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JPS57203400

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DESCRIPTION JPS57203400
1 ? Name of invention
Microphone device
3. Detailed description of the invention The present invention provides a vibrating film 2 on one
output surface of a semiconductor laser. The present invention relates to a microphone device in
which a photodetector is disposed on the other output surface and the displacement of the
vibrating film is detected by the photodetector, and a target place thereof is vibration with
respect to a semiconductor laser. It is an object of the present invention to provide a microphone
device capable of accurately positioning the spacing and parallelism of a film. In general, a
microphone device is well known in which a vibrating film and a light detector are respectively
disposed on the Okayama power surface of a semiconductor laser to optically detect a change in
the vibrating film. FIG. 1 shows the basic configuration of a displacement gauge using a
semiconductor laser. In the figure, 1 is a semiconductor laser, 2 is a cavity of the semiconductor
laser 1, 3 is a reflecting mirror (cleaved surface) on the light output side of the semiconductor
laser 1, 3 'is a reflecting mirror on the monitor output side of the semiconductor laser 1 (cleaved
surface) , 4 is a vibrating film as a reflecting plate, and 6 is a photodetector such as a PIN diode. a
and a 'are reflected lights in the cavity 2 reflected by the reflecting mirrors 3 and 3' of the
semiconductor laser 1, b is transmitted light transmitted through the reflecting mirror 3, d is
monitor light transmitted through the reflecting mirror 3 ', C Is the anti-EndPage: 1 incident light
by the vibrating film 4. The light of the reflected light C is fed back to the laser cavity 2 and
interferes with the light in the cavity 2 to produce a light output as shown in FIG. The threshold
of the oscillation of the semiconductor laser 1 changes according to the phase of the reflected
light C, and when fed back in phase, the curve of FIG. The curve ? is in the middle state. The
phase of the reflected light C is determined by the distance between the reflection film 3 of the
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semiconductor laser 1 and the vibrating film 4. FIG. 3 shows the relationship between the
spacing and the light output. The dip point shown in FIG. 3 is represented by a half wavelength
(? / 2) of one light. Therefore, unless the vibrating membrane 4 is positioned with respect to
distance and parallelism so as to come to a position such as point A or point B, characteristics
with good linearity and wide dynamic range can not be obtained. The situation is shown in FIG.
By the way, when the vibrating film 4 is positioned, if the wavelength of the laser light is 8,000,
the positioning should be performed with an accuracy of about several tens of people. ? It can
be said that this value is impossible with machining accuracy. The present invention makes it
possible to position the vibrating film with extremely high precision with respect to distance and
parallelism, and the present invention will be described below with reference to the drawings of
the embodiments. FIG. 5 shows an embodiment of the microphone device of the present
invention. In FIG. 5, 1o is a semiconductor laser, 11 is an insulator, 12 is a back plate electrode,
12 'is a sound hole, 13 is a metal or metal 14 is a diaphragm fixed ring made of metal, 15 is an
insulating spacer, 16 is a PIN diode, 17 is a microphone cavity made of an insulator, and 18 is a
distance of the diaphragm 13 to the semiconductor laser 1o which is a shield case Positioning
regarding the degree of parallelism is performed by electrostatic force obtained by applying a
voltage between the back plate electrode 12 and the vibrating membrane 13.
b and C are laser beams. Here, as shown in FIG. 6, the back plate electrode 12 has a ring-shaped
electrode 31 at the center of the insulating plate 30 having a sound hole 12 ', and a fan-shaped
electrode divided into four equal parts around the outer periphery thereof. A semiconductor laser
1 ░ is held by an insulator 11 at the center. A large number of electrostatic capacitances 00 to
C4 are formed between the back plate electrode 12 having the electrodes 31 to 36 divided in this
manner and the vibrating film 13. In this case, the electrodes 31 to 36 are formed by performing
processing such as etching on an electrode film on which alloy deposition is performed. FIG. 7
shows a method of applying a voltage to the multi-segmented electrode of FIG. In the figure, 00
to C4 are electrostatic capacitances formed by multi-divided electrodes and a vibrating film, R0
to R4 are high resistances of several 1 ooM? to 10 oOM?, vR1 to vR2 are volumes, and E0 to
E4 are bias voltages. With such a configuration, the vibrating film 13 disposed in parallel at a
distance in advance on one output surface of the semiconductor laser 1 o is electrostatically
obtained by applying it between the vibrating film 13 and the back plate electrode 12. It acts so
as to be attracted to the back plate electrode 12, that is, the semiconductor laser 10 side. At this
time, by applying a bias voltage E0 uniquely defined between the central electrode 31 of the back
plate electrode 12 and the vibrating film 13, the electrostatic force determines the distance of the
vibrating film 13 relative to the semiconductor laser 1o. By appropriately applying a voltage
according to the volumes VR1 to vR4 during each interval, the electrostatic force determines the
parallelism of the central portion of the vibrating film 13 to the semiconductor laser 10. In this
manner, the position of the vibrating film 13 with respect to the semiconductor laser 10 is
determined with respect to distance and parallelism, and positioning with respect to the point A
or B shown in FIG. 3 can be performed with high accuracy. A wide range microphone device can
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be obtained. In addition to the application of the fixed bias voltage F 0 between the central
electrode 31 and the vibrating film 13 in consideration of the degree of tension of the vibrating
film 13, the bias voltage E. May be applied as variable. In this case, the vibrating film 13 is a
mechanical voltage supply terminal, and ol and o2 are output terminals of the PIN diode. In the
above embodiment, five divided electrodes are provided in front of or after the vibrating film
arranged in parallel at intervals on one output surface of the semiconductor laser, and the
position for the EndPage: 27 conductor laser is set between the vibrating film and the divided
electrodes. Although accurate determination is made with respect to distance and parallelism, in
addition to this, if dividing electrodes are provided before and after the vibrating film, the
processing accuracy with respect to the semiconductor laser makes the distance to the
semiconductor laser 1o exactly DA. It is not necessary to do so, and it may be arranged in
advance so that at least D> DA in consideration of the suction force by electrostatic force.
