can be formed on the surface of the object (1) to enable high-speed film formation. [Effects of the
Invention] As described above, according to the present invention, the first gas containing the
carbon component is introduced into the main body having the storage portion for storing the
object to be treated on which the diamond film is formed. A first gas inlet and a second gas inlet
located upstream of the first gas inlet and into which a second gas containing hydrogen gas is
introduced; And the second plasma forming portion is positioned in the flow path through which
the second gas flows, and the first and second plasma formations of the main body are formed.
The microwave supplying means supplies the microwave to the second portion of the main body,
and the second gas containing hydrogen gas is supplied with the microwave. Partially in plasma
state and in the first plasma forming portion of the main body Since hydrogen is supplied to
bring the first gas and second gas containing carbon components into a plasma state, hydrogen
atoms can be sufficiently extracted, and the quality of the diamond film formed on the surface of
the object is It has an effect that the concentration of the first gas containing a carbon
component is high and the film can be formed quickly.
[0002]
Brief description of the drawings
[0003]
FIG. 1 is a block diagram showing one embodiment of the present invention, FIG. 2 is a block
diagram showing a conventional microwave CVD apparatus for forming a diamond film, and FIG.
3 is a block diagram by the apparatus shown in FIG. It is a figure which shows the Raman
spectroscopy analysis result of the diamond film formed on the conditions of% methane gas
(CH4) concentration.
In the figure, (1) is an object to be treated, (10) is a main body, (loa) is a storage section, (10b)
and (10c) are first and second introduction pipes, and (tod) and (10e) are first and second The
two plasma forming units (11) and (13) are first and second microwave oscillators. In the
drawings, the same reference numerals denote the same or corresponding parts. Figure 12 °
'[cu-')
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