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JPS5612196

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Notice
This translation is machine-generated. It cannot be guaranteed that it is intelligible, accurate,
complete, reliable or fit for specific purposes. Critical decisions, such as commercially relevant or
financial decisions, should not be based on machine-translation output.
DESCRIPTION JPS5612196
The first step of depositing a metal on an auxiliary substrate such as a glass film or the like to
obtain a substrate having a predetermined diaphragm shape, and after this second step
Microwave plasma nitriding or carbonization or a second step of removing the auxiliary substrate
such as the plastic film or the like to obtain a substrate of only the vapor deposited metal layer; A
method of manufacturing a diaphragm for a speaker, comprising: a third step of subjecting the
nitrided layer or fc to a diaphragm having only a carbonized layer or a hatched layer by
performing a hatching treatment.
Method of manufacturing speaker diaphragm
The present invention relates to a method of manufacturing a speaker diaphragm suitable for, for
example, a dome-shaped speaker for middle to high frequency range. As is well known, what is
required as a diaphragm of a middle to high range speaker is that the mass is small and the
strength and rigidity are high. For this reason, light metals such as aluminum and titanium have
been widely used as diaphragms for speakers in the past, but recently, the ratio E /) of Young's
modulus [E) to density [p] has been further replaced instead. In some cases, it is possible to use
beryllium, form a coating layer of boron or the like, and use fc multiple or their alloys. However,
in the case of using beryllium, since it tends to give a bad shadow W to the human body in the
manufacturing process, it was necessary to strictly implement its preventive measures, which has
many problems in manufacturing. In addition, the conventional chemical vapor deposition
process which is performed to obtain a coating layer of boron or the like has a disadvantage that
it is easy to deform the diaphragm on which it is formed because it takes a long time at high
temperature. At the same time, the power efficiency and mass productivity are low and
expensive. Furthermore, in this case, since the deposition is performed, the surface is rough and
there is also a problem in appearance. EndPage: 1 Therefore, the present invention has been
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made in view of the above points, and can be efficiently processed in a short time at a low
temperature by microwave plasma nitriding, carbonization or annealing, thus causing
undesirable deformation. In addition, it is an object of the present invention to provide a
manufacturing method for a speaker diaphragm which is excellent in characteristics and low in
cost and which has an excellent appearance and a good surface appearance and a favorable
appearance. That is, a method of backing up a speaker diaphragm according to the present
invention comprises: a first step of vapor-depositing metal on an auxiliary substrate such as a
plastic film to obtain a substrate previously formed into a predetermined diaphragm shape; A
second step of later removing the auxiliary substrate such as the plastic film to obtain the
substrate of the vapor deposition metal layer only, and after the second step, micro processing in
a processing chamber which accommodates the substrate of the vapor deposition metal layer
only As shown in the figure, such as sputtering silicon or carbon or boron components in the
surface layer of the substrate by discharge plasma generated by transmitting a wave and
introducing a mixed gas of N, H, or Ar and CH 4 or Ar and BCLs, for example. And a third step of
obtaining a so-called microwave plasma nitriding or carbonizing or brazing treatment to obtain a
diaphragm of a nitrided layer or a carbonized layer or a borated layer only. Those having
features gold point.
