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JPS60185490

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DESCRIPTION JPS60185490
[0001]
The present invention relates to an improvement of a diaphragm for an electroacoustic
transducer and a method of manufacturing the same. Generally, in order to obtain high fidelity
reproduced sound in a speaker, it is required that the diaphragm does not divide and vibrate over
a wide frequency band as much as possible, and sustain piston vibration. Since the frequency at
which this split vibration occurs is dependent on the specific elastic modulus (E / ρ) which is the
ratio of Young's modulus (E) to density (密度) of the diaphragm material, select a material with a
large specific elastic modulus Is a factor that enhances the reproduction fidelity of the speaker.
However, the specific elastic modulus is not sufficient with natural fibers or synthetic resin fibers,
synthetic resin films, metal foils and the like that have been conventionally used as diaphragm
materials. Therefore, in recent years, various attempts have been made to increase the specific
elastic modulus by depositing a ceramic material layer on the same surface of the metal foil, or
nitriding and carbonizing the surface to deposit a high elastic modulus layer on the surface.
However, the overall specific elastic modulus of the thus surface-treated diaphragm is extremely
reduced as compared with that of the high-elastic multilayer itself of the surface. In addition, the
adhesion speed between the metal foil and the surface layer, and the rate of formation of the
surface layer in physical vapor deposition methods such as vacuum evaporation, sputtering, and
ion notating used as a layering means of the surface layer, and thermal spraying methods It can
not be said that the uniformity of the layer thickness, the layer quality, etc. is sufficiently solved.
The present invention relates to a diaphragm for an electroacoustic transducer consisting of a
silicon nitride single material or a material comprising silicon nitride as a main component and
solving the various drawbacks of the L example of the prior art, and a method of manufacturing
the same. Do. EXAMPLE 1 As shown in FIG. 1, (1) a diaphragm substrate 1 having a chromium
plated surface formed in a dovetail shape is disposed in a vacuum vessel 2 and the inside of the
vacuum vessel 2 is evacuated to 10 Torr by a vacuum pump. Exhaust to a degree. (2) The
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substrate 1 is heated to a heater 3 "rl / 100 ° C to 1500 ° C, and the temperature is
maintained. (3) Next, argon (purity 99.999%) is introduced into the vacuum vessel 2 to
completely replace the air in the vacuum vessel 2 with air. (4) On the other hand, the solution of
silicon chloride is heated to 60 ° C. by the heater 4 a in the container d to evaporate the silicon
chloride (5) Next, introduce each refuse into the vacuum vessel under the following conditions
Do. Silicon chloride: 136 cm / m + n, ammonia: 120 cm / m 1n, hydrogen: 2720 cm / m + n and
the total gas pressure is 30 Torr. (7) After the reaction atmosphere is maintained for about 3
hours, the inflow of each gas is stopped, the inside of the vacuum vessel 2 is replaced with argon,
and the substrate 1 is taken out of the vacuum vessel 2 by gradual cooling.
An evaporation layer of silicon nitride having a thickness of about 0.4 mm was formed on the
surface of the substrate by two steps. (8) Next, the substrate 1 and the vapor deposition layer
were separated by utilizing the difference between the thermal contraction rates of silicon nitride
and graphite to obtain a diaphragm made of only silicon nitride alone. Embodiment 2 FIG. 2
(However, the vacuum vessel is omitted because it is the same as FIG. 1). As shown in (1), the
dome-shaped surface is chrono, the diaphragm substrate 1 plated is placed in the vacuum vessel
2, and the inside of the vacuum vessel 2 is evacuated to about 10 Torr by a vacuum pump. (2)
The substrate 1 is heated to 1350 ° C. to 15-450 ° C. by the heater 3 and the temperature is
maintained. (3) Next, argon (purity 99.999%) is introduced into the vacuum vessel 2 and
completely replaced with the air in the vacuum vessel 2. (4) On the other hand, the solution of
silicon chlorite and titanium chloride is heated to 60 ° C. and 140 ° C. respectively by the
heaters 4a and 5a in the container 4.5, and the silicon chloride and titanium chloride are
evaporated. (5) Next, introduce each refuse into the vacuum vessel under the following
conditions. Silicon chlorite F: 136 cm / min, ammonia: 120 cm / m + n, hydrogen: 2720 cm / rrz
n, titanium chloride: 18 cm / min, total gas pressure is 30 Torr (7) After the reaction atmosphere
is maintained for about 3 hours, the inflow of each gas is stopped, and the substrate 1 is removed
from the vacuum vessel 2 by gradual cooling. According to the above-described process, a vapor
deposited layer having a thickness of about 0.4 mm and containing silicon nitride as a main
