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";-1 specification 1, title of the invention
Speaker diaphragm and method of manufacturing the same
3. Detailed Description of the Invention The present invention relates to a speaker diaphragm,
and in particular to improve the high frequency characteristics and transient characteristics of
the speaker by enhancing the strength and rigidity of the diaphragm. In general, it is desirable
that the diaphragm of a speaker used for high frequency range reproduction has a small mass
and a large strength and rigidity. In order to satisfy these conditions, various studies and
developments have been made, and various speaker diaphragms have been proposed. There are
conventional speaker diaphragms using an aluminum (A?) alloy plate or a titanium (Ti) plate,
but to obtain strength, the material thickness must be increased, and if the material thickness is
increased, the mass is increased. It was not possible to satisfy the above condition by enlarging it.
Therefore, even if the material thickness is reduced and the weight is reduced, satisfactory
strength can be obtained, and EndPage: 1 ": IJIJ um diaphragm has been developed, but this
diaphragm has an adverse effect on the human body at the time of manufacture and causes
pollution. There were problems in manufacturing, such as problems, and they could not be easily
manufactured. Therefore, the present invention makes it possible to easily manufacture a
diaphragm that satisfies all the conditions required for the speaker diaphragm, and the most
characteristic feature of the present invention is a method of performing chemical vapor
deposition using plasma discharge, so-called plasma chemical vapor deposition To make it
possible to easily obtain a speaker diaphragm having a high specific modulus material layer such
as boron (B) by using the method (PlasmaChemical Vapor + oDepositton), and to provide a
speaker diaphragm having excellent characteristics at low cost. It is a thing. An embodiment of
the present invention will be described below with reference to the drawings. First, FIG. 1 shows
a speaker using the speaker vibration / moving plate of this embodiment, 1 is a speaker frame, 2
is a speaker diaphragm formed in a conical shape, and roll processing is performed around this.
A magnet is formed so that the cross section is shaped like a camabo shape;) 3; a continuous
magnet, a dust cap 4 in the center, and a gasket 10. FIG. 2 shows the speaker diaphragm 2 alone,
and FIG. 3 shows a part of its cross section. In FIG. 3, reference numeral 11 denotes a diaphragm
base made of, for example, aluminum (or an alloy thereof), and reference numeral 12 denotes a
boron (B) layer uniformly formed on the surface of the base 110. Next, FIG. 4 shows a schematic
structure of a plasma chemical vapor deposition apparatus for manufacturing the abovementioned speaker diaphragm 2, 13 is a hollow reactor made of quartz, 14 is a high frequency
signal of 1 s, s 6 MHz to generate a reactor 13. A high frequency power source for plasma
generation which generates plasma in 13, a high frequency power source for heating 400 KH2
for heating the atmosphere in the reaction furnace 13, and a gas supply port and exhaust gas
16.17 provided in the reaction furnace 13. It is a mouth.
Next, 18 is a cylinder of argon (Ar) gas used as a carrier gas, and 19.20 is a boron trichloride (Bc
7i3) gas cylinder and a hydrogen (H 2) gas cylinder used as a gas for producing boron (B). A
needle valve 21 and a flow meter 22 are connected in series to these cylinders 18 to 20
respectively, and the ends of these three flow meters 22 are combined into one to supply the gas
of the reaction furnace 13. It is connected to the mouth 16. Therefore, if the needle valve 21 of
each cylinder is operated and the flow rate of the gas from each cylinder is adjusted while
looking at the flow meter 22, the gas having a desired mixing ratio can be sent to the reaction
furnace 13. . Next, 23.24 is an oil diffusion function having a function of baking out the
impurities in the reaction furnace 13 to clean the inside of the reaction furnace before generating
plasma, and an exhaust function of evacuating the inside of the reaction furnace 13 to generate
plasma 1c. The pump and oil rotary pump 26 is a motor for driving the pump. 27 is 1
'in a trap using liquid nitrogen that absorbs harmful gases contained in the exhaust gas from
reactor 13. Next, the manufacture of the speaker diaphragm will be described using such an
apparatus. The base 28 on which the speaker diaphragm base 11 made of aluminum (CA 71) is
mounted is disposed in the reaction furnace 1 described above. Next, the gas bottle supply port
16 of the reaction furnace 13 is closed by closing a valve (not shown), and the pump 23.24 is
operated to exhaust the inside of the reaction furnace 13 sufficiently. Next, the gas supply port
16 of the reaction furnace 13 is opened and the needle valve 21 is operated to operate boron
trichloride (Bcls) gas, hydrogen (H 2) gas for 1 and mixed gas of about 10 into the reaction
furnace 13 Supply. At this time, argon (Ar) gas is supplied into the reaction furnace 13 in order
to adjust the concentration of the mixed gas in the reaction furnace 13 appropriately and to
satisfy the plasma generation conditions. Next, the degree of vacuum in the reaction furnace 13
is adjusted and maintained at about 0.1 to 10 To??, and the high frequency power supply 16
for heating is operated to set the inside of the reaction furnace 13 to about SOO ░ C, and the
high frequency power supply 14 for plasma generation When it is operated and a high frequency
electric field is applied, a mixed gas of boron trichloride 1as5) and hydrogen (H2) receives the
high frequency electric field in a certain vacuum range (usually about 0.1 to 10 Torr), and is
separated into atomic ions and electrons. Plasma state. Then, the high energy atomic ions
generate boron (B) on the speaker diaphragm substrate 11. The process of forming boron (B) by
this plasma can be clearly elucidated so that it can still be expressed by a chemical formula, and
EndPage: 2 (only one brief explanation of ? 7 not present и The above-mentioned boron CB)
generates the third As shown in the figure, a uniform boron CB) layer 12 is formed on the outer
surface (only one side in the embodiment) of the speaker diaphragm substrate 11.