An embodiment of the present invention will now be described in detail with reference to the
drawings. That is, FIG. 1 shows a schematic example of a dome-shaped speaker for middle and
high walls, to which the speaker diaphragm according to the present invention is applicable, in
which p is a dome-shaped diaphragm, (g) is a discoil, (S) is a suspension, a fence) is an edge
backing, a fence is a seven lunge, (T) is a yoke, and (a) is a magnet. In the dome-shaped
diaphragm (b) described above, as shown in FIG. 2, for example, a metal such as titanium foil is
vapor-deposited on an auxiliary substrate such as a plastic film in the first step in advance. After
being made into a given shape as a dome-like substrate 17 by melting away the auxiliary
substrate of the above, it becomes the processing chamber of the microwave processing system
as shown in FIG. 3 for the third step. Plural pieces are installed on the inner wall of the quartz
cylinder 16 in the container 5. That is, in FIG. 3, 1 is a microwave generation source 1), from
which a microwave having, for example, a frequency of 2450 MHz is generated, and this is
transmitted by waveguide j (JIS standard WRJ-2, 109 × 55 m). The waveguide 2 is provided with
a matching section, ie a plunger 3 and a three-stump tina 4 in order to match the transmission of
the microwaves. Also, 5 is a plasma generating chamber having a diameter larger than that of the
waveguide 2, that is, a stainless steel closed vessel (inner diameter 30 mm, length 50 cIL), a
microwave non-permeable material for preventing microwave leakage, energy injection efficiency
It is possible to prevent external influences such as external impedance change. Further, the
closed container 5 may be made of non-metal coated with a conductive film other than such
metal, or a non-metal such as nine non-metal may be provided on the outer wall. Here, the closed
vessel 5 has an exhaust port 6 and a gas introduction temperature C7, and the exhaust port 6 is
connected with an exhaust device 8 having a diffusion bond f 8 m and a rotary pump 8b cold
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trap 8C via pulp 9 among them. Be done. In addition, for example, nitrogen gas is sealed in the
gas inlet 1 through the pulp 10 and the flow meter 11/12 is connected, and hydrogen gas is
sealed in the pulp 13 through the flow meter 14, for example. The play 15 is connected. The
sealed container 5 has a microwave diameter of 1/2 or more of the length, in which the quartz
cylinder 16 (diameter 25 cm + length 3θ1) is disposed, and the cylinder 16 is an insulator on
the inner wall thereof Thus, the plurality of dome-shaped substrates 17 described above are
installed in a state of being electrically suspended with respect to the container 6.
Further, 18 is an ionization vacuum gauge for observing the degree of vacuum of the closed
vessel 5 at the time of exhaust, and 19 is a membrane pressure policy for observing the pressure
in the closed vessel 5 during processing. In addition, around the closed vessel 5, a cooling Δ eve
20 is covered, through which a cooling water is allowed to flow to cool the closed vessel 5 from
the outside. Further, the microwave transmitted through the waveguide 2 is taken out by the
copper pig made antenna 21 EndPage: 2 (outside diameter 611%, inside diameter 4 wx) inserted
in the waveguide 2 and introduced into the sealed container 5 It has become. The antenna 21 is
surrounded by a quartz cylinder 22 (20 m in thickness + 2 im in thickness) sealed on one side
through which microwaves are transmitted, and is inserted into the central portion of the sealed
container 5. The space between the quartz cylinder 22 and the closed container 5 is hermetically
sealed by an O-ring 23. In addition, a non-oxidizing gas such as an inert gas or a nitrogen gas is
totally flowed as an appropriate cooling gas 24 inside the antenna 2 so as to cool the antenna 21
and the cylinder 22 surrounding the same. -Thus, when the inside of the closed vessel 5 is
evacuated and nitrogen gas and hydrogen gas are introduced into this in a suitable mixing ratioby introducing microwave power together, plasma 25 is generated. Surface nitriding is
performed. At this time, the cylinder 16 installed at each substrate 77 ft also serves to prevent
the diffusion of the 7'2 square 25 to the wall surface of the closed container 5. The quartz
cylinder 22 also prevents the antenna 2 from being exposed to f-j) e 725. Next, the plasma
sawing process using this apparatus will be specifically described below including the procedure.
First, each base 17 is prepared, and is stored in the closed container 5 while being held on the
wall of the quartz cylinder J6 as shown in the figure. Then, the diffusion pump 8a in the exhaust
unit # 8 exhausts to about IX10-'Torr, then the pulp of the diffusion pump 8a is fully closed, the
pulp 10718 is opened, and nitrogen gas and hydrogen gas are sealed in a sealed container 5 The
pressure was about 1 r5 Torr. In this case, the mixing ratio of nitrogen gas and hydrogen gas
varies depending on the purpose of the nitriding treatment, but in this embodiment, it is 1: 1.
This mixed gas is constantly adjusted in the pulp 9 so as to be replaced by the liquid nitrogen
cooled cold trap 8c by the rotor ribbon 8b in the exhaust system 8 at a flow rate of about 20 cc /
min. On the other hand, argon gas was used as the cooling gas flowing to the copper pipe
antenna 21. In such a state, the mixed gas is discharged by the microwave power of the
frequency 2450 dish z% output 850 W from the microwave source 1 to generate the plasma 25.