FIG. 8 shows another embodiment of the microphone device of the present invention. In FIG. 8,
2o is a semiconductor laser, 21 is a holder of the semiconductor laser 2o, 21 is a back plate, 22
'is a sound hole, 23 is a metal or metal-deposited diaphragm, 24 is a diaphragm fixing ring made
of metal, 26 is a spacer, 26 is a PIN diode, 27 is a microphone b cavity, 28 is a shield case, 29 is
an electrode, 29 'is a sound The hole 3o is an insulator. Here, as shown in FIG. 9, the electrode 29
has a circular divided electrode 41 at the center of the insulating plate 40 having a sound hole
29 'and a fan-shaped divided electrode equally divided into four around the outer periphery
thereof. 41 to 46 are included. A large number of electrostatic capacitances% to C4 are formed
between the vibrating film 23 and the electrode 29 having the divided electrodes 41 to 46
divided in this manner. In this case, the divided electrodes 41 to 45 are formed by a process such
as etching using a metal vapor deposited electrode film. The bias application method of the
circuit configuration shown in FIG. 7 is applied to these electrostatic capacitances 00 to C4.
According to this configuration, the vibrating film 23 disposed in parallel at a distance in advance
on one of the output surfaces of the semiconductor laser 2o is an electrode 29 obtained by
applying an electrostatic force between the vibrating film 23 and the electrode 29. That is, it acts
to move away from the semiconductor laser 2o. At this time, the bias voltage E0 uniquely
determined between the central divided electrode 41 of the electrode 29 and the vibrating film
23 is applied to determine the distance of the vibrating film 23 relative to the semiconductor
laser 20 by the electrostatic force. Thus, the position of the vibrating film 23 with respect to the
semiconductor laser 20 is determined with respect to distance and parallelism between each of
the divided electrodes 42 to 46 of the electrode 29 and the vibrating film 23, as shown in FIG.
Positioning can be performed with high accuracy, and a microphone device with good linearity
and wide dynamic range can be obtained. In this case, it is not necessary for the vibrating film 23
to have an accurate distance to the semiconductor laser 20 with DA due to machining accuracy,
and it is arranged in advance so that at least D <DA in consideration of suction by electrostatic
force. You should keep it. Besides the bias voltage applied between the central divided electrode
41 and the vibrating film 23 being determined as fixed in consideration of the degree to which
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the vibrating film 23 is observed, the bias voltage E0 is applied as variable. You may do it. In
FIGS. 6 and 8, GE denotes a voltage supply terminal to the diaphragm and the electrode, and a
plurality of electrode terminals are represented by one. In addition, the preliminary positioning of
the diaphragm on the semiconductor laser) is accurate, that is, if the back plate 22 shown in FIG.
8 is also used as a divided electrode of the configuration shown in FIG. The position of the
vibration film 23 with respect to the semiconductor laser 20 can be positive or negative by mere
selection of the electrodes 22 and 29. It can be moved in directions to provide accurate
positioning with respect to distance and parallelism.
In addition, even if the divided electrodes are provided on the vibrating membrane side, the same
function and effect can be obtained. As described above, according to the present invention, at
least one of the front and back of the vibrating film arranged in parallel with an interval in
advance on one output surface of the semiconductor laser is provided with an electrode facing
the vibrating film, Since the position of the vibrating film relative to the semiconductor laser is
controlled with respect to distance and parallelism by the electrostatic force obtained by
applying at least one of the electrodes as divided electrodes between the vibrating film and the
electrodes, the semiconductor laser and the vibration It has the advantage of being able to
accurately determine the distance and parallelism between the membranes to provide an
EndPage: 311 microphone device.
4. Brief description of the drawings FIG. 1 is a principle diagram of a displacement gauge using a
semiconductor laser, FIG. 2 is an output characteristic diagram of the semiconductor laser, and
FIG. 3 is a semiconductor laser Q against the change in distance between the vibrating film and
the semiconductor laser. FIG. 4 is an output characteristic diagram of the semiconductor laser
according to the vibration of the vibrating film, FIG. 6 is a sectional view showing one
embodiment of the microphone device of the present invention, and FIG. 6 is a plan view of the
back plate electrode in the same device. Fig. 7 is a circuit diagram showing an example of a
method for applying a bias to the device, Fig. 8 is a cross-sectional view showing another
embodiment of the micro-in device of the present invention, and Fig. 9 is an electrode in the
device. It is a top view. 10.20 иииииииии Semiconductor laser, 11.21 ииииииииииииииииииииииииииииииииии Back plate
electrode, 13, 23 ииииииииииииии Vibrating film, 14, 24 и и и и и и Fixed ring, 15.25 и и и и и и и Spacer, 16, 26 и и и
и и и и PIN diode, 17, 27 и и и и и и и и и и и microphone cavity, 18. 28 и и и
ииииииииииииииииииииииииииииииииииииииииииииииииииииииииииииииииииииииииииииииииииииииииииииииииииииииииииииииииииииииииииииииииииииииииииииии Split electrode. Name of
agent Attorney Nakao et al. 1 person car 1 factor 1 figure 2 main input charge tL-figure 3 D ?
figure 4 end page: 4 figure 5 figure 7 end page: ?
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