Unreacted gas Ba53 (boron trichloride) and reactive gas Hcl (hydrogen chloride) associated with
boron (B) adult cows are absorbed into the trap 26.27 so as not to be discharged to the
atmosphere, as they adversely affect the human body. To prevent the occurrence of As the abovementioned speaker diaphragm substrate, instead of aluminum (AA), nata y (Ti), tank / l / (Ta),
molybdenum (Mo), etc. can be used. In this case, the heating temperature is about 1 o O o C It is
appropriate. If the speaker diaphragm is to be constituted only by the boron layer 12, the
multilayer diaphragm shown in FIG. 3 and FIG. 5 (7) is chemically treated with a humic substance
(acid or alkali) such as chloride (HC1). By performing the etching process, the base 11 is
removed, and as shown in FIG. 5 (a), a loudspeaker diaphragm made of only boron CB can be
obtained. The spiro-force diaphragm having the boron (B) layer thus obtained is aluminum (Ai,
titanium (Ti)). The coefficient of elasticity E and particularly the specific modulus of elasticity E /
d'- are significantly absorbed as compared with the speaker diaphragm of beryllium (Be) and
titanium boride (TiB2) alone, which are shown in the table below. FIG. 6 is an output-sound
pressure level characteristic comparison diagram of the speaker. The characteristic of the
conventional aluminum (A7 speaker loudspeaker having a speaker diaphragm has a
characteristic that the level is significantly attenuated at 20 KHz or higher, and the high
resonance frequency fi The characteristics of the speaker with a single-force diaphragm made of
boron (B) of this example is as low as about 20 KH 2, and the characteristics of the speaker are
flat 1 as shown by curve A, and the high region resonance frequency is as high as 40 KHz. Show
flat and excellent characteristics. In the above embodiment, aluminum (AA) is used as the speaker
diaphragm substrate, but in place of this, titanium (t) y (Ti), tantalum (Ta) I tongue steer (W),
molybdenum (Mo), iron (Fe), copper (Cu), carbon (C), or quartz may be used. Further, when
removing the substrate, it may be performed by an appropriate method such as electrolytic
etching regardless of chemical etching. Furthermore, boron trichloride (B (J5) was used as a
reaction gas, but if it is a halogen compound gas of boron (B) ░, it is possible to generate boron
CB) by reaction with hydrogen (H 2) gas. In order to form titanium boride (TiB2) as a boron
compound, titanium tetrachloride (Ti (JJ4)) may be additionally used as a reaction gas. As
described above, the speaker diaphragm of the present invention and the method for producing
the same have high specific modulus material layers such as boron (B) and boron compounds
(TiB 2 etc.) by plasma-assisted deposition, and according to the present invention Since the
speaker 20 diaphragm is formed under high energy and energy, it has high strength and rigidity
due to herding, less problems such as cracks, and is excellent in high-frequency vibration
Furthermore, it is possible to select based on a specific low melting point material, perform a
large amount of physiology extremely easily, and provide a good speaker diaphragm at low cost.
And the speaker provided with such a speaker diaphragm can improve the high frequency
reproduction characteristic remarkably.
4. Brief description of the drawings FIG. 1 is a cross-sectional view of a speaker provided with a
speaker diaphragm according to an embodiment of the present invention, FIG. 2 is a perspective
view of the speaker diaphragm, and FIG. A partial sectional view, FIG. 4 is a schematic
configuration view of a plasma chemical vapor deposition apparatus for manufacturing the same
speaker diaphragm, and FIGS. 5 (7) and 5 (a) are diagrams showing a process of manufacturing
another loudspeaker diaphragm. FIG. 6 is an output sound pressure level comparison
characteristic diagram of the speaker. 11 иииииии Speaker diaphragm base, 12 иии Silicon layer. Name
of agent Attorney Nakao et al. 1 person EndPage: 3 Fig. 1 Fig. 2 Fig. 3 EndPage: ?
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