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The microwave discharge plasma 25 generates active species such as nitrogen ions, nitrogenhydrogen molecular ions, and various radicals, which react with the respective substrates 17 and
spatter in their surface layers. become. After such a plasma reaction is sustained for a
predetermined time of several tens of minutes to several hours, the discharge is stopped, and
when each substrate 17 is taken out while filling the closed vessel 5 with nitrogen gas, the
surface of each substrate is extremely dense. It shows a pale gold color tone in the condition, and
a cross-sectional photograph by a metallurgical microscope revealed that a very hard nitrided
layer was formed over several layers to several hundred layers. In the plasma processing
apparatus of this embodiment, since the closed vessel 5 constitutes a large space f-lasma
generating chamber separated from the waveguide 2, first, a large-sized substrate obtained by
processing a large number of substrates simultaneously It is easy to handle. Second, even if the
discharge plasma gas pressure is changed in a wide range, the discharge can be stably
maintained. Therefore, application to various surface treatments and plasma reactions is also
possible. Because the discharge space is wide and the discharge is stable even at low pressure
(for example 10 to 10-5 Torr) due to the high frequency of the microwaves 4 and so on, the
mean free path of ions and radicals becomes large and spreads widely. Since uniform plasma can
be generated, uniform distribution processing can be easily performed. In addition, since
microwave discharge is used, matching is easy, and the electromagnetic radiation loss is
extremely small because the waveguide and the metallic antenna are used for microwave
transmission, power efficiency is good, and noise is low. It has the advantage that it can be
processed at temperatures without deformation of the substrate. Then, since the yc microphone
μ wave large power can be easily injected into the plasma, the processing speed can be
increased and processing can be performed for a short time. FIG. 4 shows the characteristics of
the case where the present invention is applied to a dome-shaped speaker having a diameter of
2511, which is the characteristics of a titanium diaphragm which has not been subjected to a
nitriding treatment of thickness 20 / Q. The characteristic is obtained by subjecting the same
vibration EndPage: 3 moving plate (corresponding to the above-mentioned base) to a nitriding
treatment to a depth of about 5 μm from the surface. That is, as apparent from this comparison,
the speaker diaphragm formed by the nitriding treatment according to the present invention can
flatten the frequency characteristics more than the one without the nitriding treatment, and can
be 20 kI (high-frequency characteristics near z It can be understood that it can be extended
more. Note that the speaker diaphragm formed by the nitriding treatment according to the
present invention is not limited to the above-described embodiment, and various modifications
and applications can be made without departing from the scope of the present invention. Nor.
For example, a stainless steel foil, an alloy foil containing aluminum other than titanium, or an
alloy foil containing iron may be used as the substrate, as long as it is a metal material that can
be nitrided. And, when stainless steel foil is used as the substrate, there is an advantage that the
nitriding treatment can be performed in a very short time so that, for example, the entire
nitriding can be completed within 30 minutes with a thickness of 0 μm. . Also, the above
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description is given taking the case of microwave plasma nitriding as an example, but the gas in
FIG. 3? If the mixed gas of Ar and CH is introduced from 12 * 15, the same carbonization
treatment can be achieved, and if the mixed gas of Ar and BCtA is similarly introduced, it is
possible to achieve the same gold processing ability, The characteristics of the diaphragm
obtained by the carbonization or brazing treatment are also equivalent to those of the nitrided
diaphragm. Therefore, as described in detail above, according to the present invention, the
microwave plasma formation or the carbonization or saponification treatment can be efficiently
processed in a short time at a low temperature, thereby avoiding the occurrence of undesirable
deformation It is possible to provide a manufacturing method that can provide a very good
loudspeaker diaphragm that is inexpensive, has excellent characteristics, has a dense surface, and
has a desirable appearance.
4. Brief description of the drawings FIG. 1 is a cross-sectional view of a dome-shaped speaker to
which the method for manufacturing a speaker diaphragm according to the present invention is
applied, and FIG. 2 shows the base shape of the speaker diaphragm used in FIG. FIG. 3 is a
perspective view showing the base EndPage of FIG.4
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