component and 6 containing titanium nitride was formed on one surface of the substrate. (8)
Next, the substrate 1 and the vapor deposition layer were separated by utilizing the difference
between the thermal contraction rates of the vapor deposition layer and the graphite to obtain a
diaphragm made of only a material containing silicon nitride as a main component and
containing titanium nitride. In FIGS. 1 and 2, 6 is a flow controller, and 7 is a mixer. The densities
of the diaphragms obtained in the above examples and the A. blow factor were measured, and
comparisons with the titanium and aluminum diaphragms of the conventional example are
shown in the following table. As is apparent from the above-mentioned eyelids, the diaphragm of
the present invention was able to raise the specific modulus by about five times as compared
with the diaphragm of the conventional example. Further, it was found from the X-ray diffraction
pattern of the diaphragm of Example 1 that the diaphragm is composed of α-type (trigonal
system) silicon nitride containing some β-type crystals. Furthermore, according to the XyA
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pattern, L and electron microscopic image analysis of the diaphragm of Example 2, the
diaphragm is 3 to 4 wt%, and the alpha b of%!
Β containing crystals! It has been found that it is composed of (quasi (hexagonal) silicon nitride
and 3 to Q, wt% titanium nitride. The diaphragm of the second embodiment is composed of even
stronger silicon nitride β crystals, and since fine titanium nitride crystals are dispersed in the
silicon nitride crystal, the A · fug ratio is improved compared to the first embodiment. It has
excellent toughness and toughness. In Example 2, when the substrate temperature is about 1150
° C. and each step is performed, an amorphous type crystal is obtained, which is heated at
14.00 ° C. in air for 6 hours to obtain α type crystal. A diaphragm made of silicon nitride and
titanium nitride was obtained. Furthermore, when the substrate temperature is about 1250 ° C.,
a diaphragm made of α-type silicon nitride and titanium nitride containing 7 to 8 wt% of β-type
crystal is obtained. The diaphragm can also achieve the object of the present invention
sufficiently. Therefore, the diaphragm according to the present invention has an extremely high
specific elastic modulus as described above, and thus the divided vibration generation frequency
is increased, and as a result, the piston vibration region is expanded. Can. Furthermore, according
to the manufacturing method of the present invention, compared to the physical vapor
deposition method of the prior art, it is possible to form a dense layer without pinholes in the
deposited layer and to form a uniform layer even on a complex shaped substrate, and the quality
is good. It is extremely suitable for mass production because it is easy to adjust the composition
of the deposited layer and the formation speed of the layer is extremely fast (several tens to
hundreds of times) compared to the physical deposition method. It is Although an example using
silicon chloride has been described in the embodiment of the present invention, it is possible to
provide a diaphragm having similar physical properties in substantially the same steps by using
silicon hydride instead. As described above, the present invention is characterized in that the
present invention is characterized in that it comprises a silicon nitride single material or a
material containing silicon nitride as a main component, and a diaphragm for an electroacoustic
transducer and a diaphragm plated with chromium. A graphite substrate is placed in a vacuum
vessel, and the substrate is maintained at 1000 ° C. to 1500 ° C. Silicon hydride or silicon
chloride or silicon hydride compounded so that the total gas pressure is 10 to 30 Torr.
Alternatively, a mixed gas of silicon chloride, a halogen compound of titanium having a vapor
pressure at normal temperature to about 150 ° C., ammonia, hydrogen, and argon is introduced
into the vacuum container to form silicon nitride on the substrate. After forming a vapor
deposition layer consisting mainly of nitride or silicon nitride, the vapor deposition layer and the
substrate are separated to obtain a diaphragm made of only the vapor deposition layer. A method
of manufacturing a diaphragm for an electroacoustic transducer, characterized in that the high
frequency reproduction limit frequency of the speaker can be increased to further improve the
fidelity, and a diaphragm of good quality can be provided relatively inexpensively. Have the effect
of being able to
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10−
[0002]
Brief description of the drawings
[0003]
1 and 2 are schematic views of a diaphragm manufacturing apparatus according to the present
invention, respectively.
Patent Applicant Onkyo Co., Ltd.-11-
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